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    CSD30N40 Data Sheet V1.2

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    Elec Thaihoa
    The CSD30N40 is an N-channel trench power MOSFET suitable for applications requiring high current handling capability such as PWM applications and load switching. It features excellent RDS(ON) of less than 5 mΩ at 10V gate voltage, high drain current rating of 86A, and lead free packaging in a TO-252 surface mount package. Key electrical characteristics including breakdown voltage, threshold voltage, output capacitance and switching performance are provided.

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    CSD30N40 Data Sheet V1.2

    Uploaded by

    Elec Thaihoa
    597 views6 pages
    The CSD30N40 is an N-channel trench power MOSFET suitable for applications requiring high current handling capability such as PWM applications and load switching. It features excellent RDS(ON) of less than 5 mΩ at 10V gate voltage, high drain current rating of 86A, and lead free packaging in a TO-252 surface mount package. Key electrical characteristics including breakdown voltage, threshold voltage, output capacitance and switching performance are provided.

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    30n40

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    CSD30N40 data sheet V1.2

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    The CSD30N40 is an N-channel trench power MOSFET suitable for applications requiring high current handling capability such as PWM applications and load switching. It features excellent RDS(ON) of less than 5 mΩ at 10V gate voltage, high drain current rating of 86A, and lead free packaging in a TO-252 surface mount package. Key electrical characteristics including breakdown voltage, threshold voltage, output capacitance and switching performance are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    597 views6 pages

    CSD30N40 Data Sheet V1.2

    Uploaded by

    Elec Thaihoa
    The CSD30N40 is an N-channel trench power MOSFET suitable for applications requiring high current handling capability such as PWM applications and load switching. It features excellent RDS(ON) of less than 5 mΩ at 10V gate voltage, high drain current rating of 86A, and lead free packaging in a TO-252 surface mount package. Key electrical characteristics including breakdown voltage, threshold voltage, output capacitance and switching performance are provided.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 6

    CSD30N40

    N-Channel Trench Power MOSFET

    General Description
    The CSD30N40 uses advanced trench technology to provide
    excellent RDS(ON), low gate charge and operation with gate
    voltages as low as 4.5V. This device is suitable for use as a
    wide variety of applications.
    Schematic Diagram

    Features
    ● VDS = 30V,ID =86A
    RDS(ON) < 5 mΩ @ VGS =10V
    RDS(ON) < 9.5mΩ @ VGS =4.5V

    ● High Power and current handing capability


    ● Lead free product is acquired
    ● Surface Mount Package
    Marking and pin Assignment
    Application
    ● PWM applications
    ● Load switch
    ● Power management

    100% UIS TESTED!


    100% ΔVds TESTED! TO-252(DPAK) top view

    Package Marking and Ordering Information


    Device Marking Device Device Package Reel Size Tape width Quantity

    CSD30N40 CSD30N40 TO-252 325mm 16mm 2500

    Table 1. Absolute Maximum Ratings (TA=25℃)


    Symbol Parameter Value Unit
    VDS Drain-Source Voltage (VGS=0V） 30 V

    VGS Gate-Source Voltage (VDS=0V) ±20 V


    (Note 1)
    Drain Current-Continuous(Tc=25℃) 86 A
    ID
    Drain Current-Continuous(Tc=100℃) 60 A
    (Note 2)
    IDM (pluse) Drain Current-Continuous@ Current-Pulsed 344 A

    Maximum Power Dissipation(Tc=25℃) 83 W


    PD
    Maximum Power Dissipation(Tc=100℃) 42 W
    (Note 3)
    EAS Avalanche energy 270 mJ

    TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 ℃

    Table 2. Thermal Characteristic


    Symbol Parameter Typ Max Unit
    RJC Thermal Resistance,Junction-to-Case - 1.8 ℃/W

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -1- http://www.casssemi.com 2019-08-26 V1.2
    CSD30N40
    Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
    Symbol Parameter Conditions Min Typ Max Unit
    On/Off States

    BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 V

    IDSS Zero Gate Voltage Drain Current VDS=30V,VGS=0V 1 μA

    IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA

    VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.5 V

    gFS Forward Transconductance VDS=5V,ID=15A 24 S

    VGS=10V, ID=20A 3.6 5 mΩ


    RDS(ON) Drain-Source On-State Resistance
    VGS=4.5V, ID=20A 6 9.5 mΩ

    Dynamic Characteristics

    Ciss Input Capacitance 1980 pF


    VDS=15V,VGS=0V,
    Coss Output Capacitance 320 pF
    f=1.0MHz
    Crss Reverse Transfer Capacitance 240 pF

    Rg Gate resistance VGS=0V, VDS=0V,f=1.0MHz 3.2 Ω

    Switching Times

    td(on) Turn-on Delay Time 12 nS

    tr Turn-on Rise Time VGS=10V, VDS=15V, 36 nS


    RL=0.75,RGEN=3
    td(off) Turn-Off Delay Time 49 nS

    tf Turn-Off Fall Time 12 nS

    Qg Total Gate Charge 45 nC

    Qgs Gate-Source Charge VGS=10V, VDS=25V, ID=14A 3 nC

    Qgd Gate-Drain Charge 15 nC

    Source-Drain Diode Characteristics

    ISD Source-Drain Current(Body Diode) 86 A

    VSD Forward on Voltage VGS=0V,IS=20A 1.2 V

    trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 15 ns

    Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 4 nC

    Notes 1.The maximum current rating is package limited.


    Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
    Notes 3.EAS condition: TJ=25℃,VDD=30V,VG=10V, RG=25Ω

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -2- http://www.casssemi.com 2019-08-26 V1.2
    CSD30N40
    Test Circuit
    1) EAS Test Circuits

    2) Gate Charge Test Circuit:

    3) Switch Time Test Circuit：

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -3- http://www.casssemi.com 2019-08-26 V1.2
    CSD30N40

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)

    Figure 1. Output Characteristics Figure 2. Transfer Characteristics


    Id (A)

    VDS Drain-to-Source Voltage(V) Id (A) VGS Gate-to-Source Voltage(V)

    Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current


    Normalized BVDSS

    Id (A)

    TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

    Figure 5. VGS(th) vs Junction Temperature Figure 6. RDS(ON) vs Junction Temperature


    Normalized Rdson
    Normalized Vth

    TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -4- http://www.casssemi.com 2019-08-26 V1.2
    CSD30N40

    Figure 7. Gate Charge Waveforms Figure 8. Capacitance

    C Capacitance(pF)
    Vgs (V)

    Qg(nC) VDS Drain-to-Source Voltage(V)

    Figure 9. Body-Diode Characteristics Id (A) Figure 10. Maximum Safe Operating Area
    Is (A)

    Vsd (V) VDS Drain-to-Source Voltage(V)

    Figure 11. Normalized Maximum Transient Thermal Impedance

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -5- http://www.casssemi.com 2019-08-26 V1.2
    CSD30N40

    TO-252 Package Information

    Zhang Jia Gang Kai Si Semiconductor Co., Ltd -6- http://www.casssemi.com 2019-08-26 V1.2

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