Noven S. Villaber September 13, 2020 BSEE 3b - E2

Noven S.
Villaber
September 13, 2020
BSEE 3b_e2
18. Describe in your own words the conditions established by forward- and reverse-bias
conditions on a p-n junction diode and how the resulting current is affected.
In the forward- bias condition, the positive terminal of the battery is connected to the p-
side and n- side is connected to the negative terminal as well. The applied forward voltage
creates an electric field that acts against the field because of the potential barrier, this is the
reason that the resultant field is weaken resulting in the decrease of the height of the barrier. The
decrease of the potential barrier allows the flow of charge carriers across the junction that leads
to the result of low resistance and thus forward current flows.
In the reverse- bias condition, the positive terminal of the battery is connected to the n-
side, and the negative terminal is connected to p- side which is very opposite in the forward-bias
condition. The applied reverse voltage makes or creates an electric field which acts in the same
direction as the field because of the potential barrier, this results in strengthens y=the resultant
field and the increase of height of the barrier. This increased potential barrier keeps away or
prevents the flow of charge carriers across the junction that leads to high resistance and thus no
current will flow.
19. Describe how you will remember the forward- and reverse-bias states of the p-n junction
diode. That is, how you will remember which potential (positive or negative) is applied to which
terminal?
I will remember the forward- bias state of the p-n junction in the simplest idea in which
the positive terminal is connected t the p-side and the negative terminal is connected to the n-
side. While in the reverse- bias state I will remember that the positive terminal is connected to
the n-side and the negative terminal is connected to the p-side.
20. Using Eq. (1.4), determine the diode current at 20°C for a silicon diode with Is 50 nA and an applied
forward bias of 0.6 V.
21. Repeat Problem 20 for T 100°C (boiling point of water). Assume that Is has increased to 5.0
µA.
22. (a) Using Eq. (1.4), determine the diode current at 20°C for a silicon diode with Is 0.1 µA at
a reverse-bias potential of -10 V.
(b) Is the result expected? Why?

Based on the calculations and observation it is expected that the result is like that since
the value is in the saturation current. Aside from that since it is reverse bias it is expected that
almost no current flowing across the junction. If we can see that the value of applied bias is
negative, the current will approach in the negative part of the saturation current.
23. (a) Plot the function y=e x for x from 0 to 5.
(5,148.4)
Plot of y=e x
(0,1)
(b) What is the value of y=e xat x = 0?
y=e x x=0
y=e0
y=1
(c) Based on the results of part (b), why is the factor -1 important in Eq. (1.4)?
In the reverse- bias state -1 is important since it shows that the applied bias is negative, it
also implies that the value is approaching negative current in the saturation current. While in the
forward- bias it doesn’t have any importance since it does not affect the current since in the
forward-bias what dominates is the exponential value. Aside from this, there is also an important
role of the -1 for example e0=1, then the equation becomes I= Is(1-1) =0, in which there should
no current flowing across since there is no applied bias.
24. In the reverse-bias region, the saturation current of a silicon diode is about 0.1 A (T 20°C).
Determine its approximate value if the temperature is increased 40°C.
In the reverse- bias region, the reverse saturation current of a silicon diode double for
every 10˚ C rise in temperature. Thus
The saturation current increase 24 = 16 times. Thus, its approximate values when the
temperature is increased is 1.6 µA.
25. Compare the characteristics of silicon and a germanium diode and determine which you
would prefer to use for most practical applications. Give some details. Refer to a manufacturer’s
listing and compare the characteristics of germanium and a silicon diode of similar maximum
ratings.
Silicon is most used in the industry. For practical uses, the semiconductor industries are
mostly silicon-based. The no.1 reason is that the energy gap between silicon which is 1.12 eV
that is much easier to fine-tune compared with the germanium which is 0.67 eV. In the
thermodynamics, the germanium heats faster which can cause the problem to the product
compared to some electronics with silicon-based in which the quality is great. The reason for this
is that the electronic components will be easier to damage if it has a small capacity of heat.
Furthermore, a silicon diode has a threshold voltage of 0.7 while germanium has 0.3 V.
The leakage current in silicon is smaller than that in germanium. Silicon is preferred to be used
because it can be used at a higher temperature and because it is cheaper. Silicon has a
temperature stability of about 200o C, while germanium has about 85oC.
26. Determine the forward voltage drop across the diode whose characteristics appear in Fig.
1.24 at temperatures of -75°C, 25°C, 100°C, and 200°C and a current of 10 mA. For each
temperature, determine the level of saturation current. Compare the extremes of each and
comment on the ratio of the two.
-75°C 25°C 100°C 200°C
Vd at 10mA 1.7 V 1.3 V 1V 0.65 V
Is 2.36 yA 6.67 mcA 1.77 nA 3.46 µA
In getting the value of voltage drop

As the temperature increases, Vd decreases while Is increases with the following ratio:
0.65V 13
=
1.7 V 24
2.36 yA 6820809
=
−6
3.46 x 10 yA 10

Noven S. Villaber September 13, 2020 BSEE 3b - E2

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(b) Is the result expected? Why?

(b) What is the value of y=e xat x = 0?

In getting the value of voltage drop

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