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Characteristics of Transistor in Common Emitter Configuration

This document describes an experiment to characterize a bipolar junction transistor (BJT) in common emitter configuration by obtaining its input and output characteristics. The apparatus includes a dual power supply, transistor, resistors, ammeters, and multimeter. The procedure involves measuring the collector current at different collector-emitter voltages while keeping base current constant to obtain output characteristics, and measuring base current at different base-emitter voltages while keeping collector-emitter voltage constant to obtain input characteristics. Parameters like current gain (hfe), output resistance (hoe), input resistance (hie), and forward current transfer ratio (hre) will be calculated from the characteristics and results reported.

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739 views14 pages

Characteristics of Transistor in Common Emitter Configuration

This document describes an experiment to characterize a bipolar junction transistor (BJT) in common emitter configuration by obtaining its input and output characteristics. The apparatus includes a dual power supply, transistor, resistors, ammeters, and multimeter. The procedure involves measuring the collector current at different collector-emitter voltages while keeping base current constant to obtain output characteristics, and measuring base current at different base-emitter voltages while keeping collector-emitter voltage constant to obtain input characteristics. Parameters like current gain (hfe), output resistance (hoe), input resistance (hie), and forward current transfer ratio (hre) will be calculated from the characteristics and results reported.

Uploaded by

kishorebab
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Characteristics of Transistor in

Common Emitter configuration


 Aim of the experiment :-
• To conduct experiment on a given BJT and obtain its (i) Input Characteristics &
(ii) Output characteristics.
• Find the h-parameters of CE configuration from the characteristics.
 Apparatus:-
S.No Apparatus/Component Range/ Quantity
Number
1 Dual DC Regulated (0-30)V 1 No
Power Supply(RPS)
2 Transistor BC107 1 No

3 Resistance 1KΩ

4 DC Ammeter (0-100) mA 1 No

(0-500) µA 1 No

5 Multimeter 1 No

6 Bread Board 1 No
 Circuit Diagram (0-500)µA
A
1 KΩ (0-500)µA IC
A BC107

IB (0-30)V V VCE
VBE
(0-30)V (0-2)V V (0-30)V
DC Supply
DC Supply

Fig.1(a)
Summary of BJT Characteristics for different configurations

Configurations

Characteristics
Common Base Common Emitter Common Collector

Input Impedance Low Medium High

Output Impedance Very High High Low

Phase Angle 0o 180o 0o

Voltage Gain High Medium Low

Current Gain Low Medium High

Power Gain Low Very High Medium


Procedure:-

 I . Output Characteristics:-
1. Connect the circuit diagram as per the Fig.1(a).
2. Keep VBB and VCC in zero volts before switching ON the supply.
3. Keep IB=100µA by varying VBB smoothly by fine control.
4. Now vary Vcc such that VCE is 0.5V and see that IB is still 100µA.
5. Note down the collector current Ic and tabulate in table-1.
6. Now vary Vcc such thet VCE =1V and note the resulting collector current Ic.
See that IB is still 100µA.
7. Now repeat the above step for VCE in steps of 0.5V upto 7.5V and note
down the resulting Ic in the tabular form.
8. Now bring back VBB and Vcc to zero.
9. Set IB = 150µA by varying VBB smoothly with fine control and repeat the
above steps (1 to 7 keeping IB = 150µA constant)
10. Repeat the step 9 with IB = 200µA.
11. Draw the graph VCE Vs Ic against IB constant and find out hfe and hoe as in
Fig1(b).
II. Input Characteristics:-
1. Keep VBB and Vcc in zero volts.
2. Set Vcc such that VCE =1.0V and keep it constant.
3. Now vary VBB smoothly such that VBE has its first value at
IB=5µA.After that vary VBE in steps of 0.02V and note down
the resulting base current IB for each step in the table-2.
Continue upto a base current of 250µA.
4. Repeat the above step for VCE = 1.5V and 2.0V respectively.
5. Draw graph VBE Vs IB against VCE constant.
6. From the graphs calculate hie and hre as in Fig 1(c).
 Tabular forms:-
 Table-1:-
Output Characteristics

IB=100µA IB=150µA IB=200µA


S.No IC
VCE (V) IC (mA) VCE (V) IC (mA) VCE (V)
(mA)
1

7
 Tabular forms:-
 Table-2:-
Input Characteristics

VCE=1.0V VCE=1.5V VCE=2.0V


S.No
VBE (V) IB (µA) VBE (V) IB (µA) VBE (V) IB (µA)
1
2
3
4

5
6

7
8
9
 Model Graph:-
Input Characteristics:-

Fig.1(b)
 Model Graph:-
 Output Characteristics:-

Fig.1(c)
 Calculations:-
1. Calculation of hfe : - At some VCE value draw a vertical line on the
output characteristics in fig.2. Find IC2, IC1, IB1 and IB2. Then

(IC2-IC1) mA
hfe = ----------------- / VCE constant
(IB1- IB2) µA

2. Calculation of hoe: - Construct a triangle around the vertical line


drawn above on any of the output characteristics as shown in the fig.2.
Find ΔVCE, ΔIC then

ΔIC
hoe = ----------- / IB constant
ΔVCE
3. Calculation of hre :-Draw a horizontal line with some IB=constant
value in fig.2. Find out from the graph VBE2, VBE1, VCE2 and VCE1.
Then

(VBE2- VBE1) V
hre = ------------------------- / IB constant
(VCE2- VCE1) V

4.Calculation of hie :- Construct a triangle around IB =constant line,


on anyone of the input characteristics. Then from the characteristics
in fig.2 find out ΔVBE and ΔIB.

ΔVBE
hie= ---------- / VCE constant
ΔIB
 Precautions:-
- Keep the VBB and VCC in zero position for each step.
- Test the continuity of the wires used before use.
- All the contacts must be very tight and no loose connections must
exist.
- All input variations must be with fine control and all readings must be
read accurately.

 Result:-
hie =
hre=
hfe=
hoe=
 Viva Questions:-

• What is a transistor & Draw the symbol of a transistor. What does the arrow
indicate?
• What is term biasing means in case of transistor?
• What are the various regions of operation of transistor & what are the regions in
which the transistor operates when it is used as a switch?
• Why CE configuration is most common?
• What is Beta?
• What happens to leakage current with temperature in a transistor (silicon)?
• Emitter resistance of a common emitter amplifier stabilizes the dc operating point
against variations in which parameter
• Why h-parameters are specified for a transistor?

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