Advanced Power

Electronics Corp. AP18T10GP-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement

D
Low Gate Charge BV DSS 100V
Fast Switching Speed R DS(ON) 160mΩ
G
RoHS-compliant, halogen-free ID 9A
S

Description D (tab)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and
cost-effectiveness.
G
D TO-220 (P)
S
The TO-220 through-hole package is widely used in commercial and industrial
applications where a small pcb footprint or an attached heatsink are required.

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID at TC=25°C Continuous Drain Current 9 A
ID at TC=100°C Continuous Drain Current 5.6 A
1
IDM Pulsed Drain Current 30 A
PD at TC=25°C Total Power Dissipation 28 W
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4.5 °C/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 °C/W

Ordering Information
AP18T10GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes, (50 pcs/tube)

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 Advanced Power
Electronics Corp. AP18T10GP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 160 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=5A - 5.6 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=80V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA
2
Qg Total Gate Charge ID=5A - 10 16 nC
Qgs Gate-Source Charge VDS=80V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.5 - nC
2
td(on) Turn-on Delay Time VDS=50V - 6.5 - ns
tr Rise Time ID=5A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 13 - ns
tf Fall Time VGS=10V - 3.4 - ns
Ciss Input Capacitance VGS=0V - 425 680 pF
Coss Output Capacitance VDS=25V - 55 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 33 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=5A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=5A, VGS=0V - 53 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 130 - nC

Notes:

1.Pulse width limited by maximum junction temperature.

2.Pulse width <300us , duty cycle <2%.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

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 Advanced Power
Electronics Corp. AP18T10GP-HF-3
Typical Electrical Characteristics
20 20

T C = 25 o C 10 V T C = 150 o C 10 V
9.0 V
16 7 .0 V 16 8.0V

ID , Drain Current (A)

ID , Drain Current (A)

7.0V

12 12

6.0 V
8 8

V G = 5.0 V
5.0 V
4 4

VG=4.5V

0 0
0 2 4 6 8 0 4 8 12 16 20

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

280 2.4

I D =5A I D =5A
T C =25 o C V G =10V
2.0
240
Normalized RDS(ON)
RDS(ON) (mΩ )

1.6

200

1.2

160

0.8

120 0.4
4 5 6 7 8 9 10 -50 0 50 100 150

V GS Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
10 3.0

8
2.6
VGS(th) (V)

6
IS(A)

T j =150 o C T j =25 o C
2.2

1.8

0 1.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T jj , Junction Temperature ( C)

o

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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 Advanced Power
Electronics Corp. AP18T10GP-HF-3
Typical Electrical Characteristics (cont.)
12 1000
f=1.0MHz

ID=5A
10 C iss
VGS , Gate to Source Voltage (V)

C (pF)
V DS = 80 V
6 100

C oss
4

C rss
2

0 10
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

G

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

Operation in this
area limited by
10 RDS(ON) 0.2
ID (A)

100us
0.1

0.1

0.05

1ms PDM
1
t
0.02
T
10ms 0.01

T c =25 C o 100ms Single Pulse Duty factor = t/T

Peak Tj = PDM x Rthjc + T C

Single Pulse DC

0.1 0.01
0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP18T10GP-HF-3
Package Dimensions: TO-220
E
E1 A
SYMBOLS Millimeters
φ MIN NOM MAX

L1 L5 A 4.40 4.60 4.80

b 0.76 0.88 1.00
c1
D 8.60 8.80 9.00
c 0.36 0.43 0.50
E 9.80 10.10 10.40
D1 L4 14.70 15.00 15.30
D L5 6.20 6.40 6.60
L4 D1 5.10 REF.
c1 1.25 1.35 1.45
b1 1.17 1.32 1.47
b1 L 13.25 13.75 14.25
e 2.54 REF.
L1 2.60 2.75 2.89
φ 3.71 3.84 3.96
L
E1 7.4 REF.

b c
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.

Marking Information

Product: AP18T10

Package code
GP = RoHS-compliant halogen-free TO-220
18T10GP

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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