TK6A65D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK6A65D
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 650 V

Gate-source voltage VGSS ±30 V
DC (Note 1) ID 6
Drain current Pulse (t = 1 ms) A
IDP 24
(Note 1)
1: Gate
Drain power dissipation (Tc = 25°C) PD 45 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 281 mJ
(Note 2) JEDEC ⎯
Avalanche current IAR 6 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
www.DataSheet.co.kr TOSHIBA 2-10U1B
Channel temperature Tch 150 °C
Weight : 1.7 g (typ.)
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Internal Connection
Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 13.8 mH, RG = 25 Ω, IAR = 6 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution. 3

1 2009-04-09

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 TK6A65D
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA

Drain cut-off current IDSS VDS = 650 V, VGS = 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 0.95 1.11 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 1.0 4.0 ⎯ S
Input capacitance Ciss ⎯ 1050 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 5 ⎯ pF

Output capacitance Coss ⎯ 100 ⎯

10 V ID = 3 A VOUT
Rise time tr VGS ⎯ 25 ⎯
0V
Turn-on time ton RL = ⎯ 60 ⎯
50 Ω
Switching time 67 Ω ns
Fall time tf ⎯ 10 ⎯
VDD ≈ 200 V

Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 75 ⎯

Total gate charge Qg ⎯ 20 ⎯

Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 6 A ⎯ 13 ⎯ nC

Gate-drain charge Qgd ⎯ 7 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C) www.DataSheet.co.kr

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 6 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A
Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 6 A, VGS = 0 V, ⎯ 1300 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC

Marking

Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

Part No. environmental matters such as the RoHS compatibility of Product.
(or abbreviation code) The RoHS is Directive 2002/95/EC of the European Parliament and
K6A65D
Lot No. of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Note 4

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 TK6A65D

ID – VDS ID – VDS
5 10
COMMON SOURCE 10 6.25 10 8 7 COMMON SOURCE
Tc = 25°C Tc = 25°C
PULSE TEST 8 PULSE TEST
(A)

(A)
4 6 8
6.75
DRAIN CURRENT ID

DRAIN CURRENT ID
3 5.75 6 6.5

6.25
2 4
6
5.5

1 2 5.5
VGS = 5 V
VGS = 5 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

10 10
VDS (V)

COMMON SOURCE COMMON SOURCE

VDS = 20 V Tc = 25℃
PULSE TEST PULSE TEST
(A)

8 8
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

6
6 6

4 www.DataSheet.co.kr
4
25 3

2 2 ID = 1.5 A
100
Tc = −55 °C

0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

100 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE COMMON SOURCE

DRAIN-SOURCE ON RESISTANCE

VDS = 10 V Tc = 25°C
PULSE TEST PULSE TEST

10
RDS (ON) (Ω)

Tc = −55 °C
⎪Yfs⎪ (S)

VGS = 10 V
25 1
100

0.1 0.1
0.1 1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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 TK6A65D

RDS (ON) – Tc IDR – VDS

3 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

VGS = 10 V Tc = 25°C

DRAIN REVERSE CURRENT

PULSE TEST PULSE TEST
2.4
RDS (ON) ( Ω)

6
1.8

IDR (A)
3
1
ID = 1.5 A
1.2 10,15

5
0.6

3 1 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 −0.3 −0.6 −0.9 −1.2 −1.5

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE
(pF)

Ciss 4
1000
C

3
Vth (V)
CAPACITANCE

Coss
100

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2

10 COMMON SOURCE
COMMON SOURCE Crss
1 VDS = 10 V
VGS = 0 V ID = 1 mA
f = 1 MHz PULSE TEST
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
50 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VDS
VGS

40 400 16
DRAIN-SOURCE VOLTAGE

200
GATE-SOURCE VOLTAGE

30 300 12
PD (W)

VDD = 100 V
400

20 200 8
COMMON SOURCE
ID = 6 A
VGS
Tc = 25°C
10 100 4
PULSE TEST

1 0 0
0 40 80 120 160 0 6 12 18 24 30

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

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 TK6A65D

rth – tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1
Duty=0.5

0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
t
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 2.78 °C/W
0.001
10μ 100μ 1m 10m 100m 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 400

ID max (pulsed) *
100 μs * 320
AVALANCHE ENERGY

10 ID max (continuous)
(A)

EAS (mJ)

1 ms * 240
ID

1
DC operation 160
DRAIN CURRENT

www.DataSheet.co.kr

Tc = 25°C

80
0.1

0
*: SINGLE NONREPETITIVE 25 50 75 100 125 150
0.01 PULSE Tc = 25°C
CURVES MUST BE DERATED CHANNEL TEMPEATURE (INITIAL)
LINEARLY WITH INCREASE Tch(°C)
IN TEMPERATURE.

0.001 BVDSS
0.1 1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 13.8 mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

5 2009-04-09

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 TK6A65D
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR

LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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