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MIT6 012F09 Topics

This document provides an overview of the topics that will be covered in the 6.012 Microelectronic Devices and Circuits course, including modeling and design of charge carriers and transport mechanisms in semiconductors, P-N junctions, bipolar transistors, MOS field effect transistors, transistor circuits, and the use of SPICE for circuit modeling. Key areas that will be examined are electron and hole behavior, doping, carrier generation and recombination, drift and diffusion, diode and transistor characteristics, amplifier design, and frequency response analysis. The document notes that the listed topic order may not reflect the actual sequence in class.

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Karthik Sachidananda
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52 views2 pages

MIT6 012F09 Topics

This document provides an overview of the topics that will be covered in the 6.012 Microelectronic Devices and Circuits course, including modeling and design of charge carriers and transport mechanisms in semiconductors, P-N junctions, bipolar transistors, MOS field effect transistors, transistor circuits, and the use of SPICE for circuit modeling. Key areas that will be examined are electron and hole behavior, doping, carrier generation and recombination, drift and diffusion, diode and transistor characteristics, amplifier design, and frequency response analysis. The document notes that the listed topic order may not reflect the actual sequence in class.

Uploaded by

Karthik Sachidananda
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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6.

012 - Microelectronic Devices and Circuits

GENERAL THEME: Modeling/Design

TOPICS:
Charge Carriers and Transport
Electrons and holes in semiconductors; generation and recombination; intrinsic
conductivity. Doping; detailed balance and mass action; extrinsic carrier
concentration; p- and n-type semiconductors. Excess carriers; recombination; low
level injection and minority carrier lifetime. Drift; mobility and conductivity;
photoconductivity. Diffusion; the Einstein relation, quasi-neutrality, and dielectric
relaxation; role of minority carriers.
P-N Junctions
Space charge in inhomogeneously doped semiconductor. Poisson-Boltzmann
equation; Debye length. Depletion approximation. Boundary conditions at edge of
space charge layer. Diode i-v characteristics. Depletion and diffusion capacitances.
Incremental equivalent circuit. Light emitting diodes. Optical injection of carriers;
photodiodes; solar cells.
Bipolar Transistors
Derivation of large signal forward active region model; base width modulation.
Hybrid-π incremental model including Early effect and capacitive elements; intrinsic
high frequency limitations of BJTs.
MOS Field Effect Transistors
MOS capacitor: accumulation, depletion, inversion, strong inversion with depletion
approximation; factors that control threshold voltage. MOS transistors: gradual
channel approximation; i-v characteristics in strong inversion; channel length
modulation; velocity saturation. Incremental model including Early effect, back gate
effect, and capacitive elements; intrinsic high frequency limitations of MOSFETs.
Sub-threshold physics; drain current; LEC; comparison to BJT.
Transistor Circuits
Digital building-block circuits; MOS and bipolar inverter technologies; CMOS;
memory cells. Switching transients and gate delays.
Various single stage MOSFET and BJT amplifier configurations; resistor and current
source biasing. Current source design. Resistive, current source, and active loads.
Multistage amplifiers; differential pairs; direct-coupled stages. Frequency response;
Miller effect; methods of open circuit and short circuit time constants. Subthreshold
amplifier design and applications.
Use of SPICE as a circuit modeling tool.

NOTE: The order in which topics are presented above does not necessarily represent
the order in which they will be discussed in class.

C. G. Fonstad
Sept 2009
MIT OpenCourseWare
http://ocw.mit.edu

6.012 Microelectronic Devices and Circuits


Fall 2009

For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms.

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