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Homework #3 (Diodes and BJTS) : Microelectronics

This document contains the questions for Homework #3 on diodes and BJTs for the Microelectronics course offered in the Department of Electrical Engineering at National Taiwan University of Science and Technology during the 2017 Fall Semester. There are 6 questions related to analyzing circuits that contain diodes, BJTs, calculating output resistances and Early voltages, and determining voltages/currents/beta values based on given circuit conditions.

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141 views1 page

Homework #3 (Diodes and BJTS) : Microelectronics

This document contains the questions for Homework #3 on diodes and BJTs for the Microelectronics course offered in the Department of Electrical Engineering at National Taiwan University of Science and Technology during the 2017 Fall Semester. There are 6 questions related to analyzing circuits that contain diodes, BJTs, calculating output resistances and Early voltages, and determining voltages/currents/beta values based on given circuit conditions.

Uploaded by

Fuc Fuc Lei
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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National Taiwan University of Science and Technology

Department of Electrical Engineering


2017 Fall Semester
Microelectronics
Homework #3 (Diodes and BJTs)
Deadline: 2017/12/04 in class

1. The circuit in Fig. 1 implements a complementary-output rectifier. Sketch and clearly label the
waveforms of vO+ and vO-. Assume a 0.7-V drop across each conducting diode. If the magnitude
of the average of each output is to be 12 V, find the required amplitude of the sine wave across
the entire secondary winding. What is the PIV of each diode?

2. Sketch and clearly label the transfer characteristic of the circuit in Fig.2 for -15V < vI < +15 V.
Assume that the diodes can be represented by the constant-voltage-drop model with VD = 0.7 V.
Also assume that the zener voltage is 6.8 V and that rz is negligibly small.

Fig.1 Fig.2

3. Two transistors have EBJ areas as follows: AE1 =200 m x 200 m and AE2 = 0.4 m x 0.4 m.
If the two transistors are operated in the active mode and conduct equal collector currents, what
do you expect the difference in their VBE values to be?

4. For a particular npn transistor operating at a VBE of 680 mV and IC = 1 mA, the iC-vCE characteristic
has a slope of 0.8 x 10-5 siemens. To what value of output resistance does this correspond? What
is the value of the Early voltage for this transistor? For operation at 10 mA, what would the output
resistance become?

5. A single measurement indicates the emitter voltage of the transistor in the circuit shown in Fig. 3
to be 1.0 V. Under the assumption that | VBE | = 0.7 V, what are VB, IB, IE, IC, VC, , and  ?

6. All the transistors in the circuits of Fig. 4 are specified to have a minimum  of 50. Find
approximate values for the collector voltages and calculate forced  for each of the transistors.

Fig. 3 Fig. 4

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