MDF13N50 N-channel MOSFET 500V

MDF13N50
N-Channel MOSFET 500V, 13.0 A, 0.5Ω

General Description Features

The MDF13N50 uses advanced MagnaChip’s MOSFET
VDS = 500V
Technology, which provides low on-state resistance, high
VDS = 550V @ Tjmax
switching performance and excellent quality.
ID = 13.0A @ VGS = 10V

RDS(ON) ≤ 0.5Ω @ VGS = 10V
MDF13N50 is suitable device for SMPS, high Speed
switching and general purpose applications. Applications

Power Supply

HID

Lighting

G
D
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 500 V
Drain-Source Voltage @ Tjmax VDSS @ Tjmax 550 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 13 A
Continuous Drain Current (※) o
ID
TC=100 C 8.2 A
Pulsed Drain Current(1) IDM 52 A
TC=25oC 41 W
Power Dissipation PD
Derate above 25 oC 0.33 W/ oC

Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns

Single Pulse Avalanche Energy(4) EAS 580 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
C/W
(1)
Thermal Resistance, Junction-to-Case RθJC 3.05

Nov2009. Version 1.2 1 MagnaChip Semiconductor Ltd.

 MDF13N50 N-channel MOSFET 500V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDF13N50TH -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 6.5A 0.39 0.5 Ω
Forward Transconductance gfs VDS = 40V, ID = 6.5A - 13 - S
Dynamic Characteristics
Total Gate Charge Qg - 33 -
Gate-Source Charge Qgs VDS = 400V, ID = 13A, VGS = 10V(3) - 10.4 - nC
Gate-Drain Charge Qgd - 13 -
Input Capacitance Ciss - 1390
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 6.3 pF
Output Capacitance Coss - 173
Turn-On Delay Time td(on) - 30.2
Rise Time tr VGS = 10V, VDS = 250V, ID = 13A, - 52.8
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 60.8
Fall Time tf - 33.8
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 13 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 13A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 325 ns
Time
IF = 13A, dl/dt = 100A/µs(3)
Body Diode Reverse Recovery
Qrr - 2.9 µC
Charge

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=6.2mH, IAS=13.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Nov2009. Version 1.2 2 MagnaChip Semiconductor Ltd.

 MDF13N50 N-channel MOSFET 500V
30 0.9

Vgs=5.5V
=6.0V
25 0.8
=6.5V
=7.0V
=8.0V
ID,Drain Current [A]

20 =10.0V
0.7

RDS(ON) [Ω ]
15
0.6
VGS=10.0V
VGS=20V
10 Notes
1. 250㎲ Pulse Test 0.5
2. TC=25℃
5
0.4

5 10 15 20 5 10 15 20 25 30 35

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

1.8 1.2

※ Notes : Drain-Source Breakdown Voltage ※ Notes :

1. VGS = 10 V 1. VGS = 0 V
1.6 2. ID = 5 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

1.4

VGS=10V
1.2 1.0

VGS=4.5V

1.0
0.9

0.8

0.6 0.8
-50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200

o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

100

※ Notes :
* Notes ; 1. VGS = 0 V
1. VDS=30V 2. ID = 250㎂
Reverse Drain Current [A]

150℃
10
10
IDR
ID [A]

25℃
1
150℃
25℃

-55℃

0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
4 5 6 7 8 VSD, Source-Drain Voltage [V]

VGS [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Nov2009. Version 1.2 3 MagnaChip Semiconductor Ltd.

 MDF13N50 N-channel MOSFET 500V
3000
Ciss = Cgs + Cgd (Cds = shorted)
2800 Coss
10 ※ Note : ID = 13.0A Coss = Cds + Cgd
100V
250V 2600 Crss = Cgd
400V
2400
VGS, Gate-Source Voltage [V]

8
2200
2000 Ciss

Capacitance [pF]
6 1800
1600
1400
4
1200
※ Notes ;
1000
1. VGS = 0 V
2 800 2. f = 1 MHz
Crss
600
400
0
200
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 0.1 1 10
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2 14
10

10 µs
Operation in This Area 12
is Limited by R DS(on)
100 µs
10
1 1 ms 10
ID, Drain Current [A]
ID, Drain Current [A]

10 ms

100 ms 8
DC
0
10
6

4
-1
10
Single Pulse 2
TJ=Max rated
TC=25℃

-2
0
10 25 50 75 100 125 150
-1 0 1 2
10 10 10 10
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

14000

0 single Pulse
10 12000 RthJC = 3.0℃/W
Normalized Thermal Response

D=0.5 TC = 25℃
10000

0.2
Power (W)

8000
Zθ JC(t),

-1 0.1
10
6000
0.05

0.02 ※ Notes : 4000

Duty Factor, D=t1/t2
0.01 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.0℃/W 2000
single pulse
-2
10
-5 -4 -3 -2 -1 0 1 0
10 10 10 10 10 10 10
1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec]
Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Nov2009. Version 1.2 4 MagnaChip Semiconductor Ltd.

 MDF13N50 N-channel MOSFET 500V
Physical Dimensions

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

S y mbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
￠R 3.00 3.55

Nov2009. Version 1.2 5 MagnaChip Semiconductor Ltd.

 MDF13N50 N-channel MOSFET 500V
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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Nov2009. Version 1.2 6 MagnaChip Semiconductor Ltd.