DISCRETE SEMICONDUCTORS

DATA SHEET
handbook, 2 columns

M3D116

BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification 1997 Nov 24
Supersedes data of 1996 Oct 02
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

FEATURES DESCRIPTION This package is hermetically sealed

and fatigue free as coefficients of
• Glass passivated Rugged glass SOD57 package, using


expansion of all used parts are
• High maximum operating a high temperature alloyed
matched.
temperature construction.
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy 2/3 page k(Datasheet) a

absorption capability
MAM047
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V
VR continuous reverse voltage
BYV27-50 − 50 V
BYV27-100 − 100 V
BYV27-150 − 150 V
BYV27-200 − 200 V
BYV27-300 − 300 V
BYV27-400 − 400 V
BYV27-500 − 500 V
BYV27-600 − 600 V
IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm;
BYV27-50 to 200 see Figs 2, 3 and 4; − 2.0 A
averaged over any 20 ms period;
BYV27-300 and 400 − 1.9 A
see also Figs 14, 15 and 16
BYV27-500 and 600 − 1.6 A
IF(AV) average forward current Tamb = 60 °C; printed-circuit board
BYV27-50 to 200 mounting (see Fig. 25); − 1.30 A
see Figs 5, 6 and 7;
BYV27-300 and 400 − 1.25 A
averaged over any 20 ms period;
BYV27-500 and 600 see also Figs 14, 15 and 16 − 1.10 A

1997 Nov 24 2
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFRM repetitive peak forward current Ttp = 85 °C; see Figs 8, 9 and 10
BYV27-50 to 400 − 20 A
BYV27-500 and 600 − 16 A
IFRM repetitive peak forward current Tamb = 60 °C;
BYV27-50 to 200 see Figs 11, 12 and 13 − 14 A
BYV27-300 and 400 − 13 A
BYV27-500 and 600 − 11 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave;
BYV27-50 to 400 Tj = Tj max prior to surge; − 50 A
VR = VRRMmax
BYV27-500 and 600 − 40 A
ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to − 20 mJ
avalanche energy surge; inductive load switched off
Tstg storage temperature −65 +175 °C
Tj junction temperature see Fig. 17 −65 +175 °C

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VF forward voltage IF = 2 A; Tj = Tj max;
BYV27-50 to 200 see Figs 18, 19 and 20 − − 0.78 V
BYV27-300 and 400 − − 0.82 V
BYV27-500 and 600 − − 1.00 V
VF forward voltage IF = 2 A;
BYV27-50 to 200 see Figs 18, 19 and 20 − − 0.98 V
BYV27-300 and 400 − − 1.05 V
BYV27-500 and 600 − − 1.25 V
V(BR)R reverse avalanche breakdown IR = 0.1 mA
voltage
BYV27-50 55 − − V
BYV27-100 110 − − V
BYV27-150 165 − − V
BYV27-200 220 − − V
BYV27-300 330 − − V
BYV27-400 440 − − V
BYV27-500 560 − − V
BYV27-600 675 − − V
IR reverse current VR = VRRMmax; − − 5 µA
see Fig. 21
VR = VRRMmax; − − 150 µA
Tj = 165 °C; see Fig. 21

1997 Nov 24 3
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

trr reverse recovery time when switched from
BYV27-50 to 200 IF = 0.5 A to IR = 1 A; − − 25 ns
measured at IR = 0.25 A;
BYV27-300 to 600 − − 50 ns
see Fig. 27
Cd diode capacitance f = 1 MHz; VR = 0;
BYV27-50 to 200 see Figs 22, 23 and 24 − 100 − pF
BYV27-300 and 400 − 80 − pF
BYV27-500 and 600 − 65 − pF
dI R maximum slope of reverse recovery when switched from − − 4 A/µs
--------
dt current IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig. 26

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W

Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the “General Part of associated Handbook”.

1997 Nov 24 4
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

GRAPHICAL DATA

MGA849 MLC293
2.0 2.0
handbook, halfpage
handbook, halfpage
I F(AV) I F(AV)
(A) 20 15 10 lead length (mm) (A) lead length 10 mm
1.6 1.6

1.2 1.2

0.8 0.8

0.4 0.4

0 0
0 100 200 0 100 200
Ttp (o C) Ttp (o C)

BYV27-50 to 200 BYV27-300 and 400

a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application. Switched mode application.

Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward
current as a function of tie-point temperature current as a function of tie-point temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).

MGK648 MGA848
3 2.0
handbook, halfpage handbook, halfpage
IF(AV) I F(AV)
(A) (A)
1.6
lead length 10 mm
2
1.2

0.8
1

0.4

0 0
0 100 200 0 100 200
Ttp (°C) T amb ( o C)

BYV27-500 and 600 BYV27-50 to 200

a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application. Device mounted as shown in Fig. 25.
Switched mode application.

Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward
current as a function of tie-point temperature current as a function of ambient temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).

1997 Nov 24 5
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MLC294 MGK649
1.6 1.6
handbook, halfpage handbook, halfpage
I F(AV) IF(AV)
(A) (A)

1.2 1.2

0.8 0.8

0.4 0.4

0 0
0 100 200 0 100 200
Tamb ( o C) Tamb (°C)

BYV27-300 and 400 BYV27-500 and 600

a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25. Device mounted as shown in Fig. 25.
Switched mode application. Switched mode application.

Fig.6 Maximum permissible average forward Fig.7 Maximum permissible average forward
current as a function of ambient temperature current as a function of ambient temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).

MLC297
20
handbook, full pagewidth
I FRM δ = 0.05
(A)
16

0.1
12

8 0.2

0.5
4

0
10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4

BYV27-50 to 200
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 6
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MLC299
20
handbook, full pagewidth
I FRM δ = 0.05
(A)
16

12 0.1

8 0.2

4 0.5

0
10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4

BYV27-300 and 400

Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MGK650
20
handbook, full pagewidth
IFRM
(A)

16
δ = 0.05

12

0.1

8
0.2

4 0.5
1

0
10−2 10−1 1 10 102 103 tp (ms) 104

BYV27-500 and 600

Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.

Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 7
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MLC298
16
handbook, full pagewidth

I FRM
(A)
δ = 0.05
12

0.1
8

0.2

4
0.5

1
0
10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4

BYV27-50 to 200
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.

Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MLC300
16
handbook, full pagewidth

I FRM
(A)

δ = 0.05
12

8 0.1

0.2

4
0.5

0
10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4

BYV27-300 and 400

Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.

Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1997 Nov 24 8
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MGK651
20
handbook, full pagewidth
IFRM
(A)

16

12

δ = 0.05

8
0.1

4 0.2

0.5
1

0
10−2 10−1 1 10 102 103 tp (ms) 104

BYV27-500 and 600

Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.

Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

MGA870 MLC292
2.4 2.4
handbook, halfpage handbook, halfpage
P a=3 2.5 2 P
(W) 1.57 (W) a=3 2.5 2 1.57
2.0 2.0
1.42

1.6 1.6
1.42

1.2 1.2

0.8 0.8

0.4 0.4

0 0
0 1 I F(AV) (A) 2 0 1 I F(AV) (A) 2

BYV27-50 to 200 BYV27-300 and 400

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Fig.14 Maximum steady state power dissipation Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses, (forward plus leakage current losses,
excluding switching losses) as a function excluding switching losses) as a function
of average forward current. of average forward current.

1997 Nov 24 9
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MGK652 MGK645
2.0 200
handbook, halfpage a=3 2 handbook, halfpage
P
(W) 2.5 Tj
1.57 (°C)
1.6
1.42

1.2

100

0.8

0.4

0 0
0 1 IF(AV)(A) 2 0 50 VR (%VRmax) 100

BYV27-500 and 600

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR.
Dotted line = VRRM; δ = 0.5.

Fig.16 Maximum steady state power dissipation

(forward plus leakage current losses, Fig.17 Maximum permissible junction
excluding switching losses) as a function temperature as a function of maximum
of average forward current. reverse voltage percentage.

MGA864 MLC291
6 6
handbook, halfpage handbook, halfpage

IF IF
(A) (A)

4 4

2 2

0 0
0 1 V F (V) 2 0 1 V (V) 2
F

BYV27-50 to 200 BYV27-300 and 400

Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C. Solid line: Tj = 25 °C.

Fig.18 Forward current as a function of forward Fig.19 Forward current as a function of forward
voltage; maximum values. voltage; maximum values.

1997 Nov 24 10
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MBH649 MGC550
6 103
handbook, halfpage handbook, halfpage

IF IR
(A) (µA)

4 102

2 10

0 1
0 1 V F (V) 2 0 100 200
Tj (°C)

BYV27-500 and 600

Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C. VR = VRRMmax.

Fig.20 Forward current as a function of forward Fig.21 Reverse current as a function of junction
voltage; maximum values. temperature; maximum values.

MLC295 MLC296
102
handbook, halfpage
2
10halfpage
handbook,

Cd Cd
(pF) (pF)

10 10

1 1
1 10 102 V R (V) 103 1 10 102 103
V R (V)

BYV27-50 to 200 BYV27-300 and 400

f = 1 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C.

Fig.22 Diode capacitance as a function of reverse Fig.23 Diode capacitance as a function of reverse
voltage; typical values. voltage; typical values.

1997 Nov 24 11
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

MGK653
102
handbook, halfpage 50
handbook, halfpage
25
Cd
(pF)

7
50
10

3
1
1 10 102 VR (V) 103 MGA200

BYV27-500 and 600

f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage; typical values. Fig.25 Device mounted on a printed-circuit board.

IF halfpage
ndbook,

dI F
dt

t rr

10% t
dI R
dt
100%
IR
MGC499

Fig.26 Reverse recovery definitions.

1997 Nov 24 12
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

handbook, full pagewidth IF

DUT
(A)
+ 0.5
t rr
10 Ω 25 V

1Ω
50 Ω 0
t
0.25

0.5
IR
(A)
MAM057
1.0

Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.

Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.27 Test circuit and reverse recovery time waveform and definition.

1997 Nov 24 13
 

Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

PACKAGE OUTLINE

Hermetically sealed glass package; axial leaded; 2 leads SOD57

(1)
k a
b

D L G L

DIMENSIONS (mm are the original dimensions)

0 2.5 5 mm
b D G L
UNIT
max. max. max. min. scale

mm 0.81 3.81 4.57 28

Note
1. The marking band indicates the cathode.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOD57 97-10-14

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Nov 24 14
Philips Semiconductors Product specification

Ultra fast low-loss

BYV27 series
controlled avalanche rectifiers

NOTES

1997 Nov 24 15
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© Philips Electronics N.V. 1997 SCA56

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Printed in The Netherlands 117027/1200/04/pp16 Date of release: 1997 Nov 24 Document order number: 9397 750 02663