See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/325562768

The Design and EM-Simulation of Square Spiral Inductor Using Simple

Equations

Article  in  Materials today: proceedings · January 2018

DOI: 10.1016/j.matpr.2018.05.074

CITATIONS READS
0 301

3 authors:

Beere Sha R S Am Khan

Mangalore university Mangalore university
8 PUBLICATIONS   3 CITATIONS    25 PUBLICATIONS   122 CITATIONS   

SEE PROFILE SEE PROFILE

Manjunatha Reddy
ICON Design Automation
8 PUBLICATIONS   3 CITATIONS   

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

Parallel Computing View project

Development of Soft computing techniques in identification of non-selective sensors View project

All content following this page was uploaded by Beere Sha R S on 07 July 2018.

The user has requested enhancement of the downloaded file.

 Available online at www.sciencedirect.com

ScienceDirect
Materials Today: Proceedings 5 (2018) 10875–10882 www.materialstoday.com/proceedings

ILAFM2016

The Design and EM-Simulation of Square Spiral Inductor Using Simple

Equations
Beeresha R Sa, A M Khanb, Manjunatha Reddy H Vc *
a
Research Scholar, Department of Electronics, Mangalore University, Karnataka, India, [email protected]
b
Professor, Department of Electronics, Mangalore University, Karnataka, India, [email protected]
c
Senior IEEE Member, M.Tech, RV College of Engineering, Bangalore, Karnataka India, [email protected]

Abstract

The RF/Microwave circuits are very much essential in communication and broadcasting fields. The important requirement of
such a circuit is to be miniaturized and integrate planar passive components. The design of passive on chip capacitor and inductor
are key components for RFIC/MMIC design technique such as filters and oscillators. In this work consider RT/Duriod substrate
material and planar microstrip line to design square spiral inductor. In this paper we propose design of square spiral inductor
using simple equations and compare the calculated results with obtained EM simulated results. The verification is done by
varying the conductor width (W), space between the conductor (S), number of turns (N) and inner diameter (din) of the square
spiral inductor structure. The observed electromagnetic simulated results gives better agreement with standard simple equations
like modified wheeler (MW), current sheet Approximation (CSA) and data fitted monomial equation (DFME) at 600MHZ
operating frequency. The design and simulation is carried out using NI/AWR microwave office tool.

© 2017 Elsevier Ltd. All rights reserved.

Selection and/or Peer-review under responsibility of Second International Conference on Large Area Flexible
Microelectronics (ILAFM 2016): Wearable Electronics, December 20th–22nd, 2016.

Keywords: Quality Factor, MIC, Microstrip Line, Spiral Inductor, Radio Frequency;

* Corresponding author.
E-mail address: [email protected]

2214-7853 © 2017 Elsevier Ltd. All rights reserved.

Selection and/or Peer-review under responsibility of Second International Conference on Large Area Flexible Microelectronics (ILAFM 2016):
Wearable Electronics, December 20th–22nd, 2016.
10876 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882

1. Introduction

The modern wireless communication system is focused on low cost, small size and higher efficiency circuits
design. The circuit need considerable amount of passive (inductor and capacitor) components for designing a power
amplifiers, oscillators, microwave switches, combiners, and splitters circuits, etc. The one of the cell phone
company gives requirement of passive components in cell phone chip is 95% of the total components, 80% of the
chip area and 70% of the chip assembly cost [1]. The one of the (Ericsson) cell phone company is resulting in a
passive to active ratio of 21:1 [2].

They have been numerous publications for design and calculations of passive spiral inductor in RF/microwave
applications [3-7]. The calculation of inductance of spiral inductor is a trendy research topic to design of basic
passive component for high frequency applications. The many researchers have been focused on design and
modelling of higher accuracy and better quality factor spiral inductor design for RF/microwave applications [8]. In
radio frequency integrated circuits (RFIC) the spiral inductors dominates overall circuit performance and it is
frequently used passive component in modern RFIC’s design technology [9-11].

The spiral inductor is a basic component and play a vital role in designing RF matching networks voltage
controlled oscillators, filters, mixtures and many more RF circuits [12]. The passive devices are chosen depending
on the specifications pertaining to the area applications and the technology adopted for implementation of higher
efficiency. The MIC (Multilayer Integrated circuits) is one of the moderate technique is preferred for higher
efficiency and low power consumption for designing square spiral inductors. The MIC technique provides the
various manufacturer flexibilities like compactness, low cost and high volume modules for wide range of
RF/Microwave applications [13]. This technique allows the design of highly integrated 3D modules with greater
flexibility for the designer [14].

The passive spiral inductor can be realized in different structure like straight narrow racks, single loop multi
turn. The multi-turn inductors are used for higher inductance value design, in that circular and square structures are
most popular. The square spiral inductor structure has less complex for analytical design and easy to fabricate than
circular inductor structure [15]. The square spiral inductor is widely used than circular spiral inductor.

The inductance of a spiral inductor is directly proportional to the physical parameters like N, S, din and W. The
magnitude of the inductance increases with decrease in quality factor. The quality factor is inversely proportional to
reactive inductance of the spiral inductor. The increase in reactance affect to increases dissipation of energy instead
of utilization. We have design a spiral inductors using quasi lumped mircostrip line because of less complexity in
design and fabrication.
The design of spiral inductor is done by using RT/Duriod substrate material with smaller dielectric constant
(3.66), loss tangent (0.0013), height of substrate is 0.508mm and copper conductor with 0.032mm thickness [16]. In
this paper propose a design of square spiral inductor using MW, CSA and ME theoretical formulas. The calculated
result is compare with EM simulated results using AWR/NI tool. The observed simulated results are better
agreement with simple equations.

The paper is organized as follows; Section 2 presents the basic of spiral inductor structure and equivalent circuit.
In section 3 analytical realization of spiral inductor using RT/Duriod, is briefly discussed. In section 4, design and
EM simulation of spiral inductors in different turns, conductor width (W), space between the conductor (S) and
inner diameter (Din) is discussed. In section 5 results and discussions using graph we explained and section 6, we
summarize the obtained results.

2. Basics of spiral inductor

The proper design of a passive inductor is playing a major role to increase RF/Microwave circuit efficiency. The
design of inductor depends on self-inductance and mutual inductance. The empirical formula gives for value of
inductance that is of the same order of magnitude of the real inductance [17]. The planar inductor can be design
 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882 10877

using formulas are derived mainly from the maxwell and grovier equations [18-19]. The greenhouse equations are
derived with the help of groovier formulas and other simple accurate equations like modified wheelers, currant sheet
approximation and monomial expression [21-22].

The characteristics of spiral inductors are having three important figure of merit like inductance, quality factor
and self-inductance (SRF) [22]. The quality factor can be defined as XL/RS (XL =L), for the perfect inductor the
series resistance is nearly equal to zero then quality factor will be infinity. But in practical circuits the series
resistance affect to decrease the quality factor and increases the dissipation factor in designed. The series resistance
depends on physical parameters of the spiral inductors. The physically designed parameters like width of the
conductor (W), space between turns (S), number of turns (n), outer diameter (Dout) and inner diameter (Din) as
shown in figure 1. The changes of physical parameters will determine inductance value and quality factor (QF) with
respect to operating frequency. All these physical parameters are calculated and designed using basic simple
equations with 600MHZ operating frequency [23- 24].

The spiral inductor equivalent circuit (Figure 2) is proposed by Yue and Wrong. The frequency dependency of
spiral metal coils is having series inductance and resistance are represented by parallel Rs and Ls of the circuit. The
Cs is the series capacitance of the conductor and Cox is present in space between parallel conductors. The Rsi and Csi
represent the DC resistance of the metal line [25]. To facilitate the design of such components, significant work has
gone into modelling spiral inductors using lumped circuit models [26]. The parasitic resistors and capacitors in this
model have simple physically intuitive expressions, but the inductance value lacks a simple but accurate expression.

Fig.1. Geometry of the Square Spiral Inductor Structure; Fig.2. Equivalent Circuit of Spiral Inductor,

3. Analytical design of spiral inductor

The analytical optimization of a spiral inductor using simple equations is performed and the effect of design
parameters of inductance and quality factors are calculated. It should be noted that optimization is based on
changing any one of physical parameters and other parameters are constants. In this paper we consider spiral
inductor turns, space between the conductor, conductor width and inner diameter or radius of a square spiral
inductor. The desired inductance value of a square spiral inductor is achieved by consider a physical parameters at
600MHZ. The calculation of varying parameters is done by using existing simple questions like MW, CSA and ME
[21].

3.1. MW (modified wheeler) formula

The wheeler presented a several formulas for planar spiral inductors to calculate inductance in circular structure
or in square structure [27].The modified wheeler formula has found a simple modification of the original wheeler
formula allows us to obtain an expression that is valid for planar symmetrical spiral inductors structure.

n 2 davg
LMW  K1µ0 (1)
1 k 2
10878 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882

Where ρ is the fill ratio (ρ = (dout-din)/(dout+din)), K1and K2 are integral constants and are layout dependent variables
[21]. The davg is an average diameter of a square spiral inductor (davg = 0.5(dout+din) ). The smaller value of ρ then
dout is nearly equal to din. The increase in fill ratio then dout is greater than din. The two inductors of same size bur
different fill ratio will gives different inductance value.

3.2. CSA (Current Sheet Approximation) formula

The CSA is a simple expression to find magnitude of the inductance by approximating spiral inductor sides [28].
In square spiral inductor structure has four identical sheets (conductor). The sheets are opposite to one another
where adjacent one is orthogonal to other and it has zero mutual inductance due to opposite flow of electric field and
easy to calculate total inductance. This method is used to analyze self and mutual inductance by considering
opposite parallel sides of spiral inductor in each turn. The self and mutual inductance is evaluated using the concept
of geometric mean distance (GMD) [27].

µn 2 davgC1   C 2  
Lgmd    ln   C 3   C 4  2  (2)
 
2    
Where the coefficients of Ci (C1, C2, C3) are layout dependent, µ is a permeability of substrate material, davg is
equal to average distance between inner (Di) to outer diameter (Dout) of symmetrical spiral inductor structure and ρ is
the fill ratio.

3.3. DFME (Data Fitted Monomial Expression)

The ME is one of the simple expressions to find the inductance value using data fitting technique in planar spiral
inductor.

Cmon  d 1outW  2 d  3 avgn 4 S  5 (3)

Where β and αi are layout dependents and dout, W, davg, n and S are monomial variables of the spiral inductor.
The monomial expression is useful like other expressions for accurate and simple to calculation of inductor value. It
can be used for optimal design of spiral inductors geometric design [27, 30].

4. Results and discussion

The spiral square inductor is designed using commercially available RT/Duriod substrate material and structure is
simulating with high frequency simulator tool (NI/AWR). The RT/duriod material dielectric constant is 3.66,
substrate height 0.508mm and thickness of the copper conductor is 0.032mm. The square spiral inductor is designed
with different turns, space, conductor width and inner diameter. All designed structures are EM-simulated and
validate with theoretically proposed simple equations. One of the EM-simulated 3D structures has shown in figure 3.
The electromagnetic simulator gives better efficiency at 600MHZ operating frequency. In square shaped structure is
divided in to 0.25mm mesh and calculates EM effect by applying maxwell’s equations for accurately calculate
inductance value [30, 31]. The two port structured of 4 turn square spiral inductor is designed using 3 layered
RT/Duroid substrate material. The input port at layer 2, using via to take out put at port 2 in layer 3. The copper
conductor material is used with 1mm thickness.

Fig.3. EM 3D structure
 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882 10879

4.1. Turns

To increases the conductor length by increasing number of turn in spiral inductor with constant conductor width,
space between the conductor and inner radius. The length of the conductor is directly proportional to inductance of a
spiral inductor. The turns are increased up to desired number with respect to designed frequency. Increases
frequency more over desired one then attains SRF, which is affect to decrease inductance. The figure 4, shows that
inductance v/s number of turns from 1 to 4. The inductance value is increased with respect to increase in turns. The
observed result shows that EM simulated results almost matched with the existing simple equations in below plot.
The table 1, show the data from designed spiral inductors at 600MHZ operating frequency.

Table 1. Inductance with Turns.

Turns MW (in nH) CSA (in nH) ME (in nH) EM-Sim (in nH)
1 1.151 1.137 1.136 1.68
2 5.54 5.559 5.744 6.41
3 15.62 15.822 16.23 17.07
4 33.72 34.4 34.954 37.75
(constant factors, W = 0.25mm, S = 0.25mm and Di= 0.5mm-using NI/AWR tool)

Fig.4. Inductance v/s Turns Fig.5.QF v/s Turns

The quality factor is one of figure of merit to justify spiral inductor efficiency. The figure 5 show quality factor
v/s number of turn, increases turns effect to increases quality factor at 600MHZ operating frequency. The obtained
results shows that at lower number of turn quality factor will become larger similarly increases the turns up to 4 the
quality factor is start to decreases observed between 3 to 4th turn. It happens because of increases in passive
components affect to attain SRF by increasing conductor length. Our designed and EM simulated structures gives
better quality factor at desired operating band.

4.2. Space between the conductors

Table 2. Inductance with Space Between the Conductors

Turns Space (S-in mm) MW (in nH) CSA (in nH ME (in nH) EM-Sim (in nH)
1 0.1 1.151 1.137 1.136 1.68
1 0.2 1.151 1.137 1.143 1.73
1 0.3 1.151 1.137 1.13 1.77
1 0.4 1.151 1.137 1.13 1.85
2 0.1 5.17 5.16 5.28 5.59
2 0.2 5.42 5.42 5.58 6.21
2 0.3 5.67 5.69 5.91 6.87
2 0.4 5.94 5.98 6.27 7.7
3 0.1 13.69 13.78 13.91 14.01
3 0.2 14.97 15.13 15.42 16.17
3 0.3 16.28 16.51 17.05 18.45
3 0.4 17.61 17.62 18.76 20.51
4 0.1 28.36 28.74 28.62 29.6
4 0.2 31.92 32.5 32.76 35.07
4 0.3 35.54 36.31 37.18 41.13
4 0.4 39.19 40.17 41.76 47.4
(constant factors, W = 0.25mmand Di= 0.5mm-using NI/AWR tool)
10880 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882

The space between conductors is important physical parameter helps to design high quality factor spiral inductor
due to reducing mutual inductance. The EM simulated results and calculated inductance value using simple
questions are shown in figure 6. The observed result shows that, simulated and calculated results are well matched
with each other. The space between the conductors varies from 0.1mm to 0.4 mm and turns from 1 to 4 at 600MHZ
operating frequency. Increases in frequency after (600MHZ) desired band then inductance value is decreases
because of passive component effect. The space between the conductor increases with conductor width, turns and
inner radius kept constant. The observed results shows that the theoretically calculated results are well matched EM
simulated results. The simulated results of different space and turns structure of symmetrical square spiral inductor
value is tabulated (in table 2) at 600MHZ operating frequency.

Fig.6. Inductance (nH) v/s Space between the Conductors (mm) Fig.7. Fig.7. Quality Factor v/s Space between the Conductors

4.3. Conductor width

Table 3. Inductance with Conductor Width

Turns Conductor (W-in mm) MW (in nH) CSA (in nH) ME (in nH) EM-Sim (in nH)
1 0.25 1.151 1.137 1.13 1.13
1 0.5 1.23 1.231 1.25 1.53
1 0.75 1.38 1.39 1.42 1.8
1 1 1.55 1.56 1.61 1.96
2 0.25 5.55 5.55 5.74 6.9
2 0.5 6.94 7.03 7.12 7.4
2 0.75 8.43 8.6 8.66 8.52
2 1 9.95 10.20 10.25 10.02
3 0.25 15.62 15.82 16.23 17.69
3 0.5 20.67 21.14 21.12 22.29
3 0.75 25.85 26.60 26.37 27.53
3 1 31.07 32.12 31.76 33.9
(constant factors S = 0.25mm andDi = 0.5mm-using NI/AWR tool)

Fig.8. Inductance (nH) v/s Conductor Width (mm) Fig.9. Quality Factor v/s Conductor Width (mm)

To increases the conductor width and space and inner radius of the spiral inductors are kept constant. The
width increases by increasing inductance value linearly up to designed operating frequency (600MHZ). The
increase in frequency after specified band it affects to decreases inductance due SRF. The conductor width is
varied from 0.25 mm to 1 mm with respect to turns (1-3) as shown in figure 8. At higher number of turns
conductor width will affect to increase passive component effect, it influence to decreases quality factor at desired
frequency band. The table 3 shows that data of different conductor width and turns of the spiral square spiral
inductor. The figure 9 shows the plot of inductance v/s conductor width. At lower turns we can achieve better
 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882 10881

quality factor than higher turns because of increasing fringing capacitance over desired operating band. The
space between the conductor increases to control fringe capacitance affect at larger conductor width [32-33].

4.4 Inner diameter

Table 4. Inductance with Inner Diameter

Turns Di (in mm) MW (in nH) CSA (in nH ME (in nH) EM-Sim (in nH)
1 0.25 0.619 0.616 0.608 0.93
1 0.5 1.151 1.137 1.136 1.15
1 0.75 1.743 1.729 1.729 1.82
1 1 2.371 2.372 2.369 2.54
2 0.25 3.841 3.905 3.951 4.39
2 0.5 5.548 5.559 5.744 6.08
2 0.75 7.429 7.388 7.716 8.08
2 1 9.448 9.361 9.833 10.2
3 0.25 12.06 12.39 12.456 13.73
3 0.5 15.624 15.822 16.23 17.46
3 0.75 19.468 19.546 20.298 21.67
3 1 23.557 23.518 24.619 26.42
4 0.25 27.625 28.551 28.487 31.04
4 0.5 33.725 34.4 34.954 37.75
4 0.75 40.212 40.662 41.827 45.76
4 1 47.048 47.284 49.036 54.8
(constant factorsS = 0.25mm andW = 0.25mm-using NI/AWR tool)

The inner radius of square spiral inductor is varied from 0.25 mm to 1 mm with respect to 1 to 4 turns. The
conductor width and space between the conductors are kept constant. The EM simulated result is compare with
simple equations result as shown in figure 10. The observed simulated result is well matched with simple equations
results. To increases the spiral inductor inner diameter will effect to increases total size of the conductor. The figure
11 shows that quality factor v/s inner diameter of the spiral inductor. The spiral inductor inner radius is increased to
increases the inductance value and quality factor at 600MHZ operating frequency. The increase of an inner diameter
will affect to avoid the mutual inductance and increases the quality factor. The table 4, shows that inductance v/s
inner diameters of square spiral inductors at 600MHZ. The observed result is well matched with simple equations.

Fig.10. Inductance (nH) v/s Inner Diameter (mm) Fig.11. Quality Factor v/s Inner Diameter (mm)

5. Conclusion

The square spiral inductor is designed using RT/Duriod substrate material with copper conductor of 0.035mm
thickness and 600MHZ operating frequency. The physical parameters like turns, space between the conductor,
conductor width and inner diameter of the spiral inductor are varied according to desired operating band and
analyzed the inductance and quality factor. The obtained EM simulated result gives better quality factor at lower
number of turns because of smaller series inductance. The observed results shows that EM simulated and calculated
results are matched well with each other. This work helps design square spiral inductor with specified inductance
value and desired quality factor for designing of filters, oscillators and amplifiers circuits in communication fields.
10882 Beeresha R S et al. / Materials Today: Proceedings 5 (2018) 10875–10882

Acknowledgements

The authors would like to thank ICON design Automation Pvt Ltd Bangalore, for their help and guidance to
carry out this work at their R&D lab.

References
[1] Pedder, D.J,“Technology and infrastructure for embedded passive components. On BoardTechnology,” pp. 8–11, 2005.
[2] Ulrich, R.K., Brown, W.D., Ang, S.S., Barlow, F.D., Elshabini, A., Lenihan, T.G., Naseem,H.A., Nelms, D.M., Parkerson, J., Schaper, L.W.,
Morcan, G,“Getting aggressive with passive devices,” IEEE Circuits Devices Mag. 16(5), 16–25, 2000.
[3] C. P.Yue et al., “A physical model for planar spiral inductors on silicon,” IEDM Tech. Dig., pp. 155–158, Dec. 1996.
[4] R. D. Lutz et al., “Modeling of spiral inductors on lossy substrates for RFIC applications,” Proc. 1998 Radio Frequency Integrated Circuits
Symp., pp. 313–316, June 1998.
[5] J. Crols, P. Kinget, J. Craninckx, and M. S. J. Steyaert, “An analytical model of planar inductors on lowly doped silicon substrates for high
frequency analog design up to 3 GHz,” in 1996 Symp. VLSI Circuits Dig. Tech. Papers, pp. 28–29, June 1996.
[6] T. H. Lee and S. S. Wong, CMOS RF integrated circuits at 5 GHz and beyond, Proc. IEEE, Vol. 88, pp. 1560-1571, Oct. 2000.
[7] T. H. Lee,” The Design of CMOS Radio-Frequency Integrated Circuits,” Cambridge University Press, 2002.
[8] A. Darwin Jose Raju, S. Solai Manohar andM. Azhagar Raj “Estimation of Inductance for Sine and Cosine Shape Spiral Coils,” IJAER, Vol.
II, pp-3663-3669, India, Num-2016.
[9] Saurabh Mehta and Manish Mehta, “A Novel Approach: Square Spiral Inductor for RF Telemetry Application,” IJCA, RTEC, pp-23-25,
India, 2013.
[10] J. R. Long and M. A. Copeland, “The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC’s”, IEEE J. of
Solid-State Circuits, Vol. 32, pp. 357-369, 1997.
[11] F. Ling, J. Song, T. Kamgaing, Y. Yang, W. Blood, M. Petras, and T. Myers, “Systematic analysis of inductors on silicon using EM
simulations”, Electronic Components, nd Technology Conference, pp. 484-489, 2002.
[12] I. D. Robertson and S. Lucyszyn, “RFIC and MMIC design and technology,” IEEE publishing, London, UK, 2001.
[13] P. Wu, Z. Wang, Y. Zhang, S. Sun and R. Xu, “Wideband Waveguide to Microstrip probe Transition With LTCC Technology,” Electronics
Letters 6th Vol. 47 No. 1, January 2011.
[14] Rosine Valois, Dominique B, Serge Verdeyme, Markku Lahti, and Tuomo, “High Performances of Shielded LTCC Vertical Transitions
From DC up to 50 GHz,” IEEE Transactions On Microwave Theory And Techniques, Vol. 53, No. 6, June 2005.
[15] HC. Lu, T. B. Chan, C. C-P. Chen, C-M Liu et al, “LTCC spiral inductor synthesis and optimization with measurement verification”, IEEE
Trans. Adv. Packag., vol. 33, no. 1, pp 160-168. Feb 2010.
[16] Rogers Corporation. TMM Thermoset Microwave Materials (datasheet).
[17] Nikola Gvozdenovic, Ralph Prestros, Christoph F. Mecklenbr¨auker “HF RFID Spiral Inductor Synthesis and Optimization,” 17th
International Symposium on Wireless Personal Multimedia Communications,Austria, 2004.
[18] W G Hurley, M C Duffy “Calculation of Self and Mutual Impedances in Planar Magnetic Structures,” IEEE Transaction on Magnetics,
Vol.,31, No.4. pp 2416-2422, July 1995.
[19] F. Grover, Inductance Calculations. Dover publications, 2004.
[20] H greenhouse, “Design of planar Rectangular Microelectronic Inductors,” IEEE Transaction on Parts, Hybrids and Package, Vol. PHP-10,
no. 2, pp. 101-109, June 1974.
[21] Sunderarajan S. Mohan, Maria del Mar Hershenson, Stephen P. Boyd, and Thomas H. Lee, “Simple Accurate Expressions for Planar Spiral
Inductances,” IEEE Journal Of Solid-State Circuits, Vol. 34, No. 10, pp. 1419-1424, October 1999.
[22] Pan, S. J., L. W. Li, and W. Y. Yin, “Performance trends of on-chip spiral inductors for RFICs,” Progress in Electromagnetic Research, Vol.
45, 123–151, 2004.
[23] C. Patrick Yue and S. Simon Wong, “Physical Modeling of Spiral Inductors on Silicon,” IEEE Transaction on Electron Devices, vol. 47, no.
3, pp. 560 – 568, March 2000.
[24] F. W. Grover,“Inductance Calculations,” New York, NY: Van Nostrand, 1962.
[25] Siamak Salimy, Antoine Goullet, Ahmed Rhallabi, Fatiha Challali, Serge Toutain, Jean Claude Saubat, “A Unified Analytical and Scalable
Lumped Model of RF CMOS Spiral Inductors Based on Electromagnetic Effects and Circuit Analysis,” Elsevier, Solid state electronics, 2011.
[26] R. B. Merrill, T. W. Lee, H. You, R. Rasmussen, and L. AS. Moberly, “Optimization of high Q integrated inductors for multilevel metal
CMOS,” in Proc. IEEE Int. Electron Devices Meeting, Washington, DC, pp. 38.7.1–38.7.4, 1995.
[27] H. A. Wheeler, “Simple inductance formulas for radio coils,” in Proc. IRE, vol. 16, no. 10, pp. 1398–1400, , Oct. 1928.
[28] E. B. Rosa, “Calculation of the self-inductances of single-layer coils,” Bull. Bureau Standards, vol. 2, no. 2, pp. 161–187, 1906.
[29] M. Hershenson, S. S. Mohan, S. P. Boyd, and T. H. Lee, “Optimization of inductor circuits via geometric programming,” in Design
Automation Conf., New Orleans, LA, pp. 994–998, June 1999.
[30] Andrea Sani, John Dunn, Vladimir Veremey,”Using EM Planar Simulators for Estimating the Q of Spiral Inductors,” AWR Corporation, a
National Instruments Company.
[31] L M Burns, “Integrated Circuits Technology Options for RFIC’s-Present Status and Future Directions,” IEEE J. Solid State Circuits, Vol.
33, pp. 387-399, Mar. 1998.
[32] E Frlan, S Meszaros, M Cuhaci and J S Wight, “Computer Aided Design of Square Spiral Transformers and Inductors,” IEEE MTT-S
International Microwave Symp, Long Beach, CA, pp. 661-664, 1989.
[33] G G Ranjohn, “Monolithic Microwave Transformers,” Thesis, Carlenton University, Canada, 1991.

View publication stats