1N4531 / 1N4148 / 1N4150 / 1N4448

Diodes

Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
∗This product is available only outside of Japan.

zApplication zExternal dimensions (Units : mm)

High-speed switching 1N4531
CATHODE BAND (BLACK)
Type No. φ 0.5±0.1

zFeatures
1) Glass sealed envelope. (MSD, GSD) C A

φ 1.8±0.2
2) High speed. 29±1 2.7±0.3 29±1

3) High reliability.
ROHM : MSD
EIAJ : −
JEDEC : DO-34
zConstruction
1N4148 / 1N4150 / 1N4448
Silicon epitaxial planar
CATHODE BAND (BLACK)
Type No. φ 0.5±0.1

C A

φ 1.8±0.2
29±1 3.8±0.2 29±1

ROHM : GSD
EIAJ : −
JEDEC : DO-35

zAbsolute maximum ratings (Ta = 25°C)

IFSM
VRM VR IFM IO IF 1µs P Tj Topr Tstg
Type
(V) (V) (mA) (mA) (mA) (A) (mW) (°C) (°C) (°C)

1N4531 100 75 450 150 200 2 500 200 −65~+200 −65~+200

1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200

1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200

1N4448 100 75 450 150 200 2 500 200 −65~+200 −65~+200

zElectrical characteristics (Ta = 25°C)

VF (V) BV (V) Min. IR (µA) Max. Cr (pF) trr (ns)
Type @25°C @150°C VR=6V
@ @ @ @ @ @ @ @ @ @ @ @ @ @ VR=0 IF=10mA
0.1mA 0.25mA 1mA 2mA 5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA 5µA 100µA VR (V) VR (V) f=1MHz RL=100Ω
0.025 20
1N4531 75 100 50.0 20 4 4
1.0 5.0 75
0.025 20
1N4148 75 100 50.0 20 4 4
1.0 5.0 75
0.54 0.66 0.76 0.82 0.87
1N4150 − 50 0.1 50 100.0 50 2.5 4
0.62 0.74 0.86 0.92 1.0
0.62 0.025 20
1N4448 − 100 50.0 20 4 4
0.72 1.0 5.0 75

The upper figure is the minimum VF and the lower figure is the maximum VF value.
 1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes

zElectrical characteristic curves (Ta = 25°C)

100 3.0

CAPACITANCE BETWEEN TERMINALS : CT (pF)

50 100°C f=1MHz
3000 2.5
FORWARD CURRENT : IF (mA)

REVERSE CURRENT : IR (nA)

20 1000
70°C 2.0
10
300
5 1.5
50°C
100
2
30 1.0
Ta=25°C
1
°C
25°C

Ta=25°C
Ta=75°C

Ta=−25

10 0.5
Ta=1

0.5

3
0.2 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 0 5 10 15 20 25 30
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V)

Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between

terminals characteristics

3 100
REVERSE RECOVERY TIME : trr (ns)

PULSE
VR=6V
SURGE CURRENT : Isurge (A)

50 Single pulse
Irr=1/10IR

2 20

10

1 5

0 1
0 10 20 30 0.1 1 10 100 1000 10000
FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms)

Fig. 4 Reverse recovery time Fig. 5 Surge current characteristics

characteristics

0.01µF D.U.T.

5Ω
PULSE GENERATOR SAMPLING
50Ω
OUTPUT 50Ω OSCILLOSCOPE

INPUT

100ns

OUTPUT
trr
0
0.1IR
IR

Fig. 6 Reverse recovery time (trr) measurement circuit

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0