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Silicon NPN Power Transistors: BUW12 BUW12A

The document provides product specifications for SavantIC Semiconductor's BUW12 and BUW12A silicon NPN power transistors. The transistors feature a TO-3PN package and are intended for high voltage, fast speed applications in industrial equipment. Key specifications include maximum voltage and current ratings, thermal characteristics, and switching times. The transistors have a collector-emitter saturation voltage below 1.5V and turn-on time below 1μs.

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108 views3 pages

Silicon NPN Power Transistors: BUW12 BUW12A

The document provides product specifications for SavantIC Semiconductor's BUW12 and BUW12A silicon NPN power transistors. The transistors feature a TO-3PN package and are intended for high voltage, fast speed applications in industrial equipment. Key specifications include maximum voltage and current ratings, thermal characteristics, and switching times. The transistors have a collector-emitter saturation voltage below 1.5V and turn-on time below 1μs.

Uploaded by

alexjcc10
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

DESCRIPTION
·With TO-3PN package
·High voltage,fast speed
·Low collector saturation voltage

APPLICATIONS
·Specially intended for operating
In industrial applications

PINNING (See Fig.2)

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
3 Emitter Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

BUW12 850
VCBO Collector-base voltage Open emitter V
BUW12A 1000

BUW12 400
VCEO Collector-emitter voltage Open base V
BUW12A 450

VEBO Emitter-base voltage Open collector 9 V

IC Collector current 8 A

ICM Collector current-peak 20 A

IB Base current 4 A

PT Total power dissipation TC=25 125 W

Tj Junction temperature 150

Tstg Storage temperature -65~175

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance from junction to case 1.2 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

BUW12 400
Collector-emitter
VCEO(SUS) IC=0.1A ; IB=0; L=25mH V
sustaining voltage
BUW12A 450

VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.5 V

VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V

BUW12 VCE=850V; VBE=0


Collector
ICES 1.0 mA
cut-off current
BUW12A VCE=1000V; VBE=0

IEBO Emitter cut-off current VEB=9V; IC=0 10 mA

hFE DC current gain IC=1A ; VCE=5V 15 50

Switching times resistive load

ton Turn-on time 1.0 µs

IC=6A ;IB1=-IB2=1.2A
ts Storage time 4.0 µs
VCC=240V

tf Fall time 0.8 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BUW12 BUW12A

PACKAGE OUTLINE

Fig.2 Outline dimensions

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