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Isc N-Channel MOSFET Transistor 2SK2564: Description

This document provides information on the 2SK2564 N-Channel MOSFET transistor from ISC Semiconductor. It has a continuous drain current of 8A at 25°C, with a drain-source voltage rating of 600V. It is designed for high-efficiency switch mode power supplies and has fast switching speeds with minimal lot-to-lot variations.

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69 views2 pages

Isc N-Channel MOSFET Transistor 2SK2564: Description

This document provides information on the 2SK2564 N-Channel MOSFET transistor from ISC Semiconductor. It has a continuous drain current of 8A at 25°C, with a drain-source voltage rating of 600V. It is designed for high-efficiency switch mode power supplies and has fast switching speeds with minimal lot-to-lot variations.

Uploaded by

luis silva
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc N-Channel MOSFET Transistor 2SK2564

DESCRIPTION
·Drain Current ID= 8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for high efficiency switch mode power supply.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 600 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-continuous@ TC=25℃ 8 A

ID(puls) Pulse Drain Current 24 A

Ptot Total Dissipation@TC=25℃ 50 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 3.47 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor 2SK2564

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 600 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.5 3.5 V

VSD Diode Forward On-Voltage IS=4A ;VGS= 0 1.5 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4A 1.2 Ω

IGSS Gate-Body Leakage Current VGS=±30V;VDS= 0 ±0.1 µA

IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 250 µA

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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