Basic Electrical and Electronics Engineering Lab

(BEC 105)

Lab Manual
A-105 & C-344
Version: 2.0 (16 August 2019)

School of Electrical, Electronics and Communication

Engineering
 School of Electrical, Electronics and Communication Engineering

BEEE Lab Organization Details

In-Charge Name Cabin No. Contact No.

Dean Dr. Priestly Shan C-317 8086304720

Program Chair Dr. Pratima Walde C-147 8506975021

Division Chair Dr. Lokesh Varshney C-033 9410481713

Lab-in-Charges Prof. Prabhat Kumar Srivastava C-146 8178592028

Technicians Mr. Lovelesh A-105 9818996881

Page No. 2 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

VISION & MISSION OF GALGOTIAS UNIVERSITY

Vision
To be known for world-class education, cutting-edge research, innovation, and application of
knowledge to benefit society.
Mission
M1: To provide high-quality education, knowledge and skills necessary for our students to be
successful in the technologically evolving world.
M2: To provide a supportive learning environment that facilitates discovery of new knowledge
and continuous innovation
M3: To instil a culture of interdisciplinary enquiry and education that facilitates generation of
cutting-edge solutions to real-world problems.
M4: To foster an environment that inculcates skills in life-long learning and team based problem
solving.

VISION & MISSION OF ECE DEPARTMENT

Department Vision
To be known globally as a premier department of Electronics and Communication Engineering
for value based education and interdisciplinary research for innovation.

Department Mission
M1: Create a strong foundation on fundamentals of Electronics and Communication Engineering
through Outcome Based Learning Teaching (OBLT) Process.
M2: Establish state-of -the-art facilities for design and simulation.
M3: Provide opportunities to students to work on real world problems and develop sustainable
ethical solutions.
M4: Involve the students in group activities, including those of professional bodies to develop
leadership and communication skills.

Page No. 3 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Programme Outcome (PO)

PO1: Engineering knowledge: Apply the knowledge of mathematics, science, engineering fundamentals,
and an engineering specialization to the solution of complex engineering problems. PO2: Problem
analysis: Identify, formulate, review research literature, and analyze complex engineering problems
reaching substantiated conclusions using first principles of mathematics, natural sciences, and engineering
sciences.
PO3: Design/development of solutions: Design solutions for complex engineering problems and design
system components or processes that meet the specified needs with appropriate consideration for the
public health and safety, and the cultural, societal, and environmental considerations.
PO4: Conduct investigations of complex problems: Use research-based knowledge and research methods
including design of experiments, analysis and interpretation of data, and synthesis of the information to
provide valid conclusions.
PO5: Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities with an
understanding of the limitations.
PO6: The engineer and society: Apply reasoning informed by the contextual knowledge to assess
societal, health, safety, legal and cultural issues and the consequent responsibilities relevant to the
professional engineering practice.
PO7: Environment and sustainability: Understand the impact of the professional engineering solutions in
societal and environmental contexts, and demonstrate the knowledge of, and need for sustainable
development.
PO8: Ethics: Apply ethical principles and commit to professional ethics and responsibilities and norms of
the engineering practice.
PO9: Individual and team work: Function effectively as an individual, and as a member or leader in
diverse teams, and in multidisciplinary settings.
PO10: Communication: Communicate effectively on complex engineering activities with the engineering
community and with society at large, such as, being able to comprehend and write effective reports and
design documentation, make effective presentations, and give and receive clear instructions.
PO11: Project management and finance: Demonstrate knowledge and understanding of the engineering
and management principles and apply these to one’s own work, as a member and leader in a team, to
manage projects and in multidisciplinary environments.
PO12:Life-long learning: Recognize the need for, and have the preparation and ability to engage in
independent and life-long learning in the broadest context of technological change.
Page No. 4 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

COURSE OBJECTIVES
1. Verifying and analyzing the practical network circuits.
2. Use of basic laboratory equipment and procedure to measure electrical quantities using
laboratory test equipment such as multimeters, power supplies etc.
3. Analyzing and solving different electrical and electronic circuits by applying different
laws.
4. Evaluate the performance of electrical and electronic circuits.
COURSE OUTCOMES
On completion of this course, the students will be able to
CO 1: Handle of basic electrical and electronics equipment’s.
CO 2: Measure electrical quantities and calculate various parameters.
CO 3: Understand and analyze the performance of various circuit connections.
CO 4: Design of basic electronic circuits and systems.
CO 5: Analyze the fundamental concepts involving electrical and electronics
engineering.
CO-PO Mapping
Conduct investigations of

The engineer and society

Project management and

Engineering Knowledge

Individual or team work

Design/development of

Basic Electrical

Life-long Learning
Modern tool usage
complex problems

Environment and
Problem analysis

Communication
and Electronics
sustainability

Engineering Lab
solutions

(BEC151) finance

PSO 1

PSO 2

PSO 3
Ethics

COs 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Handle of basic electrical and

1 3 3 3 3
electronics equipment’s.
Measure electrical quantities and
2 calculate various parameters.
3 3 3
Understand and analyze the
3 performance of various circuit 3 3 3 3 3 3
connections.
Design of basic electronic
4 circuits and systems
3 3 2 3 3 2 3
Analyze the fundamental
5 concepts involving electrical and 3 3 3 1 3 1 3
electronics engineering.

Page No. 5 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

CO-PO Mapping - JUSTIFICATION

Page No. 6 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

RUBRICS FOR CO ASSESSMENT

Component of Rubric for CO

Internal/External Marks
Evaluation Assessment

Continuous
R0 20
Evaluation

Pre-Final Internal R1 20
Lab Test
R3
10
Internal Viva (Theory, Tools,
(2+4+4)
Team Work)

ETE Lab Test R1 20

Lab Report R2 20
External

Viva by R3
10
External (Theory, Tools,
(2+4+4)
Expert Team Work)

TOTAL 100

Page No. 7 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Galgotias University
School of Electrical, Electronics and Communication Engineering
Continuous Evaluation (Based on Rubrics - R0)
Subject Code & BASIC ELECTRICAL AND ELECTRONICS ENGINEERING LAB
Subject Name BEEE LAB (BEC 151)
Class B.Tech. (CSE) Term Fall 2019
Semester / Year Ist Sem (Sec - 3) Academic Year: 2019-20
Experiment No. : Objective:

Designing Circuits
Familiarization

Interpretation
Components /

Experimental

Total Marks
Equipments

Viva - Voce
Programs
/ Writing
with the

Results

Result
Sl. Enrollment Name of the
No. Number Student

2 6 4 4 4 20
1
2
3
4
5
6
7
8
9
10
11
12
13

Page No. 8 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

BEEE Lab Assessment Process

 Faculty members must carry the attendance register.
 Before coming to class faculty members must have ensured the students get the lab
manual.
 Clearly define the lab problem to the students and the expected outcome of the
experiment.
 Clearly explain the objective and theory behind the lab experiments.
 All faculty members in a lab class shall actively participate in the lab experiment giving
guidance to students.
 Faculty members must check the results obtained by each student and sign on it.
 Faculty members must correct the error in results and instruct student to do necessary
modification in experiment to get the correct results.
 Faculty must take a note of any mal functioning of equipment or component if found
during the tour of lab.
 Faculty must check and correct the student’s lab records.
 Faculty members evaluate the student’s performance in the lab class as a part of
continuous evaluation.
 Faculty must give the assignment or lab problem to students for lab based solutions and
shall assess the course outcomes based on performance of students.
 Faculty must ensure that each student endorse the following and upload in Moodle;
 Preparation of data table and plot the graphs
 students must explain data in table or graphs
 Students must write the observation on data pattern or behavior of graphs.
 Students must write the scientific justification of data variation or graphs
behavior.
 Students must write the error in results if any obtained during experiment.
 One course file is to be maintained for each course and all faculties must put the
necessary documents of practice in the course file time to time.
 Faculty must declare the title of next experiment and must the students to go through lab
manual before coming to lab.
 Faculty members must do the counseling to students who were absent in last class and
instruct them to complete missed out experiment in extra time, otherwise the student will
lose the marks.

Page No. 9 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

LIST OF EXPERIMENTS

Ser Objective
To familiarize with Electrical and Electronics Lab Equipment and basic Electronics
1
Components

2 To verify (i) Kirchhoff’s Current law (ii) Kirchhoff’s Voltage law.

Observe the given waveform (Sinusoidal/Square/Triangular) and calculate it's

3
Frequency, Peak Value, Average Value, RMS Value and Form factor.

4 Verification of Truth table of Logic Gates (AND, OR, NOT, NAND and NOR)

To plot the V-I Characteristics of P-N Junction Diode and calculate the forward and
5
reverse resistance of the Diode.
6 Verification of Regulation action of ZENER Diode.
To connect the Wave Shaping Circuits (Clipper Circuit) and observe and sketch the
7
Wave form.
To verify the working of Full Wave Rectifier Circuit (Bridge Rectifier) and calculate
8
it's efficiency.
To plot the input and output characteristics of a Bipolar Junction Transistor (BJT) in
9
Common Emitter (CE) connection.

EXPERIMENT – BEYONED SYLLABUS

10 To connect the Half Adder and Full Adder circuit and verify the truth table.

To verify the working of Full Wave Rectifier Circuit (using Centre tapped transformer) and
11
calculate it's efficiency.

Project – Students should be encouraged to make a working model/Project to

12
demonstrate any Transducer/Sensor action or any related field

Page No. 10 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Details of the Experiments

Page No. 11 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT – (1A)

OBJECTIVE: To familiarize with Measuring and testing equipments like Multimeter, CRO,
Function Generator, Power Supply etc and also familiarize with bread board, resistors and
capacitors etc.

THEORY:

Cathode Ray Oscilloscope

A cathode ray oscilloscope is a very fast X-

Y plotters that can display an input signal
versus time or other signal. Cathode ray
oscilloscopes use luminous spots which are
produced by striking the beam of electrons
and this luminous spot moves in response
variation in the input quantity.

Multimeter
A multimeter or a multitester, also known as
a VOM (volt-ohm-milliammeter), is
an electronic measuring instrument that
combines several measurement functions in
one unit. A typical multimeter can
measure voltage, current,
and resistance. Analog multimeters uses
a microammeter with a moving pointer to
display readings. Digital
multimeters (DMM, DVOM) have a
numeric display, and may also show a
graphical bar representing the measured
value. Digital multimeters are now far more
common due to their lower cost and greater
precision, but analog multimeters are still
preferable in some cases, for example when
monitoring a rapidly varying value.

Page No. 12 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

F
Function Generator
A signal or function generator is a device
that can produce various patterns of voltage
at a variety of frequencies and amplitudes. A
common use is to test the response of
circuits to a known input signal.
Most function generators allow you to
generate sine, square or triangular
AC function signals.

Regulated Power Supply

A regulated power supply is used to ensure

that the output remains constant even if the
input changes. A regulated DC power
supply is also known as a linear power
supply, it is an embedded circuit and
consists of various blocks. The regulated
power supply will accept an AC input and
give a constant DC output.

Bread Board

Page No. 13 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Testing of Resistance Value / Color Code:

Page No. 14 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT – (1B)
OBJECTIVE: To Calculate the Resistance value according to Color band and verify the same
by measuring through Multimeter.

OBSERVATION TABLE:
S. No. Resistor Color Band Calculated Value Measured Value Remark
of “R” (Ohm) of “R” (Ohm)
1. R1 1. 1
2.
3.
4.
2. R2 1. 3
2.
3.
4.
3. R3 1. 4
2.
3.
4.
4. R4 1.
2.
3.
4.

CALCULATIONS:

QUESTIONS:
1. What do you understand by tolerance value in case of resistors?

Page No. 15 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 2 (A)

AIM: To verify the Kirchhoff’s current law (KCL).

OBJECTIVE: The objective of this Lab activity is to verify Kirchhoff's Current Law (KCL)
using mesh and nodal analysis of the given circuit.
THEORY: According to Kirchhoff’s current law, in any network of wires carrying currents, the
algebraic sum of all currents meeting at a junction (or node) is zero or the sum of incoming
currents towards any junction (or node) is equal to the sum of outgoing currents away from that
junction.
APPARATUS REQUIRED:

S. No. Equipment Specification Quantity Remark

1. Regulated power DC Supply 0-24V 1
2. PMMC Ammeter 0-1A 3
3. Resistances/Rheostats 4
4. Connecting Wires

CIRCUIT DIAGRAM:

Figure 1 Circuit Diagram

Page No. 16 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

PROCEDURE: Four Resistance R1, R2, R3and R4; and ammeters A1, A2and A3are connected
to DC battery or regulated DC power supply as shown in figure. The Four Resistances are
connected as per circuit diagram, supply is switched on and the reading of the ammeter A1,
A2and A3are noted. The process may be repeated by varying either of resistancesR1, R2, R3 and
R4.
OBSERVATIONS:
S. No. Reading of Ammeter Reading of Reading of I2+I3
A1 (I1) Ammeter A2 (I2) Ammeter A3 (I3)
1.
2.
3.
4.
5.

WORKING PRINCIPLE: The algebraic sum of currents in a network of conductors meeting at

a point is zero. Recalling that current is a signed (positive or negative) quantity reflecting
direction towards or away from a node; this principle can be stated as:
N

I
k 1
k 0

N is the total number of branches with currents flowing towards or away from the node.The law
is based on the conservation of charge whereby the charge (measured in coulombs) is the product
of the current (in amperes) and the time (in seconds).
KEY PARAMETERS: Let R1  220, R2  1k , R3  330, R4  330 and also calculate the

Actual  Measured
error  100 .
Actual
RESULTS:
 Calculate the ideal voltages and currents for each element in the circuit and
compare them to the measured values.
 Compute the percentage error in the two measurements and provide a brief
explanation for the error.

Page No. 17 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

PRECAUTIONS:
 All connections should be tight.
 All steps should be followed carefully.
 Readings and calculation should be taken carefully.
 Don’t touch the live terminals.

QUESTIONS:
1. What is KCL?
2. What is ohm’s law?
3. What is difference between emf and potential difference?
4. Why ammeters are connected in series to measure current?
5. If the length of a wire of resistance R is uniformly stretched to n times its original value,
what will be its new resistance?

________________________________________________________________

Page No. 18 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 2(B)
AIM: To verify the Kirchhoff’s voltage law (KVL).

OBJECTIVE: The objective of this Lab activity is to verify Kirchhoff's voltage Law (KVL)
using mesh and nodal analysis of the given circuit.

THEORY: According to Kirchhoff’s voltage law, in any closed circuit or mesh, the algebraic
sum of emf acting in the circuit or mesh is equal to the algebraic sum of the products of the
currents and resistances of each part of the circuit or mesh.

APPARATUS REQUIRED:

S. No. Equipment Specification Quantity Remark

1. Regulated power DC 0-24V 1
supply or Battery
2. PMMC Voltmeter 0-24V 4
3. Resistances/Rheostats 4
4. Connecting Wires

CIRCUIT DIAGRAM:

Figure 2 KVL Circuit Diagram

PROCEDURE: Resistances R1, R2, R3 and R4; and three voltmeters V1, V2 , V3 and V4are
connected to DC battery or regulated power supply as shown in figure. Three rheostats are set
their maximum values, supply is switched on and the reading of the voltmeters V 1, V2, V3and V4
is noted. The process may be repeated by varying either of resistances R 1, R2, R3 and R4.

Page No. 19 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

OBSERVATIONS:
Reading Reading Reading Reading
of of of of
S. No. V=V1+V2 V2=V3+V4
Voltmeter Voltmeter Voltmeter Voltmeter
V1(Volts) V2(Volts) V3(Volts) V4(Volts)

WORKING PRINCIPLE: The sum of the emfs in any closed loop is equivalent to the sum of
the potential drops in that loop, or: The algebraic sum of the products of the resistances of the
conductors and the currents in them in a closed loop is equal to the total emf available in that
loop.Similar to KCL, it can be stated as:
N

V
k 1
k 0

N is the total number of branches with currents flowing towards or away from the node.
This law is based on the conservation of energy whereby voltage is defined as the energy per unit
charge. The total amount of energy gained per unit charge must be equal to the amount of energy
lost per unit charge, as energy and charge are both conserved.

KEY PARAMETERS: Let R1  220, R2  1k , R3  330, R4  330 and also calculate the

Actual  Measured
Error   100 .
Actual

RESULT:
1. Calculate the ideal voltages and currents for each element in the circuit and compare
them to the measured values.
2. Compute the percentage error in the two measurements and provide a brief explanation
for the error.

Page No. 20 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

PRECAUTIONS:
 All connections should be tight.
 All steps should be followed carefully.
 Readings and calculation should be taken carefully.
 Don’t touch the live terminals.

QUESTIONS:
1. What is KVL?
2. What is ohm’s law?
3. Why voltmeters are connected in parallel to rheostats to measure voltage?
4. How does the resistance of a homogeneous material having constant length vary with the
changing cross sectional area?
5. What is Fleming’s left hand rule?
6. What is Fleming’s right hand rule?
7. Define junction and node.
8. Define Mesh and loop.

Page No. 21 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 3

OBJECTIVE: Observe the given waveform (Sinusoidal/Square/Triangular) and calculate it's

Frequency, Peak Value, Average Value, RMS Value and Form factor.

THEORY:

APPARATUS REQUIRED:

S. No. Equipment Specification Quantity Remark

1. Function Generator
2. CRO
3.
4.

PROCEDURE:
1. Connect the CRO probes to output of function Generator.
2. Switch on the Function generator and CRO.
3. Observe the Sine waveform and measure its peak voltage, time period etc.

Page No. 22 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

4. Calculate the Frequency, Peak Value, Average Value, RMS Value and Form factor of the
Sine wave using the formula.

5. Repeat the experiment for different type of waveform (Triangular wave, Square wave)
and measure the listed parameters.

OBSERVATIONS:
S. No. Sine Wave Triangular Wave Square Wave
Peak Voltage
Time Period

CALCULATIONS: Calculate the listed electrical parameters using formula.

PRECAUTIONS:
 All connections should be tight.
 All steps should be followed carefully.
 Readings and calculation should be taken carefully.

QUESTIONS:
1. What is the formula for RMS value?
2. How is average value different from RMS value?
3. What is Form factor?

Page No. 23 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 4
AIM: Verification and interpretation of truth tables for AND, OR, NOT, NAND, NOR,
Exclusive OR (EX-OR), Exclusive NOR (EX-NOR) Gates.

OBJECTIVE: To study the basic and universal logic gates integrated circuits (ICs) and verify it
through proper connection on bread board.

THEORY: Logic gates are electronic circuits which perform logical functions on one or more
inputs to produce one output. There are seven logic gates. When all the input combinations of a
logic gate are written in a series and their corresponding outputs written along them, then this
input/ output combination is called Truth Table.

APPARATUS REQUIRED:
S. No. Equipment Specification Quantity Remark
1. Regulated power DC 0-24V 1
supply source
2. Logic gates / ICs
AND 7408 1
OR 7432 1
NOT 7404 1
NAND 7400 1
NOR 7402 1
X-OR 7486 1
X-NOR 74266 1
3. LED 1
4. Connecting Wires

CIRCUIT DIAGRAM and TRUTH TABLE:

AND Gate( IC 7408): AND gate produces an output as 1, when all its inputs are 1; otherwise
the output is 0. This gate can have minimum 2 inputs but output is always one. Its output is 0
when any input is 0.

Page No. 24 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

OR Gate (IC 7432): OR gate produces an output as 1, when any or all its inputs are 1; otherwise
the output is 0. This gate can have minimum 2 inputs but output is always one. Its output is 0
when all input are 0.

NOT Gate (IC 7404): NOT gate produces the complement of its input. This gate is also called
an INVERTER. It always has one input and one output. Its output is 0 when input is 1 and output
is 1 when input is 0.

NAND Gate (IC 7400): NAND gate is actually a series of AND gate with NOT gate. If we
connect the output of an AND gate to the input of a NOT gate, this combination will work as
NOT-AND or NAND gate. Its output is 1 when any or all inputs are 0, otherwise output is 1.

Page No. 25 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

NOR Gate (IC 7402): NOR gate is actually a series of OR gate with NOT gate. If we connect
the output of an OR gate to the input of a NOT gate, this combination will work as NOT-OR or
NOR gate. Its output is 0 when any or all inputs are 1, otherwise output is 1.

Exclusive OR (X-OR) Gate: X-OR gate produces an output as 1, when number of 1’s at its
inputs is odd, otherwise output is 0. It has two inputs and one output.

Exclusive NOR (X-NOR) Gate: X-NOR gate produces an output as 1, when number of 1’s at
its inputs is not odd, otherwise output is 0. It has two inputs and one output.

PROCEDURE:
1. Connect the trainer kit to DC power supply.
2. Connect the inputs of any one logic gate to the logic sources and its output to the logic
indicator.
3. Apply various input combinations and observe output for each one.
4. Verify the truth table for each input/ output combination.
5. Repeat the process for all other logic gates.
6. Switch off the ac power supply.

Page No. 26 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

KEY PARAMETERS:

Input level and output level are 5 Volts

AND Gate (IC 7408) NAND Gate (IC 7400)
OR Gate (IC 7432) NOR Gate (IC 7402)
NOT Gate (IC 7404) EX-OR Gate (IC 7486)

EXPERIMENT RESULT:

 Give the scientific explanation regarding the observations.

 Explain internal structure of the ICs.

PRECAUTIONS:
 All connections should be tight.
 All steps should be followed carefully.
 Readings and calculation should be taken carefully.
 Don’t touch the live terminals.

QUESTIONS:

 What is a Logic Gate?

 What are Universal Gates?
 What are Basic Gates?
 State De-Morgan’s Theorem.
 When the output of a NOR Gate is High?
 Which of the two input logic gate can be used to implement an inverter circuit?

Page No. 27 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 5

AIM: To verify the functionality of PN junction diode in forward bias and reverse bias.
OBJECTIVE: To study Volt-Ampere Characteristics of P-N Diode and also find cut-in voltage
for P-N Junction diode.
THEORY: A PN junction diode is formed when a single crystal of semiconductor is doped with
acceptors impurities (Pentavalent) on one side and donor impurities (Trivalent) on the other side.
It has two terminals called electrodes, one each from P-region and N-region. Due to two
electrodes it is called (i.e., Di-electrode) Diode.

Biasing of PN junction Diode:

Applying external D.C. voltage to any electronic device is called biasing. There is no current in
the unbiased PN junction at equilibrium. Depending upon the polarity of the D.C. voltage
externally applied to diode, the biasing is classified as forward biasing and Reverse biasing.

Forward bias operation: The P-N junction supports uni-directional current flow. If +ve
terminal of the input supply is connected to anode (P-side) and –ve terminal of the input supply
is connected the cathode. Then diode is said to be forward biased. In this condition the height of
the potential barrier at the junction is lowered by an amount equal to given forward biasing
voltage. Both the holes from p-side and electrons from n-side cross the junction simultaneously
and constitute a forward current from n-side cross the junction simultaneously and constitute a
forward current (injected minority current – due to holes crossing the junction and entering P-
side of the diode). Assuming current flowing through the diode to be very large, the diode can be
approximated as short- circuited switch.

Reverse bias operation: If negative terminal of the input supply is connected to anode (p-side)
and –ve terminal of the input supply is connected to cathode (n-side) then the diode is said to be
reverse biased. In this condition an amount equal to reverse biasing voltage increases the height
of the potential barrier at the junction. Both the holes on P-side and electrons on N-side tend to
move away from the junction there by increasing the depleted region. However the process
cannot continue indefinitely, thus a small current called reverse saturation current continues to
flow in the diode. This current is negligible; the diode can be approximated as an open circuited
switch.
Diode current equation: The volt-ampere characteristics of a diode explained by the following
equations:

Page No. 28 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

I = current flowing in the diode, I0 = reverse saturation current

V = Voltage applied to the diode
VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp)
=1 (for Ge) and 2 (for Si). It is observed that Ge diodes has smaller cut-in-voltage when
compared to Si diode. The reverse saturation current in Ge diode is larger in magnitude when
compared to silicon diode.

APPARATUS REQUIRED:
S. No. Components/Equipments Quantity Remarks
1 Diode (1N4007) 1
2 Resistor (1K) 1
3 Dual DC Regulated Power supply (0 - 30 V) 1
4 Digital Ammeters ( 0 - 200 mA, 0 - 200 µA) 1
5 Digital Voltmeter (0 - 20V) 1
6 Connecting wires 1
7 Bread board 1

CIRCUIT DIAGRAM:

Forward Bias Condition: Forward Bias Condition is given as

Figure: Forward Bias Connection

Page No. 29 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Reversed Bias Condition: Reversed Bias Condition is given as:

Figure: Reverse Biased Connection

PROCEDURE:

Forward Bias Condition:

1. Connect the circuit as shown in figure (1) using PN Junction diode.
2. Initially vary Regulated Power Supply (RPS) voltage Vs in steps of 0.1 V. Once the
current starts increasing vary Vs from 1V to 12V in steps of 1V and note down the
corresponding readings Vf and If.
3. Tabulate different forward currents obtained for different forward voltages.

Reverse Bias Condition:

1. Connect the circuit as shown in figure (2) using PN Junction diode.
2. Vary Vs in the Regulated Power Supply (RPS) gradually in steps of 1V from 0V to 12V
and note down the corresponding readings Vr and Ir.
3. Tabulate different reverse currents obtained for different reverse voltages.
4. To get the graph in reverse region (theoretically), remove voltmeter and with reference to
the supply voltage note down the reverse current readings in Ammeter because current
always selects low reactance path.(Diode have infinite resistance in reverse bias
ideally).To get the graph in reverse region (theoretically), replace voltmeter with nano
ammeter. Voltmeter has less load resistance when compared to diode. Current conducts
in low resistance path.

Page No. 30 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

OBSERVATIONS:

Forward Bias Condition:

RPS Forward Voltage across the Forward Current through the

Voltage Vs (volts) diode Vf (volts) diode If (mA)
1
2
3
4
5
6
7
8
9
10

Reverse Bias Condition:

RPS Reverse Voltage across the diode Reverse Current through the
Voltage Vs (volts) Vr (volts) diode Ir (µA)
1
2
3
4
5
6
7
8
9
10

Graph:

1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph
sheet.
2. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as If and –ve Y-axis as Ir.
3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si
reverse biased condition in third Quadrant.

Page No. 31 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

V- I Characteristics of PN Junction Diode:

Fig: V- I Characteristics of PN Junction Diode under Forward & Reverse Bias Conditions

KEY PARAMETERS:

List of Parameters SILION DIODE (1N4007)

Maximum Forward Current 1A
Maximum Reverse Current 5.0µA
Maximum Forward Voltage 0.8V
Maximum Reverse Voltage 1000V
Maximum Power Dissipation 30mW
Temperature -65 to 200° C

EXPERIMENT RESULT:

1. Calculate the ideal voltages and currents for each element in the circuit and compare
them to the measured values.
2. Compute the percentage error in the two measurements and provide a brief explanation
for the error.
3. Give the explanation regarding the error in terms of different causes etc.
4. Explain the behavior of the graph and why it is so?

Page No. 32 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

PRECAUTIONS:
1. While doing the experiment do not exceed the readings of the diode. This may lead to
damaging of the diode.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.

QUESTIONS:

1. What are trivalent and pentavalent impurities?

2. How PN junction diode does acts as a switch?
3. What is diode current equation?
4. What is the value of Vt at room temperature?
5. Dynamic resistance expression?
6. What is a semiconductor?
7. What is meant by intrinsic semiconductor?
8. What is the order of energy gap in a pure semiconductor?
9. What is an extrinsic semiconductor?
10. What is a doped semiconductor?
11. What is doping?
12. What are two different types of impurities?
13. To which group does a (i) p-type, (ii) n type impurity belong?
14. What are the charge carriers in a pure semiconductor?
15. What are the charge carriers in n-type semiconductor?

Page No. 33 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 6

AIM: Verify the regulation action of Zener diode.

OBJECTIVE: To plot the Volt-Ampere Characteristics of Zener Diode and also find Zener
Breakdown Voltage in Reverse Biased conditions and observe the regulation action.
THEORY:
Zener diodes are a special kind of diode which permits current to flow in the forward direction.
What makes them different from other diodes is that Zener diodes will also allow current to flow
in the reverse direction when the voltage is above a certain value. This breakdown voltage is
known as the Zener voltage. In a standard diode, the Zener voltage is high, and the diode is
permanently damaged if a reverse current above that value is allowed to pass through it. Zener
diodes are designed in a way where the Zener voltage is a much lower value. There is a
controlled breakdown which does not damage the diode when a reverse current above the Zener
voltage passes through a Zener diode.
The most common values for nominal working voltage are 5.1 V, 5.6 V, 6.2 V, 12 V and 15 V.
We also carry Zener diodes with nominal working voltage up to 1 kV. Forward (drive) current
can have a range from 200 uA to 200 A, with the most common forward (drive) current being 10
mA or 200 mA. In the forward bias direction, the zener diode behaves like an ordinary silicon
diode.
In the reverse bias direction, there is practically no reverse current flow until the breakdown
voltage is reached. When this occurs there is a sharp increase in reverse current. Varying amount
of reverse current can pass through the diode without damaging it. The breakdown voltage or
zener voltage (VZ) across the diode remains relatively constant. The maximum reverse current is
limited, however, by the wattage rating of the diode.
Avalanche Break down:
When the diode is in the reverse bias condition, the width of the depletion region is more. If both
p-side and n-side of the diode are lightly doped, depletion region at the junction widens. In
reverse bias, the minority charge carrier current flows through junction. As the applied reverse
voltage increases the minority carriers acquire sufficient energy to collide with the carriers in the
covalent bonds inside the depletion region. As a result, the bond breaks and electron hole pairs
are generated. The process becomes cumulative and leads to the generation of a large number of
charge carriers resulting in Avalanche Breakdown.
Zener Break down:
If both p-side and n-side of the diode are heavily doped, depletion region at the junction reduces
compared to the width in normal doping. Applying a reverse bias causes a strong electric field

Page No. 34 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

get applied across the device. As the reverse bias is increased, the Electric field becomes strong
enough to rupture covalent bonds and generate large number of charge carriers. Such sudden
increase in the number of charge carriers due to rupture of covalent bonds under the influence of
strong electric field is termed as Zener breakdown.
Zener Diode as Voltage Regulator:
The function of a regulator is to provide a constant output voltage to a load connected in parallel
with it in spite of the ripples in the supply voltage or the variation in the load current and the
zener diode will continue to regulate the voltage until the diodes current falls below the
minimum IZ(min) value in the reverse breakdown region. It permits current to flow in the
forward direction as normal, but will also allow it to flow in the reverse direction when the
voltage is above a certain value - the breakdown voltage known as the Zener voltage. The Zener
diode specially made to have a reverse voltage breakdown at a specific voltage. Its
characteristics are otherwise very similar to common diodes. In breakdown the voltage across the
Zener diode is close to constant over a wide range of currents thus making it useful as a shunt
voltage regulator.
The purpose of a voltage regulator is to maintain a constant voltage across a load regardless of
variations in the applied input voltage and variations in the load current. The resistor is selected
so that when the input voltage is at VIN(min) and the load current is at IL(max) that the current
through the Zener diode is at least Iz(min). Then for all other combinations of input voltage and
load current the Zener diode conducts the excess current thus maintaining a constant voltage
across the load. The Zener conducts the least current when the load current is the highest and it
conducts the most current when the load current is the lowest.

APPARATUS REQUIRED:
S. No. Components/Equipments Quantity Remarks
1 Zener Diodes (1N4735A) 1
2 Resistors (1K , 3.3 ) 1
3 Dual DC Regulated Power supply (0 - 30 1
V)
4 Digital Ammeters ( 0 - 200 mA, 0 - 200 1
µA)
5 Digital Voltmeter (0 - 20V) 1
6 Connecting wires 1
7 Bread board 1

Page No. 35 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

CIRCUIT DIAGRAM:

Figure: Forward Bias Condition

Figure: Reverse Bias Condition

PROCEDURE:
a) Forward Bias Condition:
1. Connect the circuit as shown in figure (1).
2. Initially vary Vs in steps of 0.1V. Once the current starts increasing vary Vs in steps of 1V
up to 12V. Note down the corresponding readings of V zf and Izf.

b) Reverse Bias Condition:

1. Connect the circuit as shown in figure (2).

2. Vary Vs gradually in steps of 1V up to 12V and note down the corresponding readings of
Vzr and Izr.
3. Tabulate different reverse currents obtained for different reverse voltages.

Page No. 36 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

OBSERVATIONS:

Table: 1 Forward Bias Condition:

RPS Forward Voltage across the diode Forward Current through the diode
Voltage Vs(volts) Vzf (volts) Izf (mA)

Table: 2 Reverse Bias Condition:

RPS Reverse Voltage across the diode Reverse Current through the diode
Voltage Vs(volts) Vzr (volts) Izr (mA)

Fig: V- I Characteristics of Zener Diode under Forward & Reverse Bias Conditions

Page No. 37 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

KEY PARAMETERS:
 Breakdown Voltage = 5.1V
 Power dissipation = 0.75W
 Max Forward Current = 1A

EXPERIMENT RESULT:
1. Calculate the ideal voltages and currents for each element in the circuit and compare
them to the measured values.
2. Compute the percentage error in the two measurements and provide a brief explanation
for the error.
3. Give the explanation regarding the error in terms of different causes etc.
4. Explain the behavior of the graph and why it is so?

PRECAUTIONS:

1. While doing the experiment do not exceed the readings of the diode. This may lead to
damaging of the diode.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.

QUESTIONS:
1. What is the doping concentration in Zener diodes?
2. Can we use Zener diode as a switch?
3. What is PIV of Zener?
4. What will happen if P-N regions are heavily doped in Zener diode?
5. List the other Zener diodes with different breakdown voltages.
6. Is the breakdown region in Zener really destructible?
7. What is a Zener diode?
8. How the name of the Zener came?
9. What is cause of reverse breakdown?
10. What is Zener voltage?
11. What are trivalent and penatavalent impurities?
12. What is the difference between p-n Junction diode and zener diode?
13. What is break down voltage?
14. What are the applications of Zener diode?
15. What is cut-in-voltage?

Page No. 38 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 7
AIM: To study the basic wave shaping circuits
OBJECTIVE: To connect the Wave shaping circuit – Clipper circuit in different conditions and
observe and sketch the input and output waveform.
THEORY:
Electronic devices are very sensitive to voltage. If a large amplitude voltage is applied, it may
permanently destroy the device. So, it is essential to protect the electronics devices.

The protection of the electronic devices can be achieved by using the clipper circuits.

A clipper is a device that removes either the positive half (top half) or negative half (bottom
half), or both positive and negative halves of the input AC signal. In other words, a clipper is a
device that limits the positive amplitude or negative amplitude or both positive and negative
amplitudes of the input AC signal. In some cases, a clipper removes a small portion of the
positive half cycle or negative half cycle or both positive and negative half cycles. In the below
circuit diagram, the positive half cycles are removed by using the series positive clipper.

The clipper circuit does not contain energy storage elements such as capacitor but contains both
linear and no-linear elements. The linear elements used in the clippers include resistors and the
non-linear elements used in the clippers include diodes or transistors.

One of the basic clipping device is the half wave rectifier. A half wave rectifier removes either
the positive half cycle or negative half cycle of the input AC signal and allows the remaining half
cycle of the input AC signal. Thus, a half wave rectifier acts as a clipper circuit.

The half wave rectifier (clipper circuit) is made up of one diode and a resistor. Depending on the
orientation of the diode, either the positive or the negative half cycle is removed.

The resistor is mainly used to limit the current flowing through the diode when it is forward
biased.

The clipping (removal) of the input AC signal is done in such a way that the remaining part of
the input AC signal will not be distorted.

Clippers are often referred to as voltage limiters, current limiters, slicers, or amplitude selectors.
Clipper circuits are extensively used in digital computers, radars, television receivers, radio
receivers and other electronic systems for removing unwanted portion of the input AC signal.

Page No. 39 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Types of Clippers

The clipper circuits are generally categorized into three types: series clippers, shunt clippers and
dual (combination) Clippers.

 Series negative clipper

 Series negative clipper with bias
 Shunt positive clipper
 Shunt positive clipper with bias
 Shunt negative clipper
 Shunt negative clipper with bias
 Dual (combination) clipper

Series Positive Clipper

Series Positive Clipper with Positive bias

Page No. 40 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Series Positive Clipper with Negative bias

Series Negative Clipper

Page No. 41 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Series Negative Clipper with Positive bias

Series Negative Clipper with Negative bias

Page No. 42 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Shunt Positive Clipper

Shunt Positive Clipper with Positive bias

Shunt Positive Clipper with Negative bias

Page No. 43 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Shunt Negative Clipper

Shunt Negative Clipper with Positive bias

Shunt Negative Clipper with Negative bias

Page No. 44 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Dual (combination) clipper

OBSERVATIONS:

CASE – (1):

Basic Clipper Circuit – (1) and I/P and O/P Waveform

Page No. 45 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

CASE – (2):

Basic Clipper Circuit – (2) and I/P and O/P Waveform

CASE – (3):

Biased Clipper Circuit – (3) and I/P and O/P Waveform

Page No. 46 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

CASE – (4):

Biased Clipper Circuit – (4) and I/P and O/P Waveform

CASE – (5):

Biased Clipper Circuit – (5) : Clipping at TWO independent levels and

I/P and O/P Waveform

RESULTS: The clipper circuits have been connected as per circuit diagrams and input and
output waveforms have been plotted.
Page No. 47 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 8
AIM: To study the Full wave bridge rectifier.
OBJECTIVE: To verify the working of Full Wave Rectifiers Circuit (Bridge Rectifier) and
calculate it’s efficiency.

APPARATUS REQUIRED:
S. No. Components/Equipments Quantity Remarks
1 CRO 1
2 Multimeter 1
3 Trainer Kit 1
4 Bread Board 1
5 Connecting wires
6 Diode 4
7 Power Supply 1

Theory: -

Full Wave Bridge Rectifier – Circuit Diagram

Page No. 48 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Input and Output Waveform of Full-wave Bridge Rectifier.

WORKING:

The full wave bridge rectifier circuit contains four diodes D1 , D2,D3 and D4, connected to form a
bridge as shown in Fig(4).
The a.c. supply to be rectified is applied to the diagonally opposite ends of the bridge through the
transformer. Between other two ends of the bridge, the load resistance RL is connected.

Operation:

During the positive half-cycle of secondary voltage, the end P of the secondary winding
becomes positive and end Q negative.
This makes diodes D1 and D3 forward biased while D2 and D4 are reverse biased. Hence only
diodes D1 and D3 conducts.
These two diodes will be in series through the load RL as shown in Figure.

Fig.5

Page No. 49 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

The conventional current flows through load R L is shown by the dotted arrows. It may be seen
that current flows from A to B through the load RL.
During the negative half cycle of secondary voltage, end P becomes negative and end Q
positive.
This makes diodes D2 and D4and forward biased and diodes D1 and D3 are reverse biased. Hence
only diodes D2 and D4 conduct.
These two diodes will be in series through the load RL as shown in Figure.

The conventional current flow through load R L is shown by the solid arrows.

It may be seen that again the current flows from A to B through the load i.e. in the same direction
as for the positive half-cycle. Therefore, d.c. output is obtained across load RL.

Peak Inverse Voltage

The peak inverse voltage (PIV) of each diode is equal to the maximum secondary voltage of
transformer i.e. Vm.
Suppose during positive half cycle of input a.c., end P of secondary is positive and end Q
negative. Under such conditions, diodes D1 and D3 are forward biased while diodes D2 and D4
are reverse biased. Since the diodes are considered ideal, diodes D1 and D3 can be replaced by
wires as shown in Fig. 7 (i). This circuit is the same as shown in Figure.

From the Figure, it is clear that two reverse biased diodes (i.e., D2 and D4) and the secondary of
transformer are in parallel. Hence PIV of each diode (D2 and D4) is equal to the maximum
voltage (Vm) across the secondary.
Similarly, during the next half cycle, D2 and D4 are forward biased while D1 and D3 will be
reverse biased. It is easy to see that reverse voltage across D1 and D3 is equal to Vm.
Hence, PIV = Vm
Page No. 50 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Procedure:

1. Connect the primary of center-tapped transformer to main supply. At the output points of
full wave rectifier circuit, connect the vertical plates of CRO & by adjusting its knob, get
a stationary pattern on the screen. Now touch the CRO probes at the center tap & one of
the diodes. Observe the waves shapes on CRO compare the two wave shapes.
2. By Multimeter, measure the AC voltage at the input & output points. Also measure the
dc voltage at the output point.
3. Multiply the ac input voltage by √2 to get peak value & calculate the dc voltage by
Vdc = Vm / π, Compare this theoretical value with the practical value.

4. Calculate the ripple Factor by using formula.

5. Measure the PIV across the diode. It should be 2Vm.

Observation:- Observe the wave shape of output signal of FWR on the CRO.

Observation Table:-

SR. NO. Applied Input Voltage Observe Output Voltage Remark

Calculation:-

Ripple Factor of FWR = ac voltage at o/p / dc voltage at o/p = _______

(b) Results:

1. The output dc voltage is little less than the theoretical value.

2. There is little difference between theoretical & measured value of ripple Factor.

Page No. 51 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

EXPERIMENT 9
AIM: To study the input and output characteristics of a NPN transistor in Common Emitter
configuration.
OBJECTIVE: To obtain input resistance find VBE and IB for a constant VCE on one of the input
characteristics and output resistance find IC and VCB at a constant IB.
THEORY: The basic circuit diagram for studying input characteristics is shown in the circuit
diagram. The input is applied between base and emitter, the output is taken between collector
and emitter. Here emitter of the transistor is common to both input and output and hence the
name Common Emitter Configuration.
Input characteristics are obtained between the input current and input voltage at constant output
voltage. It is plotted between VBE and IB at constant VCE in CE configuration.
Output characteristics are obtained between the output voltage and output current at constant
input current. It is plotted between VCE and IC at constant IB in CE configuration.

APPARATUS REQUIRED:
S. No. Components/Equipments Quantity Remarks
1 Transistor BC 107 1
2 Resistors (1K , 100K ) 1
3 Dual DC Regulated Power supply (0 - 30 1
V)
4 Digital Ammeters ( 0 - 200 mA, 0 - 200 1
µA)
5 Digital Voltmeter (0 - 20V) 1
6 Connecting wires 1
7 Bread board 1

CIRCUIT DIAGRAM:

Page No. 52 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

PROCEDURE:
Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCE = 0V by varying VCC.
3. Varying VBB gradually, note down base current IB and base-emitter voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in steps of 0.1V.
Once the current starts increasing vary VBB in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V.
Output Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep emitter current IB = 20 A by varying VBB.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current IC and
Collector-Emitter Voltage (VCE).
4. Repeat above procedure (step 3) for IB = 60µA, 0µA.

Page No. 53 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

OBSERVATIONS:

Input Characteristics
VBB VCE = 0V VCE = 5V
(Volts) VBE (Volts) IB (µA) VBE (Volts) IB (µA)

Output Characteristics
VCC IB = 0 µA IB = 20 µA IB = 40 µA
(Volts) VCE (Volts) IC (mA) VCE (Volts) IC (mA) VCE (Volts) IC (mA)

GRAPH:

Page No. 54 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

1. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at a constant
VCE as a constant parameter.
2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis taking IB
as a constant parameter.

KEY PARAMETERS:
 Max Collector Current = 0.1A
 VCEO max = 50V

RESULT:
1. Calculate the ideal voltages and currents for each element in the circuit and compare
them to the measured values.
2. Compute the percentage error in the two measurements and provide a brief explanation
for the error.
3. Give the explanation regarding the error in terms of different causes etc.
4. Explain the behavior of the graph and why it is so?

PRECAUTIONS:

1. While performing the experiment do not exceed the ratings of the transistor. This may
lead to damage the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

QUESTIONS:
1. Can transistor be replaced by two back to back connected diodes?
2. For amplification CE is preferred, why?
3. What is the range β of a BJT?

Page No. 55 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Mini Project
Project – Students should be encouraged to make a working model/Project to demonstrate
any Transducer/Sensor action or any related field
 Verification of KCL and KVL in the presence of resistive circuit, resistive and
inductive circuit with AC supply source.
 Design an appropriate logic gate for a given truth table.

Page No. 56 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava
 School of Electrical, Electronics and Communication Engineering

Dos and Don’ts

 Avoid contact with energized electrical circuits.

 Powered equipment can be hot! Use caution when handling equipment after it has been
operating.
 Select proper type of supply (i.e. a. c. or d. c.) and range of meters.
 All the connections should be tight.
 Never exceed the permissible values of current, voltage, and apparatus, wire, load, etc.
 If water or a chemical is spilled onto equipment, shut off power at the main switch or
circuit breaker and unplug the equipment.
 Be sure you understand the function and wiring of an instrument before using it in a
circuit.

Page No. 57 Basic Electrical and Electronics Engineering Lab (BEC151) Prof. P.K.Srivastava