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Irfp640: DSS D DS (On)

The document summarizes the specifications and characteristics of an IRFP640 HEXFET Power MOSFET. Key details include a maximum drain-source voltage of 200V, continuous drain current rating of 18A, and on-resistance as low as 0.18 ohm. Thermal and electrical parameters are provided in tables.

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242 views2 pages

Irfp640: DSS D DS (On)

The document summarizes the specifications and characteristics of an IRFP640 HEXFET Power MOSFET. Key details include a maximum drain-source voltage of 200V, continuous drain current rating of 18A, and on-resistance as low as 0.18 ohm. Thermal and electrical parameters are provided in tables.

Uploaded by

dennis ovich
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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IRFP640

®
HEXFET Power MOSFET

Dynamic dv/dt Rating


Repetitive Avalanche Rated VDSS = 200V
Fast switching
Ease of Paralleling ID = 18A
Simple Drive Requirements
RDS(ON) =0.18Ω
Description
Third Generation HEXFETs from International Rectifier
www.DataSheet4U.com
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.

The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation Pin1–Gate

levels to approximately 50watts. The low thermal Pin2–Drain

resistance and low package cost of the TO-220 Pin3–Source

contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings


Parameter Max. Units
ID@TC=25 ْC Continuous Drain Current, VGS@10V 18
ID@TC=100ْC Continuous Drain Current, VGS@10V 11 A
IDM Pulsed Drain Current ① 72
PD@TC=25ْC Power Dissipation 125 W
Linear Derating Factor 1.0 W/ ْC
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ② 580 mJ
IAR Avalanche Current ① 18 A
EAR Repetitive Avalanche Energy ① 13 mJ
dv/dt Peak Diode Recovery dv/dt ③ 5.0 V/ns
TJ Operating Junction and
–55 to +150
TSTG Storage Temperature Range ْC
Soldering Temperature, for 10 seconds 300(1.6mm from case)
Mounting Torque,6-32 or M3 screw 10 Ibf●in(1.1N●m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-case — — 1.0
RθCS Case-to-Sink, Flat, Greased Surface — 0.50 — ْC/W
RθJA Junction-to-Ambient — — 62
IRFP640
®
HEXFET Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 — — V VGS=0V,ID=250uA
△V(BR)DSS/
Breakdown Voltage Temp. Coefficient — 0.29 — V/ْC Reference to 25ْC,ID=1mA
△TJ
RDS(on) Static Drain-to-Source On-resistance — — 0.18 Ω VGS=10V,ID=11A ④

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS, ID=250μA


gfs Forward Transconductance 6.7 — — S VDS=50V,ID=11A ④

www.DataSheet4U.com — — 25 VDS=200V,VGS=0V
IDSS Drain-to-Source Leakage current μA
— — 250 VDS=160V,VGS=0V,TJ=125ْC
Gate-to-Source Forward leakage — — 100 VGS=20V
IGSS nA
Gate-to-Source Reverse leakage — — -100 VGS=-20V
Qg Total Gate Charge — — 70 ID=18A
Qgs Gate-to-Source charge — — 13 nC VDS=160V
Qgd Gate-to-Drain("Miller") charge — — 39 VGS=10V See Fig.6 and 13④
td(on) Turn-on Delay Time — 14 — VDD=100V
tr Rise Time — 51 — ID=18A
nS
td(off) Turn-Off Delay Time — 45 — RG=9.1Ω
tf Fall Time — 36 — RD=5.4Ω See Figure 10④
Between lead,
LD Internal Drain Inductance — 4.5 — 6mm(0.25in.)
nH from package
and center of
LS Internal Source Inductance — 7.5 —
die contact
Ciss Input Capacitance — 1300 — VGS=0V
Coss Output Capacitance — 430 — pF VDS=25V
Crss Reverse Transfer Capacitance — 130 — f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Continuous Source Current . MOSFET symbol
IS — — 18
(Body Diode) showing the
A
Pulsed Source Current . integral reverse
ISM — — 72
(Body Diode) ① p-n junction diode.
VSD Diode Forward Voltage — — 2.0 V TJ=25ْC,IS=18A,VGS=0V ④
trr Reverse Recovery Time — 300 610 nS TJ=25ْC,IF=18A
Qrr Reverse Recovery Charge — 3.4 7.1 μC di/dt=100A/μs ④
ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by ③ISD≤18A,di/dt≤120A/μS,VDD≤V(BR)DSS,
max. junction temperature(see figure 11) TJ≤150 ْC
② VDD=50V ,starting TJ=25 ْC ,L=4.6mH ④Pulse width≤300μS; duty cycle≤2%.
RG=25Ω，IAS=18A(see Figure 12)

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