Scribd
Upload
218 views1 page

Emerging Domain in Electronics-2 2020-21

This document contains a sessional exam for a class on emerging domains in electronics engineering. It has three sections: Section A contains 5 short answer questions worth 2 marks each on JFETs, MOSFETs, LEDs, and photodiodes. Section B has 2 long answer questions worth 5 marks each on JFET characteristics and op-amps. Section C is a single long answer question worth 10 marks on either enhancement MOSFETs or op-amp terms. Students must answer all questions in Section A, two from Section B, and one from Section C.

Uploaded by

Sanjay Sharma
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
218 views1 page

Emerging Domain in Electronics-2 2020-21

This document contains a sessional exam for a class on emerging domains in electronics engineering. It has three sections: Section A contains 5 short answer questions worth 2 marks each on JFETs, MOSFETs, LEDs, and photodiodes. Section B has 2 long answer questions worth 5 marks each on JFET characteristics and op-amps. Section C is a single long answer question worth 10 marks on either enhancement MOSFETs or op-amp terms. Students must answer all questions in Section A, two from Section B, and one from Section C.

Uploaded by

Sanjay Sharma
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 1

MAHATMA GANDHI MISSION’S

COLLEGE OF ENGINEERING & TECHNOLOGY


A-09, SECTOR-62, NOIDA (U.P.)
DEPARTMENT OF APPLIED SCIENCES (FIRST YEAR)
Sessional Exam-II (2020-21)
Subject code: KEC-101T
Class: FT 2 (I Sem) Subject: Emerging Domain in Electronics Engg. Max Marks: 30 Duration: 1Hr

Section A:-Attempt all Questions (5 *2marks):-

1. Explain the drain and transfer characteristics of JFET with neat circuit diagram.
2. For an N-channel JFET, if IDSS= 8 mA and VP= -5 V, calculate ID at VGS= -3 V and VGS at ID= 3 mA.
3. What is MOSFET? Explain D-MOSFET and E-MOSFET transfer characteristics.
4. Explain the principle of operation of a light-emitting diode (LED) and mention its applications.
5. Explain V-I characteristics of photodiode and its operation.

Section B:-Attempt Any two Question (2*5 marks):-

1. Explain the construction, working and characteristics of N-channel JFET.


2. With a neat circuit diagram, show how an op-amp can be used as an integrator & as a
differentiator. Derive the expression for output voltage.
3. A non-inverting Op-amplifier circuit has an input resistance of 10 k Ω and feedback resistance
60 k Ω with load resistance of 47 k Ω. Draw the circuit. Calculate the output voltage, voltage
gain, load current when the input voltage is 1.5 V.

Section C:-Attempt Any One Question (10*1 marks):-

1. Explain the construction and working of N-channel enhancement type MOSFET. For E-
MOSFET, determine the value of ID, if ID(ON)= 4 m A, VGS(ON)= 6 V, VT= 4 V and VGS= 8 V.

2. Explain the following terms related to op-amp:


(i) Common mode gain & CMRR
(ii) Maximum Output Voltage Swing
(iii) Input Offset Voltage & Offset Current
(iv) Input impedance & Output impedance
(v) Slew rate & Virtual ground.

You might also like