8PIN DIP IGBT/MOSFET

2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Features:

• Guaranteed performance from -40 to 100 ℃

• Peak Output Current : IOP = ±2.5A (max)
• Threshold Input Current: IFLH = 5 mA (max)
• Common mode transient immunity : 15kV/ ± μs （min）
• High isolation voltage between input
and output (Viso=5000 V rms )
• Pb free and RoHS compliant.
• cUL approved (E214129)
• VDE approved (40028391)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved

Schematic
Description

The EL3120 consists of an infrared light emitting diodes and

integrated high gain, high-speed photo detectors. The device is
housed in a 8 pin DIP package.
The photo detector has an internal shield that provides a
guaranteed common-mode transient immunity of ±15 kV/µs. It is
suitable for direct gate driving circuit for IGBTs or power
MOSFETs.

Applications

Pin Configuration
• Isolated IGBT/Power MOSFET gate drive
• Industrial Inverter 1, NC
• AC brushless and DC motor drives 2, Anode
3, Cathode
• Inverter for home appliances
4, NC
5, VEE
6, VO2
Truth Table 7, VO1
8, VCC

Input VCC-VEE VCC-VEE Output

Positive Going Negative Going
L 0 to 30 V 0 to 30V L
H 0 to 11.5V 0 to 10V L
H 11.5 to 13.5V 10 to 12V Transition
H 13.5 to 30V 12 to 30V H

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Absolute Maximum Ratings (TA=25°C)

Parameter Symbol Rating Unit

Forward current IF 25 mA
1
Input Pulse Forward Current* IFP 1 A

Reverse voltage VR 5 V
2
“H” Peak Output current* IOPH 3 A
2
“L” Peak Output Current* IOPL 3 A

Output Pear Output Voltage VO 35 V

Supply Voltage VCC- VEE 0 to 35 V

Power Dissipation PC 250 mW

3
Operating frequency* f 50 kHz
*4
Isolation voltage VISO 5000 V rms

Total Power Dissipation PT 300 mW

Operating temperature TOPR -40 ~ +100 °C

Storage temperature TSTG -55 ~ +125 °C

*5
Soldering temperature TSOL 260 °C

Notes
*1 Pulse width ≤ 1 μs, 300pps.
*2 Max. pulse width=10us, max. duty cycle =1.1%

*3 Exponential waveform pulse width PW ≤ 0.3us, IOPH≥-2.5A, IOPL≤2.5A,

*4 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 to 4 are shorted together, and pins 5 to 8 are shorted
together.

*5 For 10 seconds.

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Electrical Characteristics
Apply over all recommended condition, typical value is measured at VCC=30V, VEE= ground, TA=25°C unless
specified otherwise.
Input
Parameter Symbol Min. Typ.* Max. Unit Condition

Forward voltage VF - 1.4 1.8 V IF = 10mA

Reverse voltage VR 5.0 - - V IR = 10µA

Temperature coefficient of
∆VF/∆TA - -1.9 - mV/°C IF =10mA
forward voltage
Input capacitance CIN - 60 - pF VF=0, f=1MHz

Output
Parameter Symbol Min. Typ.* Max. Unit Condition

High level supply current ICCH - 1.65 3.8 IF=7 to 10mA, VO= Open
mA
Low level supply current ICCL - 1.55 3.8 VF=0 to 0.8V, VO= Open

Transfer Characteristics
Parameter Symbol Min. Typ.* Max. Unit Condition

6
-1 - - VO=VCC-3V
High Level Output Current* IOH A
-2 - - VO=VCC-6V

6
1 - - VO=VEE +3V
Low Level Output Current* IOL A
2 - - VO=VEE +6V
VCC-6.25 - - IF=10mA, IO=-2.5A
High Level Output Voltage VOH
VCC-0.25 - - IF=10mA, IO=-100mA
V
- - VEE+6.25 IF=0mA, IO=2.5A
Low Level Output Voltage VOL
- - VEE+0.25 IF=0mA, IO=100mA

Input Threshold Current IFLH - 2.3 5 mA IO=0mA, VO >5V

Input Threshold Voltage VFHL 0.8 - - V IO=0mA,, VO <5V

Under Voltage Lockout

VUVLO+ 11.5 - 13.5 V IF=10mA,, VO >5V
Threshold
Under Voltage Lockout
VUVLO- 10.0 - 12.0 V IF=10mA,, VO <5V
Threshold

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Switching Characteristics
Apply over all recommended condition, typical value is measured at VCC=30V, VEE= ground, TA=25°C unless
specified otherwise.
Parameter Symbol Min. Typ.* Max. Unit Condition

Propagation delay time to IF= 7 to 16mA

output High level tPLH 150 200 300 ns CL = 10nF, RL=10Ω,
f=10kHz, Duty=50%,
Propagation delay time to TA=25°C
output Low level tPHL 120 170 300 ns

Pulse width distortion |tPHL – tPLH| - 30 100 ns

7
Propagation Delay Skew* tPSK - - 40 ns

Output rise time

tr - 60 - ns

Output fall time

tf - 60 - ns

UVLO Turn on Delay tUVLO ON 30 us IF=10mA, VO>5V

UVLO Turn off Delay tUVLO OFF 0.4 us IF=10mA, VO<5V
IF = 7 to 16mA ,
Common Mode Transient
8 CMH -15 - - kV/µS VCC=30V, RL=350Ω,
Immunity at Logic High*
TA=25°C VCM=2kV
VF = 0V , VCC=30V,
Common Mode Transient
9 CML 15 - - kV/µS RL=350Ω, TA=25°C
Immunity at Logic Low*
VCM=2kV

Notes:
*6 Max. pulse width=10us, max. duty cycle =1.1%
*7 Propagation delay skew is defined as the difference between the largest and smallest propagation delay times (i.e. tPHL or
tPLH) of multiple samples. Evaluations of these samples are conducted under identical test conditions (supply voltage,
input current, temperature, etc).
*8 Common mode transient immunity at output high is the maximum tolerable negative dv/dt on the trailing edge of the
common mode impulse signal, VCM, to assure that the output will remain high (i.e. VO>15.0V)
*9 Common mode transient immunity at output low is the maximum tolerable positive dv/dt on the leading edge of the
common mode pulse signal, VCM, to assure that the output will remain low (i.e. VO<1.0V)

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Test Circuit

IOL Test Circuit

IOH Test Circuit

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

VOH Test Circuit VOL Test Circuit

ICCH Test Circuit ICCL Test Circuit

IFLH Test Circuit VFHL Test Circuit

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER
DR PHOTOCOUPLER
OTOCOUPLER EL3120

UVLO Test Circuit

tPHL, tPLH, tr and tf Test Circuit and Waveforms

CMR Test Circuit and Waveforms

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Typical Performance Curves

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Everlight Electronics Co., Ltd. 9 http://www.everlight.com

：
Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Order Information

Part Number

EL3120Y(Z)-V
Note
Y = Lead form option (S, M or none)
Z = Tape and reel option (TA, TB or none).
V = VDE (optional)

Option Description Packing quantity

None Standard 45 units per tube
M Wide lead bend (0.4 inch spacing) 45 units per tube
(TA) Surface mount lead form + TA tape & reel option 1000 units per reel
(TB) Surface mount lead form + TB tape & reel option 1000 units per reel

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Package Drawing
(Dimensions in mm)
Standard DIP Type

Option M Type

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Option S Type

Recommended pad layout for surface mount leadform

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Device Marking

EL
3120
YWWV

Notes

3120 denotes Device Number

Y denotes 1 digit Year code
WW denotes 2 digit Week code
V denotes VDE (optional)

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Tape & Reel Packing Specifications

Option TA Option TB

Direction of feed from reel Direction of feed from reel

Tape dimensions

Dimension No. A B Do D1 E F

Dimension(mm) 10.4±0.1 10.0±0.1 1.5±0.1 1.5±0.1 1.75±0.1 7.5±0.1

Dimension No. Po P1 P2 t W K

16.0+0.3/
Dimension(mm) 4.0±0.1 12.0±0.1 2.0±0.1 0.4±0.1 4.5±0.1
-0.1

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

Solder Reflow Temperature Profile

260 °C (peak,10 Sec Max)

>255 °C ( 30s Max )

217°°

200°° 1-3 °C/Sec 60 – 100 Sec

150°°

60 – 120 Sec

1-3 °C/Sec

TIME (S)

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Document No DPC-0000158 Rev. 4 Nov 14, 2012
8PIN DIP IGBT/MOSFET
2.5A Output Current GATE DRIVER PHOTOCOUPLER EL3120

DISCLAIMER

1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change
for above specification.

2. When using this product, please observe the absolute maximum ratings and the instructions for using

outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting

from use of the product which does not comply with the absolute maximum ratings and the instructions

included in these specification sheets.

3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please
don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.

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Document No DPC-0000158 Rev. 4 Nov 14, 2012