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Course Objective: To Design Microwave Amplifier

1. The document outlines the course objectives and various topics related to designing microwave amplifiers including stability criteria, noise figure, power gain, transducer gain, and matching networks. 2. Specific problems are provided relating to designing low noise amplifiers and power amplifiers using S-parameter data for various transistors at different frequencies to meet requirements for gain, noise figure, and stability. 3. Design techniques like constant gain circles and noise figure circles are to be used along with open or short circuited stub matching networks on the Smith chart.

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Ashwini Kothavale
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98 views

Course Objective: To Design Microwave Amplifier

1. The document outlines the course objectives and various topics related to designing microwave amplifiers including stability criteria, noise figure, power gain, transducer gain, and matching networks. 2. Specific problems are provided relating to designing low noise amplifiers and power amplifiers using S-parameter data for various transistors at different frequencies to meet requirements for gain, noise figure, and stability. 3. Design techniques like constant gain circles and noise figure circles are to be used along with open or short circuited stub matching networks on the Smith chart.

Uploaded by

Ashwini Kothavale
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Course Objective: To design Microwave amplifier

1. Explain in detail Stability Criteria for microwave amplifier

2. A GaAs FET has following S- parameters and noise parameters at 1GHz. (Z0=50Ω),
S11 = 0.61∠-155˚, S12 = 0, S21 = 5.0 ∠180 ˚, S22= 0.51∠-20˚. Fmin = 3dB, Γopt =
0.45∠180˚.,Rn = 4Ω. Design a low noise amplifier for noise figure of 3.5dB and gain
of 16 dB.

3. Derive the traducer power gain as

4. What is unilateral figure of merit of an amplifier

5. A BJT with Ic = 30mA and VCE=10V is operated at a frequency of 1GHz in 50Ω


system . Its S- parameters are
S11 = 0.73∠175˚ , S12 = 0, S21 = 4.45∠ 65 ˚ , S22 = 0.21∠−80 ˚
Determine whether the transistor is unconditionally stable . if yes calculate the
optimum terminations GS max, GL max, GTU max

6. Determine stability of Ga As FET that has following S parameters at 2GHz in a 50Ω


system both graphically and mathematically

S= [ 0.89∠−60
3.1∠123 ˚
˚ 0.02∠ 62 ˚
0.78∠−27 ˚ ]
7. A GaAs FET is biased for minimum noise figure and has the following S parameters
and noise parameters at 4GHz (Z0 = 50Ω)
0.6 ∠−60˚ 0.05∠ 26 ˚
S= [ 1.9∠ 81˚ 0.5 ∠−60 ˚ ]
Fmin = 1.6dB, Γopt = 0.62∠ 100 ˚, Rn = 20Ω
Design an amplifier with 2dB noise figure and maximum gain compatible with this
noise figure . Assume device is unilateral.

8. Design an amplifier to have again of 10dB at a 6GHz using transistor with the
following S parameters ( Z0 = 50Ω)
S11 = 0.61∠−170˚ , S12 = 0 ,S21 =2.24∠ 32 ˚ , S22 = 0.72∠−83 ˚
Plot Constant gain circles for Gs = 1dB, and GL = 2dB . Use matching sections with
open circuited shunt stubs.

9. A GaAs FET has the following S parameters and noise parameters 1GHz (Z0 = 50Ω)
S11 = 0.7∠-155˚ , S12 = 0, S21 = 5.0∠ 180 ˚ , S22 = 0.51∠−20 ˚
Fmin = 3dB, Γopt = 0.45∠ 180 ˚, Rn = 4Ω. Design a low noise amplifier for a noise
figure of 3.5dB and power gain of 16dB
10. Consider the amplifier circuit shown below the

The input and output matching networks are to be designed using open circuited stubs
for ΓS = 0.5 ∠ 120 ˚ and ΓL = 0.4∠ 90 ˚. Use Smith chart .

11. If the transistor has following S parameters at 5GHz with 50Ω impedance
S11 = 0.6∠−175˚ S12 = 0.02∠ 20 ˚
S21 = 2.2∠ 35 ˚ S22 = 0.6∠−95 ˚
Determine the stability criteria and plot the stability circles

12. Derive following parameters of an amplifier


(1) Power Gain G
(2) Available Gain GA
(3) Transducer Gain GT

13. A BJT has a following S parameters


S11 = 0.65∠−95 ˚ S12 = 0.035∠ 40 ˚
S21 = 5.0∠ 115 ˚ S22 = 0.8∠−35 ˚
Is this transistor unconditionally stable ? Draw input and output stability circle

14. Define the Figure of Merit in unilateral microwave amplifiers. If . unilateral gain of
the microwave amplifier is

show that

where GT is the transducer gain and , GTU is transducer


gain in unilateral case.
15. A BJT has the following S-parameters as a function of four' frequencies. Determine in
which of these cases, device is unconditionally stable, and of these, which has the
greatest stability.
16. 2 Design an amplifier for maximum gain at 4 GHz using single stub matching section.
Calculate and plot the input return loss and gain from 3 to 5 GHz. Plot stability circles
on smith chart. The GaAs FET has the fo11owmg. S parameters, Z0=50Ω

17. What are the characteristics of power amplifier

18. Compare microwave amplifiers with microwave oscillators

19. A BJT with Ic = 30mA and VCE=10V is operated at a frequency of 1GHz in 50Ω
system . Its S- parameters are
S11 = 0.73∠175˚ , S12 = 0, S21 = 4.45∠ 65 ˚ , S22 = 0.21∠−89 ˚
Determine whether the transistor is unconditionally stable . if yes calculate the
optimum terminations GS max, GL max, GTU max

20. A MESFET is biased for large signal class A operation with the following small
signal s parameters at 5GHz
S11 = 0.55∠−150° S12 = 0.04∠ 20 °
S21 = 3.5∠ 170 ° S22 = 0.45∠30
The large signal S21 = 2.8∠180°
Design a large signal class A amplifier with max transducer gain in 50Ω system

21. Explain 1dB compression point


22. A certain GaAs MESFET has following noise figure parameter measured at Vds = 50,
Ids = 20mA , with 50Ω resistance for frequency of 9GHz
Fmin = 4dB, Γopt = 0.55∠175 ,R0 = 4Ω
Plot noise figure circles for given values of f1 at 2,2.5,3.5,4.5 dB

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