Transistors

2SA1310
Silicon PNP epitaxial planar type

For low-frequency and low-noise amplification Unit: mm

Complementary to 2SC3312 4.0±0.2 2.0±0.2

3.0±0.2
(0.8)
■ Features

7.6
0.75 max.

(0.8)
• Allowing supply with the radial taping
• Low noise voltage NV
• High forward current transfer ratio hFE

15.6±0.5
• Optimum for high-density mounting

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit 0.45+0.20
–0.10

(2.5) (2.5) 0.45+0.20

–0.10
Collector-base voltage (Emitter open) VCBO −60 V
0.7±0.1
Collector-emitter voltage (Base open) VCEO −55 V
1 : Emitter
Emitter-base voltage (Collector open) VEBO −7 V 2 : Collector
1 2 3
3 : Base
Collector current IC −100 mA
NS-B1 Package
Peak collector current ICP −200 mA
Collector power dissipation PC 300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −55 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V
Base-emitter voltage VBE VCE = −1 V, IC = −30 mA −1 V
Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −1 µA
Forward current transfer ratio * hFE VCE = −5 V, IC = −2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.6 V
Transition frequency fT VCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz
Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB 150 mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700

Publication date: March 2003 SJC00017BED 1

 2SA1310

PC  Ta IC  VCE IC  VBE
500 −100 −120
Ta = 25°C VCE = −5 V
Collector power dissipation PC (mW)

25°C
−100
400 −80 Ta = 75°C −25°C

Collector current IC (mA)

Collector current IC (mA)

IB = −200 µA −80
300 −60
−180 µA
−160 µA
−60
−140 µA
−120 µA
200 −40
−100 µA
−40
−80 µA
−60 µA
100 −20
−40 µA −20
−20 µA

0 0 0
0 40 80 120 160 0 −2 −4 −6 −8 −10 −12 0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)

VCE(sat)  IC hFE  IC fT  I E
−100 600 320
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = −5 V VCB = −5 V
Ta = 25°C
500
Forward current transfer ratio hFE

Transition frequency fT (MHz)

−10 Ta = 75°C 240
400
25°C

−1 300 −25°C 160

Ta = 75°C
200
25°C
− 0.1 80
−25°C 100

− 0.01 0 0
− 0.1 −1 −10 −100 − 0.1 −1 −10 −100 0.1 1 10 100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob  VCB NV  IC
10 120
C (pF)

IE = 0 VCE = −10 V
f = 1 MHz GV = 80 dB
Function = FLAT
(Common base, input open circuited) ob

Ta = 25°C
100
8
Noise voltage NV (mV)

80
6
Collector output capacitance

Rg = 100 kΩ
60

4 22 kΩ
40
5 kΩ
2
20

0 0
−1 −10 −100 − 0.01 − 0.1 −1
Collector-base voltage VCB (V) Collector current IC (mA)

2 SJC00017BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.