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Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SA1671 silicon PNP power transistor from Inchange Semiconductor. It is housed in a TO-3PML package and is intended for audio and general purpose applications. The specifications include absolute maximum ratings, typical characteristics like current gain and transition frequency, and a diagram of the package outline. It complements another transistor, the 2SC4386.

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50 views3 pages

Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

This document provides product specifications for the 2SA1671 silicon PNP power transistor from Inchange Semiconductor. It is housed in a TO-3PML package and is intended for audio and general purpose applications. The specifications include absolute maximum ratings, typical characteristics like current gain and transition frequency, and a diagram of the package outline. It complements another transistor, the 2SC4386.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1671

DESCRIPTION ·
·With TO-3PML package
·Complement to type 2SC4386

APPLICATIONS
·Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base

2 Collector

Fig.1 simplified outline (TO-3PML) and symbol


3 Emitter

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -120 V

VCEO Collector-emitter voltage Open base -120 V

VEBO Emitter-base voltage Open collector -6 V

IC Collector current -8 A

IB B Base current -3 A

PC Collector power dissipation TC=25℃ 75 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1671

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -120 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A


B -0.5 V

ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA

IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA

hFE DC current gain IC=-3A ; VCE=-4V 50 180

fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz

‹ hFE classifications

O P Y

50-100 70-140 90-180

2
Inchange Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1671

PACKAGE OUTLINE

Fig.2 Outline dimensions

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