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    Power Transistor (60V, 3A) : Transistors

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    vali2daduica
    This document provides specifications for the 2SD2394 power transistor. 1) It is a 60V, 3A transistor with low saturation voltage of 0.3V and excellent DC current gain characteristics. 2) It has a wide safe operating area and TO-220FN packaging. 3) Key electrical characteristics include a collector-base breakdown voltage of 80V, collector current of 3A, and DC current transfer ratio of 100 to 320.

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    Power Transistor (60V, 3A) : Transistors

    Uploaded by

    vali2daduica
    14 views1 page
    This document provides specifications for the 2SD2394 power transistor. 1) It is a 60V, 3A transistor with low saturation voltage of 0.3V and excellent DC current gain characteristics. 2) It has a wide safe operating area and TO-220FN packaging. 3) Key electrical characteristics include a collector-base breakdown voltage of 80V, collector current of 3A, and DC current transfer ratio of 100 to 320.

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    2SD2394

    Original Title

    2SD2394

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    This document provides specifications for the 2SD2394 power transistor. 1) It is a 60V, 3A transistor with low saturation voltage of 0.3V and excellent DC current gain characteristics. 2) It has a wide safe operating area and TO-220FN packaging. 3) Key electrical characteristics include a collector-base breakdown voltage of 80V, collector current of 3A, and DC current transfer ratio of 100 to 320.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views1 page

    Power Transistor (60V, 3A) : Transistors

    Uploaded by

    vali2daduica
    This document provides specifications for the 2SD2394 power transistor. 1) It is a 60V, 3A transistor with low saturation voltage of 0.3V and excellent DC current gain characteristics. 2) It has a wide safe operating area and TO-220FN packaging. 3) Key electrical characteristics include a collector-base breakdown voltage of 80V, collector current of 3A, and DC current transfer ratio of 100 to 320.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2SD2394

    Transistors

    Power Transistor (60V, 3A)


    2SD2394

    !Features !External dimensions (Units : mm)


    1) Low saturation voltage.
    (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5

    2) Excellent DC current gain characteristics. φ 3.2 2.8

    3) Wide SOA (safe operating area).

    15.0
    12.0
    8.0
    1.2

    5.0
    1.3

    14.0
    0.8

    2.54 2.54 0.75 2.6 (1) Base(Gate)


    (1) (2) (3)
    (2) Collector(Drain)
    (1) (2) (3) (3) Emitter(Source)

    ROHM : TO-220FN

    !Absolute maximum ratings (Ta = 25°C)


    Parameter Symbol Limits Unit
    Collector-base voltage VCBO 80 V
    Collector-emitter voltage VCEO 60 V
    Emitter-base voltage VEBO 7 V
    IC 3 A(DC)
    Collector current
    ICP 6 A(Pulse) ∗
    2 W
    Collector power dissipation PC
    25 W(Tc=25°C)
    Junction temperature Tj 150 °C
    Storage temperature Tstg − 55 ∼ +150 °C
    ∗ Single pulse, Pw=100ms

    !Packaging specifications and hFE


    Type 2SD2394
    Package TO-220FN
    hFE EF
    Code −
    Basic ordering unit (pieces) 500

    !Electrical characteristics (Ta = 25°C)


    Parameter Symbol Min. Typ. Max. Unit Conditions
    Collector-base breakdown voltage BVCBO 80 − − V IC = 50µA
    Collector-emitter breakdown voltage BVCEO 60 − − V IC = 1mA
    Emitter-base breakdown voltage BVEBO 7 − − V IE = 50µA
    Collector cutoff current ICBO − − 10 µA VCB = 60V
    Emitter cutoff current IEBO − − 10 µA VEB = 7V
    VCE(sat) − − 1 V
    Collector-emitter saturation voltage IC/IB = 2A/0.2A
    VCE(sat) − − 0.8 V
    Base-emitter saturation voltage VBE(sat) − − 1.5 V IC/IB = 2A/0.2A ∗
    DC current transfer ratio hFE 100 − 320 − VCE/IC = 5V/0.5A
    Transition frequency fT − 8 − MHz VCE = 5V , IE = −0.5A , f = 5MHz
    Output capacitance Cob − 35 − pF VCB = 10V , IE = 0A , f = 1MHz ∗
    ∗ Measured using pulse current.

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