BENE2133

ANALOG ELECTRONICS

DESIGN AND ANALYSIS BJT

COMMON EMITTER UNBYPASSED BIAS CONFIGURATION

NAME NO. MATRICS

ALIF SAIFUDDIN BIN SAIFUL BAHRIN B022010181

AMIRUL ‘ADIE SYAHMIE BIN ROSMIRA B022010215

NUR AIDIL BIN NORAZMI B022010198

NUR AIN ATIRAH BINTI REJAB B022010217

SITI NUR ATHIRAH BINTI NOORDIN SALEEM B022010223

1. Table of content 1

2. Introduction 2-3

3. Theorical background 3-4

4. Result 5-32

5. Discussion 33-35

6. Conclusion 36

7. Reference 37

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TITLE:

Design and Analysis BJT – Common Emitter unbypassed bias configuration

OBJECTIVE:

1. To measure the resistor, current, capacitor and power gains of the CE amplifier

2. To measure the input and output impedance of the CE amplifier

EQUIPMENT:

1. Multisim 14.1

ABSTRACT

By functioning as a switch and amplifier, the bipolar junction transistors opened the

doors for the manufacturing and design of inexpensive and lightweight electronic devices that

humanity use now every day. One of them is a common emitter amplifier. This report attempts

to characterize the common emitter amplifier circuit by explaining the theoretical basis and

simulating the circuit in the Multisim 14.1, which is followed by the manufacturing of the

circuit on the multisim 14.1 to do a simulation and comparing the expectations with the

calculation.

INTRODUCTION

The bipolar junction transistor was firstly invented in 1948 and revolutionized the world

of electronics [1]. Having an ability to act as a switch and amplifier, the bipolar junction

transistors has revolutionized the design of today’s electronics. One example of it is a common

emitter amplifier, which is as a very useful and simple type of transistor circuit. The type

transistor that use in common emitter unbypassed is NPN type. As the Bipolar Transistor is a

three-terminal device, there are basically three possible ways to connect it within an electronic

circuit with one terminal being common to both the input and output. In the Common Emitter

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or grounded emitter configuration, the input is between base, while the output is taken from

between the collector and therefore the emitter as shown. this sort of configuration is that the

most usually used circuit for transistor-based amplifiers and which represents the "normal"

method of bipolar transistor connection [2]. The common emitter amplifier configuration

produces highest current and power gain between the others configuration which is common

collector configuration and common base configuration. this is often mainly because the input

impedance is LOW because it is connected to a forward-biased PN-junction, while the output

impedance is HIGH because it is taken from a reverse-biased PN-junction.

THEORITICAL BACKGROUND

A common emitter amplifier unbypassed employs a NPN transistor to produce a

magnified version of an input signal [3]. Figure 1 represents circuit schematics where there are

resistors (Rc, Rb, Re), capacitors (C1, C2, Cbc Cwi, Cbe and Cce), BJT input signal source

(Vcc). A common emitter amplifier unbypassed causes two AC voltage drops one is between

the base and emitter, and the other is across RE [4], the AC signal on the base is in phase with

the AC signal on the emitter. This reduces the AC signal between the base and the emitter, thus

reducing the gain of the amplifier.

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 Figure 1. The common emitter unbypassed schematics.

The calculations to find the resistor value RC, RB, and RE, gain and impedance are as

follows:

RC:

Vcc - VRC – VCE – VRE = 0

Gain:

AV = -(RC/RE)

RB:

VCC – VRB – VBE -VRE = 0

re:

26m/IE

Impedence;

Zi = R ll ZB

Zo = RC

AV = - (RC/RE)

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RESULT
Justification on the electronic components used in the design

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BJT- Common Emitter unbypassed design and DC analysis when RE=540Ω

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AC analysis for Common Emitter unbypassed when RE=540Ω

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Frequency response of Common Emitter unbypassed when RE=540Ω

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Graph 1: Bode graph of an BJT amplifier for RE=540Ω

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Multisim Simulation of Common Emitter unbypassed when RE=540Ω

Figure 1: DC analysis simulation when RE=540Ω

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Figure 2: Input and output value analysis using probe when RE=540Ω

Figure 3: Input and Output waveform on oscilloscope simulation

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Figure 4: Frequency response when RE=540Ω using multisim

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BJT- Common Emitter unbypassed design and DC analysis when RE=600Ω

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AC analysis for Common Emitter unbypassed when RE=600Ω

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Frequency response of Common Emitter unbypassed when RE=600Ω

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Graph 2: Bode graph of an BJT amplifier for RE=600Ω

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Multisim Simulation of Common Emitter unbypassed when RE=600Ω

Figure 5: DC analysis simulation when RE=600Ω

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Figure 6: Input and output value analysis using probe when RE=600Ω

Figure 7: Input and Output waveform on oscilloscope simulation

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Figure 8: Frequency response when RE=600Ω using multisim

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DISCUSSION

In a common-emitter configuration, the output signal is taken off the collector

that has a resistor to Vcc and the emitter resistor is bypassed by a capacitor so that the emitter

is at AC ground but has some DC bias [5]. However, if the bypass capacitor is removed, there

will be negative feedback to the base-emitter input signal, and this reduce the gain of the

amplifier stage. Task 1 is required to design BJT Common Emitter unbypassed with given

value of Av and Frequency. Coupling capacitor is used to prevent interference of a transistor’s

bias voltage by AC signals. The circuit consist of RB, RE and RC which will be analysed in

the Dc analysis and Ac analysis. The given value is Av=-4, fs=78Hz, fc=320Hz, Cbc=30pF,

Cbc=8pF, Cce=4pF, Cwi=4pF and Cwo=10pF. During the project, the analysis was calculated

by two methods, theoretically and by software which is Multisim software to measure the

voltage, current, power gains of the CE amplifier and to measure the input and output

impedance of the CE amplifier.

The first analysis is DC analysis which is a common-emitter amplifier circuit and begins

with determining the dc bias values and then removing coupling capacitors, the load resistor,

and the signal source to produce a dc equivalent circuit by applying Thevenin’s theorem and

Kirchoff’s voltage law. By designing CE current loop and applying the Kirchoff’s voltage law

to the circuit. To find the RC value, the basic formula KVL of Vcc-VRE-VCE-VRE=0 is

elaborate to form an equation of Ic= Vcc-VCE/RC+RE and by assuming the value of

RE=540Ω. With the given value of Vcc, VCE and Ic, the value of RC can be obtained which

is 2.16kΩ. With the value of RC, the value of voltage gain can be calculated with Av=-(RC/RE)

and get -4. The calculation is repeated with the different value of RE to create different calue

of voltage gain. The analysis then is compared with the different calculated value of RE which

is 600Ω. This resulting in the value of RC is decreasing to 2.1kΩ which is affect the value of

Av to -3.5. next is to find the value of RB by designing the circuit with RB with RE. The KVL

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of Vcc-VRB-VBE-VRE=0 is elaborate to form an equation of IB= Vcc-VCE/RB+(β+1)RE. by

substitute all the given value, the value of RB can be find which is 163.72kΩ when the value

of RE is 540Ω. The calculation is repeated with the 600Ω value of re and resulting in the

decreasing value of RB which is 159.16kΩ.

The first step for AC analysis is to create an AC equivalent model of CE amplifier by

replacing all capacitors by short circuits, inductors by open circuits, dc voltage sources by

ground connections and dc current sources by open circuits. The input impedance for

RE=540Ω can be calculated with RB parallel with Zb which Zb can be find by substituting the

value of β, re and RE into Zb= β(re+RE). The value of Zi for RE=540Ω is 32.58kΩ. The

equation then is substituted with the different value of RE=600Ω into the Zb= β(re+RE). this

resulting the ZI increase to 35.20kΩ. As Zo is determined by setting Vi to zero, Ib=0 and βIb

can be replaced by open circuit equivalent and will form an equation of Zo=RC. Both values

then can be used to find for the voltage gain, Av= -(RC/RE) is used because Zb≈βRE. The

result show for RE=540Ω is -4 and for RE=600Ω is -3.5. The negative is because the voltage

drop across Rc increases but were interested in the voltage from the collector to ground which

is “beneath” Rc. As a result, an increase in Vrc causes a decrease in Vc. This is because the

effect when bypass capacitor is removed is the voltage gain and current gain will decrease.

A Bode plot indicates the frequency response of an amplifier. To draw the frequency

response using Bode plot, high frequency and low frequency were calculated with

fHi=1/2πRTHiCi for high frequency and fHi=1/2πRTHiCi for low frequency. RTHi=RBllZb

where Zb is β(re+RE) and the result for RE=540Ω is 40.70kΩ while for RE=600Ω is higher

which is 45.20 kΩ. The RTHi is calculated with the value of RB parallel with Zb before and

the Ci value by using Cwi+Cbe+Cmi. The comparison for each value is RTHi value for

RE=540Ω is higher but Ci value is lower when RE=600Ω. With all the calculated value, the

fHi=1/2πRTHoCo equation can be substituted to find the high frequency for both RE. the fHi

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for RE=540Ω is 65.97kHz while for RE=600Ω is slightly lower which is 64.59kHz. Next is to

find the fHo with 1/2πRTHoCo. As RTHo=RC, then the Co is calculated with the given

Cwo+Cce+Cmo where resulting the value for RE=540Ω is 24 and RE=600Ω is slightly higher

because the difference in the voltage gain value. By plotting all the calculated value on the

bode graph, the horizontal scale indicates the frequency (in Hz) and the vertical scale indicates

the gain (in dB). The mid-range frequency range of an amplifier is called the bandwidth of the

amplifier where the bandwidth is defined by the lower and upper cutoff frequencies. Cutoff is

when any frequency at which the gain has dropped by 3dB.the first frequency response graph

of RE=540Ω show bandwidth value of 65.650kHz. The highest lower cutoff frequency (fL)

and the lowest upper cutoff frequency (fH) are closest to the actual response of the amplifier

as shown in the graph 1 and graph 2.

For the multisim simulation, figure 1 and figure 5 shows a circuit constructed to find

DC analysis using multisim software when RE=540Ω and RE=600Ω. The probe is placed at

the RB and RC of the circuit. The value is recorded in the result. Figure 2 and figure 6 is to

find input and output value analysis using probe when RE=540Ω and RE=600Ω. The probe is

place at the coupling capacitor to find the value of input and the output value such as Vrms,

Vp-p, Vdc, Vfreq and current. The input and output also connected to the probe and the result

show in figure 3 and figure 7. The comparison between RE=540Ω and RE=600Ω is the voltage

value at RE=600Ω is higher compare to the RE=540Ω. For the current, the RE=540Ω is higher

than RE=600Ω. Figure 4 and figure 8 shows frequency response when RE=600Ω and

RE=540Ω using multisim.

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CONCLUSION

As conclusion, based on the task had been done, students are able to measure the

resistor, current, capacitor, power gains of the CE amplifier and measure the input and output

impedance of the CE amplifier. First, Kirchoff’s laws represent the basis of the analysis. These

laws state that the sum of all the voltage changes as it follows around a loop in a circuit is

always exactly zero, and the current going into any point in a circuit is equal to the current

going out of it [6]. Next thing that students learn is the most significant feature of the

performance of a CE Circuit with Unbypassed Emitter Resistor is that its voltage gain is much

lower than it would be normally. There will be negative feedback to the base-emitter input

signal and this should reduce the gain of the amplifier stage. Then, the most common tool used

to represent the frequency response of any system is the Bode plot. It consists of the normalized

gain AV (dB) as a function of the frequency in log scale.

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REFERENCE

[1] Aseeri, Ali Habeb, and Fouzeyah Rajab Ali. "Bipolar junction transistor as a switch."

IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) 13 (2018): 54-57.

[2] Choudhary, Bhagwan. "Study & Application of Bipolar Junction Transistor." (2017).

[3] Jones, Martin Hartley. A practical introduction to electronic circuits. Cambridge

University Press, 1995.

[4] DeSautels, A. N. "A comparison of three common emitter transistor servo

preamplifiers." Transactions of the American Institute of Electrical Engineers, Part I:

Communication and Electronics 75.1 (1956): 17-25.

[5] Pratt, W. J. (1997). U.S. Patent No. 5,629,648. Washington, DC: U.S. Patent and

Trademark Office.

[6] Wenjing, L.I. and Gongchang, A.N., 2013. Application of Kirchhoff􀆳 s Voltage Law

in Circuit Analysis. Electronic Sci. & Tech, 26(7), pp.136-138.

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