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Introduction Author DR - Ali Hussein Numan

IGBTs are power semiconductor devices that combine the characteristics of bipolar junction transistors and MOSFETs. They can operate at voltages up to 4.5 kV, currents up to 1.2 kA, and switching frequencies as high as 100 kHz. MOS controlled thyristors are also voltage controlled devices like IGBTs and MOSFETs, and can achieve higher current densities than IGBTs or power MOSFETs.

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27 views

Introduction Author DR - Ali Hussein Numan

IGBTs are power semiconductor devices that combine the characteristics of bipolar junction transistors and MOSFETs. They can operate at voltages up to 4.5 kV, currents up to 1.2 kA, and switching frequencies as high as 100 kHz. MOS controlled thyristors are also voltage controlled devices like IGBTs and MOSFETs, and can achieve higher current densities than IGBTs or power MOSFETs.

Uploaded by

basharfarhan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Introduction Author Dr.

Ali Hussein Numan

IGBTs are voltage controlled four-layer devices that combine the characteristics of
BJT and MOSFET. They are currently available with voltage rating 4.5 KV, current
rating 1.2 KA and switching frequency up to 100 KHz. Fig.1.10 show photo for
IGBTs.

Fig.1.10 Photos for IGBTs.

1-5-4 MOS CONTROLLED THYRISTORS (MCTs)


The MCT is voltage controlled device like IGBT and the MOSFET. The current
density of MCT is high compared to a power MOSFET, and IGBT. The circuit
symbol for an MCT is shown in Fig.1.11a and its steady state i-v as well as idealized
characteristics is shown in Fig. 1.11b and Fig. 1.11c respectively.

Fig.1.11 An MCT : (a) symbol, (b) i-v characteristics, (c) idealized.

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