DDR / Ddr1 Sdram Memory
DDR / Ddr1 Sdram Memory
DDR or as it was sometimes called DDR1 SDRAM was a development of the first SDRAM memory
technology to improve its performance.
The initials DDR stand for Double Data Rate and as such it gave a significant increase in the speed
of operation of the previous generation of SDRAM technology at the time of its introduction.
DDR SDRAM / DDR1 SDRAM was the first incarnation of this technology and it achieved its speed
increase by transferring data by transferring data twice per cycle, i.e. on both the rising and then the
falling edge of the clock signal.
As a result of its speed improvement, DDR / DDR1 SDRAM was quickly adopted and single data
rate, SDRAM soon became obsolete.
The very tight timing requirements often require the use of phase locked loops and self-calibration
techniques to ensure the timing is sufficiently accurate.
The key to the operation is that the DDR SDRAM is able to transfer data on both the rising as well as
the falling edges of the clock pulse. This has many advantages, not only increasing the data rate, but
also reducing other problems such as the signal integrity requirements. At these speeds, signal
integrity can become a significant issue, and maximising the data transfer rate for a given clock rate
provides improvements in this area.
DDR SDRAM DATA RATES AND CLOCK SPEEDS
DDR SDRAM TYPE DATA RATE MEMORY CLOCK SPEED
MB/S/PIN (MHZ)
DDR-266 266 133
DDR-333 333 166
DDR-400 400 200
DDR SDRAMs access multiple memory locations in a single read or write command.
A memory read operation entails sending an "Activate" command followed by a "Read" command.
The memory has a certain latency after which the data is available - the memory provides a burst of
data from two, four, or eight memory locations at a rate of two memory locations per clock cycle. It is
therefore possible to read four memory locations in two consecutive clock cycles.
These banks can be addressed separately, and to accommodate this memory addressing is
required. As this is done in binary notation, four DDR SDRAM memory banks require two lines for
addressing: BA0 & BA1.
To provide an example of how DDR SDRAM operates in banks, a four bank DDR SDRAM may
operate as follows:
The power required by a DDR / DDR1 SDRAM is related to the number of rows that are open at any
one time. Thus to gain the fastest operation, it is necessary to open a number of rows together, but
this consumes more power. For low power operation, only one row should be open at any one time
in each bank, and there should also not be multiple banks each with open rows.
DDR / DDR1 SDRAM gave significant improvements in performance at the time. However it was
superseded by the next generation of SDRAM known as DDR2 SDRAM.