Feb 2003

AO4606
Complementary Enhancement Mode Field Effect Transistor

General Description Features

n-channel p-channel
The AO4606 uses advanced trench VDS (V) = 30V -30V
technology MOSFETs to provide excellent ID = 6.9A -6A
RDS(ON) and low gate charge. The RDS(ON) RDS(ON)
complementary MOSFETs may be used < 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)
to form a level shifted high side switch, < 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)
and for a host of other applications.

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 6.9 -6
Current A TA=70°C ID 5.8 -5 A
B
Pulsed Drain Current IDM 30 -30
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 48 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State n-ch 74 110 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL n-ch 35 60 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 48 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State p-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4606

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.9 3 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 20 A
VGS=10V, ID=6.9A 22.5 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.3 38
VGS=4.5V, ID=5.0A 34.5 42 mΩ
gFS Forward Transconductance VDS=5V, ID=6.9A 10 15.4 S
VSD Diode Forward Voltage IS=1A 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 nC
Qg(4.5V) Total Gate Charge 6.74 nC
VGS=10V, VDS=15V, ID=6.9A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2Ω, 4.1 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.6 ns
tf Turn-Off Fall Time 5.2 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4606

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 -2 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 30 A
VGS=-10V, ID=-6A 28 35
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 37 45
VGS=-4.5V, ID=-5A 44 58 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6A 13 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 122 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 18.5 nC
Qg(4.5V) Total Gate Charge (4.5V) 9.6 nC
VGS=-10V, VDS=-15V, ID=-6A
Qgs Gate Source Charge 2.7 nC
Qgd Gate Drain Charge 4.5 nC
tD(on) Turn-On DelayTime 7.7 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.7Ω, 5.7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.2 ns
tf Turn-Off Fall Time 9.5 ns
trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 20 ns
Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 8.8 nC

2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.

AO4606

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V
8
10
125°C
VGS=3V 4
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.6
VGS=10V
Normalized On-Resistance 1.5 ID=5A
50
1.4
VGS=4.5V
RDS(ON) (mΩ)

40 VGS=4.5V 1.3

1.2
30
1.1

20 1
VGS=10V
0.9
10
0 5 10 15 20 0.8
0 50 100 150 200
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( °C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

70 1.0E+01

60 1.0E+00
ID=5A
1.0E-01
50
IS Amps
RDS(ON) (mΩ)

125°C 1.0E-02
40 125°C
1.0E-03
30
25°C
1.0E-04
20 25°C
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10 VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4606

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V 900 f=1MHz
ID=6.9A VGS=0V
8 800
700

Capacitance (pF)
Ciss
VGS (Volts)

6 600
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON) TA=25°C
TA=25°C
limited
100µs 30
10 1ms 10µs
ID (Amps)

Power W

10ms
20
0.1s

1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V
-6V VDS=-5V
25 -5V 25

20 20
-4V
-ID (A)

-ID(A)
15 15

-3.5V
10 10

5 5 125°C
VGS=-3V 25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.60
55 ID=-6A
Normalized On-Resistance

50 VGS=-4.5V
1.40 VGS=-10V
45
RDS(ON) (mΩ)

40
35 1.20 VGS=-4.5V
30 VGS=-10V

25
1.00
20
15
0.80
10
0 25 50 75 100 125 150 175
0 5 10 15 20 25
-ID (A) Temperature (°C)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

80 1.0E+01

70 ID=-6A 1.0E+00

60 1.0E-01

50 125°C
RDS(ON) (mΩ)

1.0E-02
-IS (A)

125°C
40
1.0E-03
30
25°C 1.0E-04
20 25°C
1.0E-05
10
1.0E-06
0 0.0 0.2 0.4 0.6 0.8 1.0
3 4 5
6 7 8 9 10
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=-15V
ID=-6A 1250
8 Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
750
4
500
Coss Crss
2
250

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs 30
10.0 100µs
limited
Power (W)
-ID (Amps)

0.1s 1ms
20
10ms
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

 ALPHA & OMEGA SO-8 Package Data
SEMICONDUCTOR, INC.

DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES

SYMBOLS
MIN NOM MAX MIN NOM MAX
A 1.45 1.50 1.55 0.057 0.059 0.061
A1 0.00 −−− 0.10 0.000 −−− 0.004
A2 −−− 1.45 −−− −−− 0.057 −−−
b 0.33 −−− 0.51 0.013 −−− 0.020
c 0.19 −−− 0.25 0.007 −−− 0.010
D 4.80 −−− 5.00 0.189 −−− 0.197
E1 3.80 −−− 4.00 0.150 −−− 0.157
e 1.27 BSC 0.050 BSC
E 5.80 −−− 6.20 0.228 −−− 0.244
h 0.25 −−− 0.50 0.010 −−− 0.020
L 0.40 −−− 1.27 0.016 −−− 0.050
aaa −−− −−− 0.10 −−− −−− 0.004
θ 0° −−− 8° 0° −−− 8°

θ
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE

PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN

NOTE:
LOGO - AOS LOGO
4606 - PART NUMBER CODE.
LOGO 4 6 0 6 F - FAB LOCATION
A - ASSEMBLY LOCATION
FAYWLC
Y - YEAR CODE
W - WEEK CODE.
LC - ASSEMBLY LOT CODE

SO-8 PART NO. CODE

UNIT: mm

PART NO. CODE

AO4606 4606

Rev. A
 ALPHA & OMEGA SO-8 Tape and Reel Data
SEMICONDUCTOR, INC.

SO-8 Carrier Tape

SO-8 Reel

SO-8 Tape
Leader / Trailer
& Orientation
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