SEMICONDUCTOR TIP41/41A/41B/41C

TECHNICAL D ATA

A
O
C
F

TIP41/41A/41B/41C TRANSISTOR (NPN) E

B
DIM MILLIMETERS
A 10.15 ± 0.15
FEATURES B 15.30 MAX
C 1.3 0.1/-0.15

Medium Power Linear Switching Applications P D

E
0.8 ± 0.1
3.8 ± 0.2
F 2.7 ± 0.2
J H 0.4 ± 0.15
D J 13.6 ± 0.2
N N H N 2.54 ± 0.2
O 4.5 ± 0.2
1 2 3 P 2.7 ± 0.2

1 BASE
2 COLLECTOR
3 EMITTER

TO-220AB
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter TIP41 TIP41A TIP41B TIP41C Unit

VCBO Collector-Base Voltage 40 60 80 100 V
VCEO Collector-Emitter Voltage 40 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 6 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature Range -55to+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Max Unit
Collector-base breakdown voltage TIP41 40
TIP41A 60
V(BR)CBO IC= 1mA, IE=0 V
TIP41B 80
TIP41C 100
Collector-emitter breakdown voltage TIP41 40
TIP41A 60
V(BR)CEO IC= 30mA, IB=0 V
TIP41B 80
TIP41C 100
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V
Collector cut-off current TIP41 VCB=40V, IE=0
TIP41A VCB=60V, IE=0
ICBO 0.4 mA
TIP41B VCB=80V, IE=0
TIP41C VCB=100V, IE=0

VCE= 30V, IB= 0

Collector cut-off current TIP41/41A ICEO 0.7 mA
VCE= 60V, IB= 0
TIP41B/41C
Emitter cut-off current IEBO VEB=5V, IC=0 1 mA
hFE(1) VCE= 4V, IC= 0.3A 30
DC current gain
hFE(2) VCE=4 V, IC= 3A 15 75
Collector-emitter saturation voltage VCE(sat) IC=6A, IB=0.6A 1.5 V
Base-emitter voltage VBE(on VCE= 4V, IC=6A 2 V
VCE=10V , IC=0.5A
Transition frequency fT 3 MHZ
f =1MHz

2011. 09. 27 Revision No : 0 1/2

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2011. 09. 27 Revision No : 0 2/2