SB120 Thru SB160: Vishay General Semiconductor
SB120 Thru SB160: Vishay General Semiconductor
SB120 Thru SB160: Vishay General Semiconductor
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching
• Low forward voltage drop
• High forward surge capability
DO-204AL (DO-41) • High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity protection
IF(AV) 1.0 A applications.
VRRM 20 V to 60 V
MECHANICAL DATA
IFSM 50 A
Case: DO-204AL (DO-41)
VF 0.48 V, 0.65 V Molding compound meets UL 94 V-0 flammability rating
TJ max. 125 °C, 150 °C Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Document Number: 88715 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 16-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SB120 thru SB160
Vishay General Semiconductor
1.0 100
SB150 and SB160 TJ = 125 °C
Instantaneous Forward Current (A)
Average Forward Current (A)
0.75 10
TJ = 150 °C Pulse Width = 300 μs
1 % Duty Cycle
SB120 to SB140
0.5 1
TJ = 25 °C
0.25 0.1
Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
50 100
TJ = TJ Max. SB120 thru SB140
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
TJ = 125 °C
30 1
20 0.1 TJ = 75 °C
10 0.01
TJ = 25 °C
0 0.001
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88715
2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 16-Oct-09
SB120 thru SB160
Vishay General Semiconductor
1000 100
TJ = 25 °C
10
100
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 88715 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 16-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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