STM32F412xE STM32F412xG

Arm®-Cortex®-M4 32b MCU+FPU, 125 DMIPS, 1MB Flash,

256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
Datasheet - production data

Features )%*$

• Dynamic Efficiency Line with BAM (Batch

Acquisition Mode)
® ®
• Core: Arm 32-bit Cortex -M4 CPU with FPU, WLCSP64 LQFP64 (10x10mm) UFBGA100
UFQFPN48 (7x7mm)
(3.623x3.651mm) LQFP100 (14x14mm) (7x7 mm) UFBGA144
Adaptive real-time accelerator (ART LQFP144 (20x20mm) (10x10mm)
Accelerator™) allowing 0-wait state execution
from Flash memory, frequency up to 100 MHz, • Up to 17 timers: up to twelve 16-bit timers, two
memory protection unit, 32-bit timers up to 100 MHz each with up to
125 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), four IC/OC/PWM or pulse counter and
and DSP instructions quadrature (incremental) encoder input, two
watchdog timers (independent and window),
• Memories
one SysTick timer
– Up to 1 Mbyte of Flash memory
– 256 Kbyte of SRAM • Debug mode
– Flexible external static memory controller – Serial wire debug (SWD) & JTAG
with up to 16-bit data bus: SRAM, PSRAM, – Cortex®-M4 Embedded Trace Macrocell™
NOR Flash memory • Up to 114 I/O ports with interrupt capability
– Dual mode Quad-SPI interface
– Up to 109 fast I/Os up to 100 MHz
• LCD parallel interface, 8080/6800 modes – Up to 114 five V-tolerant I/Os
• Clock, reset and supply management • Up to 17 communication interfaces
– 1.7 V to 3.6 V application supply and I/Os – Up to 4x I2C interfaces (SMBus/PMBus)
– POR, PDR, PVD and BOR – Up to 4 USARTs (2 x 12.5 Mbit/s,
– 4-to-26 MHz crystal oscillator 2 x 6.25 Mbit/s), ISO 7816 interface, LIN,
– Internal 16 MHz factory-trimmed RC IrDA, modem control)
– 32 kHz oscillator for RTC with calibration – Up to 5 SPI/I2Ss (up to 50 Mbit/s, SPI or
– Internal 32 kHz RC with calibration I2S audio protocol), out of which 2 muxed
full-duplex I2S interfaces
• Power consumption – SDIO interface (SD/MMC/eMMC)
– Run: 112 µA/MHz (peripheral off) – Advanced connectivity: USB 2.0 full-speed
– Stop (Flash in Stop mode, fast wakeup device/host/OTG controller with PHY
time): 50 µA Typ @ 25 °C; 75 µA max – 2x CAN (2.0B Active)
@25 °C • True random number generator
– Stop (Flash in Deep power down mode, • CRC calculation unit
slow wakeup time): down to 18 µA @ • 96-bit unique ID
25 °C; 40 µA max @25 °C • RTC: subsecond accuracy, hardware calendar
– Standby: 2.4 µA @25 °C / 1.7 V without ®
• All packages are ECOPACK 2
RTC; 12 µA @85 °C @1.7 V
– VBAT supply for RTC: 1 µA @25 °C Table 1. Device summary
• 1×12-bit, 2.4 MSPS ADC: up to 16 channels Reference Part number

• 2x digital filters for sigma delta modulator, STM32F412xE

STM32F412CE, STM32F412RE, STM32F412VE,
STM32F412ZE
4x PDM interfaces, stereo microphone support
STM32F412CG, STM32F412RG, STM32F412VG,
• General-purpose DMA: 16-stream DMA STM32F412xG
STM32F412ZG

December 2017 DocID028087 Rev 7 1/201

This is information on a product in full production. www.st.com
Contents STM32F412xE/G

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.1 Compatibility with STM32F4 series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.1 Arm® Cortex®-M4 with FPU core with embedded Flash and SRAM . . . . 19
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 19
3.3 Batch Acquisition mode (BAM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.4 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.5 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.6 One-time programmable bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.7 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 20
3.8 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.9 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.10 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.11 Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 22
3.12 Quad-SPI memory interface (QUAD-SPI) . . . . . . . . . . . . . . . . . . . . . . . . 22
3.13 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 23
3.14 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.15 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.17 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.18 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.18.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.19 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.19.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.19.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.19.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 31
3.20 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 31
3.21 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

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3.22 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

3.23 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.23.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.23.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.23.3 Basic timer (TIM6, TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.23.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.23.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.23.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.24 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.25 Universal synchronous/asynchronous receiver transmitters (USART) . . 37
3.26 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.27 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.28 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.29 Digital filter for sigma-delta modulators (DFSDM) . . . . . . . . . . . . . . . . . . 38
3.30 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 40
3.31 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.32 Universal serial bus on-the-go full-speed (USB_OTG_FS) . . . . . . . . . . . 40
3.33 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.34 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.35 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.36 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.37 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.38 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

4.1 WLSCP64 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
4.2 UFQFPN48 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
4.3 LQFP64 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
4.4 LQFP100 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
4.5 LQFP144 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4.6 UFBGA100 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
4.7 UFBGA144 pinout description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
4.8 Pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

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Contents STM32F412xE/G

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.3.2 VCAP_1/VCAP_2 external capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . 85
6.3.3 Operating conditions at power-up/power-down (regulator ON) . . . . . . . 85
6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 86
6.3.5 Embedded reset and power control block characteristics . . . . . . . . . . . 86
6.3.6 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.7 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . 105
6.3.8 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 107
6.3.9 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 111
6.3.10 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
6.3.11 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 115
6.3.12 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
6.3.13 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
6.3.14 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 121
6.3.15 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
6.3.16 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
6.3.17 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.18 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
6.3.19 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
6.3.20 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
6.3.21 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
6.3.22 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
6.3.23 Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
6.3.24 DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149

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6.3.25 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150

6.3.26 SD/SDIO MMC/eMMC card host interface (SDIO) characteristics . . . 164
6.3.27 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167

7.1 WLCSP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
7.2 UFQFPN48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
7.3 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
7.4 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
7.5 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
7.6 UFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
7.7 UFBGA144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
7.8 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
7.8.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191

Appendix A Recommendations when using the internal reset OFF . . . . . . . . 192

Appendix B Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

B.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 193
B.2 Sensor Hub application example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
B.3 Display application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

DocID028087 Rev 7 5/201

5
List of tables STM32F412xE/G

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32F412xE/G features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 3. Embedded bootloader interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 4. Regulator ON/OFF and internal power supply supervisor availability. . . . . . . . . . . . . . . . . 31
Table 5. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 6. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 7. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 8. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 9. STM32F412xE/G pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 10. FSMC pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 11. STM32F412xE/G alternate functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 12. STM32F412xE/G register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 13. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Table 14. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 15. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 16. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 17. Features depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 18. VCAP_1/VCAP_2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Table 19. Operating conditions at power-up / power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . 85
Table 20. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 86
Table 21. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 86
Table 22. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 23. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 24. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory- VDD = 1.7 V . . . 90
Table 25. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory - VDD = 3.6 V . . 91
Table 26. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 3.6 V. . . . . . . . . . . . . . . 92
Table 27. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 1.7 V. . . . . . . . . . . . . . . 93
Table 28. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled with prefetch) running from Flash memory - VDD = 3.6 V . . . . . 94
Table 29. Typical and maximum current consumption in Sleep mode - VDD = 3.6 V . . . . . . . . . . . . . 95
Table 30. Typical and maximum current consumption in Sleep mode - VDD = 1.7 V . . . . . . . . . . . . . 96
Table 31. Typical and maximum current consumptions in Stop mode - VDD = 1.7 V . . . . . . . . . . . . . 97
Table 32. Typical and maximum current consumption in Stop mode - VDD=3.6 V. . . . . . . . . . . . . . . 97
Table 33. Typical and maximum current consumption in Standby mode - VDD= 1.7 V . . . . . . . . . . . 97
Table 34. Typical and maximum current consumption in Standby mode - VDD= 3.6 V . . . . . . . . . . . 98
Table 35. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 98
Table 36. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 37. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 38. Low-power mode wakeup timings(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 39. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 40. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 41. HSE 4-26 MHz oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

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STM32F412xE/G List of tables

Table 42. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

Table 43. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 44. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 45. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 46. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 47. SSCG parameter constraints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 48. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 49. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 50. Flash memory programming with VPP voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 51. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 52. EMS characteristics for LQFP144 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 53. EMI characteristics for LQFP144 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 54. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 55. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 56. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 57. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 58. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 59. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 60. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 61. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 62. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 63. SCL frequency (fPCLK1= 50 MHz, VDD = VDD_I2C = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 64. FMPI2C characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 65. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 66. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 67. QSPI dynamic characteristics in SDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 68. QSPI dynamic characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 69. USB OTG FS startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 70. USB OTG FS DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 71. USB OTG FS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 72. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 73. ADC accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 74. ADC accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 75. ADC accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 76. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions . . . . . . . . . . . . . . . . . 143
Table 77. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions . . . . . . . . . . . . . . . . . 143
Table 78. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 79. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 80. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 81. Embedded internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 82. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 83. DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 84. Asynchronous non-multiplexed SRAM/PSRAM/NOR -
read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 85. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 153
Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 88. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Table 89. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 155
Table 90. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 157

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List of tables STM32F412xE/G

Table 91. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 157

Table 92. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 93. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Table 94. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 162
Table 95. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 96. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 97. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V. . . . . . . . . . . . . . . 166
Table 98. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 99. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 100. WLCSP64 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . . 169
Table 101. UFQFPN48 - 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 102. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Table 103. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Table 104. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Table 105. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Table 106. UFBGA100 recommended PCB design rules (0.5 mm pitch BGA) . . . . . . . . . . . . . . . . . 185
Table 107. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Table 108. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA) . . . . . . . . . . . . . . . . 188
Table 109. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 110. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 111. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

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STM32F412xE/G List of figures

List of figures

Figure 1. Compatible board design for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 2. Compatible board design for LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 3. Compatible board design for LQFP144 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 4. STM32F412xE/G block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5. Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 6. VDDUSB connected to an external independent power supply . . . . . . . . . . . . . . . . . . . . . 25
Figure 7. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 27
Figure 8. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 9. Startup in regulator OFF: slow VDD slope
power-down reset risen after VCAP_1/VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 10. Startup in regulator OFF mode: fast VDD slope
power-down reset risen before VCAP_1/VCAP_2 stabilization. . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 11. STM32F412xE/G WLCSP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12. STM32F412xE/G UFQFPN48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 13. STM32F412xE/G LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 14. STM32F412xE/G LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 15. STM32F412xE/G LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 16. STM32F412xE/G UFBGA100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 17. STM32F412xE/G UFBGA144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 18. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Figure 19. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 20. Input voltage measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 21. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Figure 22. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 23. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 24. Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
“low power” mode selection) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 25. Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
“high drive” mode selection) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Figure 26. Low-power mode wakeup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 27. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Figure 28. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Figure 29. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 30. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Figure 31. ACCHSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 32. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Figure 33. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 34. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Figure 35. FT/TC I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 36. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Figure 37. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 38. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Figure 39. FMPI2C timing diagram and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Figure 40. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 41. SPI timing diagram - slave mode and CPHA = 1(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 42. SPI timing diagram - master mode(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 43. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Figure 44. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137

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List of figures STM32F412xE/G

Figure 45. USB OTG FS timings: definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . 140
Figure 46. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Figure 47. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 146
Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 147
Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 151
Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 153
Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 154
Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 54. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 55. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 162
Figure 57. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 58. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 59. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 60. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 61. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Figure 62. WLCSP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 63. UFQFPN48 - 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Figure 64. UFQFPN48 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 65. UFQFPN48 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 66. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package outline . . . . . . . . . . . . . . . . 173
Figure 67. LQFP64 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 68. LQFP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Figure 69. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline . . . . . . . . . . . . . . 177
Figure 70. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 71. LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Figure 72. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package outline . . . . . . . . . . . . . . 180
Figure 73. LQFP144 - 144-pin,20 x 20 mm low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Figure 74. LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 75. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 76. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 77. UFBGA100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 78. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 79. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array recommended footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 80. UFBGA144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 81. USB controller configured as peripheral-only and used in Full speed mode . . . . . . . . . . 193
Figure 82. USB peripheral-only Full speed mode with direct connection
for VBUS sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 83. USB peripheral-only Full speed mode, VBUS detection using GPIO . . . . . . . . . . . . . . . . 194
Figure 84. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 194
Figure 85. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 195
Figure 86. Sensor Hub application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

10/201 DocID028087 Rev 7

STM32F412xE/G List of figures

Figure 87. Display application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

DocID028087 Rev 7 11/201

11
Introduction STM32F412xE/G

1 Introduction

This datasheet provides the description of the STM32F412xE/G microcontrollers.

For information on the Cortex®-M4 core, refer to the Cortex®-M4 programming manual
(PM0214) available from www.st.com.

12/201 DocID028087 Rev 7

STM32F412xE/G Description

2 Description

STM32F412XE/G devices are based on the high-performance Arm® Cortex® -M4 32-bit
RISC core operating at a frequency of up to 100 MHz. Their Cortex®-M4 core features a
Floating point unit (FPU) single precision which supports all Arm single-precision data-
processing instructions and data types. It also implements a full set of DSP instructions and
a memory protection unit (MPU) which enhances application security.
STM32F412XE/G devices belong to the STM32 Dynamic Efficiency™ product line (with
products combining power efficiency, performance and integration) while adding a new
innovative feature called Batch Acquisition Mode (BAM) allowing even more power
consumption saving during data batching.
STM32F412XE/G devices incorporate high-speed embedded memories (up to 1 Mbyte of
Flash memory, 256 Kbytes of SRAM), and an extensive range of enhanced I/Os and
peripherals connected to two APB buses, three AHB buses and a 32-bit multi-AHB bus
matrix.
All devices offer one 12-bit ADC, a low-power RTC, twelve general-purpose 16-bit timers,
two PWM timers for motor control and two general-purpose 32-bit timers.
They also feature standard and advanced communication interfaces:
• Up to four I2Cs, including one I2C supporting Fast-Mode Plus
• Five SPIs
• Five I2Ss of which two are full duplex. To achieve audio class accuracy, the I2S
peripherals can be clocked via a dedicated internal audio PLL, or via an external clock
to allow synchronization.
• Four USARTs
• An SDIO/MMC interface
• A USB 2.0 OTG full-speed interface
• Two CANs.
In addition, STM32F412xE/G devices embed advanced peripherals:
• A flexible static memory controller interface (FSMC)
• A Quad-SPI memory interface
• A digital filter for sigma modulator (DFSDM), two filters, up to four inputs, and support
of microphone MEMs.
STM32F412xE/G devices are offered in 7 packages ranging from 48 to 144 pins. The set of
available peripherals depends on the selected package.
The STM32F412xE/G operates in the -40 to +125 °C temperature range from a 1.7 (PDR
OFF) to 3.6 V power supply. A comprehensive set of power-saving modes allows the design
of low-power applications.

DocID028087 Rev 7 13/201

42
Description STM32F412xE/G

These features make the STM32F412xE/G microcontrollers suitable for a wide range of
applications:
• Motor drive and application control
• Medical equipment
• Industrial applications: PLC, inverters, circuit breakers
• Printers, and scanners
• Alarm systems, video intercom, and HVAC
• Home audio appliances
• Mobile phone sensor hub
• Wearable devices
• Connected objects
• Wifi modules

14/201 DocID028087 Rev 7

STM32F412xE/G Description

Table 2. STM32F412xE/G features and peripheral counts

Peripherals STM32F412xE STM32F412xG

Flash memory (Kbyte) 512 1024

SRAM
System 256
(Kbyte)
FSMC memory
- 1 - 1
controller(1)
Quad-SPI memory
- 1 - 1
interface
General-
10
purpose
Timers Advanced-
2
control
Basic 2
Random number generator 1
SPI/ I2S 5/5 (2 full duplex)
I2C 3
2CFMP
I 1
(2)
Comm. USART 4 4 4(2) 4
interfaces
SDIO/MMC 1
USB/OTG FS 1 1 1 1
Dual power rail No Yes No Yes
CAN 2
Number of digital Filters for 2 2 2 2
Sigma-delta modulator
Number of channels 3 4 3 4
LCD parallel interface
- 8 16 - 8 16
Data bus size
GPIOs 36 50 81 114 36 50 81 114

12-bit ADC 1
Number of channels 10 16 10 16
Maximum CPU frequency 100 MHz
Operating voltage 1.7 to 3.6 V
Ambient temperatures: -40 to +85 °C / -40 to +105 °C/ -40 to +125 °C
Operating temperatures
Junction temperature: -40 to +130 °C
UFBGA UFBGA LQFP64 UFBGA UFBGA
UFQ LQFP64 UFQ
Package 100 144 WLCSP 100 144
FPN48 WLCSP64 FPN48
LQFP100 LQFP144 64 LQFP100 LQFP144
1. The FSMC can also be used to interface most graphic LCD controllers.
2. Limited application for the USART3 since RX is not available for the UFQFPN48.

DocID028087 Rev 7 15/201

42
Description STM32F412xE/G

2.1 Compatibility with STM32F4 series

The STM32F412xE/G are fully software and feature compatible with the STM32F4 series
(STM32F42x, STM32F401, STM32F43x, STM32F41x, STM32F405 and STM32F407)
The STM32F412xE/G can be used as drop-in replacement of the other STM32F4 products
but some slight changes have to be done on the PCB board.

Figure 1. Compatible board design for LQFP100 package

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16/201 DocID028087 Rev 7

STM32F412xE/G Description

Figure 2. Compatible board design for LQFP64 package

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DocID028087 Rev 7 17/201

42
Description STM32F412xE/G

Figure 4. STM32F412xE/G block diagram

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1. The timers connected to APB2 are clocked from TIMxCLK up to 100 MHz, while the timers connected to APB1 are clocked
from TIMxCLK up to 50 MHz.

18/201 DocID028087 Rev 7

STM32F412xE/G Functional overview

3 Functional overview

3.1 Arm® Cortex®-M4 with FPU core with embedded Flash and
SRAM
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional code-
efficiency, delivering the high-performance expected from an Arm core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F412xE/G devices are compatible with all Arm tools and software.
Figure 4 shows the general block diagram of the STM32F412xE/G.
Note: Cortex®-M4 with FPU is binary compatible with Cortex®-M3.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator which is optimized for STM32 industry-
standard Arm® Cortex®-M4 with FPU processors. It balances the inherent performance
advantage of the Arm® Cortex®-M4 with FPU over Flash memory technologies, which
normally requires the processor to wait for the Flash memory at higher frequencies.
To release the processor full 125 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 128-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 100 MHz.

3.3 Batch Acquisition mode (BAM)

The Batch acquisition mode allows enhanced power efficiency during data batching. It
enables data acquisition through any communication peripherals directly to memory using
the DMA in reduced power consumption as well as data processing while the rest of the
system is in low-power mode (including the flash and ART). For example in an audio
system, a smart combination of PDM audio sample acquisition and processing from the
DFSDM directly to RAM (flash and ART™ stopped) with the DMA using BAM followed by
some very short processing from flash allows to drastically reduce the power consumption
of the application. A dedicated application note (AN4515) describes how to implement the
STM32F412xE/G BAM to allow the best power efficiency.

DocID028087 Rev 7 19/201

42
Functional overview STM32F412xE/G

3.4 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 byte and the whole 4 Gbyte of
addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.5 Embedded Flash memory

The devices embed up to 1 Mbyte of Flash memory available for storing programs and data.
The Flash user area can be protected against reading by an entrusted code (Read
Protection, RDP) with different protection levels.
The flash user sectors can also be individually protected against write operation.
Furthermore the proprietary readout protection (PCROP) can also individually protect the
flash user sectors against D-bus read accesses.
(Additional information can be found in the product reference manual).
To optimize the power consumption the Flash memory can also be switched off in Run or in
Sleep mode (see Section 3.21: Low-power modes).
Two modes are available: Flash in Stop mode or in DeepSleep mode (trade off between
power saving and startup time.
Before disabling the Flash, the code must be executed from the internal RAM.

3.6 One-time programmable bytes

A one-time programmable area is available with16 OTP blocks of 32 bytes. Each block can
be individually locked
(Additional information can be found in the product reference manual)

3.7 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.

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STM32F412xE/G Functional overview

3.8 Embedded SRAM

All devices embed 256 Kbyte of system SRAM which can be accessed (read/write) at CPU
clock speed with 0 wait states

3.9 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs) and the slaves
(Flash memory, RAM, AHB and APB peripherals) and ensures a seamless and efficient
operation even when several high-speed peripherals work simultaneously.

Figure 5. Multi-AHB matrix

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3.10 DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.

DocID028087 Rev 7 21/201

42
Functional overview STM32F412xE/G

The DMA can be used with the main peripherals:

• SPI and I2S
• I2C and I2CFMP
• USART
• General-purpose, basic and advanced-control timers TIMx
• SD/SDIO/MMC/eMMC host interface
• Quad-SPI
• ADC
• Digital Filter for sigma-delta modulator (DFSDM) with a separate stream for each filter.

3.11 Flexible static memory controller (FSMC)

The Flexible static memory controller (FSMC) includes a NOR/PSRAM memory controller. It
features four Chip Select outputs supporting the following modes: SRAM, PSRAM and NOR
Flash memory.
The main functions are:
• 8-,16-bit data bus width
• Write FIFO
• Maximum FSMC_CLK frequency for synchronous accesses is 90 MHz.

LCD parallel interface

The FSMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost-
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.

3.12 Quad-SPI memory interface (QUAD-SPI)

All devices embed a Quad-SPI memory interface, which is a specialized communication
interface targeting single, dual or quad-SPI Flash memories. It can work in direct mode
through registers, external Flash status register polling mode and memory mapped mode.
Up to 256 Mbyte of external Flash memory are mapped. They can be accessed in 8, 16 or
32-bit mode. Code execution is also supported. The opcode and the frame format are fully
programmable. Communication can be performed either in single data rate or dual data
rate.

22/201 DocID028087 Rev 7

STM32F412xE/G Functional overview

3.13 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 81 maskable interrupt channels plus the 16 interrupt lines of the
Cortex®-M4 with FPU.
• Closely coupled NVIC gives low-latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving, higher-priority interrupts
• Support tail chaining
• Processor state automatically saved
• Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.

3.14 External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 21 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 114 GPIOs can be connected
to the 16 external interrupt lines.

3.15 Clocks and startup

On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The
16 MHz internal RC oscillator is factory-trimmed to offer 1% accuracy at 25 °C. The
application can then select as system clock either the RC oscillator or an external 4-26 MHz
clock source. This clock can be monitored for failure. If a failure is detected, the system
automatically switches back to the internal RC oscillator and a software interrupt is
generated (if enabled). This clock source is input to a PLL thus allowing to increase the
frequency up to 100 MHz. Similarly, full interrupt management of the PLL clock entry is
available when necessary (for example if an indirectly used external oscillator fails).
Several prescalers allow the configuration of the three AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the three AHB
buses and high-speed APB domains is 100 MHz. The maximum allowed frequency of the
low-speed APB domain is 50 MHz.
The devices embed a dedicated PLL (PLLI2S) which allows to achieve audio class
performance. In this case, the I2S master clock can generate all standard sampling
frequencies from 8 kHz to 192 kHz.

DocID028087 Rev 7 23/201

42
Functional overview STM32F412xE/G

3.16 Boot modes

At startup, boot pins are used to select one out of three boot options:
• Boot from user Flash memory
• Boot from system memory
• Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using one of the interface listed in the Table 3 or the USB OTG FS in device mode through
DFU (device firmware upgrade).

Table 3. Embedded bootloader interfaces

SPI1 SPI3 SPI4
I2C
USART1 USART2 USART3 I2C1 I2C2 I2C3 PA4/ PA15/ PE11/ CAN2 USB
FMP1
Package PA9/ PD6/ PB11/ PB6/ PF0/ PA8/ PA5/ PC10/ PE12/ PB5/ PA11
PB14/
PA10 PD5 PB10 PB7 PF1 PB4 PA6/ PC11/ PE13/ PB13 /P12
PB15
PA7 PC12 PE14

UFQFPN48 Y - - Y - Y Y Y - - Y Y
WLCSP64 Y - - Y - Y Y Y Y - Y Y
LQFP64 Y - - Y - Y Y Y Y - Y Y
LQFP100 Y Y - Y - Y Y Y Y Y Y Y
LQFP144 Y Y Y Y Y Y Y Y Y Y Y Y
UFBGA100 Y Y Y Y - Y Y Y Y Y Y Y
UFBGA144 Y Y Y Y Y Y Y Y Y Y Y Y

For more detailed information on the bootloader, refer to Application Note: AN2606,
STM32™ microcontroller system memory boot mode.

3.17 Power supply schemes

• VDD = 1.7 to 3.6 V: external power supply for I/Os with the internal supervisor
(POR/PDR) disabled, provided externally through VDD pins. Requires the use of an
external power supply supervisor connected to the VDD and NRST pins.
• VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, Reset blocks, RCs
and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively, with
decoupling technique.
Note: The VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply
supervisor (refer to Section 3.18.2: Internal reset OFF). Refer to Table 4: Regulator ON/OFF
and internal power supply supervisor availability to identify the packages supporting this
option.
• VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
• VDDUSB can be connected either to VDD or an external independent power supply (3.0
to 3.6 V) for USB transceivers.
For example, when device is powered at 1.8 V, an independent power supply 3.3V can
be connected to VDDUSB. When the VDDUSB is connected to a separated power supply,

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STM32F412xE/G Functional overview

it is independent from VDD or VDDA but it must be the last supply to be provided and the
first to disappear.
The following conditions VDDUSB must be respected:
– During power-on phase (VDD < VDD_MIN), VDDUSB should be always lower than
VDD
– During power-down phase (VDD < VDD_MIN), VDDUSB should be always lower than
VDD
– VDDUSB rising and falling time rate specifications must be respected.
– In operating mode phase, VDDUSB could be lower or higher than VDD:
– If USB is used, the associated GPIOs powered by VDDUSB are operating
between VDDUSB_MIN and VDDUSB_MAX.
– If USB is not used, the associated GPIOs powered by VDDUSB are operating
between VDD_MIN and VDD_MAX.

Figure 6. VDDUSB connected to an external independent power supply

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DocID028087 Rev 7 25/201

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Functional overview STM32F412xE/G

3.18 Power supply supervisor

3.18.1 Internal reset ON

This feature is available for VDD operating voltage range 1.8 V to 3.6 V.
On packages embedding the PDR_ON pin, the power supply supervisor is enabled by
holding PDR_ON high. On the other package, the power supply supervisor is always
enabled.
The device has an integrated power-on reset (POR) / power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, POR is always active, and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is
reached, the option byte loading process starts, either to confirm or modify default
thresholds, or to disable BOR permanently. Three BOR thresholds are available through
option bytes.
The device remains in reset mode when VDD is below a specified threshold, VPOR/PDR or
VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.

3.18.2 Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled by setting the PDR_ON pin to
low.
An external power supply supervisor should monitor VDD and should set the device in reset
mode when VDD is below 1.7 V. NRST should be connected to this external power supply
supervisor. Refer to Figure 7: Power supply supervisor interconnection with internal reset
OFF.

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Figure 7. Power supply supervisor interconnection with internal reset OFF(1)

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1. The PRD_ON pin is available only on WLCSP64, UFBGA100, UFBGA144 and LQFP144 packages.

A comprehensive set of power-saving mode allows to design low-power applications.

When the internal reset is OFF, the following integrated features are no longer supported:
• The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled.
• The brownout reset (BOR) circuitry must be disabled.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.

3.19 Voltage regulator

The regulator has three operating modes:
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down

3.19.1 Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. The WLCSP64 is available in two versions, one with the regulator
internally enabled and one with the regulator internally disabled. On all other packages, the
regulator is always enabled.

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There are three power modes configured by software when the regulator is ON:
• MR is used in the nominal regulation mode (With different voltage scaling in Run mode)
In Main regulator mode (MR mode), different voltage scaling are provided to reach the
best compromise between maximum frequency and dynamic power consumption.
• LPR is used in the Stop mode
The LP regulator mode is configured by software when entering Stop mode.
• Power-down is used in Standby mode.
The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost.
Depending on the package, one or two external ceramic capacitors should be connected on
the VCAP_1 and VCAP_2 pins. The VCAP_2 pin is only available for the 100 pins and 144 pins
packages.
All packages have the regulator ON feature.

3.19.2 Regulator OFF

The regulator is disabled by holding BYPASS_REG pin high.
This feature is available only on UFBGA100 and UFBGA144 packages, which feature the
BYPASS_REG pin. The WLCSP64 is available in two versions, one with a fixed enabled
regulator and one with a fixed disabled regulator (see Table 4: Regulator ON/OFF and
internal power supply supervisor availability and Section 8: Part numbering). The regulator
OFF mode allows to supply externally a V12 voltage source through VCAP_1 and VCAP_2
pins.
Since the internal voltage scaling is not managed internally, the external voltage value must
be aligned with the targeted maximum frequency.
The two 2.2 µF ceramic capacitors should be replaced by two 100 nF decoupling
capacitors.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.
In regulator OFF mode, the following features are no more supported:
• PA0 cannot be used as a GPIO pin since it allows to reset a part of the V12 logic power
domain which is not reset by the NRST pin.
• As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or pre-reset is required.

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Figure 8. Regulator OFF

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The following conditions must be respected:

• VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
• If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 9).
• Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see
Figure 10).
• If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a
reset must be asserted on PA0 pin.
Note: The minimum value of V12 depends on the maximum frequency targeted in the application.

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Figure 9. Startup in regulator OFF: slow VDD slope

power-down reset risen after VCAP_1/VCAP_2 stabilization

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Figure 10. Startup in regulator OFF mode: fast VDD slope

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3.19.3 Regulator ON/OFF and internal reset ON/OFF availability

Table 4. Regulator ON/OFF and internal power supply supervisor availability

Power supply Power supply
Package Regulator ON Regulator OFF
supervisor ON supervisor OFF

UFQFPN48 Yes No Yes No

Yes Yes
WLCSP64 Yes No
PDR_ON set to VDD PDR_ON set to VSS
WLCSP64 Yes Yes
No Yes
option P(1) PDR_ON set to VDD PDR_ON set to VSS
LQFP64 Yes No Yes No
LQFP100 Yes No Yes No
LQFP144 Yes No
Yes Yes
UFBGA100 BYPASS_REG set to BYPASS_REG set to
Yes Yes
VSS VDD
PDR_ON set to VDD PDR_ON set to VSS
Yes Yes
UFBGA144 BYPASS_REG set to BYPASS_REG set to
VSS VDD
1. Refer to Section 8: Part numbering.

3.20 Real-time clock (RTC) and backup registers

The backup domain includes:
• The real-time clock (RTC)
• 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binary-
coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC features a reference clock detection, a more precise
second source clock (50 or 60 Hz) can be used to enhance the calendar precision. The RTC
provides a programmable alarm and programmable periodic interrupts with wakeup from
Stop and Standby modes. The sub-seconds value is also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary auto-reload downcounter with programmable resolution is available
and allows automatic wakeup and periodic alarms from every 120 µs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The backup registers are 32-bit registers used to store 80 byte of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,

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or when the device wakes up from the Standby mode (see Section 3.21: Low-power
modes).
Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.
The RTC and backup registers are supplied through a switch that is powered either from the
VDD supply when present or from the VBAT pin.

3.21 Low-power modes

The devices support three low-power modes to achieve the best compromise between low
power consumption, short startup time and available wakeup sources:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
To further reduce the power consumption, the Flash memory can be switched off
before entering in Sleep mode. Note that this requires a code execution from the RAM.
• Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low-power mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm/ wakeup/
tamper/ time stamp events).
• Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on one of the WKUP pins, or an RTC alarm/ wakeup/ tamper/time stamp
event occurs.
Standby mode is not supported when the embedded voltage regulator is bypassed and
the 1.2 V domain is controlled by an external power.

3.22 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external
super-capacitor, or from VDD when no external battery and an external super-capacitor are
present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC and the backup registers.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation. When PDR_ON pin is not connected to VDD (internal

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Reset OFF), the VBAT functionality is no more available and VBAT pin should be connected
to VDD.

3.23 Timers and watchdogs

The devices embed two advanced-control timer, ten general-purpose timers, two basic
timers, two watchdog timers and one SysTick timer.
All timer counters can be frozen in debug mode.
Table 5 compares the features of the advanced-control and general-purpose timers.

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Table 5. Timer feature comparison

Max. Max.
DMA Capture/
Timer Counter Counter Prescaler Complemen- interface timer
Timer request compare
type resolution type factor tary output clock clock
generation channels
(MHz) (MHz)

Any
Up, integer
Advance TIM1,
16-bit Down, between 1 Yes 4 Yes 100 100
d-control TIM8
Up/down and
65536
Any
Up, integer
TIM2,
32-bit Down, between 1 Yes 4 No 50 100
TIM5
Up/down and
65536
Any
Up, integer
TIM3,
16-bit Down, between 1 Yes 4 No 50 100
TIM4
Up/down and
65536
Any
integer
TIM9 16-bit Up between 1 No 2 No 100 100
and
General 65536
purpose Any
integer
TIM10,
16-bit Up between 1 No 1 No 100 100
TIM11
and
65536
Any
integer
TIM12 16-bit Up between 1 No 2 No 50 100
and
65536
Any
integer
TIM13,
16-bit Up between 1 No 1 No 50 100
TIM14
and
65536
Any
integer
Basic TIM6,
16-bit Up between 1 Yes 0 No 50 100
timers TIM7
and
65536

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3.23.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1/8) can be seen as three-phase PWM generator
multiplexed on 4 independent channels. They have complementary PWM outputs with
programmable inserted dead times. They can also be considered as complete general-
purpose timers. Their 4 independent channels can be used for:
• Input capture
• Output compare
• PWM generation (edge- or center-aligned modes)
• One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as a 16-bit PWM generator, they have full modulation capability
(0-100%).
The advanced-control timers can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.

3.23.2 General-purpose timers (TIMx)

There are ten synchronizable general-purpose timers embedded in the STM32F412xE/G
(see Table 5 for differences).
• TIM2, TIM3, TIM4, TIM5
The STM32F412xE/G devices include 4 full-featured general-purpose timers: TIM2.
TIM3, TIM4 and TIM5. TIM2 and TIM5 timers are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler while TIM3 and TIM4 timers are based on a 16-
bit auto-reload up/downcounter plus a 16-bit prescaler. They all features four
independent channels for input capture/output compare, PWM or one-pulse mode
output. This gives up to 15 input capture/output compare/PWMs
TIM2. TIM3, TIM4 and TIM5 general-purpose timers can operate together or in
conjunction with the other general-purpose timers and TIM1 advanced-control timer via
the Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM output.
TIM2. TIM3, TIM4 and TIM5 channels have independent DMA request generation.
They are capable of handling quadrature (incremental) encoder signals and the digital
outputs from 1 to 4 hall-effect sensors.
• TIM9, TIM10, TIM11, TIM12, TIM13 and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13 and TIM14 feature one independent channel, whereas TIM9 and
TIM12 have two independent channels for input capture/output compare, PWM or one-
pulse mode output. They can be synchronized with TIM2. TIM3, TIM4 and TIM5 full-
featured general-purpose timers or used as simple time bases.

3.23.3 Basic timer (TIM6, TIM7)

TIM6 and TIM7 timers are basic 16-bit timers. They support independent DMA request
generation.

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3.23.4 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.

3.23.5 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.23.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
• A 24-bit downcounter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source.

3.24 Inter-integrated circuit interface (I2C)

The devices feature up to four I2C bus interfaces which can operate in multimaster and
slave modes:
• One I2C interface supports the Standard mode (up to 100 kHz), Fast-mode (up to
400 kHz) modes and Fast-mode plus (up to 1 MHz).
• Three I2C interfaces support the Standard mode (up to 100 KHz) and the Fast mode
(up to 400 KHz). Their frequency can be increased up to 1 MHz. For more details on
the complete solution, refer to the nearest STMicroelectronics sales office.
All I2C interfaces features 7/10-bit addressing mode and 7-bit addressing mode (as slave)
and embed a hardware CRC generation/verification.
They can be served by DMA and they support SMBus 2.0/PMBus.
The devices also include programmable analog and digital noise filters (see Table 6).

Table 6. Comparison of I2C analog and digital filters

Analog filter Digital filter

Pulse width of
≥ 50 ns Programmable length from 1 to 15 I2C peripheral clocks
suppressed spikes

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3.25 Universal synchronous/asynchronous receiver transmitters

(USART)
The devices embed four universal synchronous/asynchronous receiver transmitters
(USART1, USART2, USART3 and USART6).
These four interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. USART1 and USART6 interfaces are able to
communicate at speeds of up to 12.5 Mbit/s. USART2 and USART3 interfaces
communicate at up to 6.25 bit/s.
All USART interfaces provide hardware management of the CTS and RTS signals, Smart
Card mode (ISO 7816 compliant) and SPI-like communication capability. All interfaces can
be served by the DMA controller.

Table 7. USART feature comparison

Max. baud Max. baud
USART Standard Modem SPI Smartcard rate in Mbit/s rate in Mbit/s APB
LIN irDA
name features (RTS/CTS) master (ISO 7816) (oversampling (oversampling mapping
by 16) by 8)

APB2
USART1 X X X X X X 6.25 12.5 (max.
100 MHz)
APB1
USART2 X X X X X X 3.12 6.25 (max.
50 MHz)
APB1
USART3
(1) X X X X X X 3.12 6.25 (max.
50 MHz)
APB2
USART6 X X X X X X 6.25 12.5 (max.
100 MHz)
1. The RX is not available for the UFQFPN48 package.

3.26 Serial peripheral interface (SPI)

The devices feature five SPIs in slave and master modes in full-duplex and simplex
communication modes. SPI1, SPI4 and SPI5 can communicate at up to 50 Mbit/s, SPI2 and
SPI3 can communicate at up to 25 Mbit/s. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interfaces can be configured to operate in TI mode for communications in master
mode and slave mode.

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3.27 Inter-integrated sound (I2S)

Five standard I2S interfaces (multiplexed with SPI1 to SPI5) are available. They can be
operated in master or slave mode, in simplex communication mode, and full duplex mode
for I2S2 and I2S3. All I2S interfaces can be configured to operate with a 16-/32-bit resolution
as an input or output channel. I2Sx audio sampling frequencies from 8 kHz up to 192 kHz
are supported. When either or both of the I2S interfaces is/are configured in master mode,
the master clock can be output to the external DAC/CODEC at 256 times the sampling
frequency.
All I2Sx interfaces can be served by the DMA controller.

3.28 Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S applications. It allows to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
Different sources can be selected for the I2S master clock of the APB1 and the I2S master
clock of the APB2. This gives the flexibility to work with two different audio sampling
frequencies. The different possible sources are the main PLL, the PLLI2S, HSE or HSI
clocks or an external clock provided through a pin (external PLL or Codec output)
The PLLI2S configuration can be modified to manage an I2S sample rate change without
disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.

3.29 Digital filter for sigma-delta modulators (DFSDM)

The device embeds one DFSDM with 2 digital filters modules and 4 external input serial
channels (transceivers) or alternately 2 internal parallel inputs support.
The amount of filters defines the number of conversions which can be performed
simultaneously.
The DFSDM peripheral is dedicated to interface the external Σ∆ modulators to
microcontroller and then to perform digital filtering of the received data streams (which
represent analog value on Σ∆ modulators inputs). DFSDM can also interface PDM (Pulse
Density Modulation) microphones and perform PDM to PCM conversion and filtering in
hardware. DFSDM features optional parallel data stream inputs from microcontrollers
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.

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The DFSDM peripheral supports:

• 4 multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0...20 MHz
• alternative inputs from 4 internal digital parallel channels (up to 16 bit input resolution):
– internal sources: device memory data streams (DMA)
• 2 digital filter modules with adjustable digital signal processing:
– Sincx filter: filter order/type (1...5), oversampling ratio (up to 1...1024)
– integrator: oversampling ratio (1...256)
• up to 24-bit output data resolution, signed output data format
• automatic data offset correction (offset stored in register by user)
• continuous or single conversion
• start-of-conversion triggered by
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM1FLT0)
• analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1...3, oversampling ratio = 1...32
– input from digital output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
• short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1...256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
• break signal generation on analog watchdog event or on short circuit detector event
• extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
• DMA capability to read the final conversion data
• interrupts: end of conversion, overrun, analog watchdog, short circuit input serial
channel clock absence
• “regulator” or injected” conversions:
– “regular” conversions can be requested at any time or even in continuous mode
without having any impact on the timing of “injected” conversions
– “injected” conversions for precise timing and with high conversion priority.

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3.30 Secure digital input/output interface (SDIO)

An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface allows data transfer at up to 50 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.
In addition to SD/SDIO/MMC/eMMC, this interface is fully compliant with the CE-ATA digital
protocol Rev1.1.

3.31 Controller area network (bxCAN)

The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 byte of SRAM are allocated for each CAN.

3.32 Universal serial bus on-the-go full-speed (USB_OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The Battery Charging Detection
(BCD) can detect and identify the type of port, it is connected to (standard USB or charger).
The type of charging is also detected: Dedicated Charging Port (DCP), Charging
Downstream Port (CDP) and Standard Downstream Port (SDP). Some packages provide a
dedicated USB power rail allowing a different supply for the USB and for the rest of the chip.
For instance the chip can be powered with the minimum specified supply and the USB
running at the level defined by the standard. The major features are:
• Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
• Supports the session request protocol (SRP) and host negotiation protocol (HNP)
• 6 bidirectional endpoints
• 12 host channels with periodic OUT support
• HNP/SNP/IP inside (no need for any external resistor)
• For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected
• Link Power Management (LPM)
• Battery Charging Detection (BCD) supporting DCP, CDP and SDP

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STM32F412xE/G Functional overview

3.33 Random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.

3.34 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 100 MHz.

3.35 Analog-to-digital converter (ADC)

One 12-bit analog-to-digital converter is embedded and shares up to 16 external channels,
performing conversions in the single-shot or scan mode. In scan mode, automatic
conversion is performed on a selected group of analog inputs.
The ADC can be served by the DMA controller. An analog watchdog feature allows very
precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4 or TIM5 timer.

3.36 Temperature sensor

The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally
connected to the ADC_IN18 input channel which is used to convert the sensor output
voltage into a digital value. Refer to the reference manual for additional information.
As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.

3.37 Serial wire JTAG debug port (SWJ-DP)

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

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42
Functional overview STM32F412xE/G

3.38 Embedded Trace Macrocell™

The Arm Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F412xE/G through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. The TPA is connected to a host computer using any high-speed
channel available. Real-time instruction and data flow activity can be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.

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STM32F412xE/G Pinouts and pin description

4 Pinouts and pin description

4.1 WLSCP64 pinout description

Figure 11. STM32F412xE/G WLCSP64 pinout

       

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+ 3$ 9'' 3$ 3% 3% 9&$3B 966 9''

06Y9

1. The above figure shows the package bump side.

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73
Pinouts and pin description STM32F412xE/G

4.2 UFQFPN48 pinout description

Figure 12. STM32F412xE/G UFQFPN48 pinout

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069

1. The above figure shows the package top view.

44/201 DocID028087 Rev 7

STM32F412xE/G Pinouts and pin description

4.3 LQFP64 pinout description

Figure 13. STM32F412xE/G LQFP64 pinout

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069

1. The above figure shows the package top view.

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73
Pinouts and pin description STM32F412xE/G

4.4 LQFP100 pinout description

Figure 14. STM32F412xE/G LQFP100 pinout

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-36

1. The above figure shows the package top view.

46/201 DocID028087 Rev 7

STM32F412xE/G Pinouts and pin description

4.5 LQFP144 pinout description

Figure 15. STM32F412xE/G LQFP144 pinout

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06Y9

1. The above figure shows the package top view.

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73
Pinouts and pin description STM32F412xE/G

4.6 UFBGA100 pinout description

Figure 16. STM32F412xE/G UFBGA100 pinout

           

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06Y9

1. The above figure shows the package top view.

48/201 DocID028087 Rev 7

STM32F412xE/G Pinouts and pin description

4.7 UFBGA144 pinout description

Figure 17. STM32F412xE/G UFBGA144 pinout

           

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06Y9

1. The above figure shows the package top view.

4.8 Pin definition

Table 8. Legend/abbreviations used in the pinout table
Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input/ output pin
FT 5 V tolerant I/O
TC Standard 3.3 V I/O
I/O structure
B Dedicated BOOT0 pin
NRST Bidirectional reset pin with embedded weak pull-up resistor

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

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73
Pinouts and pin description STM32F412xE/G

Table 8. Legend/abbreviations used in the pinout table (continued)

Name Abbreviation Definition

Alternate
Functions selected through GPIOx_AFR registers
functions

Additional
Functions directly selected/enabled through peripheral registers
functions

Table 9. STM32F412xE/G pin definition

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144

(function Pin I/O Additional

WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TRACECLK,
SPI4_SCK/I2S4_CK,
SPI5_SCK/I2S5_CK,
- - - 1 B2 A3 1 PE2 I/O FT - -
QUADSPI_BK1_IO2,
FSMC_A23,
EVENTOUT
TRACED0, FSMC_A19,
- - - 2 A1 A2 2 PE3 I/O FT - -
EVENTOUT
TRACED1,
SPI4_NSS/I2S4_WS,
SPI5_NSS/I2S5_WS,
- - - 3 B1 B2 3 PE4 I/O FT - -
DFSDM1_DATIN3,
FSMC_A20,
EVENTOUT
TRACED2, TIM9_CH1,
SPI4_MISO,
SPI5_MISO,
- - - 4 C2 B3 4 PE5 I/O FT - -
DFSDM1_CKIN3,
FSMC_A21,
EVENTOUT
TRACED3, TIM9_CH2,
SPI4_MOSI/I2S4_SD,
- - - 5 D2 B4 5 PE6 I/O FT - SPI5_MOSI/I2S5_SD, -
FSMC_A22,
EVENTOUT
1 1 B7 6 E2 C2 6 VBAT S - - - VBAT
(2)(3)
2 2 B8 7 C1 A1 7 PC13 I/O FT EVENTOUT TAMP_1
PC14- (2)(3)(4)
3 3 C8 8 D1 B1 8 I/O FT EVENTOUT OSC32_IN
OSC32_IN

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

PC15-
(2)(4) OSC32_
4 4 C7 9 E1 C1 9 OSC32_ I/O FT EVENTOUT
OUT
OUT
I2C2_SDA, FSMC_A0,
- - - - - C3 10 PF0 I/O FT - -
EVENTOUT
I2C2_SCL, FSMC_A1,
- - - - - C4 11 PF1 I/O FT - -
EVENTOUT
I2C2_SMBA, FSMC_A2,
- - - - - D4 12 PF2 I/O FT - -
EVENTOUT
TIM5_CH1, FSMC_A3,
- - - - - E2 13 PF3 I/O FT - -
EVENTOUT
TIM5_CH2, FSMC_A4,
- - - - - E3 14 PF4 I/O FT - -
EVENTOUT
TIM5_CH3, FSMC_A5,
- - - - - E4 15 PF5 I/O FT - -
EVENTOUT
- - - 10 F2 D2 16 VSS S - - - -

- - - 11 G2 D3 17 VDD S - - - -
TRACED0, TIM10_CH1,
- - - - - F3 18 PF6 I/O FT - QUADSPI_BK1_IO3, -
EVENTOUT
TRACED1, TIM11_CH1,
- - - - - F2 19 PF7 I/O FT - QUADSPI_BK1_IO2, -
EVENTOUT
TIM13_CH1,
- - - - - G3 20 PF8 I/O FT - QUADSPI_BK1_IO0, -
EVENTOUT
TIM14_CH1,
- - - - - G2 21 PF9 I/O FT - QUADSPI_BK1_IO1, -
EVENTOUT
TIM1_ETR, TIM5_CH4,
- - - - - G1 22 PF10 I/O FT - -
EVENTOUT
PH0 - (4)
5 5 D8 12 F1 D1 23 I/O FT EVENTOUT OSC_IN
OSC_IN
PH1 - (4)
6 6 E8 13 G1 E1 24 I/O FT EVENTOUT OSC_OUT
OSC_OUT
7 7 D7 14 H2 F1 25 NRST I/O RST - - NRST

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Pinouts and pin description STM32F412xE/G

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

ADC1_10,
- 8 D5 15 H1 H1 26 PC0 I/O FT - EVENTOUT
WKUP2
ADC1_11,
- 9 F8 16 J2 H2 27 PC1 I/O FT - EVENTOUT
WKUP3
SPI2_MISO,
I2S2ext_SD,
- 10 E7 17 J3 H3 28 PC2 I/O FT - DFSDM1_CKOUT, ADC1_12
FSMC_NWE,
EVENTOUT
SPI2_MOSI/I2S2_SD,
- 11 D6 18 K2 H4 29 PC3 I/O FT - ADC1_13
FSMC_A0, EVENTOUT
- - - 19 - - 30 VDD S - - - -
VSSA/
8 12 G8 20 - - 31 S - - - -
VREF
- - - - J1 J1 - VSSA S - - - -

- - - - K1 K1 - VREF- S - - - -
VDDA/
9 13 F7 - - - - S - - - -
VREF+
- - - 21 L1 L1 32 VREF+ S - - - -

- - - 22 M1 M1 33 VDDA S - - - -
TIM2_CH1/TIM2_ETR,
TIM5_CH1, TIM8_ETR, ADC1_0,
10 14 E6 23 L2 J2 34 PA0 I/O FT -
USART2_CTS, WKUP1
EVENTOUT
TIM2_CH2, TIM5_CH2,
SPI4_MOSI/I2S4_SD,
11 15 G7 24 M2 K2 35 PA1 I/O FT - USART2_RTS, ADC1_1
QUADSPI_BK1_IO3,
EVENTOUT
TIM2_CH3, TIM5_CH3,
TIM9_CH1, I2S2_CKIN,
12 16 H8 25 K3 L2 36 PA2 I/O FT - USART2_TX, ADC1_2
FSMC_D4/FSMC_DA4,
EVENTOUT

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM2_CH4, TIM5_CH4,
TIM9_CH2, I2S2_MCK,
13 17 F6 26 L3 M2 37 PA3 I/O FT - USART2_RX, ADC1_3
FSMC_D5/FSMC_DA5,
EVENTOUT
- 18 - 27 - G4 38 VSS S - - - -
BYPASS_
- - - - E3 H5 - I FT - - -
REG
- 19 H7 28 - F4 39 VDD S - - - -
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
USART2_CK,
14 20 G6 29 M3 J3 40 PA4 I/O FT - ADC1_4
DFSDM1_DATIN1,
FSMC_D6/FSMC_DA6,
EVENTOUT
TIM2_CH1/TIM2_ETR,
TIM8_CH1N,
SPI1_SCK/I2S1_CK,
15 21 F5 30 K4 K3 41 PA5 I/O FT - ADC1_5
DFSDM1_CKIN1,
FSMC_D7/FSMC_DA7,
EVENTOUT
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN,
SPI1_MISO, I2S2_MCK,
16 22 H6 31 L4 L3 42 PA6 I/O FT - TIM13_CH1, ADC1_6
QUADSPI_BK2_IO0,
SDIO_CMD,
EVENTOUT
TIM1_CH1N,
TIM3_CH2,
TIM8_CH1N,
17 23 E5 32 M4 M3 43 PA7 I/O FT - SPI1_MOSI/I2S1_SD, ADC1_7
TIM14_CH1,
QUADSPI_BK2_IO1,
EVENTOUT
I2S1_MCK,
QUADSPI_BK2_IO2,
- 24 E4 33 K5 J4 44 PC4 I/O FT - ADC1_14
FSMC_NE4,
EVENTOUT

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Pinouts and pin description STM32F412xE/G

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

I2CFMP1_SMBA,
USART3_RX,
- 25 G5 34 L5 K4 45 PC5 I/O FT - QUADSPI_BK2_IO3, ADC1_15
FSMC_NOE,
EVENTOUT
TIM1_CH2N,
TIM3_CH3,
18 26 H5 35 M5 L4 46 PB0 I/O FT - TIM8_CH2N, ADC1_8
SPI5_SCK/I2S5_CK,
EVENTOUT
TIM1_CH3N,
TIM3_CH4,
TIM8_CH3N,
19 27 F4 36 M6 M4 47 PB1 I/O FT - SPI5_NSS/I2S5_WS, ADC1_9
DFSDM1_DATIN0,
QUADSPI_CLK,
EVENTOUT
DFSDM1_CKIN0,
20 28 G4 37 L6 J5 48 PB2 I/O FT - QUADSPI_CLK, BOOT1
EVENTOUT
- - - - - M5 49 PF11 I/O FT - TIM8_ETR, EVENTOUT -
TIM8_BKIN, FSMC_A6,
- - - - - L5 50 PF12 I/O FT - -
EVENTOUT
- - - - - - 51 VSS S - - - -

- - - - - G5 52 VDD S - - - -
I2CFMP1_SMBA,
- - - - - K5 53 PF13 I/O FT - -
FSMC_A7, EVENTOUT
I2CFMP1_SCL,
- - - - - M6 54 PF14 I/O FT - -
FSMC_A8, EVENTOUT
I2CFMP1_SDA,
- - - - - L6 55 PF15 I/O FT - -
FSMC_A9, EVENTOUT
CAN1_RX, FSMC_A10,
- - - - - K6 56 PG0 I/O FT - -
EVENTOUT
CAN1_TX, FSMC_A11,
- - - - - J6 57 PG1 I/O FT - -
EVENTOUT

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM1_ETR,
DFSDM1_DATIN2,
- - - 38 M7 M7 58 PE7 I/O FT - QUADSPI_BK2_IO0, -
FSMC_D4/FSMC_DA4,
EVENTOUT
TIM1_CH1N,
DFSDM1_CKIN2,
- - - 39 L7 L7 59 PE8 I/O FT - QUADSPI_BK2_IO1, -
FSMC_D5/FSMC_DA5,
EVENTOUT
TIM1_CH1,
DFSDM1_CKOUT,
- - - 40 M8 K7 60 PE9 I/O FT - QUADSPI_BK2_IO2, -
FSMC_D6/FSMC_DA6,
EVENTOUT
- - - - - - 61 VSS S - - - -

- - - - - G6 62 VDD S - - - -
TIM1_CH2N,
QUADSPI_BK2_IO3,
- - - 41 L8 J7 63 PE10 I/O FT - -
FSMC_D7/FSMC_DA7,
EVENTOUT
TIM1_CH2,
SPI4_NSS/I2S4_WS,
- - - 42 M9 H8 64 PE11 I/O FT - SPI5_NSS/I2S5_WS, -
FSMC_D8/FSMC_DA8,
EVENTOUT
TIM1_CH3N,
SPI4_SCK/I2S4_CK,
- - - 43 L9 J8 65 PE12 I/O FT - SPI5_SCK/I2S5_CK, -
FSMC_D9/FSMC_DA9,
EVENTOUT
TIM1_CH3, SPI4_MISO,
SPI5_MISO,
- - - 44 M10 K8 66 PE13 I/O FT - -
FSMC_D10/FSMC_DA1
0, EVENTOUT
TIM1_CH4,
SPI4_MOSI/I2S4_SD,
- - - 45 M11 L8 67 PE14 I/O FT - SPI5_MOSI/I2S5_SD, -
FSMC_D11/FSMC_DA1
1, EVENTOUT

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Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM1_BKIN,
- - - 46 M12 M8 68 PE15 I/O FT - FSMC_D12/FSMC_DA1 -
2, EVENTOUT
TIM2_CH3, I2C2_SCL,
SPI2_SCK/I2S2_CK,
I2S3_MCK,
21 29 H4 47 L10 M9 69 PB10 I/O FT - -
USART3_TX,
I2CFMP1_SCL,
SDIO_D7, EVENTOUT
TIM2_CH4, I2C2_SDA,
I2S2_CKIN,
- - - - K9 M10 70 PB11 I/O FT - -
USART3_RX,
EVENTOUT
22 30 H3 48 L11 H7 71 VCAP_1 S - - - -

23 31 H2 49 F12 H6 - VSS S - - - -

24 32 H1 50 G12 G7 72 VDD S - - - -
TIM1_BKIN,
I2C2_SMBA,
SPI2_NSS/I2S2_WS,
SPI4_NSS/I2S4_WS,
SPI3_SCK/I2S3_CK,
25 33 G3 51 L12 M11 73 PB12 I/O FT - -
USART3_CK,
CAN2_RX,
DFSDM1_DATIN1,
FSMC_D13/FSMC_DA1
3, EVENTOUT
TIM1_CH1N,
I2CFMP1_SMBA,
SPI2_SCK/I2S2_CK,
SPI4_SCK/I2S4_CK,
26 34 G2 52 K12 M12 74 PB13 I/O FT - -
USART3_CTS,
CAN2_TX,
DFSDM1_CKIN1,
EVENTOUT

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM1_CH2N,
TIM8_CH2N,
I2CFMP1_SDA,
SPI2_MISO,
I2S2ext_SD,
27 35 G1 53 K11 L11 75 PB14 I/O FT - -
USART3_RTS,
DFSDM1_DATIN2,
TIM12_CH1,
FSMC_D0/FSMC_DA0,
SDIO_D6, EVENTOUT
RTC_50Hz,
TIM1_CH3N,
TIM8_CH3N,
I2CFMP1_SCL,
28 36 F2 54 K10 L12 76 PB15 I/O FT - -
SPI2_MOSI/I2S2_SD,
DFSDM1_CKIN2,
TIM12_CH2, SDIO_CK,
EVENTOUT
USART3_TX,
FSMC_D13/
- - - 55 - L9 77 PD8 I/O FT - -
FSMC_DA13,
EVENTOUT
USART3_RX,
- - - 56 K8 K9 78 PD9 I/O FT - FSMC_D14/FSMC_DA1 -
4, EVENTOUT
USART3_CK,
- - - 57 J12 J9 79 PD10 I/O FT - FSMC_D15/FSMC_DA1 -
5, EVENTOUT
I2CFMP1_SMBA,
USART3_CTS,
- - - 58 J11 H9 80 PD11 I/O FT - QUADSPI_BK1_IO0, -
FSMC_A16,
EVENTOUT
TIM4_CH1,
I2CFMP1_SCL,
USART3_RTS,
- - - 59 J10 L10 81 PD12 I/O FT - -
QUADSPI_BK1_IO1,
FSMC_A17,
EVENTOUT

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Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM4_CH2,
I2CFMP1_SDA,
- - - 60 H12 K10 82 PD13 I/O FT - QUADSPI_BK1_IO3, -
FSMC_A18,
EVENTOUT
- - - - - G8 83 VSS S - - - -

- - - - - F8 84 VDD S - - - -
TIM4_CH3,
I2CFMP1_SCL,
- - - 61 H11 K11 85 PD14 I/O FT - -
FSMC_D0/FSMC_DA0,
EVENTOUT
TIM4_CH4,
I2CFMP1_SDA,
- - - 62 H10 K12 86 PD15 I/O FT - -
FSMC_D1/FSMC_DA1,
EVENTOUT
FSMC_A12,
- - - - - J12 87 PG2 I/O FT - -
EVENTOUT
FSMC_A13,
- - - - - J11 88 PG3 I/O FT - -
EVENTOUT
FSMC_A14,
- - - - - J10 89 PG4 I/O FT - -
EVENTOUT
FSMC_A15,
- - - - - H12 90 PG5 I/O FT - -
EVENTOUT
QUADSPI_BK1_NCS,
- - - - - H11 91 PG6 I/O FT - -
EVENTOUT
USART6_CK,
- - - - - H10 92 PG7 I/O FT - -
EVENTOUT
USART6_RTS,
- - - - - G11 93 PG8 I/O FT - -
EVENTOUT
- - - - - - 94 VSS S - - - -

- - - - - F10 - VDD S -

- - - - - C11 95 VDDUSB S - - - -

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM3_CH1, TIM8_CH1,
I2CFMP1_SCL,
I2S2_MCK,
- 37 F1 63 E12 G12 96 PC6 I/O FT - DFSDM1_CKIN3, -
USART6_TX,
FSMC_D1/FSMC_DA1,
SDIO_D6, EVENTOUT
TIM3_CH2, TIM8_CH2,
I2CFMP1_SDA,
SPI2_SCK/I2S2_CK,
- 38 E1 64 E11 F12 97 PC7 I/O FT - I2S3_MCK, -
USART6_RX,
DFSDM1_DATIN3,
SDIO_D7, EVENTOUT
TIM3_CH3, TIM8_CH3,
USART6_CK,
- 39 F3 65 E10 F11 98 PC8 I/O FT - -
QUADSPI_BK1_IO2,
SDIO_D0, EVENTOUT
MCO_2, TIM3_CH4,
TIM8_CH4, I2C3_SDA,
- 40 E2 66 D12 E11 99 PC9 I/O FT - I2S2_CKIN, -
QUADSPI_BK1_IO0,
SDIO_D1, EVENTOUT
MCO_1, TIM1_CH1,
I2C3_SCL,
29 41 E3 67 D11 E12 100 PA8 I/O FT - USART1_CK, -
USB_FS_SOF,
SDIO_D1, EVENTOUT
TIM1_CH2,
I2C3_SMBA,
30 42 D1 68 D10 D12 101 PA9 I/O FT - USART1_TX, -
USB_FS_VBUS,
SDIO_D2, EVENTOUT
TIM1_CH3,
SPI5_MOSI/I2S5_SD,
31 43 D2 69 C12 D11 102 PA10 I/O FT - USART1_RX, -
USB_FS_ID,
EVENTOUT

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Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM1_CH4, SPI4_MISO,
USART1_CTS,
USART6_TX,
32 44 D3 70 B12 C12 103 PA11 I/O FT - -
CAN1_RX,
USB_FS_DM,
EVENTOUT
TIM1_ETR, SPI5_MISO,
USART1_RTS,
USART6_RX,
33 45 C1 71 A12 B12 104 PA12 I/O FT - -
CAN1_TX,
USB_FS_DP,
EVENTOUT
JTMS-SWDIO,
34 46 C2 72 A11 A12 105 PA13 I/O FT - -
EVENTOUT
- - - 73 C11 G9 106 VCAP_2 S - - - -

35 47 B1 74 F11 G10 107 VSS S - - - -

36 48 - 75 G11 - - VDD S - - - -

- - A1 - - F9 108 VDD S - - - -
JTCK-SWCLK,
37 49 B2 76 A10 A11 109 PA14 I/O FT - -
EVENTOUT
JTDI,
TIM2_CH1/TIM2_ETR,
SPI1_NSS/I2S1_WS,
38 50 A2 77 A9 A10 110 PA15 I/O FT - -
SPI3_NSS/I2S3_WS,
USART1_TX,
EVENTOUT
SPI3_SCK/I2S3_CK,
USART3_TX,
- 51 C3 78 B11 B11 111 PC10 I/O FT - -
QUADSPI_BK1_IO1,
SDIO_D2, EVENTOUT
I2S3ext_SD,
SPI3_MISO,
USART3_RX,
- 52 B3 79 C10 B10 112 PC11 I/O FT - -
QUADSPI_BK2_NCS,
FSMC_D2/FSMC_DA2,
SDIO_D3, EVENTOUT

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

SPI3_MOSI/I2S3_SD,
USART3_CK,
- 53 A3 80 B10 C10 113 PC12 I/O FT - -
FSMC_D3/FSMC_DA3,
SDIO_CK, EVENTOUT
CAN1_RX,
- - - 81 C9 E10 114 PD0 I/O FT - FSMC_D2/FSMC_DA2, -
EVENTOUT
CAN1_TX,
- - - 82 B9 D10 115 PD1 I/O FT - FSMC_D3/FSMC_DA3, -
EVENTOUT
TIM3_ETR,
FSMC_NWE,
- 54 A4 83 C8 E9 116 PD2 I/O FT - -
SDIO_CMD,
EVENTOUT
TRACED1,
SPI2_SCK/I2S2_CK,
DFSDM1_DATIN0,
- - - 84 B8 D9 117 PD3 I/O FT - USART2_CTS, -
QUADSPI_CLK,
FSMC_CLK,
EVENTOUT
DFSDM1_CKIN0,
USART2_RTS,
- - - 85 B7 C9 118 PD4 I/O FT - -
FSMC_NOE,
EVENTOUT
USART2_TX,
- - - 86 A6 B9 119 PD5 I/O FT - FSMC_NWE, -
EVENTOUT
- - - - - E7 120 VSS S - - - -

- - - - - F7 121 VDD S - - - -
SPI3_MOSI/I2S3_SD,
DFSDM1_DATIN1,
- - - 87 B6 A8 122 PD6 I/O FT - USART2_RX, -
FSMC_NWAIT,
EVENTOUT
DFSDM1_CKIN1,
USART2_CK,
- - - 88 A5 A9 123 PD7 I/O FT - -
FSMC_NE1,
EVENTOUT

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Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

USART6_RX,
QUADSPI_BK2_IO2,
- - - - - E8 124 PG9 I/O FT - -
FSMC_NE2,
EVENTOUT
FSMC_NE3,
- - - - - D8 125 PG10 I/O FT - -
EVENTOUT
- - - - - C8 126 PG11 I/O FT - CAN2_RX, EVENTOUT -
USART6_RTS,
- - - - - B8 127 PG12 I/O FT - CAN2_TX, FSMC_NE4, -
EVENTOUT
TRACED2,
USART6_CTS,
- - - - - D7 128 PG13 I/O FT - -
FSMC_A24,
EVENTOUT
TRACED3,
USART6_TX,
- - - - - C7 129 PG14 I/O FT - QUADSPI_BK2_IO3, -
FSMC_A25,
EVENTOUT
- - - - - - 130 VSS S - - - -

- - - - - F6 131 VDD S - - - -
USART6_CTS,
- - - - - B7 132 PG15 I/O FT - -
EVENTOUT
JTDO-SWO,
TIM2_CH2,
I2CFMP1_SDA,
39 55 A5 89 A8 A7 133 PB3 I/O FT - SPI1_SCK/I2S1_CK, -
SPI3_SCK/I2S3_CK,
USART1_RX,
I2C2_SDA, EVENTOUT
JTRST, TIM3_CH1,
SPI1_MISO,
40 56 B4 90 A7 A6 134 PB4 I/O FT - SPI3_MISO, -
I2S3ext_SD, I2C3_SDA,
SDIO_D0, EVENTOUT

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STM32F412xE/G Pinouts and pin description

Table 9. STM32F412xE/G pin definition (continued)

Pin Number

Pin name
UFQFPN48

UFBGA100

UFBGA144
(function Pin I/O Additional
WLCSP64

LQFP100

LQFP144
LQFP64

Notes Alternate functions

after type structure functions
(1)
reset)

TIM3_CH2,
I2C1_SMBA,
SPI1_MOSI/I2S1_SD,
41 57 C4 91 C5 B6 135 PB5 I/O FT - -
SPI3_MOSI/I2S3_SD,
CAN2_RX, SDIO_D3,
EVENTOUT
TIM4_CH1, I2C1_SCL,
USART1_TX,
42 58 B5 92 B5 C6 136 PB6 I/O FT - CAN2_TX, -
QUADSPI_BK1_NCS,
SDIO_D0, EVENTOUT
TIM4_CH2, I2C1_SDA,
43 59 A6 93 B4 D6 137 PB7 I/O FT - USART1_RX, -
FSMC_NL, EVENTOUT
44 60 D4 94 A4 D5 138 BOOT0 I B - - VPP
TIM4_CH3,
TIM10_CH1, I2C1_SCL,
45 61 C5 95 A3 C5 139 PB8 I/O FT - SPI5_MOSI/I2S5_SD, -
CAN1_RX, I2C3_SDA,
SDIO_D4, EVENTOUT
TIM4_CH4,
TIM11_CH1, I2C1_SDA,
46 62 B6 96 B3 B5 140 PB9 I/O FT - SPI2_NSS/I2S2_WS, -
CAN1_TX, I2C2_SDA,
SDIO_D5, EVENTOUT
TIM4_ETR,
- - - 97 C3 A5 141 PE0 I/O FT - FSMC_NBL0, -
EVENTOUT
FSMC_NBL1,
- - - 98 A2 A4 142 PE1 I/O FT - -
EVENTOUT
47 63 A7 99 D3 E6 - VSS S - - - -

- - C6 - H3 E5 143 PDR_ON I FT - - -

48 64 A8 100 C4 F5 144 VDD S - - - -

1. Function availability depends on the chosen device.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF.
- These I/Os must not be used as a current source (e.g. to drive an LED).

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3. Main function after the first backup domain power-up. Later on, it depends on the contents of the RTC registers even after
reset (because these registers are not reset by the main reset). For details on how to manage these I/Os, refer to the RTC
register description sections in the STM32F412xE/Greference manual.
4. FT = 5 V tolerant except when in analog mode or oscillator mode (for PC14, PC15, PH0 and PH1).

Table 10. FSMC pin definition

FSMC
Pins 64 pins 100 pins 144 pins
LCD/NOR/PSR NOR/PSRAM
AM/SRAM Mux

PE2 A23 A23 - Yes Yes

PE3 A19 A19 - Yes Yes
PE4 A20 A20 - Yes Yes
PE5 A21 A21 - Yes Yes
PE6 A22 A22 - Yes Yes
PF0 A0 - - - Yes
PF1 A1 - - - Yes
PF2 A2 - - - Yes
PF3 A3 - - - Yes
PF4 A4 - - - Yes
PF5 A5 - - - Yes
PC2 NWE NWE Yes Yes Yes
PC3 A0 - Yes Yes Yes
PA2 D4 DA4 Yes Yes Yes
PA3 D5 DA5 Yes Yes Yes
PA4 D6 DA6 Yes Yes Yes
PA5 D7 DA7 Yes Yes Yes
PC4 NE4 NE4 Yes Yes Yes
PC5 NOE NOE Yes Yes Yes
PF12 A6 - - - Yes
PF13 A7 - - - Yes
PF14 A8 - - - Yes
PF15 A9 - - - Yes
PG0 A10 - - - Yes
PG1 A11 - - - Yes
PE7 D4 DA4 - Yes Yes
PE8 D5 DA5 - Yes Yes
PE9 D6 DA6 - Yes Yes
PE10 D7 DA7 - Yes Yes

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STM32F412xE/G Pinouts and pin description

Table 10. FSMC pin definition

FSMC
Pins 64 pins 100 pins 144 pins
LCD/NOR/PSR NOR/PSRAM
AM/SRAM Mux

PE11 D8 DA8 - Yes Yes

PE12 D9 DA9 - Yes Yes
PE13 D10 DA10 - Yes Yes
PE14 D11 DA11 - Yes Yes
PE15 D12 DA12 - Yes Yes
PB12 D13 DA13 Yes Yes Yes
PB14 D0 DA0 Yes Yes Yes
PD8 D13 DA13 - - Yes
PD9 D14 DA14 - Yes Yes
PD10 D15 DA15 - Yes Yes
PD11 A16 A16 - Yes Yes
PD12 A17 A17 - Yes Yes
PD13 A18 A18 - Yes Yes
PD14 D0 DA0 - Yes Yes
PD15 D1 DA1 - Yes Yes
PG2 A12 - - - Yes
PG3 A13 - - - Yes
PG4 A14 - - - Yes
PG5 A15 - - - Yes
PC6 D1 DA1 Yes Yes Yes
PC11 D2 DA2 Yes Yes Yes
PC12 D3 DA3 Yes Yes Yes
PD0 D2 DA2 - Yes Yes
PD1 D3 DA3 - Yes Yes
PD2 NWE NWE Yes Yes Yes
PD3 CLK CLK - Yes Yes
PD4 NOE NOE - Yes Yes
PD5 NWE NEW - Yes Yes
PD6 NWAIT NWAIT - Yes Yes
PD7 NE1 NE1 - Yes Yes
PG9 NE2 NE2 - - Yes
PG10 NE3 NE3 - - Yes
PG12 A24 A24 - - Yes

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Table 10. FSMC pin definition

FSMC
Pins 64 pins 100 pins 144 pins
LCD/NOR/PSR NOR/PSRAM
AM/SRAM Mux

PG14 A25 A25 - - Yes

PB7 NL NL Yes Yes Yes
PE0 NBL0 NBL0 - Yes Yes
PE1 NBL1 NBL1 - Yes Yes

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 STM32F412xE/G
Table 11. STM32F412xE/G alternate functions
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

TIM2_CH1/
PA0 - TIM5_CH1 TIM8_ETR - - - USART2_CTS - - - - EVENTOUT
TIM2_ETR

SPI4_MOSI/I QUADSPI_
PA1 - TIM2_CH2 TIM5_CH2 - - - USART2_RTS - - - EVENTOUT
2S4_SD BK1_IO3

PA2 - TIM2_CH3 TIM5_CH3 TIM9_CH1 - I2S2_CKIN - USART2_TX - - - FSMC_D4 EVENTOUT

PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - I2S2_MCK - USART2_RX - - - FSMC_D5 EVENTOUT

SPI1_NSS/I2 SPI3_NSS/ DFSDM1_

PA4 - - - - - USART2_CK - - FSMC_D6 EVENTOUT
S1_WS I2S3_WS DATIN1
DocID028087 Rev 7

TIM2_CH1/ SPI1_SCK/ DFSDM1_

PA5 - - TIM8_CH1N - - - - - FSMC_D7 EVENTOUT
TIM2_ETR I2S1_CK CKIN1

TIM13_ QUADSPI_
PA6 - TIM1_BKIN TIM3_CH1 TIM8_BKIN - SPI1_MISO I2S2_MCK - - SDIO_CMD EVENTOUT
CH1 BK2_IO0

SPI1_MOSI/I TIM14_ QUADSPI_

PA7 - TIM1_CH1N TIM3_CH2 TIM8_CH1N - - - - - EVENTOUT
2S1_SD CH1 BK2_IO1
Port A

USB_FS_
PA8 MCO_1 TIM1_CH1 - - I2C3_SCL - - USART1_CK - - SDIO_D1 EVENTOUT
SOF

I2C3_ USB_FS_
PA9 - TIM1_CH2 - - - - USART1_TX - - SDIO_D2 EVENTOUT
SMBA VBUS

SPI5_MOSI/
PA10 - TIM1_CH3 - - - - USART1_RX - - USB_FS_ID - EVENTOUT
I2S5_SD

Pinouts and pin description

USART6_
PA11 - TIM1_CH4 - - - - SPI4_MISO USART1_CTS CAN1_RX USB_FS_DM - EVENTOUT
TX

USART6_
PA12 - TIM1_ETR - - - - SPI5_MISO USART1_RTS CAN1_TX USB_FS_DP - EVENTOUT
RX

JTMS-
PA13 - - - - - - - - - - - EVENTOUT
SWDIO

JTCK-
PA14 - - - - - - - - - - - EVENTOUT
SWCLK

TIM2_CH1/ SPI1_NSS/ SPI3_NSS/

PA15 JTDI - - - USART1_TX - - - - EVENTOUT
TIM2_ETR I2S1_WS I2S3_WS
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 Table 11. STM32F412xE/G alternate functions (continued)
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Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

SPI5_SCK/
PB0 - TIM1_CH2N TIM3_CH3 TIM8_CH2N - - - - - - - EVENTOUT
I2S5_CK

SPI5_NSS/ DFSDM1_ QUADSPI_

PB1 - TIM1_CH3N TIM3_CH4 TIM8_CH3N - - - - - EVENTOUT
I2S5_WS DATIN0 CLK

DFSDM1_ QUADSPI_
PB2 - - - - - - - - - - EVENTOUT
CKIN0 CLK

JTDO- I2CFMP1_ SPI1_SCK/I2 SPI3_SCK/

PB3 TIM2_CH2 USART1_RX - I2C2_SDA - - EVENTOUT
SWO SDA S1_CK I2S3_CK

I2S3ext_
PB4 JTRST - TIM3_CH1 - - SPI1_MISO SPI3_MISO - I2C3_SDA - SDIO_D0 EVENTOUT
SD
DocID028087 Rev 7

SPI1_MOSI/I SPI3_MOSI/
PB5 - - TIM3_CH2 - I2C1_SMBA - - CAN2_RX - SDIO_D3 EVENTOUT
2S1_SD I2S3_SD

QUADSPI_
PB6 - - TIM4_CH1 - I2C1_SCL - - USART1_TX - CAN2_TX SDIO_D0 EVENTOUT
BK1_NCS

PB7 - - TIM4_CH2 - I2C1_SDA - - USART1_RX - - - FSMC_NL EVENTOUT

Port B

SPI5_MOSI/I2S
PB8 - - TIM4_CH3 TIM10_CH1 I2C1_SCL - - CAN1_RX I2C3_SDA - SDIO_D4 EVENTOUT
5_SD

SPI2_NSS/
PB9 - - TIM4_CH4 TIM11_CH1 I2C1_SDA - - CAN1_TX I2C2_SDA - SDIO_D5 EVENTOUT
I2S2_WS

SPI2_SCK/ I2CFMP1_
PB10 - TIM2_CH3 - - I2C2_SCL I2S3_MCK USART3_TX - - SDIO_D7 EVENTOUT
I2S2_CK SCL

PB11 - TIM2_CH4 - - I2C2_SDA I2S2_CKIN - USART3_RX - - - - EVENTOUT

SPI2_NSS/ SPI4_NSS/ SPI3_SCK/ USART3_ DFSDM1_ FSMC_D13/F

PB12 - TIM1_BKIN - - I2C2_SMBA CAN2_RX EVENTOUT
I2S2_WS I2S4_WS I2S3_CK CK DATIN1 SMC_DA13

STM32F412xE/G
I2CFMP1_ SPI2_SCK/ SPI4_SCK/ USART3_ DFSDM1_
PB13 - TIM1_CH1N - - - CAN2_TX - EVENTOUT
SMBA I2S2_CK I2S4_CK CTS CKIN1

I2CFMP1_ USART3_ DFSDM1_

PB14 - TIM1_CH2N - TIM8_CH2N SPI2_MISO I2S2ext_SD TIM12_CH1 FSMC_D0 SDIO_D6 EVENTOUT
SDA RTS DATIN2

RTC_ I2CFMP1_ SPI2_MOSI/I DFSDM1_

PB15 TIM1_CH3N - TIM8_CH3N - - TIM12_CH2 - SDIO_CK EVENTOUT
50Hz SCL 2S2_SD CKIN2
 Table 11. STM32F412xE/G alternate functions (continued)

STM32F412xE/G
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

PC0 - - - - - - - - - - - - EVENTOUT

PC1 - - - - - - - - - - - - EVENTOUT

DFSDM1_
PC2 - - - - - SPI2_MISO I2S2ext_SD - - - FSMC_NWE EVENTOUT
CKOUT

SPI2_MOSI/I
PC3 - - - - - - - - - - FSMC_A0 EVENTOUT
2S2_SD

QUADSPI_
PC4 - - - - - I2S1_MCK - - - - FSMC_NE4 EVENTOUT
BK2_IO2
DocID028087 Rev 7

I2CFMP1_ QUADSPI_
PC5 - - - - - - USART3_RX - - FSMC_NOE EVENTOUT
SMBA BK2_IO3

I2CFMP1_ DFSDM1_ USART6_

PC6 - - TIM3_CH1 TIM8_CH1 I2S2_MCK - - FSMC_D1 SDIO_D6 EVENTOUT
SCL CKIN3 TX

I2CFMP1_ SPI2_SCK/ USART6_ DFSDM1_

PC7 - - TIM3_CH2 TIM8_CH2 I2S3_MCK - - SDIO_D7 EVENTOUT
SDA I2S2_CK RX DATIN3
Port C

USART6_ QUADSPI_
PC8 - - TIM3_CH3 TIM8_CH3 - - - - - SDIO_D0 EVENTOUT
CK BK1_IO2

QUADSPI_
PC9 MCO_2 - TIM3_CH4 TIM8_CH4 I2C3_SDA I2S2_CKIN - - - - SDIO_D1 EVENTOUT
BK1_IO0

SPI3_SCK/ QUADSPI_
PC10 - - - - - - USART3_TX - - SDIO_D2 EVENTOUT
I2S3_CK BK1_IO1

Pinouts and pin description

QUADSPI_
PC11 - - - - - I2S3ext_SD SPI3_MISO USART3_RX - FSMC_D2 SDIO_D3 EVENTOUT
BK2_NCS

SPI3_MOSI/
PC12 - - - - - - USART3_CK - - FSMC_D3 SDIO_CK EVENTOUT
I2S3_SD

PC13 - - - - - - - - - - - - EVENTOUT

PC14 - - - - - - - - - - - - EVENTOUT

PC15 - - - - - - - - - - - - EVENTOUT
69/201
 Table 11. STM32F412xE/G alternate functions (continued)
70/201

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

FSMC_D2/FS
PD0 - - - - - - - - - CAN1_RX - EVENTOUT
MC_DA2

FSMC_D3/FS
PD1 - - - - - - - - - CAN1_TX - EVENTOUT
MC_DA3

PD2 - - TIM3_ETR - - - - - - - FSMC_NWE SDIO_CMD EVENTOUT

SPI2_SCK/ DFSDM1_ USART2_ QUADSPI_

PD3 TRACED1 - - - - - - FSMC_CLK EVENTOUT
I2S2_CK DATIN0 CTS CLK

DFSDM1_ USART2_
PD4 - - - - - - - - - FSMC_NOE EVENTOUT
CKIN0 RTS
DocID028087 Rev 7

PD5 - - - - - - - USART2_TX - - - FSMC_NWE EVENTOUT

SPI3_MOSI/I DFSDM1_ FSMC_

PD6 - - - - - USART2_RX - - - EVENTOUT
2S3_SD DATIN1 NWAIT

DFSDM1_
PD7 - - - - - - USART2_CK - - - FSMC_NE1 EVENTOUT
CKIN1

FSMC_D13/
Port D

PD8 - - - - - - - USART3_TX - - - EVENTOUT

FSMC_DA13

FSMC_D14/
PD9 - - - - - - - USART3_RX - - - EVENTOUT
FSMC_DA14

FSMC_D15/
PD10 - - - - - - - USART3_CK - - - EVENTOUT
FSMC_DA15

I2CFMP1_ USART3_ QUADSPI_

PD11 - - - - - - - - FSMC_A16 EVENTOUT
SMBA CTS BK1_IO0

I2CFMP1_ USART3_ QUADSPI_

PD12 - - TIM4_CH1 - - - FSMC_A17 EVENTOUT
SCL RTS BK1_IO1

STM32F412xE/G
I2CFMP1_ QUADSPI_
PD13 - - TIM4_CH2 - - - - - - FSMC_A18 EVENTOUT
SDA BK1_IO3

I2CFMP1_ FSMC_D0/
PD14 - - TIM4_CH3 - - - - - - - EVENTOUT
SCL FSMC_DA0

I2CFMP1_ FSMC_D1/
PD15 - - TIM4_CH4 - - - - - - - EVENTOUT
SDA FSMC_DA1
 Table 11. STM32F412xE/G alternate functions (continued)

STM32F412xE/G
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

PE0 - - TIM4_ETR - - - - - - - - FSMC_NBL0 EVENTOUT

PE1 - - - - - - - - - - - FSMC_NBL1 EVENTOUT

TRACECL SPI4_SCK/ SPI5_SCK/ QUADSPI_

PE2 - - - - - - - FSMC_A23 EVENTOUT
K I2S4_CK I2S5_CK BK1_IO2

PE3 TRACED0 - - - - - - - - - - FSMC_A19 EVENTOUT

SPI4_NSS/ SPI5_NSS/ DFSDM1_

PE4 TRACED1 - - - - - - - FSMC_A20 EVENTOUT
I2S4_WS I2S5_WS DATIN3

DFSDM1_
DocID028087 Rev 7

PE5 TRACED2 - - TIM9_CH1 - SPI4_MISO SPI5_MISO - - - FSMC_A21 EVENTOUT

CKIN3

SPI4_MOSI/I SPI5_MOSI/
PE6 TRACED3 - - TIM9_CH2 - - - - - FSMC_A22 EVENTOUT
2S4_SD I2S5_SD

DFSDM1_ QUADSPI_ FSMC_D4/

PE7 - TIM1_ETR - - - - - - - EVENTOUT
DATIN2 BK2_IO0 FSMC_DA4

DFSDM1_ QUADSPI_ FSMC_D5/

PE8 - TIM1_CH1N - - - - - - - EVENTOUT
CKIN2 BK2_IO1 FSMC_DA5
Port E

DFSDM1_ QUADSPI_ FSMC_D6/

PE9 - TIM1_CH1 - - - - - - - EVENTOUT
CKOUT BK2_IO2 FSMC_DA6

QUADSPI_ FSMC_D7/
PE10 - TIM1_CH2N - - - - - - - - EVENTOUT
BK2_IO3 FSMC_DA7

SPI4_NSS/ SPI5_NSS/ FSMC_D8/

PE11 - TIM1_CH2 - - - - - - EVENTOUT
I2S4_WS I2S5_WS FSMC_DA8

Pinouts and pin description

SPI4_SCK/ SPI5_SCK/ FSMC_D9/
PE12 - TIM1_CH3N - - - - - - - EVENTOUT
I2S4_CK I2S5_CK FSMC_DA9

FSMC_D10/
PE13 - TIM1_CH3 - - - SPI4_MISO SPI5_MISO - - - - EVENTOUT
FSMC_DA10

SPI4_MOSI/I SPI5_MOSI/ FSMC_D11/

PE14 - TIM1_CH4 - - - - - - - EVENTOUT
2S4_SD I2S5_SD FSMC_DA11

FSMC_D12/
PE15 - TIM1_BKIN - - - - - - - - - EVENTOUT
71/201

FSMC_DA12
 Table 11. STM32F412xE/G alternate functions (continued)
72/201

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

PF0 - - - - I2C2_SDA - - - - - - FSMC_A0 EVENTOUT

PF1 - - - - I2C2_SCL - - - - - - FSMC_A1 EVENTOUT

PF2 - - - - I2C2_SMBA - - - - - - FSMC_A2 EVENTOUT

PF3 - - TIM5_CH1 - - - - - - - - FSMC_A3 EVENTOUT

PF4 - - TIM5_CH2 - - - - - - - - FSMC_A4 EVENTOUT

PF5 - - TIM5_CH3 - - - - - - - - FSMC_A5 EVENTOUT

DocID028087 Rev 7

QUADSPI_
PF6 TRACED0 - - TIM10_CH1 - - - - - - - EVENTOUT
BK1_IO3

QUADSPI_
PF7 TRACED1 - - TIM11_CH1 - - - - - - - EVENTOUT
BK1_IO2
Port F

QUADSPI_
PF8 - - - - - - - - - TIM13_CH1 - EVENTOUT
BK1_IO0

QUADSPI_
PF9 - - - - - - - - - TIM14_CH1 - EVENTOUT
BK1_IO1

PF10 - TIM1_ETR TIM5_CH4 - - - - - - - - - EVENTOUT

PF11 - - - TIM8_ETR - - - - - - - - EVENTOUT

PF12 - - - TIM8_BKIN - - - - - - - FSMC_A6 EVENTOUT

I2CFMP1_
PF13 - - - - - - - - - - FSMC_A7 EVENTOUT
SMBA

I2CFMP1_
PF14 - - - - - - - - - - FSMC_A8 EVENTOUT
SCL

I2CFMP1_
PF15 - - - - - - - - - - FSMC_A9 EVENTOUT

STM32F412xE/G
SDA
 Table 11. STM32F412xE/G alternate functions (continued)

STM32F412xE/G
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF12 AF15

I2C2/I2C3/
Port TIM8/ I2C1/ SPI1/I2S1/ SPI2/I2S2/SPI3 SPI3/I2S3/ DFSDM1/ I2CFMP1/ DFSDM1/
TIM3/
TIM1/ TIM9/ I2C2/ SPI2/I2S2/ /I2S3/SPI4/ USART1/ USART3/ CAN1/CAN2 QUADSPI/
SYS_AF TIM4/ FSMC /SDIO SYS_AF
TIM2 TIM10/ I2C3/ SPI3/I2S3/ I2S4/SPI5/I2S5 USART2/ USART6/ /TIM12/ FSMC
TIM5
TIM11 I2CFMP1 SPI4/I2S4 /DFSDM1 USART3 CAN1 TIM13/TIM14 /OTG1_FS
/QUADSPI

PG0 - - - - - - - - - CAN1_RX - FSMC_A10 EVENTOUT

PG1 - - - - - - - - - CAN1_TX - FSMC_A11 EVENTOUT

PG2 - - - - - - - - - - - FSMC_A12 EVENTOUT

PG3 - - - - - - - - - - - FSMC_A13 EVENTOUT

PG4 - - - - - - - - - - - FSMC_A14 EVENTOUT

PG5 - - - - - - - - - - - FSMC_A15 EVENTOUT

DocID028087 Rev 7

QUADSPI_
PG6 - - - - - - - - - - - EVENTOUT
BK1_NCS

USART6_
PG7 - - - - - - - - - - - EVENTOUT
CK
Port G

USART6_
PG8 - - - - - - - - - - - EVENTOUT
RTS

USART6_ QUADSPI_
PG9 - - - - - - - - - FSMC_NE2 EVENTOUT
RX BK2_IO2

PG10 - - - - - - - - - - - FSMC_NE3 EVENTOUT

PG11 - - - - - - - - - CAN2_RX - - EVENTOUT

USART6_
PG12 - - - - - - - - CAN2_TX - FSMC_NE4 EVENTOUT

Pinouts and pin description

RTS

USART6_
PG13 TRACED2 - - - - - - - - - FSMC_A24 EVENTOUT
CTS

USART6_ QUADSPI_
PG14 TRACED3 - - - - - - - - FSMC_A25 EVENTOUT
TX BK2_IO3

USART6_
PG15 - - - - - - - - - - - EVENTOUT
CTS

PH0 - - - - - - - - - - - - EVENTOUT
Port H

PH1 - - - - - - - - - - - - EVENTOUT
73/201
Memory mapping STM32F412xE/G

5 Memory mapping

The memory map is shown in Figure 18.

Figure 18. Memory map

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06Y9

74/201 DocID028087 Rev 7

STM32F412xE/G Memory mapping

Table 12. STM32F412xE/G register boundary addresses

Bus Boundary address Peripheral

0xE010 0000 - 0xFFFF FFFF Reserved

®
Cortex -M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0xA000 2000 - 0xDFFF FFFF Reserved
0xA000 1000 - 0xA000 1FFF QuadSPI control register
0xA000 0000 - 0xA000 0FFF FSMC control register
AHB3
0x9000 0000 - 0x9FFF FFFF QUADSPI
0x7000 0000 - 0x08FFF FFFF Reserved
0x6000 0000 - 0x6FFF FFFF FSMC
0x5006 0C00 - 0x5FFF FFFF Reserved
0x5006 0800 0x5006 0BFF RNG
AHB2
0x5004 000- 0x5006 07FF Reserved
0x5000 0000 - 0x5003 FFFF USB OTG FS
0x4002 6800 - 0x4FFF FFFF Reserved
0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0x4002 5000 - 0x4002 4FFF Reserved
0x4002 3C00 - 0x4002 3FFF Flash interface register
0x4002 3800 - 0x4002 3BFF RCC
0x4002 3400 - 0x4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
AHB1 0x4002 2000 - 0x4002 2FFF Reserved
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1800 - 0x4002 1BFF GPIOG
0x4002 1400 - 0x4002 17FF GPIOF
0x4002 1000 - 0x4002 13FF GPIOE
0x4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA

DocID028087 Rev 7 75/201

77
Memory mapping STM32F412xE/G

Table 12. STM32F412xE/G register boundary addresses (continued)

Bus Boundary address Peripheral

0x4001 6400- 0x4001 FFFF Reserved

0x4001 6000 - 0x4001 63FF DFSDM1
0x4001 5400 - 0x4001 5FFF Reserved
0x4001 5000 - 0x4001 53FF SPI5/I2S5
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF SPI4/I2S4
APB2 0x4001 3000 - 0x4001 33FF SPI1/I2S1
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0800 - 0x4001 0FFF Reserved
0x4001 0400 - 0x4001 07FF TIM8
0x4001 0000 - 0x4001 03FF TIM1
0x4000 7400 - 0x4000 FFFF Reserved

76/201 DocID028087 Rev 7

STM32F412xE/G Memory mapping

Table 12. STM32F412xE/G register boundary addresses (continued)

Bus Boundary address Peripheral

0x4000 7000 - 0x4000 73FF PWR

0x4000 6C00 - 0x4000 6FFF Reserved
0x4000 6800- 0x4000 6BFF CAN2
0x4000 6400- 0x4000 67FF CAN1
0x4000 6000- 0x4000 63FF I2CFMP1
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 4C00 - 0x4000 53FF Reserved
0x4000 4800 - 0x4000 4BFF USART3
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF I2S3ext
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
APB1
0x4000 3400 - 0x4000 37FF I2S2ext
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 2400 - 0x4000 27FF Reserved
0x4000 2000 - 0x4000 23FF TIM14
0x4000 1C00 - 0x4000 1FFF TIM13
0x4000 1800 - 0x4000 1BFF TIM12
0x4000 1400 - 0x4000 17FF TIM7
0x4000 1000 - 0x4000 13FF TIM6
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2

DocID028087 Rev 7 77/201

77
Electrical characteristics STM32F412xE/G

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3 σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.7 V ≤VDD ≤3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2 σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 19.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 20.

Figure 19. Pin loading conditions Figure 20. Input voltage measurement

-#5PIN -#5PIN

#P& 6).

-36 -36

78/201 DocID028087 Rev 7

STM32F412xE/G Electrical characteristics

6.1.6 Power supply scheme

Figure 21. Power supply scheme

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1. To connect PDR_ON pin, refer to Section: Power supply supervisor.

2. The 4.7 µF ceramic capacitor must be connected to one of the VDD pin.
3. VCAP_2 pad is only available on 100-pin and 144-pin packages.
4. VDDA=VDD and VSSA=VSS.
5. VDDUSB is a dedicated independent USB power supply for the on-chip full-speed OTG PHY module and
associated DP/DM GPIOs. VDDUSB value does not depend on the VDD and VDDA values, but it must be the
last supply to be provided and the first to disappear.
Caution: Each power supply pair (for example VDD/VSS, VDDA/VSSA) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below, the appropriate pins on the underside of the PCB to ensure good operation of
the device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.
This might cause incorrect operation of the device.

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6.1.7 Current consumption measurement

Figure 22. Current consumption measurement scheme

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6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 13: Voltage characteristics,
Table 14: Current characteristics, and Table 15: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Table 13. Voltage characteristics

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VDD,

VDD–VSS –0.3 4.0
VDDUSB and VBAT)(1)
Input voltage on FT and TC pins(2) VSS–0.3 VDD+4.0 V
VIN Input voltage on any other pin VSS–0.3 4.0
Input voltage for BOOT0 VSS 9.0
|ΔVDDx| Variations between different VDD power pins - 50
mV
|VSSX −VSS| Variations between all the different ground pins - 50
see Section 6.3.14:
Absolute maximum
VESD(HBM) Electrostatic discharge voltage (human body model)
ratings (electrical
sensitivity)
1. All main power (VDD, VDDA, VDDUSB) and ground (VSS, VSSA) pins must always be connected to the
external power supply, in the permitted range.
2. VIN maximum value must always be respected. Refer to Table 14 for the values of the maximum allowed
injected current.

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Table 14. Current characteristics

Symbol Ratings Max. Unit

ΣIVDD Total current into sum of all VDD_x power lines (source)(1) 160
(1)
Σ IVSS Total current out of sum of all VSS_x ground lines (sink) -160
Σ IVDDUSB Total current into VDDUSB power lines (source) 25
IVDD Maximum current into each VDD_x power line (source)(1) 100
(1)
IVSS Maximum current out of each VSS_x ground line (sink) -100
Output current sunk by any I/O and control pin 25
IIO
Output current sourced by any I/O and control pin -25 mA
(2)
Total output current sunk by sum of all I/O and control pins 120
ΣIIO Total output current sunk by sum of all USB I/Os 25
Total output current sourced by sum of all I/Os and control pins(2) -120
(4)
Injected current on FT and TC pins
IINJ(PIN) (3) –5/+0
Injected current on NRST and B pins (4)
ΣIINJ(PIN) Total injected current (sum of all I/O and control pins)(5) ±25
1. All main power (VDD, VDDA, VDDUSB) and ground (VSS, VSSA) pins must always be connected to the external power supply,
in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins.
3. Negative injection disturbs the analog performance of the device. See note in Section 6.3.20: 12-bit ADC characteristics.
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 15. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150

TJ Maximum junction temperature 130
°C
Maximum lead temperature during soldering
(1)
TLEAD (WLCSP64, LQFP64/100/144, UFQFPN48, see note
UFBGA100/144)
1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (ROHS
directive 2011/65/EU, July 2011).

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6.3 Operating conditions

6.3.1 General operating conditions

Table 16. General operating conditions

Symbol Parameter Conditions Min Typ Max Unit

Power Scale3: Regulator ON,

0 - 64
VOS[1:0] bits in PWR_CR register = 0x01
Power Scale2: Regulator ON,
fHCLK Internal AHB clock frequency 0 - 84 MHz
VOS[1:0] bits in PWR_CR register = 0x10
Power Scale1: Regulator ON,
0 - 100
VOS[1:0] bits in PWR_CR register = 0x11
Internal APB1 clock
fPCLK1 - 0 - 50 MHz
frequency
Internal APB2 clock
fPCLK2 - 0 - 100 MHz
frequency
VDD Standard operating voltage - 1.7(1) - 3.6 V
Analog operating voltage
(ADC limited to 1.2 M 1.7(1) - 2.4
samples)
VDDA(2)(3) Must be the same potential as VDD(4) V
Analog operating voltage
(ADC limited to 2.4 M 2.4 - 3.6
samples)
USB supply voltage USB not used 1.7 3.3 3.6
VDDUSB (supply voltage for PA11 and V
PA12 pins) USB used(5) 3.0 - 3.6

VBAT Backup operating voltage - 1.65 - 3.6 V

VOS[1:0] bits in PWR_CR register = 0x01
1.08(6) 1.14 1.20(6)
Max frequency 64 MHz
Regulator ON: 1.2 V
VOS[1:0] bits in PWR_CR register = 0x10
V12 internal voltage on 1.20(6) 1.26 1.32(6) V
Max frequency 84 MHz
VCAP_1/VCAP_2 pins
VOS[1:0] bits in PWR_CR register = 0x11
1.26 1.32 1.38
Max frequency 100 MHz
Regulator OFF: 1.2 V Max frequency 64 MHz 1.10 1.14 1.20
external voltage must be
V12 Max frequency 84 MHz 1.20 1.26 1.32 V
supplied on
VCAP_1/VCAP_2 pins Max frequency 100 MHz 1.26 1.32 1.38

Input voltage on RST, FT and 2 V ≤ VDD ≤ 3.6 V -0.3 - 5.5

VIN TC pins(7) VDD ≤ 2 V -0.3 - 5.2 V
Input voltage on BOOT0 pin - 0 - 9

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Table 16. General operating conditions (continued)

Symbol Parameter Conditions Min Typ Max Unit

UFQFPN48 - - 625
WLCSP64 - - 392
LQFP64 - - 425
Power dissipation at
PD TA = 85°C for range 6 or LQFP100 - - 465
TA = 105°C for range 7(8)
LQFP144 - - 571
UFBGA100 - - 351
UFBGA144 - - 416
mW
UFQFPN48 - - 156
WLCSP64 - - 98
LQFP64 - - 106
Power dissipation at
PD LQFP100 - - 116
TA = 125 °C for range 3(8)
LQFP144 - - 142
UFBGA100 - - 88
UFBGA144 - - 104

Ambient temperature for Maximum power dissipation -40 - 85

range 6 Low power dissipation(9) -40 - 105

Ambient temperature for Maximum power dissipation -40 - 105

TA
range 7 Low power dissipation(9) -40 - 125

Ambient temperature for Maximum power dissipation -40 - 110 °C

range 3 Low power dissipation (9)
-40 - 130
Range 6 -40 - 105
TJ Junction temperature range Range 7 -40 - 125
Range 3 -40 - 130
1. VDD/VDDA minimum value of 1.7 V with the use of an external power supply supervisor (refer to Section 3.18.2: Internal
reset OFF).
2. When the ADC is used, refer to Table 72: ADC characteristics.
3. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
4. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
5. Only the DM (PA11) and DP (PA12) pads are supplied through VDDUSB. For application where the VBUS (PA9) is directly
connected to the chip, a minimum VDD supply of 2.7V is required.
(some application examples are shown in appendix B)
6. Guaranteed by test in production
7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

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Table 17. Features depending on the operating power supply range

Maximum
Flash
Operating memory Maximum Flash Possible
Clock output
power ADC access memory access Flash
I/O operation frequency on
supply operation frequency frequency with memory
I/O pins(3)
range with no wait wait states (1)(2) operations
states
(fFlashmax)

8-bit erase
Conversion
VDD =1.7 to (5) 100 MHz with 6 – No I/O and program
time up to 16 MHz up to 30 MHz
2.1 V(4) wait states compensation operations
1.2 Msps
only
Conversion 16-bit erase
VDD = 2.1 to 100 MHz with 5 – No I/O
time up to 18 MHz up to 30 MHz and program
2.4 V wait states compensation
1.2 Msps operations
Conversion – I/O 16-bit erase
VDD = 2.4 to 100 MHz with 4
time up to 24 MHz compensation up to 50 MHz and program
2.7 V wait states
2.4 Msps works operations
– up to
100 MHz
when VDD =
Conversion – I/O 32-bit erase
VDD = 2.7 to 100 MHz with 3 3.0 to 3.6 V
time up to 30 MHz compensation and program
3.6 V(6) wait states – up to
2.4 Msps works operations
50 MHz
when VDD =
2.7 to 3.0 V
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state
program execution.
3. Refer to Table 59: I/O AC characteristics for frequencies vs. external load.
4. VDD/VDDA minimum value of 1.7 V, with the use of an external power supply supervisor (refer to Section 3.18.2: Internal
reset OFF).
5. Prefetch available over the complete VDD supply range.
6. The voltage range for the USB full speed embedded PHY can drop down to 2.7 V. However the electrical characteristics of
D- and D+ pins will be degraded between 2.7 and 3 V.

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6.3.2 VCAP_1/VCAP_2 external capacitors

Stabilization for the main regulator is achieved by connecting the external capacitor CEXT to
the VCAP_1 and VCAP_2 pins. For packages supporting only 1 VCAP pin, the 2 CEXT
capacitors are replaced by a single capacitor.
CEXT is specified in Table 18.

Figure 23. External capacitor CEXT

&

(65

5/HDN
069

1. Legend: ESR is the equivalent series resistance.

Table 18. VCAP_1/VCAP_2 operating conditions(1)

Symbol Parameter Conditions

Capacitance of external capacitor with the pins

CEXT 2.2 µF
VCAP_1 and VCAP_2 available
ESR of external capacitor with the pins VCAP_1 and
ESR <2Ω
VCAP_2 available
Capacitance of external capacitor with a single VCAP
CEXT 4.7 µF
pin available
ESR of external capacitor with a single VCAP pin
ESR <1Ω
available
1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and should be
replaced by two 100 nF decoupling capacitors.

6.3.3 Operating conditions at power-up/power-down (regulator ON)

Subject to general operating conditions for TA.

Table 19. Operating conditions at power-up / power-down (regulator ON)

Symbol Parameter Min Max Unit

VDD rise time rate 20 ∞

tVDD µs/V
VDD fall time rate 20 ∞

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6.3.4 Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.

Table 20. Operating conditions at power-up / power-down (regulator OFF)(1)

Symbol Parameter Conditions Min Max Unit

VDD rise time rate Power-up 20 ∞

tVDD
VDD fall time rate Power-down 20 ∞
µs/V
VCAP_1 and VCAP_2 rise time rate Power-up 20 ∞
tVCAP
VCAP_1 and VCAP_2 fall time rate Power-down 20 ∞
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD reach below
1.08 V.

Note: This feature is only available for UFBGA100 and UFBGA144 packages.

6.3.5 Embedded reset and power control block characteristics

The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage @ 3.3V.

Table 21. Embedded reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

PLS[2:0]=000 (rising edge) 2.09 2.14 2.19

PLS[2:0]=000 (falling edge) 1.98 2.04 2.08
PLS[2:0]=001 (rising edge) 2.23 2.30 2.37
PLS[2:0]=001 (falling edge) 2.13 2.19 2.25
PLS[2:0]=010 (rising edge) 2.39 2.45 2.51
PLS[2:0]=010 (falling edge) 2.29 2.35 2.39
PLS[2:0]=011 (rising edge) 2.54 2.60 2.65

Programmable voltage PLS[2:0]=011 (falling edge) 2.44 2.51 2.56

VPVD V
detector level selection PLS[2:0]=100 (rising edge) 2.70 2.76 2.82
PLS[2:0]=100 (falling edge) 2.59 2.66 2.71
PLS[2:0]=101 (rising edge) 2.86 2.93 2.99
PLS[2:0]=101 (falling edge) 2.65 2.84 3.02
PLS[2:0]=110 (rising edge) 2.96 3.03 3.10
PLS[2:0]=110 (falling edge) 2.85 2.93 2.99
PLS[2:0]=111 (rising edge) 3.07 3.14 3.21
PLS[2:0]=111 (falling edge) 2.95 3.03 3.09
(2)
VPVDhyst PVD hysteresis - - 100 - mV

Power-on/power-down Falling edge 1.60(1) 1.68 1.76

VPOR/PDR V
reset threshold Rising edge 1.64 1.72 1.80

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Table 21. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions Min Typ Max Unit

VPDRhyst(2) PDR hysteresis - - 40 - mV

Brownout level 1 Falling edge 2.13 2.19 2.24

VBOR1
threshold Rising edge 2.23 2.29 2.33

Brownout level 2 Falling edge 2.44 2.50 2.56

VBOR2 V
threshold Rising edge 2.53 2.59 2.63

Brownout level 3 Falling edge 2.75 2.83 2.88

VBOR3
threshold Rising edge 2.85 2.92 2.97
(2)
VBORhyst BOR hysteresis - - 100 - mV
TRSTTEMPO
(2)(3) POR reset timing - 0.5 1.5 3.0 ms

In-Rush current on
voltage regulator power-
IRUSH(2) - - 160 200 mA
on (POR or wakeup from
Standby)
In-Rush energy on
(2) voltage regulator power- VDD = 1.7 V, TA = 125 °C,
ERUSH - - 5.4 µC
on (POR or wakeup from IRUSH = 171 mA for 31 µs
Standby)
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design, not tested in production.
3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first
instruction is fetched by the user application code.

6.3.6 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 22: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.

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Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in input mode with a static value at VDD or VSS (no load).
• All peripherals are disabled except if it is explicitly mentioned.
• The Flash memory access time is adjusted to both fHCLK frequency and VDD ranges
(refer to Table 17: Features depending on the operating power supply range).
• The voltage scaling is adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK ≤ 64 MHz
– Scale 2 for 64 MHz < fHCLK ≤ 84 MHz
– Scale 1 for 84 MHz < fHCLK ≤ 100 MHz
• The system clock is HCLK, fPCLK1 = fHCLK/2, and fPCLK2 = fHCLK.
• External clock is 4 MHz and PLL is ON except if it is explicitly mentioned.
• The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.

Table 22. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 1.7 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions Unit
(MHz) TA= TA= TA= TA= TA=
25 °C 25 °C 85 °C 105 °C 125 °C

100 28.1 30.24 31.27 32.21 34.21

84 22.7 24.05 24.54 25.11 26.74
External clock,
PLL ON, 64 15.7 16.99 17.47 18.03 19.71
all peripherals 50 12.3 13.36 13.82 14.36 15.51
enabled(2)(3)
25 6.5 7.44 7.82 8.30 8.96
20 5.6 6.16 6.66 7.20 7.77
HSI, PLL off, all 16 3.9 4.70 5.31 6.08 6.57
Supply peripherals
1 0.6 0.78 1.33 1.98 2.14
IDD current in enabled(2)(3) mA
Run mode 100 14.0 15.48 16.08 16.83 18.51
84 11.3 12.23 12.75 13.41 16.09
External clock,
PLL ON, all 64 7.9 8.84 9.31 10.01 11.61
peripherals 50 6.2 7.06 7.53 8.19 9.50
disabled(3)
25 3.4 4.18 4.61 5.13 5.95
20 2.9 3.44 3.98 4.65 5.39
HSI, PLL off, 16 2.0 2.51 3.13 3.89 4.51
all peripherals
1 0.5 0.64 1.21 1.90 2.21
disabled(3)
1. Based on characterization, not tested in production unless otherwise specified
2. When analog peripheral blocks such as ADC, HSE, LSE, HSI, or LSI are ON, an additional power consumption has to be
considered.
3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA for the
analog part.

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Table 23. Typical and maximum current consumption, code with data processing (ART
accelerator disabled) running from SRAM - VDD = 3.6 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions Unit
(MHz) TA= TA= TA= TA= TA=
25 °C 25 °C 85 °C 105 °C 125 °C

100 28.4 28.80(3) 30.84 32.39 34.40(3)

84 23.0 24.09(3) 25.20 26.57 28.30(3)
External clock,
PLL ON, 64 16.0 16.83(3) 17.77 19.12 20.90(3)
all peripherals 50 12.6 13.46 13.98 14.68 15.85
enabled(2)
25 6.8 7.63 8.14 8.61 9.30
20 5.8 6.31 6.74 7.43 8.03
(4),
HSI, PLL OFF 16 3.9 4.65 5.33 6.11 6.60
all peripherals
enabled(2) 1 0.6 0.78 1.34 2.00 2.16
Supply current
IDD mA
in Run mode 100 14.3 15.09(3) 16.22 17.90 19.72(3)
84 11.6 12.28(3) 13.36 14.99 16.80(3)
External clock,
PLL ON, 64 8.2 8.75(3) 9.68 11.21 13.00(3)
all peripherals 50 6.5 7.21 7.69 8.47 9.74
disabled(2)
25 3.6 4.22 4.68 5.29 6.08
20 3.2 3.65 4.18 4.94 5.68
HSI, PLL OFF, 16 2.0 2.48 3.12 3.94 4.54
all peripherals
disabled(2) 1 0.5 0.65 1.26 1.94 2.24

1. Based on characterization, not tested in production unless otherwise specified

2. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA for the
analog part.
3. Tested in production
4. When analog peripheral blocks such as ADC, HSE, LSE, HSI, or LSI are ON, an additional power consumption has to be
considered

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Table 24. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory- VDD = 1.7 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 26.9 28.78 29.86 31.30 33.08

84 21.6 23.14 23.93 24.89 26.31
External clock,
PLL ON, 64 15.0 16.08 16.70 17.46 18.45
all peripherals 50 11.8 12.74 13.33 14.07 14.87
enabled(2)(3)
25 6.3 7.13 7.69 8.30 8.77
20 5.5 6.09 6.64 7.30 7.72

HSI, PLL OFF, 16 3.9 4.20 4.78 5.49 5.81

all peripherals enabled(2) 1 0.9 0.98 1.50 2.20 2.33
Supply current
IDD mA
in Run mode 100 12.7 13.82 14.71 15.76 17.53
84 10.3 11.20 11.97 12.96 14.41
External clock,
PLL ON(4) 64 7.2 7.87 8.57 9.41 10.47
all peripherals 50 5.7 6.33 7.02 7.87 8.75
disabled(2)
25 3.2 3.77 4.38 5.13 5.71
20 2.9 3.31 3.93 4.69 5.22

HSI, PLL OFF, all 16 2.1 2.25 2.83 3.56 3.96

peripherals disabled(2) 1 0.7 0.83 1.42 2.12 2.36
1. Based on characterization, not tested in production unless otherwise specified.
2. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
3. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.
4. Refer to Table 45 and RM0383 for the possible PLL VCO setting

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Table 25. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled except prefetch) running from Flash memory - VDD = 3.6 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 27.2 28.70(4) 30.14 31.98 33.80

84 21.9 23.60 24.31 25.37 26.82
External clock, 64 15.2 16.45 17.03 17.87 18.89
PLL ON(2),
all peripherals enabled(3) 50 12.1 13.12 13.67 14.46 15.29
25 6.6 7.59 8.12 8.77 9.27
20 5.7 6.51 7.07 7.77 8.21

HSI, PLL OFF, all 16 4.0 4.32 4.88 5.69 6.01

peripherals enabled(3) 1 0.8 1.14 1.67 2.38 2.51
Supply current
IDD mA
in Run mode 100 13.0 14.06(4) 15.34 17.27 19.20
84 10.5 11.21 12.16 13.47 14.98
External clock, PLL
ON(2) 64 7.5 8.29 9.01 9.88 10.99
all peripherals 50 6.0 6.73 7.32 8.27 9.20
disabled(3)
25 3.5 4.18 4.73 5.57 6.19
20 3.1 3.72 4.25 5.10 5.67

HSI, PLL OFF, all 16 2.1 2.41 2.94 3.75 4.17

peripherals disabled(3) 1 0.7 0.99 1.51 2.30 2.56
1. Based on characterization, not tested in production unless otherwise specified.
2. Refer to Table 45 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
4. Tested in production.

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Table 26. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 3.6 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 36.3 38.95 41.19 42.95 45.40

84 31.1 33.22 34.81 36.10 38.16
External clock, 64 22.3 23.97 25.10 26.23 27.73
PLL ON(2),
all peripherals enabled(3) 50 18.3 19.77 20.65 21.73 22.97
25 10.1 11.39 12.16 13.11 13.86
20 8.6 9.60 10.25 11.06 11.69

HSI, PLL OFF, all 16 6.3 6.85 7.51 8.38 8.85

peripherals enabled(3) 1 1.1 1.39 1.82 2.61 2.76
Supply current
IDD mA
in Run mode 100 22.1 23.95 25.80 27.50 30.58
84 19.7 20.79 22.52 24.12 26.82

External clock, PLL ON(2) 64 14.5 15.88 17.21 18.54 20.62

all peripherals disabled(3) 50 12.2 13.38 14.59 15.79 17.56
25 7.0 8.05 8.89 10.16 11.29
20 6.0 6.84 7.51 8.52 9.47

HSI, PLL OFF, all 16 4.4 4.91 5.56 6.54 7.28

peripherals disabled(3) 1 0.9 1.25 1.79 2.59 2.88
1. Based on characterization, not tested in production unless otherwise specified.
2. Refer to Table 45 and RM0383 for the possible PLL VCO setting
3. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).

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Table 27. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator disabled) running from Flash memory - VDD = 1.7 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 35.9 38.55 40.77 42.52 44.95

84 29.4 31.59 33.12 34.42 36.38
External clock,
PLL ON, 64 22.4 24.02 25.15 26.28 27.78
all peripherals 50 18.6 20.07 21.08 22.05 23.30
enabled(2)(3)
25 10.3 11.62 12.39 13.34 14.10
20 8.9 9.85 10.59 11.32 11.96

HSI, PLL OFF, all 16 6.7 7.26 8.04 8.80 9.30

peripherals enabled(2)(3) 1 1.1 1.44 1.99 2.66 2.81
Supply current
IDD mA
in Run mode 100 21.7 23.55 25.48 27.07 30.10
84 18.0 19.16 20.93 22.39 24.89

External clock, PLL ON(3) 64 14.6 15.93 17.32 18.59 20.68

all peripherals disabled 50 12.5 13.63 14.90 16.07 17.87
25 7.2 8.25 9.26 10.26 11.41
20 6.3 7.15 7.99 8.84 9.83

HSI, PLL OFF, all 16 4.9 5.37 6.20 7.03 7.82

peripherals disabled(3) 1 1.0 1.30 1.91 2.65 2.95
1. Based on characterization, not tested in production unless otherwise specified.
2. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
3. When the ADC is ON (ADON bit set in the ADC_CR2), add an additional power consumption of 1.6mA per ADC for the
analog part.

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Table 28. Typical and maximum current consumption in run mode, code with data processing
(ART accelerator enabled with prefetch) running from Flash memory - VDD = 3.6 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 38.9 41.10 42.85 44.28 46.80

84 32.8 34.61 35.77 36.72 38.81
External clock, 64 23.6 24.96 25.84 26.64 28.16
PLL ON,
all peripherals enabled(2) 50 18.7 19.90 20.67 21.45 22.67
25 10.1 11.11 11.70 12.40 13.10
20 8.6 9.46 10.07 10.81 11.43

HSI, PLL OFF, 16 6.3 6.77 7.42 8.21 8.68

all peripherals enabled 1 1.1 1.35 1.84 2.59 2.74
Supply current
IDD mA
in Run mode 100 24.7 26.11 27.59 28.84 32.07
84 21.4 22.22 23.53 24.66 27.42
External clock, 64 15.8 16.80 17.90 18.99 21.12
PLL ON(2)
all peripherals disabled 50 12.6 13.51 14.52 15.54 17.28
25 7.0 7.85 8.57 9.39 10.44
20 6.0 6.67 7.37 8.26 9.19

HSI, PLL OFF, 16 4.5 4.80 5.47 6.33 7.04

all peripherals disabled 1 0.9 1.25 1.81 2.58 2.87
1. Based on characterization, not tested in production unless otherwise specified.
2. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).

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Table 29. Typical and maximum current consumption in Sleep mode - VDD = 3.6 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 17.7 18.48(3) 19.83 21.70 24.00

84 14.3 15.39 16.31 17.48 19.34
All peripherals enabled(2),
External clock, 64 10.0 10.71 11.35 12.13 13.41
PLL ON, 50 7.9 8.53 9.13 9.89 10.94
Flash deep power down
25 4.4 4.99 5.46 6.11 6.75
20 4.0 4.42 4.95 5.64 6.23
All peripherals enabled(2), 16 2.7 2.83 3.47 4.21 4.66
HSI, PLL OFF,
1 0.5 0.68 1.25 1.92 2.12
Flash deep power down
100 18.1 19.39 20.70 22.24 24.59
84 14.7 15.80 16.71 17.92 19.82
All peripherals enabled(2), 64 10.3 11.02 11.66 12.45 13.77
External clock,
PLL ON Flash ON 50 8.2 8.88 9.53 10.26 11.35
25 4.7 5.30 5.82 6.53 7.23
20 4.2 4.67 5.18 5.90 6.53

All peripherals enabled(2), 16 2.7 3.10 3.72 4.50 4.98

HSI, PLL OFF, Flash ON 1 0.8 0.93 1.50 2.18 2.41
Supply current
IDD mA
in Sleep mode 100 3.2 3.42 (3)
4.98 6.88 9.70
84 2.6 3.09 3.63 4.44 6.26
All peripherals disabled,
External clock, 64 2.0 2.33 2.81 3.46 4.87
PLL ON(2), 50 1.7 2.02 2.54 3.12 4.39
Flash deep power down
25 1.2 1.63 2.21 2.89 4.08
20 1.3 1.62 2.09 2.78 3.92
All peripherals disabled, 16 0.5 0.63 1.24 1.92 2.71
HSI, PLL OFF(2),
1 0.4 0.53 1.14 1.82 2.57
Flash deep power down
100 3.6 4.17 4.84 5.63 7.93
84 3.0 3.49 4.13 4.88 6.88
All peripherals disabled, 64 2.3 2.69 3.23 3.85 5.42
External clock,
PLL ON(2), Flash ON 50 2.0 2.33 2.83 3.45 4.86
25 1.4 1.88 2.39 3.06 4.31
20 1.5 1.88 2.43 3.06 4.31
All peripherals disabled, 16 0.8 0.91 1.50 2.22 3.13
HSI, PLL OFF(2),
1 0.7 0.78 1.37 2.09 2.95
Flash ON
1. Based on characterization, not tested in production unless otherwise specified.
2. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).
3. Tested in production.

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Table 30. Typical and maximum current consumption in Sleep mode - VDD = 1.7 V
Typ Max(1)
fHCLK
Symbol Parameter Conditions
(MHz) TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

100 17.3 18.62 19.90 21.40 23.67

84 14.0 15.08 16.04 17.16 18.97
External clock,
PLL ON, 64 9.7 10.41 11.02 11.80 13.06
Flash deep power down, 50 7.6 8.27 8.89 9.62 10.64
all peripherals enabled(2)
25 4.2 4.79 5.35 6.00 6.63
20 3.7 4.11 4.67 5.31 5.88
HSI, PLL OFF(2), 16 2.4 2.81 3.45 4.20 4.64
Flash deep power down,
Supply current all peripherals enabled 1 0.5 0.67 1.27 1.91 2.11
IDD mA
in Sleep mode
100 17.8 19.08 20.35 21.90 24.22
84 14.4 15.49 16.42 17.59 19.46
External clock, PLL ON(2) 64 10.0 10.76 11.43 12.18 13.47
all peripherals enabled,
Flash ON 50 7.9 8.58 9.19 9.94 10.99
25 4.4 4.99 5.54 6.21 6.87
20 4.0 4.42 4.95 5.64 6.23
(2),
HSI, PLL OFF all 16 2.7 3.09 3.75 4.49 4.97
peripherals enabled,
1 0.8 0.93 1.52 2.18 2.41
Flash ON
100 2.9 3.51 4.14 4.90 5.59
84 2.4 2.83 3.46 4.16 4.74
All peripherals disabled,
External clock, 64 1.7 2.08 2.59 3.18 3.63
PLL ON(2), 50 1.4 1.77 2.23 2.84 3.24
Flash deep power down
25 1.0 1.37 1.88 2.50 2.85
20 1.3 1.37 1.88 2.50 2.85
All peripherals disabled, 16 0.5 0.63 1.23 1.91 2.18
HSI, PLL OFF(2),
Supply current Flash deep power down 1 0.4 0.52 1.13 1.81 2.07
IDD mA
in Sleep mode 100 3.3 3.22 3.98 4.90 5.59
84 2.8 2.62 3.30 4.16 4.74
All peripherals disabled, 64 2.1 1.89 2.50 3.18 3.63
External clock, PLL
ON(2), Flash ON 50 1.7 1.58 2.16 2.84 3.24
25 1.2 1.28 1.82 2.50 2.85
20 1.3 1.28 1.82 2.50 2.85
All peripherals disabled, 16 0.8 0.88 1.36 1.91 2.18
HSI, PLL OFF(2), Flash
1 0.7 0.77 1.26 1.81 2.07
ON
1. Based on characterization, not tested in production unless otherwise specified.
2. Add an additional power consumption of 1.6 mA per ADC for the analog part. In applications, this consumption occurs only
while the ADC is ON (ADON bit is set in the ADC_CR2 register).

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Table 31. Typical and maximum current consumptions in Stop mode - VDD = 1.7 V
Typ(1) Max(1)
Symbol Conditions Parameter Unit
TA = TA = TA = TA = TA =
25 °C 25 °C 85 °C 105 °C 125 °C

Flash in Stop mode, all Main regulator usage 121.1 168.0 648.7 1213.0 2970.0
oscillators OFF, no
independent watchdog Low power regulator usage 50.8 74.8 651.3 1328.0 2730.0

IDD_STOP Flash in Deep power Main regulator usage 79.1 122.0 609.1 1181.0 2540.0 µA
down mode, all Low power regulator usage 22.4 74.7 631.9 1286.0 2680.0
oscillators OFF, no
Low power low voltage regulator
independent watchdog 18.5 40.0 548.3 1145.0 2480.0
usage
1. Based on characterization, not tested in production.

Table 32. Typical and maximum current consumption in Stop mode - VDD=3.6 V
Typ Max(1)
Symbol Conditions Parameter Unit
TA = TA = TA = TA = TA =
25 °C 25 °C 85 °C 105 °C 125 °C
Flash in Stop mode, all Main regulator usage 124.0 179.0(2) 907.2 1762.0 3000.0(2)
oscillators OFF, no
independent watchdog Low power regulator usage 52.8 75.0(2) 757.6 1559.0 2750.0

IDD_STOP Flash in Deep power Main regulator usage 87.6 123.0 698.5 1374.0 2550.0 µA
down mode, all Low power regulator usage 26.2 74.7 737.2 1515.0 2700.0
oscillators OFF, no
Low power low voltage
independent watchdog 20.1 40.0(2) 619.1 1299.0 2500.0(2)
regulator usage
1. Based on characterization, not tested in production.
2. Tested in production.

Table 33. Typical and maximum current consumption in Standby mode - VDD= 1.7 V
Typ(1) Max(2)
Symbol Parameter Conditions TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

Low-speed oscillator (LSE in low drive

1.8 3.7 12.9 23.7 50.7
mode) and RTC ON
Supply current in
IDD_STBY Low-speed oscillator (LSE in high drive µA
Standby mode 2.6 4.5 13.7 24.5 51.6
mode) and RTC ON
RTC and LSE OFF 1.1 3.0 12.2 23 50.0
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Based on characterization, not tested in production unless otherwise specified.

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Table 34. Typical and maximum current consumption in Standby mode - VDD= 3.6 V
Typ(1) Max(2)
Symbol Parameter Conditions TA = TA = TA = TA = TA = Unit
25 °C 25 °C 85 °C 105 °C 125 °C

Low-speed oscillator (LSE in low drive

3.7 5.4 17.2 31.2 62.3
mode) and RTC ON
Supply current in
IDD_STBY Low-speed oscillator (LSE in high drive µA
Standby mode 4.5 6.2 18.0 32.0 63.2
mode) and RTC ON
RTC and LSE OFF 2.6 4.0 16.0 30.0 61.0(3)
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed by characterization, not tested in production unless otherwise specified.
3. Tested in production.

Table 35. Typical and maximum current consumptions in VBAT mode

Typ Max(2)

TA = TA = TA =
TA = 25 °C
Symbol Parameter Conditions(1) 85 °C 105 °C 125 °C Unit

VBAT = VBAT= VBAT = VBAT =

VBAT = 3.6 V
1.7 V 2.4 V 3.3 V 3.6 V

Low-speed oscillator (LSE in

0.74 0.87 1.04 1.11 3.0 5.0 10.0
Backup low-drive mode) and RTC ON
domain
IDD_VBAT Low-speed oscillator (LSE in µA
supply 1.52 1.70 1.97 2.09 3.8 5.8 11.6
high-drive mode) and RTC ON
current
RTC and LSE OFF 0.04 0.04 0.05 0.05 2.0 4.0 8.0
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization, not tested in production.

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Figure 24. Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
“low power” mode selection)



 


 


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Figure 25. Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
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I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 57: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 37: Peripheral current
consumption), the I/Os used by an application also contribute to the current consumption.
When an I/O pin switches, it uses the current from the MCU supply voltage to supply the I/O
pin circuitry and to charge/discharge the capacitive load (internal or external) connected to
the pin:

I SW = V DD × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

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Table 36. Switching output I/O current consumption

I/O toggling
Symbol Parameter Conditions(1) Typ Unit
frequency (fSW)

2 MHz 0.05
8 MHz 0.15
25 MHz 0.45
VDD = 3.3 V
50 MHz 0.85
C = CINT
60 MHz 1.00
84 MHz 1.40
90 MHz 1.67
2 MHz 0.10
8 MHz 0.35

VDD = 3.3 V 25 MHz 1.05

CEXT = 0 pF 50 MHz 2.20
C = CINT + CEXT + CS 60 MHz 2.40
84 MHz 3.55
90 MHz 4.23

I/O switching 2 MHz 0.20

IDDIO mA
current 8 MHz 0.65

VDD = 3.3 V 25 MHz 1.85

CEXT =10 pF 50 MHz 2.45
C = CINT + CEXT + CS 60 MHz 4.70
84 MHz 8.80
90 MHz 10.47
2 MHz 0.25

VDD = 3.3 V 8 MHz 1.00

CEXT = 22 pF 25 MHz 3.45
C = CINT + CEXT + CS 50 MHz 7.15
60 MHz 11.55
2 MHz 0.32
VDD = 3.3 V
8 MHz 1.27
CEXT = 33 pF
25 MHz 3.88
C = CINT + CEXT + CS
50 MHz 12.34
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).

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On-chip peripheral current consumption

The MCU is placed under the following conditions:
• At startup, all I/O pins are in analog input configuration.
• All peripherals are disabled unless otherwise mentioned.
• The ART accelerator is ON.
• Voltage Scale 2 mode selected, internal digital voltage V12 = 1.26 V.
• HCLK is the system clock at 100 MHz. fPCLK1 = fHCLK/2, and fPCLK2 = fHCLK.
The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off,
– with only one peripheral clocked on,
– scale 1 with fHCLK = 100 MHz,
– scale 2 with fHCLK = 84 MHz,
– scale 3 with fHCLK = 64 MHz.
• Ambient operating temperature is 25 °C and VDD=3.3 V.

Table 37. Peripheral current consumption

IDD (Typ)
Peripheral Unit
Scale 1 Scale 2 Scale 3

GPIOA 1.84 1.75 1.55

GPIOB 1.90 1.80 1.61
GPIOC 1.77 1.67 1.50
GPIOD 1.67 1.58 1.42
GPIOE 1.75 1.67 1.48
AHB1 GPIOF 1.65 1.56 1.39
GPIOG 1.65 1.56 1.39
GPIOH 0.62 0.57 0.53 µA/MHz
CRC 0.26 0.25 0.22
(1)
DMA1 1,71N+2,98 1,62N+2,87 1,45N+2,58
(1)
DMA2 1,78N+2,62 1,70N+2.53 1,52N+2.26
RNG 0.77 0.74 0.66
AHB2
USB_OTG_FS 19.68 18.73 16.78
FSMC 5.36 5.11 4.56
AHB3
QSPI 9.99 9.51 8.53

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Table 37. Peripheral current consumption (continued)

IDD (Typ)
Peripheral Unit
Scale 1 Scale 2 Scale 3

AHB-APB1 bridge 1.10 1.00 0.94

TIM2 13.62 12.95 11.59
TIM3 10.56 10.05 8.97
TIM4 10.72 10.21 9.12
TIM5 13.46 12.83 11.47
TIM6 2.92 2.79 2.47
TIM7 2.72 2.60 2.31
TIM12 6.22 5.93 5.28
TIM13 4.70 4.48 3.97
TIM14 4.60 4.38 3.91
WWDG 1.76 1.67 1.47
APB1 µA/MHz
SPI2/I2S2 4.04 3.83 3.41
SPI3/I2S3 4.26 4.05 3.62
USART2 4.42 4.19 3.75
USART3 4.44 4.21 3.75
I2C1 4.32 4.10 3.66
I2C2 4.36 4.17 3.69
I2C3 4.36 4.14 3.69
I2CFMP1 5.96 5.69 5.06
CAN1 6.18 5.90 5.25
CAN2 5.86 5.52 4.97
PWR 1.82 1.69 1.56

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Table 37. Peripheral current consumption (continued)

IDD (Typ)
Peripheral Unit
Scale 1 Scale 2 Scale 3

AHB-APB2 bridge 0.09 0.07 0.08

TIM1 6.83 6.46 5.81
TIM8 6.63 6.29 5.63
USART1 3.31 3.11 2.80
USART6 3.21 3.02 2.73
ADC1 3.51 3.31 2.98
SDIO 3.74 3.51 3.17
APB2 SPI1 1.47 1.36 1.23
µA/MHz
SPI4 1.56 1.45 1.31
SYSCFG 0.54 0.49 0.45
TIM9 3.09 2.92 2.63
TIM10 1.91 1.79 1.61
TIM11 1.93 1.81 1.64
SPI5 1.54 1.44 1.30
DFSDM1 4.25 4.02 3.61
Bus Matrix 3.23 3.06 2.73
1. N is the number of stream enable (1...8).

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6.3.7 Wakeup time from low-power modes

The wakeup times given in Table 38 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
• For Stop or Sleep modes: the wakeup event is WFE.
• WKUP (PA0/PC0/PC1) pins are used to wakeup from Standby, Stop and Sleep modes.

Figure 26. Low-power mode wakeup

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All timings are derived from tests performed under ambient temperature and VDD=3.3 V.

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Table 38. Low-power mode wakeup timings(1)

Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit

clk
tWUSLEEP - - 4 6
cycles
Wakeup from Sleep mode
Flash memory in Deep
tWUSLEEPFDSM - - 50.0 µs
power down mode
Main regulator - 12.9 15.0
Main regulator, Flash
memory in Deep power - 104.9 120.0
down mode
Wakeup from STOP mode Wakeup from Stop mode,
tWUSTOP
Code execution on Flash regulator in low power - 20.8 28.0
mode(2)
Regulator in low power
mode, Flash memory in - 112.9 130.0
Deep power down mode(2)
Main regulator with Flash in
µs
Stop mode or Deep power - 4.9 7.0
down
Wakeup from STOP mode
tWUSTOP Wakeup from Stop mode,
code execution on RAM(3)
regulator in low power mode
- 12.8 20.0
and Flash in Stop mode or
Deep power down(2)
Wakeup from Standby
tWUSTDBY - - 316.8 400.0
mode
From Flash_Stop mode - 11.0
tWUFLASH Wakeup of Flash From Flash Deep power
- 50.0
down mode
1. Guaranteed by characterization, not tested in production.
2. The specification is valid for wakeup from regulator in low power mode or low power low voltage mode, since the timing
difference is negligible.
3. For the faster wakeup time for code execution on RAM, the Flash must be in STOP or DeepPower Down mode (see
reference manual RM0402).

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6.3.8 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 57. However, the recommended clock input
waveform is shown in Figure 27.
The characteristics given in Table 39 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 16.

Table 39. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

External user clock source

fHSE_ext 1 - 50 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
tw(HSE)
OSC_IN high or low time(1) 5 - -
tw(HSE)
ns
tr(HSE)
OSC_IN rise or fall time(1) - - 10
tf(HSE)
Cin(HSE) OSC_IN input capacitance(1) - 5 - pF
DuCy(HSE) Duty cycle 45 - 55 %
IL OSC_IN Input leakage current VSS ≤VIN ≤VDD - - ±1 µA
1. Guaranteed by design, not tested in production.

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Electrical characteristics STM32F412xE/G

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 57. However, the recommended clock input
waveform is shown in Figure 28.
The characteristics given in Table 40 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 16.

Table 40. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage V
VLSEL OSC32_IN input pin low level voltage VSS - 0.3VDD
tw(LSE)
OSC32_IN high or low time(1) 450 - -
tf(LSE)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 50
tf(LSE)
Cin(LSE) OSC32_IN input capacitance(1) - 5 - pF
DuCy(LSE) Duty cycle 30 - 70 %
IL OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD - - ±1 µA
1. Guaranteed by design, not tested in production.

Figure 27. High-speed external clock source AC timing diagram

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TR(3% TF(3% T7(3% T7(3% T

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STM32F412xE/G Electrical characteristics

Figure 28. Low-speed external clock source AC timing diagram

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High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 41. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

Table 41. HSE 4-26 MHz oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency 4 - 26 MHz

RF Feedback resistor - 200 - kΩ
VDD=3.3 V,
ESR= 30 Ω, - 450 -
CL=5 pF @25 MHz
IDD HSE current consumption µA
VDD=3.3 V,
ESR= 30 Ω, - 530 -
CL=10 pF @25 MHz
ACCHSE(2) HSE accuracy - -500 - 500 ppm
Gm_crit_max Maximum critical crystal gm Startup - - 1 mA/V
(3)
tSU(HSE) Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design, not tested in production.
2. This parameter depends on the crystal used in the application. The minimum and maximum values must
be respected to comply with USB standard specifications.
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer

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For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (Typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 29). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 29. Typical application with an 8 MHz crystal

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1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 42. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).
The LSE high-power mode allows to cover a wider range of possible crystals but with a cost
of higher power consumption.

Table 42. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)

Symbol Parameter Conditions Min Typ Max Unit

RF Feedback resistor - - 18.4 - MΩ

Low-power mode
- - 1
IDD LSE current consumption (default) µA
High-drive mode - - 3
ACCLSE(2) LSE accuracy - -500 - 500 ppm
Startup, low-power
- - 0.56
mode
Gm_crit_max Maximum critical crystal gm µA/V
Startup, high-drive
- - 1.50
mode
tSU(LSE)(3) startup time VDD is stabilized - 2 - s
1. Guaranteed by design, not tested in production.

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2. This parameter depends on the crystal used in the application. Refer to the application note AN2867.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is guaranteed by characterization and not tested in
production. It is measured for a standard crystal resonator and it can vary significantly with the crystal
manufacturer.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
For information about the LSE high-power mode, refer to the reference manual RM0383.

Figure 30. Typical application with a 32.768 kHz crystal

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6.3.9 Internal clock source characteristics

The parameters given in Table 43 and Table 44 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 16.

High-speed internal (HSI) RC oscillator

Table 43. HSI oscillator characteristics (1)

L

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - - 16 - MHz

HSI user trimming step(2) - - 1 %
TA = -40 to 125 °C(3) -8 - 5.5 %
Accuracy of the HSI
ACCHSI TA = -40 to 105 °C(3) -8 - 4.5 %
oscillator Factory-calibrated
TA = -10 to 85 °C (3)
-4 - 4 %
TA = 25 °C(4) -1 - 1 %
tsu(HSI) (2) HSI oscillator startup time - - 2.2 4 µs
HSI oscillator power
IDD(HSI)(2) - - 60 80 µA
consumption
1. VDD = 3.3 V, TA = -40 to 125 °C unless otherwise specified.
2. Guaranteed by design, not tested in production
3. Based on characterization, not tested in production
4. Factory calibrated, parts not soldered.

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Figure 31. ACCHSI versus temperature






!##(3)


       4! #



-IN
-AX
 4YPICAL


-36

1. Guaranteed by characterization, not tested in production.

Low-speed internal (LSI) RC oscillator

Table 44. LSI oscillator characteristics (1)

Symbol Parameter Min Typ Max Unit

fLSI(2) Frequency 17 32 47 kHz

tsu(LSI) (3) LSI oscillator startup time - 15 40 µs
IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA
1. VDD = 3 V, TA = -40 to 125 °C unless otherwise specified.
2. Guaranteed by characterization, not tested in production.
3. Guaranteed by design, not tested in production.

Figure 32. ACCLSI versus temperature


MAX
 AVG
MIN

.ORMALIZEDDEVIATI ON












               
4EMPERAT URE #

-36

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6.3.10 PLL characteristics

The parameters given in Table 45 and Table 46 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 16.

Table 45. Main PLL characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock(1) - 0.95(2) 1 2.10 MHz

fPLL_OUT PLL multiplier output clock - 24 - 100 MHz
48 MHz PLL multiplier output
fPLL48_OUT - - 48 75 MHz
clock
fVCO_OUT PLL VCO output - 100 - 432 MHz
PLL lock time VCO freq = 100 MHz 75 - 200
tLOCK µs
VCO freq = 432 MHz 100 - 300
Cycle-to-cycle jitter RMS - 25 -
peak
to - ±150 -
System clock peak
Period Jitter 100 MHz RMS - 15 -
Jitter(3) ps
peak
to - ±200 -
peak
Cycle to cycle at 1 MHz
Bit Time CAN jitter - 330 -
on 1000 samples.
VCO freq = 100 MHz 0.15 0.40
IDD(PLL)(4) PLL power consumption on VDD -
VCO freq = 432 MHz 0.45 0.75
mA
PLL power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLL)(4) -
VDDA VCO freq = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between PLL and PLLI2S.
2. Guaranteed by design, not tested in production.
3. The use of two PLLs in parallel could degraded the Jitter up to +30%.
4. Guaranteed by characterization, not tested in production.

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Table 46. PLLI2S (audio PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLI2S_IN PLLI2S input clock(1) - 0.95(2) 1 2.10

fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 MHz
fVCO_OUT PLLI2S VCO output - 100 - 432
VCO freq = 100 MHz 75 - 200
tLOCK PLLI2S lock time µs
VCO freq = 432 MHz 100 - 300

Cycle to cycle at RMS - 90 -

12.288 MHz on peak
48 kHz period, to - ±280 -
N=432, R=5 peak
Master I2S clock jitter
Average frequency of
Jitter(3)
12.288 MHz ps
- 90 -
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
WS I2S clock jitter - 400 -
on 1000 samples
PLLI2S power consumption on VCO freq = 100 MHz 0.15 0.40
IDD(PLLI2S)(4) -
VDD VCO freq = 432 MHz 0.45 0.75
mA
PLLI2S power consumption on VCO freq = 100 MHz 0.30 0.40
IDDA(PLLI2S)(4) -
VDDA VCO freq = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design, not tested in production.
3. Value given with main PLL running.
4. Guaranteed by characterization, not tested in production.

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6.3.11 PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature allows to reduce electromagnetic
interferences (see Table 53: EMI characteristics for LQFP144). It is available only on the
main PLL.

Table 47. SSCG parameter constraints

Symbol Parameter Min Typ Max(1) Unit

fMod Modulation frequency - - 10 kHz

md Peak modulation depth 0.25 - 2 %
MODEPER * INCSTEP (Modulation period) * (Increment Step) - - 215 -1 -
1. Guaranteed by design, not tested in production.

Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
MODEPER = round [ f PLL_IN ⁄ ( 4 × f Mod ) ]

fPLL_IN and fMod must be expressed in Hz.

As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
6 3
MODEPER = round [ 10 ⁄ ( 4 × 10 ) ] = 250

Equation 2
Equation 2 allows to calculate the increment step (INCSTEP):
15
INCSTEP = round [ ( ( 2 – 1 ) × md × PLLN ) ⁄ ( 100 × 5 × MODEPER ) ]

fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
15
INCSTEP = round [ ( ( 2 – 1 ) × 2 × 240 ) ⁄ ( 100 × 5 × 250 ) ] = 126md(quantitazed)%

An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
15
md quantized % = ( MODEPER × INCSTEP × 100 × 5 ) ⁄ ( ( 2 – 1 ) × PLLN )

As a result:
15
md quantized % = ( 250 × 126 × 100 × 5 ) ⁄ ( ( 2 – 1 ) × 240 ) = 2.002%(peak)

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Figure 33 and Figure 34 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.

Figure 33. PLL output clock waveforms in center spread mode

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Figure 34. PLL output clock waveforms in down spread mode

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6.3.12 Memory characteristics

Flash memory
The characteristics are given at TA = -40 to 125 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.

Table 48. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max Unit

Write / Erase 8-bit mode, VDD = 1.7 V - 5 -

IDD Supply current Write / Erase 16-bit mode, VDD = 2.1 V - 8 - mA
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -

Table 49. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Program/erase parallelism
tprog Word programming time - 16 100(2) µs
(PSIZE) = x 8/16/32
Program/erase parallelism
- 400 800
(PSIZE) = x 8
Program/erase parallelism
tERASE16KB Sector (16 KB) erase time - 300 600 ms
(PSIZE) = x 16
Program/erase parallelism
- 250 500
(PSIZE) = x 32
Program/erase parallelism
- 1200 2400
(PSIZE) = x 8
Program/erase parallelism
tERASE64KB Sector (64 KB) erase time - 700 1400 ms
(PSIZE) = x 16
Program/erase parallelism
- 550 1100
(PSIZE) = x 32
Program/erase parallelism
- 2 4
(PSIZE) = x 8
Program/erase parallelism
tERASE128KB Sector (128 KB) erase time - 1.3 2.6 s
(PSIZE) = x 16
Program/erase parallelism
- 1 2
(PSIZE) = x 32
Program/erase parallelism
- 16 32
(PSIZE) = x 8
Program/erase parallelism
tME Mass erase time - 11 22 s
(PSIZE) = x 16
Program/erase parallelism
- 8 16
(PSIZE) = x 32

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Table 49. Flash memory programming (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

32-bit program operation 2.7 - 3.6 V

Vprog Programming voltage 16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.7 - 3.6 V
1. Guaranteed by characterization, not tested in production.
2. The maximum programming time is measured after 100K erase operations.

Table 50. Flash memory programming with VPP voltage

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

tprog Double word programming - 16 100(2) µs

tERASE16KB Sector (16 KB) erase time TA = 0 to +40 °C - 230 -
tERASE64KB Sector (64 KB) erase time VDD = 3.3 V - 490 - ms
tERASE128KB Sector (128 KB) erase time VPP = 8.5 V - 875 -
tME Mass erase time - 6.9 - s
Vprog Programming voltage - 2.7 - 3.6 V
VPP VPP voltage range - 7 - 9 V
Minimum current sunk on
IPP - 10 - - mA
the VPP pin
Cumulative time during
tVPP(3) - - - 1 hour
which VPP is applied
1. Guaranteed by design, not tested in production.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.

Table 51. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = -40 to +85 °C (temp. range 6)

NEND Endurance TA = -40 to +105 °C (temp. range 7) 10 kcycles
TA = -40 to +125 °C (temp. range 3)
1 kcycle(2) at TA = 85 °C 30
1 kcycle(2) at TA = 105 °C 10
tRET Data retention Years
(2)
1 kcycle at TA = 125 °C 3
10 kcycle(2) at TA = 55 °C 20
1. Guaranteed by characterization, not tested in production.
2. Cycling performed over the whole temperature range.

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6.3.13 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 53. They are based on the EMS levels and classes
defined in application note AN1709.

Table 52. EMS characteristics for LQFP144 package

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, LQFP144

Voltage limits to be applied on any I/O pin
VFESD TA = +25 °C, fHCLK = 100 MHz, 2B
to induce a functional disturbance
conforms to IEC 61000-4-2

Fast transient voltage burst limits to be VDD = 3.3 V, LQFP144

VEFTB applied through 100 pF on VDD and VSS TA = +25 °C, fHCLK = 100 MHz, 4B
pins to induce a functional disturbance conforms to IEC 61000-4-4

When the application is exposed to a noisy environment, it is recommended to avoid pin

exposition to disturbances. The pins showing a middle range robustness are: PA0, PA1,
PA2, on LQFP144 packages and PDR_ON on WLCSP49.
As a consequence, it is recommended to add a serial resistor (1 kΩ maximum) located as
close as possible to the MCU to the pins exposed to noise (connected to tracks longer than
50 mm on PCB).

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)

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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with IEC61967-2
standard which specifies the test board and the pin loading.

Table 53. EMI characteristics for LQFP144

Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
8/100 MHz

0.1 to 30 MHz 20
VDD = 3.6 V, TA = 25 °C, LQFP144
package, conforming to IEC 61967-2, 30 to 130 MHz 28 dBµV
SEMI Peak level
EEMBC, ART ON, all peripheral clocks 130 MHz to 1 GHz 21
enabled, clock dithering disabled.
EMI Level 3.5 -

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6.3.14 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.

Table 54. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic
VESD(HBM) discharge voltage TA = +25 °C conforming to JESD22-A114 2 2000
(human body model)
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
UFBGA144, UFBGA100, LQFP100, LQFP64, 4 500
UFQFPN48 V
Electrostatic
VESD(CDM) discharge voltage TA = +25 °C conforming to ANSI/ESD STM5.3.1,
3 400
(charge device model) WLCSP64
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
3 250
LQFP144
1. Guaranteed by characterization, not tested in production.

Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
• A supply overvoltage is applied to each power supply pin
• A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.

Table 55. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +125 °C conforming to JESD78A II level A

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6.3.15 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins
(out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator
frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 56.

Table 56. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 pin –0 NA

Injected current on NRST pin –0 NA
Injected current on PB3, PB4, PB5, PB6,
PB7, PB8, PB9, PC13, PC14, PC15, PH1,
IINJ PDR_ON, PC0, PC1,PC2, PC3, PD1, –0 NA mA
PD5, PD6, PD7, PE0, PE2, PE3, PE4,
PE5, PE6
Injected current on any other FT pin –5 NA
Injected current on any other pins –5 +5
1. NA = not applicable.

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.

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6.3.16 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 57 are derived from tests
performed under the conditions summarized in Table 16. All I/Os are CMOS and TTL
compliant.

Table 57. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

FT, TC and NRST I/O input low

1.7 V ≤ VDD ≤ 3.6 V - - 0.3VDD(1)
level voltage
1.75 V ≤ VDD ≤ 3.6 V,
VIL - - V
BOOT0 I/O input low level -40 °C ≤ TA ≤ 125 °C
0.1VDD+0.1(2)
voltage 1.7 V ≤ VDD ≤ 3.6 V,
- -
0 °C ≤ TA ≤ 125 °C
FT, TC and NRST I/O input high
1.7 V ≤ VDD ≤ 3.6 V 0.7VDD(1) - -
level voltage(5)
1.75 V ≤ VDD ≤ 3.6 V,
VIH V
BOOT0 I/O input high level -40 °C ≤ TA ≤ 125 °C
0.17VDD+0.7(2) - -
voltage 1.7 V ≤ VDD ≤ 3.6 V,
0 °C ≤ TA ≤ 125 °C
FT, TC and NRST I/O input
1.7 V ≤ VDD ≤ 3.6 V 10% VDD(2)(3) - -
hysteresis
1.75 V ≤ VDD ≤ 3.6 V,
VHYS V
-40 °C ≤ TA ≤ 125 °C
BOOT0 I/O input hysteresis 0.1 - -
1.7 V ≤ VDD ≤ 3.6 V,
0 °C ≤ TA ≤ 125 °C
I/O input leakage current (4) VSS ≤ VIN ≤ VDD - - ±1
Ilkg I/O FT/TC input leakage current µA
(5) VIN = 5 V - - 3

All pins
except for
Weak pull-up VIN = VSS 30 40 50
PA10
RPU equivalent (OTG_FS_ID)
resistor(6)
PA10
- 7 10 14
(OTG_FS_ID)
kΩ
All pins
except for
Weak pull-down PA10 VIN = VDD 30 40 50
RPD equivalent (OTG_FS_ID)
resistor(7)
PA10
- 7 10 14
(OTG_FS_ID)
CIO(8) I/O pin capacitance - - 5 - pF
1. Guaranteed by test in production.
2. Guaranteed by design, not tested in production.

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3. With a minimum of 200 mV.

4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 56: I/O
current injection susceptibility
5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 56: I/O current injection
susceptibility
6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimum (~10% order).
7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
8. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization, not tested in production.

All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT and TC I/Os is shown in Figure 35.

Figure 35. FT/TC I/O input characteristics

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Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ±20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to ±3mA. When using the PC13 to PC15 GPIOs in output mode, the speed
should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2. In particular:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 14).
• The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
ΣIVSS (see Table 14).

Output voltage levels

Unless otherwise specified, the parameters given in Table 58 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 16. All I/Os are CMOS and TTL compliant.

Table 58. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1) Output low level voltage for an I/O pin CMOS port(2) - 0.4
IIO = +8 mA V
VOH(3) Output high level voltage for an I/O pin 2.7 V ≤ VDD ≤ 3.6 V VDD–0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO =+8 mA V
VOH (3) Output high level voltage for an I/O pin 2.4 -
2.7 V ≤ VDD ≤ 3.6 V
VOL(1) Output low level voltage for an I/O pin IIO = +20 mA - 1.3(4)
V
VOH(3) Output high level voltage for an I/O pin 2.7 V ≤ VDD ≤ 3.6 V VDD–1.3(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +6 mA - 0.4(4)
V
VOH(3) Output high level voltage for an I/O pin 1.8 V ≤ VDD ≤ 3.6 V VDD–0.4(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +4 mA - 0.4(5)
V
VOH(3) Output high level voltage for an I/O pin 1.7 V ≤ VDD ≤ 3.6 V VDD–0.4(5) -
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 14.
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 14 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Guaranteed by characterization results, not tested in production.
5. Guaranteed by design, not tested in production.

Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 36 and
Table 59, respectively.

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Unless otherwise specified, the parameters given in Table 59 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 16.

Table 59. I/O AC characteristics(1)(2)

OSPEEDRy
[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 50 pF, VDD ≥ 2.70 V - - 4

CL = 50 pF, VDD≥ 1.7 V - - 2
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 8
00
CL = 10 pF, VDD ≥ 1.7 V - - 4
Output high to low level fall
tf(IO)out/ CL = 50 pF, VDD = 1.7 V to
time and output low to high - - 100 ns
tr(IO)out 3.6 V
level rise time
CL = 50 pF, VDD ≥ 2.70 V - - 25
CL = 50 pF, VDD ≥ 1.7 V - - 12.5
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 50
CL = 10 pF, VDD ≥ 1.7 V - - 20
01
CL = 50 pF, VDD ≥2.7 V - - 10
Output high to low level fall CL = 50 pF, VDD ≥ 1.7 V - - 20
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD ≥ 2.70 V - - 6
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 10
CL = 40 pF, VDD ≥ 2.70 V - - 50(4)
CL = 40 pF, VDD ≥ 1.7 V - - 25
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.70 V - - 100(4)
CL = 10 pF, VDD ≥ 1.7 V - - 50(4)
10
CL = 40 pF, VDD≥ 2.70 V - - 6
Output high to low level fall CL = 40 pF, VDD≥ 1.7 V - - 10
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD≥ 2.70 V - - 4
level rise time
CL = 10 pF, VDD≥ 1.7 V - - 6
CL = 30 pF, VDD ≥ 2.70 V - - 100(4)
Fmax(IO)out Maximum frequency(3) MHz
CL = 30 pF, VDD ≥ 1.7 V - - 50(4)
CL = 30 pF, VDD ≥ 2.70 V - - 4
11
Output high to low level fall CL = 30 pF, VDD ≥ 1.7 V - - 6
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD≥ 2.70 V - - 2.5
level rise time
CL = 10 pF, VDD≥ 1.7 V - - 4
Pulse width of external signals
- tEXTIpw detected by the EXTI - 10 - - ns
controller

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1. Guaranteed by characterization, not tested in production.

2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of
the GPIOx_SPEEDR GPIO port output speed register.
3. The maximum frequency is defined in Figure 36.
4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.

Figure 36. I/O AC characteristics definition

 

 

 

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6.3.17 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 57).
Unless otherwise specified, the parameters given in Table 60 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 16. Refer to Table 57: I/O static characteristics for the values of VIH and VIL for
NRST pin.

Table 60. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

Weak pull-up equivalent

RPU VIN = VSS 30 40 50 kΩ
resistor(1)
VF(NRST)(2) NRST Input filtered pulse - - - 100 ns
VNF(NRST)(2) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
Internal Reset
TNRST_OUT Generated reset pulse duration 20 - - µs
source
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
2. Guaranteed by design, not tested in production.

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Figure 37. Recommended NRST pin protection

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1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 60. Otherwise the reset is not taken into account by the device.

6.3.18 TIM timer characteristics

The parameters given in Table 61 are guaranteed by design.
Refer to Section 6.3.16: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 61. TIMx characteristics(1)(2)

Symbol Parameter Conditions(3) Min Max Unit

AHB/APBx prescaler=1 1 - tTIMxCLK

or 2 or 4, fTIMxCLK =
100 MHz 11.9 - ns
tres(TIM) Timer resolution time
AHB/APBx prescaler>4, 1 - tTIMxCLK
fTIMxCLK = 100 MHz 11.9 - ns

Timer external clock 0 fTIMxCLK/2 MHz

fEXT
frequency on CH1 to CH4 f
TIMxCLK = 100 MHz 0 50 MHz
ResTIM Timer resolution - 16/32 bit
16-bit counter clock
tCOUNTER period when internal clock fTIMxCLK = 100 MHz 0.0119 780 µs
is selected
65536 ×
- - tTIMxCLK
Maximum possible count 65536
tMAX_COUNT
with 32-bit counter
fTIMxCLK = 100 MHz - 51.1 S
1. TIMx is used as a general term to refer to the TIM1 to TIM11 timers.
2. Guaranteed by design, not tested in production.
3. The maximum timer frequency on APB1 is 50 MHz and on APB2 is up to 100 MHz, by setting the TIMPRE
bit in the RCC_DCKCFGR register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise
TIMxCLK >= 4x PCLKx.

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6.3.19 Communications interfaces

I2C interface characteristics
The I2C interface meets the requirements of the standard I2C communication protocol with
the following restrictions: the I/O pins SDA and SCL are mapped to are not “true” open-
drain. When configured as open-drain, the PMOS connected between the I/O pin and VDD is
disabled, but is still present.
The I2C characteristics are described in Table 62. Refer also to Section 6.3.16: I/O port
characteristics for more details on the input/output alternate function characteristics (SDA
and SCL).
The I2C bus interface supports standard mode (up to 100 kHz) and fast mode (up to 400
kHz). The I2C bus frequency can be increased up to 1 MHz. For more details about the
complete solution, contact your local ST sales representative.

Table 62. I2C characteristics

Standard mode
Fast mode I2C(1)(2)
I2C(1)(2)
Symbol Parameter Unit
Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 -

µs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
th(SDA) SDA data hold time 0 3450(3) 0 900(4)
tr(SDA) ns
SDA and SCL rise time - 1000 - 300
tr(SCL)
tf(SDA)
SDA and SCL fall time - 300 - 300
tf(SCL)
th(STA) Start condition hold time 4.0 - 0.6 -
Repeated Start condition µs
tsu(STA) 4.7 - 0.6 -
setup time
tsu(STO) Stop condition setup time 4.0 - 0.6 - µs
Stop to Start condition time
tw(STO:STA) 4.7 - 1.3 - µs
(bus free)
Pulse width of the spikes
that are suppressed by the
tSP - - 50 120(5) ns
analog filter for standard fast
mode
Capacitive load for each bus
Cb - 400 - 400 pF
line
1. Guaranteed by design, not tested in production.
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
3. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.

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4. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
5. The minimum width of the spikes filtered by the analog filter is above tSP (max)

Figure 38. I2C bus AC waveforms and measurement circuit

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1. RS = series protection resistor.

2. RP = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.

Table 63. SCL frequency (fPCLK1= 50 MHz, VDD = VDD_I2C = 3.3 V)(1)(2)
I2C_CCR value
fSCL (kHz)
RP = 4.7 kΩ

400 0x8019
300 0x8021
200 0x8032
100 0x0096
50 0x012C
20 0x02EE
2
1. RP = External pull-up resistance, fSCL = I C speed
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed is ±2%. These variations depend on the accuracy of the external
components used to design the application.

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FMPI2C characteristics
The following table presents FMPI2C characteristics.
Refer also to Section 6.3.16: I/O port characteristics for more details on the input/output
function characteristics (SDA and SCL).

Table 64. FMPI2C characteristics(1)

Standard mode Fast mode Fast+ mode
Parameter Unit
Min Max Min Max Min Max

fFMPI2CC FMPI2CCLK frequency 2 - 8 - 18 -

tw(SCLL) SCL clock low time 4.7 - 1.3 - 0.5 -

tw(SCLH) SCL clock high time 4.0 - 0.6 - 0.26 -
tsu(SDA) SDA setup time 0.25 - 0.10 - 0.05 -
tH(SDA) SDA data hold time 0 - 0 - 0 -
tv(SDA,ACK) Data, ACK valid time - 3.45 - 0.9 - 0.45
tr(SDA)
SDA and SCL rise time - 1.0 - 0.30 - 0.12
tr(SCL)

tf(SDA)
SDA and SCL fall time - 0.30 - 0.30 - 0.12 µs
tf(SCL)
th(STA) Start condition hold time 4 - 0.6 - 0.26 -
Repeated Start condition
tsu(STA) 4.7 - 0.6 - 0.26 -
setup time
tsu(STO) Stop condition setup time 4 - 0.6 - 0.26 -

Stop to Start condition time

tw(STO:STA) 4.7 - 1.3 - 0.5 -
(bus free)

Pulse width of the spikes that

are suppressed by the
tSP - - 0.05 0.1 0.05 0.1
analog filter for standard and
fast mode
Capacitive load for each bus
Cb - 400 - 400 - 550(2) pF
Line
1. Based on characterization results, not tested in production.
2. Can be limited. Maximum supported value can be retrieved by referring to the following formulas:
tr(SDA/SCL) = 0.8473 x Rp x Cload
Rp(min) = (VDD -VOL(max)) / IOL(max)

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Figure 39. FMPI2C timing diagram and measurement circuit

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SPI interface characteristics

Unless otherwise specified, the parameters given in Table 65 for the SPI interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 16, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 65. SPI dynamic characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master full duplex/receiver mode,

2.7 V < VDD < 3.6 V - - 50
SPI1/4/5
Master transmitter mode
1.7 V < VDD < 3.6 V - - 50
SPI1/4/5
Master mode
1.7 V < VDD < 3.6 V - - 25
SPI1/2/3/4/5

fSCK Slave transmitter/full duplex mode

SPI clock frequency 2.7 V < VDD < 3.6 V - - 50 MHz
1/tc(SCK)
SPI1//4/5
Slave transmitter/full duplex mode
1.7 V < VDD < 3.6 V - - 35(2)
SPI1/4/5
Slave receiver mode,
1.7 V < VDD < 3.6 V - - 50
SPI1/4/5
Slave mode,
1.7 V < VDD < 3.6 V - - 25
SPI2/3
Duty cycle of SPI clock
Duty(SCK) Slave mode 30 50 70 %
frequency
tw(SCKH) TPCLK
SCK high and low time Master mode, SPI presc = 2 TPCLK−1.5 TPCLK ns
tw(SCKL) +1.5

tsu(NSS) NSS setup time Slave mode, SPI presc = 2 3TPCLK - - ns

th(NSS) NSS hold time Slave mode, SPI presc = 2 2TPCLK - - ns
tsu(MI) Master mode 4.5 - - ns
Data input setup time
tsu(SI) Slave mode 1.5 - - ns
th(MI) Master mode 5 - - ns
Data input hold time
th(SI) Slave mode 0.5 - - ns

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Table 65. SPI dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

ta(SO) Data output access time Slave mode 7 - 21 ns

tdis(SO) Data output disable time Slave mode 5 - 12 ns
Slave mode (after enable edge),
- 7.5 9 ns
2.7 V < VDD < 3.6 V
tv(SO) Data output valid time
Slave mode (after enable edge),
- 7.5 14 ns
1.7 V < VDD < 3.6 V
Slave mode (after enable edge),
th(SO) Data output hold time 5.5 - - ns
1.7 V < VDD < 3.6 V
tv(MO) Data output valid time Master mode (after enable edge) - 3 8 ns
th(MO) Data output hold time Master mode (after enable edge) 2 - - ns
1. Guaranteed by characterization, not tested in production.
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit
into SCK low or high phase preceding the SCK sampling edge. This value can be achieved when the SPI
communicates with a master having tsu(MI) = 0 while Duty(SCK) = 50%

Figure 40. SPI timing diagram - slave mode and CPHA = 0

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Figure 41. SPI timing diagram - slave mode and CPHA = 1(1)

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I2S interface characteristics

Unless otherwise specified, the parameters given in Table 66 for the I2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 16, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CK, SD, WS).

Table 66. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256x8K 256xFs(2) MHz

Master data: 32 bits - 64xFs
fCK I2S clock frequency MHz
Slave data: 32 bits - 64xFs
DCK I2S clock frequency duty cycle Slave receiver 30 70 %
tv(WS) WS valid time Master mode - 5
th(WS) WS hold time Master mode 0 -
tsu(WS) WS setup time Slave mode 2 -
th(WS) WS hold time Slave mode 0.5 -
tsu(SD_MR) Master receiver 0 -
Data input setup time
tsu(SD_SR) Slave receiver 2 - ns
th(SD_MR) Master receiver 0 -
Data input hold time
th(SD_SR) Slave receiver 2.5 -
tv(SD_ST) Slave transmitter (after enable edge) - 15
Data output valid time
tv(SD_MT) Master transmitter (after enable edge) - 2.5
th(SD_ST) Slave transmitter (after enable edge) 6 -
Data output hold time
th(SD_MT) Master transmitter (after enable edge) 0 -

1. Guaranteed by characterization, not tested in production.

2. The maximum value of 256xFs is 50 MHz (APB1 maximum frequency).

Note: Refer to the I2S section of RM0383 reference manual for more details on the sampling
frequency (FS).
fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these
parameters might be slightly impacted by the source clock precision. DCK depends mainly
on the value of ODD bit. The digital contribution leads to a minimum value of
(I2SDIV/(2*I2SDIV+ODD) and a maximum value of (I2SDIV+ODD)/(2*I2SDIV+ODD). FS
maximum value is supported for each mode/condition.

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Figure 43. I2S slave timing diagram (Philips protocol)(1)

tc(CK)

CK Input CPOL = 0

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit
LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14881b

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 44. I2S master timing diagram (Philips protocol)(1)

tf(CK) tr(CK)

tc(CK)

CPOL = 0
CK output

tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14884b

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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QSPI interface characteristics

Unless otherwise specified, the parameters given in the following tables for QSPI are
derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 16, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C=20pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics.

Table 67. QSPI dynamic characteristics in SDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

Write mode
1.71 V≤VDD≤3.6 V - - 80
Cload = 15 pF
fSCK QSPI clock
Read mode MHz
1/tc(SCK) frequency
2.7 V<VDD<3.6 V - - 100
Cload = 15 pF
1.71 V≤VDD≤3.6 V - - 50
tw(CKH) QSPI clock high (T(CK) / 2)-1 - T(CK) / 2
-
tw(CKL) and low T(CK) / 2) - (T(CK) / 2)+1
Data input setup
ts(IN) - 0.5 - -
time
Data input hold ns
th(IN) - 3.5 - -
time
Data output valid
tv(OUT) - - 1 1.5
time
Data output hold
th(OUT) - 0.5 - -
time
1. Guaranteed by characterization results, not tested in production.

Table 68. QSPI dynamic characteristics in DDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

Write mode
1.71 V≤VDD≤3.6 V - - 80
Cload = 15 pF
fSCK QSPI clock
Read mode MHz
1/tc(SCK) frequency
2.7 V<VDD<3.6 V - - 80
Cload = 15 pF
1.71 V≤VDD≤3.6 V - - 50

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Table 68. QSPI dynamic characteristics in DDR mode(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

tw(CKH) QSPI clock high (T(CK) / 2)-1 - T(CK) / 2

-
tw(CKL) and low T(CK) / 2) - (T(CK) / 2)+1
Data input setup
ts(IN) - 0 - -
time
Data input hold
th(IN) - 4 - - ns
time

Data output valid 2.7 V<VDD<3.6 V - 8 10.5

tv(OUT)
time 1.71 V<VDD<3.6 V - 8 13
Data output hold
th(OUT) - 7.5 - -
time
1. Guaranteed by characterization results, not tested in production.

USB OTG full speed (FS) characteristics

This interface is present in USB OTG FS controller.

Table 69. USB OTG FS startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB OTG FS transceiver startup time 1 µs

1. Guaranteed by design, not tested in production.

Table 70. USB OTG FS DC electrical characteristics

Symbol Parameter Conditions Min.(1) Typ. Max.(1) Unit

USB OTG FS operating

VDD 3.0(2) - 3.6 V
voltage
VDI(3) Differential input sensitivity I(USB_FS_DP/DM) 0.2 - -
Input
levels Differential common mode
VCM(3) Includes VDI range 0.8 - 2.5
range V
Single ended receiver
VSE(3) 1.3 - 2.0
threshold

Output VOL Static output level low RL of 1.5 kΩ to 3.6 V(4) - - 0.3
V
levels VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6
PA11, PA12
17 21 24
RPD (USB_FS_DM/DP) VIN = VDD
PA9 (OTG_FS_VBUS) 0.65 1.1 2.0
kΩ
PA11, PA12
VIN = VSS 1.5 1.8 2.1
RPU (USB_FS_DM/DP)
PA9 (OTG_FS_VBUS) VIN = VSS 0.25 0.37 0.55
1. All the voltages are measured from the local ground potential.

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2. The USB OTG FS functionality is ensured down to 2.7 V but not the full USB full speed electrical
characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.
3. Guaranteed by design, not tested in production.
4. RL is the load connected on the USB OTG FS drivers.

Note: When VBUS sensing feature is enabled, PA9 should be left at their default state (floating
input), not as alternate function. A typical 200 µA current consumption of the embedded
sensing block (current to voltage conversion to determine the different sessions) can be
observed on PA9 when the feature is enabled.

Figure 45. USB OTG FS timings: definition of data signal rise and fall time
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Table 71. USB OTG FS electrical characteristics(1)

Driver characteristics

Symbol Parameter Conditions Min Max Unit

tr Rise time(2) CL = 50 pF 4 20 ns
tf Fall time(2) CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage 1.3 2.0 V
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, refer to USB Specification -
Chapter 7 (version 2.0).

CAN (controller area network) interface

Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (CANx_TX and CANx_RX).

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6.3.20 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 72 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 16.

Table 72. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA (1)
Power supply 1.7 - 3.6 V
VDDA −VREF+ < 1.2 V
VREF+ Positive reference voltage 1.7(1) - VDDA V
VDDA = 1.7(1) to 2.4 V 0.6 15 18 MHz
fADC ADC clock frequency
VDDA = 2.4 to 3.6 V 0.6 30 36 MHz
fADC = 30 MHz,
- - 1764 kHz
fTRIG(2) External trigger frequency 12-bit resolution
- - - 17 1/fADC
0 (VSSA or VREF-
VAIN Conversion voltage range(3) - - VREF+ V
tied to ground)
See Equation 1 for
RAIN(2) External input impedance - - 50 kΩ
details
RADC(2)(4) Sampling switch resistance - - - 6 kΩ
Internal sample and hold
CADC(2) - - 4 7 pF
capacitor

Injection trigger conversion fADC = 30 MHz - - 0.100 µs

tlat(2)
latency - - - 3(5) 1/fADC

Regular trigger conversion fADC = 30 MHz - - 0.067 µs

tlatr(2)
latency - - - 2(5) 1/fADC
fADC = 30 MHz 0.100 - 16 µs
tS(2) Sampling time
- 3 - 480 1/fADC
tSTAB(2) Power-up time - - 2 3 µs
fADC = 30 MHz
0.50 - 16.40 µs
12-bit resolution
fADC = 30 MHz
0.43 - 16.34 µs
10-bit resolution
Total conversion time (including fADC = 30 MHz
tCONV(2) 0.37 - 16.27 µs
sampling time) 8-bit resolution
fADC = 30 MHz
0.30 - 16.20 µs
6-bit resolution
9 to 492 (tS for sampling +n-bit resolution for successive
1/fADC
approximation)

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Table 72. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

12-bit resolution
- - 2 Msps
Single ADC

Sampling rate 12-bit resolution

Interleave Dual ADC - - 3.75 Msps
fS(2) (fADC = 30 MHz, and
mode
tS = 3 ADC cycles)
12-bit resolution
Interleave Triple ADC - - 6 Msps
mode
ADC VREF DC current
IVREF+(2) consumption in conversion - - 300 500 µA
mode
ADC VDDA DC current
IVDDA(2) consumption in conversion - - 1.6 1.8 mA
mode
1. VDDA minimum value of 1.7 V is possible with the use of an external power supply supervisor (refer to Section 3.18.2:
Internal reset OFF).
2. Guaranteed by characterization, not tested in production.
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 72.

Equation 1: RAIN max formula

( k – 0.5 )
R AIN - – R ADC
= ---------------------------------------------------------------
N+2
f ADC × C ADC × ln ( 2 )

The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.

Table 73. ADC accuracy at fADC = 18 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±3 ±4

fADC =18 MHz
EO Offset error ±2 ±3
VDDA = 1.7 to 3.6 V
LSB
EG Gain error VREF = 1.7 to 3.6 V ±1 ±3
ED Differential linearity error VDDA −VREF < 1.2 V ±1 ±2
EL Integral linearity error ±2 ±3
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

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Table 74. ADC accuracy at fADC = 30 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±2 ±5

fADC = 30 MHz,
EO Offset error ±1.5 ±2.5
RAIN < 10 kΩ,
EG Gain error VDDA = 2.4 to 3.6 V, ±1.5 ±4 LSB
VREF = 1.7 to 3.6 V,
ED Differential linearity error ±1 ±2
VDDA −VREF < 1.2 V
EL Integral linearity error ±1.5 ±3
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

Table 75. ADC accuracy at fADC = 36 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±4 ±7

fADC =36 MHz,
EO Offset error ±2 ±3
VDDA = 2.4 to 3.6 V,
EG Gain error ±3 ±6 LSB
VREF = 1.7 to 3.6 V
ED Differential linearity error VDDA −VREF < 1.2 V ±2 ±3
EL Integral linearity error ±3 ±6
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed by characterization, not tested in production.

Table 76. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.3 10.4 - bits

fADC =18 MHz
SINAD Signal-to-noise and distortion ratio VDDA = VREF+= 1.7 V 64 64.2 -
SNR Signal-to-noise ratio Input Frequency = 20 kHz 64 65 - dB
Temperature = 25 °C
THD Total harmonic distortion - -72 -67
1. Guaranteed by characterization, not tested in production.

Table 77. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.6 10.8 - bits

fADC = 36 MHz
SINAD Signal-to noise and distortion ratio VDDA = VREF+ = 3.3 V 66 67 -
SNR Signal-to noise ratio Input Frequency = 20 kHz 64 68 - dB
Temperature = 25 °C
THD Total harmonic distortion - -72 -70
1. Guaranteed by characterization, not tested in production.

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Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in
Section 6.3.16 does not affect the ADC accuracy.

Figure 46. ADC accuracy characteristics

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1. See also Table 74.

2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.

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Figure 47. Typical connection diagram using the ADC

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1. Refer to Table 72 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,
fADC should be reduced.

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General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 48 or Figure 49,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed them as close as possible to the chip.

Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA)

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1. VREF+ and VREF- inputs are both available on UFBGA100. VREF+ is also available on LQFP100. When
VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA.

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STM32F412xE/G Electrical characteristics

Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA)

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1. VREF+ and VREF- inputs are both available on UFBGA100. VREF+ is also available on LQFP100. When
VREF+ and VREF- are not available, they are internally connected to VDDA and VSSA.

6.3.21 Temperature sensor characteristics

Table 78. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - ±1 ±2 °C

(1)
Avg_Slope Average slope - 2.5 - mV/°C
V25(1) Voltage at 25 °C - 0.76 - V
tSTART(2) Startup time - 6 10 µs
TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Guaranteed by characterization, not tested in production.
2. Guaranteed by design, not tested in production.

Table 79. Temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

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6.3.22 VBAT monitoring characteristics

Table 80. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - KΩ

Q Ratio on VBAT measurement - 4 -
(1)
Er Error on Q –1 - +1 %
ADC sampling time when reading the VBAT
TS_vbat(2)(2) 5 - - µs
1 mV accuracy
1. Guaranteed by design, not tested in production.
2. Shortest sampling time can be determined in the application by multiple iterations.

6.3.23 Embedded reference voltage

The parameters given in Table 81 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.

Table 81. Embedded internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage - 40 °C < TA < +125 °C 1.18 1.21 1.24 V
ADC sampling time when reading the
TS_vrefint(1) - 10 - - µs
internal reference voltage
Internal reference voltage spread over the
VRERINT_s(2) VDD = 3V ± 10mV - 3 5 mV
temperature range
TCoeff(2) Temperature coefficient - - 30 50 ppm/°C
tSTART(2) Startup time - - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production

Table 82. Internal reference voltage calibration values

Symbol Parameter Memory address

Raw data acquired at temperature of

VREFIN_CAL 0x1FFF 7A2A - 0x1FFF 7A2B
30 °C VDDA = 3.3 V

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6.3.24 DFSDM characteristics

Unless otherwise specified, the parameters given in Table 83 for DFSDM are derived from
tests performed under the ambient temperature, fAPB2 frequency and VDD supply voltage
conditions summarized in Table 16: General operating conditions.
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output alternate
function characteristics (DFSDM_CKINy, DFSDM_DATINy, DFSDM_CKOUT for DFSDM).

Table 83. DFSDM characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fDFSDMCLK DFSDM clock - - - fSYSCLK

fCKIN Input clock 20 MHz
SPI mode (SITP[1:0] = 01) - -
(1/TCKIN) frequency (fDFSDMCLK/4)
Output clock
fCKOUT - - - 20 MHz
frequency
Output clock
DuCyCKOUT frequency - 30 50 75 %
duty cycle
Input clock SPI mode (SITP[1:0] = 01),
twh(CKIN)
high and low External clock mode TCKIN/2-0.5 TCKIN/2 -
twl(CKIN)
time (SPICKSEL[1:0] = 0)
SPI mode (SITP[1:0]=01),
Data input
tsu External clock mode 1 - -
setup time
(SPICKSEL[1:0] = 0)
SPI mode (SITP[1:0]=01), ns
Data input
th External clock mode 1 - -
hold time
(SPICKSEL[1:0] = 0)
Manchester Manchester mode (SITP[1:0]
(CKOUT
data period = 10 or 11), (2 ₓ CKOUTDIV)
TManchester DIV+1) ₓ -
(recovered Internal clock mode ₓ TDFSDMCLK
TDFSDMCLK
clock period) (SPICKSEL[1:0] ≠ 0)
1. Data based on characterization results, not tested in production.

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Figure 16: DFSDM timing diagram

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6.3.25 FSMC characteristics

Unless otherwise specified, the parameters given in Table 84 to Table 91 for the FSMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 15, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitance load C = 30 pF
• Measurement points are done at CMOS levels: 0.5.VDD

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Refer to Section 6.3.16: I/O port characteristics for more details on the input/output
characteristics.

Asynchronous waveforms and timings

Figure 50 through Figure 53 represent asynchronous waveforms and Table 84 through
Table 91 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• AddressSetupTime = 0x1
• AddressHoldTime = 0x1
• DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
• BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.

Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

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1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

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Table 84. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 2THCLK – 1 2 THCLK + 0.5

tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 0 1
tw(NOE) FSMC_NOE low time 2THCLK - 1.5 2THCLK
FSMC_NOE high to FSMC_NE high hold
th(NE_NOE) 0 -
time
tv(A_NE) FSMC_NEx low to FSMC_A valid - 1.5
th(A_NOE) Address hold time after FSMC_NOE high 0 -
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns
th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 -
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK - 1 -
tsu(Data_NOE) Data to FSMC_NOEx high setup time THCLK - 1 -
th(Data_NOE) Data hold time after FSMC_NOE high 0 -
th(Data_NE) Data hold time after FSMC_NEx high 0 -
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 0
tw(NADV) FSMC_NADV low time - THCLK + 0.5
1. CL = 30 pF.
2. Based on characterization, not tested in production.

Table 85. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 7THCLK - 1 7THCLK + 0.5

tw(NOE) FSMC_NWE low time 5THCLK – 1.5 5THCLK

tw(NWAIT) FSMC_NWAIT low time THCLK – 0.5 - ns
FSMC_NWAIT valid before FSMC_NEx
tsu(NWAIT_NE) 5THCLK -1 -
high
FSMC_NEx hold time after FSMC_NWAIT
th(NE_NWAIT) 4THCLK + 1 -
invalid
1. CL = 30 pF.
2. Based on characterization, not tested in production.

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Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

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1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit
tw(NE) FSMC_NE low time 3 THCLK - 1 3 THCLK +0.5
tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK + 0.5 THCLK + 0.5
tw(NWE) FSMC_NWE low time THCLK – 1.5 THCLK+ 1
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 1 -
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0.5
th(A_NWE) Address hold time after FSMC_NWE high THCLK - 0.5 -
ns
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK - 1 -
tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK + 2
th(Data_NWE) Data hold time after FSMC_NWE high THCLK + 0.5 -
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 1
tw(NADV) FSMC_NADV low time - THCLK+ 0.5

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1. CL = 30 pF.
2. Based on characterization, not tested in production.

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR write -

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 8THCLK - 1 8THCLK + 0.5

tw(NWE) FSMC_NWE low time 6THCLK + 0.5 6THCLK + 1

ns
tsu(NWAIT_NE) FSMC_NWAIT valid before FSMC_NEx high 6THCLK + 0.5 -
FSMC_NEx hold time after FSMC_NWAIT
th(NE_NWAIT) 4THCLK + 1 -
invalid
1. CL = 30 pF.
2. Based on characterization, not tested in production.

Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms

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Table 88. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 3THCLK – 1 3THCLK + 0.5

tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 2THCLK 2THCLK + 1
ttw(NOE) FSMC_NOE low time THCLK – 1.5 THCLK
FSMC_NOE high to FSMC_NE high hold
th(NE_NOE) 0 -
time
tv(A_NE) FSMC_NEx low to FSMC_A valid - 0.5
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 0 1
tw(NADV) FSMC_NADV low time THCLK – 0.5 THCLK + 0.5
FSMC_AD(address) valid hold time after ns
th(AD_NADV) 0 -
FSMC_NADV high)
th(A_NOE) Address hold time after FSMC_NOE high THCLK – 0.5 -
th(BL_NOE) FSMC_BL time after FSMC_NOE high 0 -
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5
tsu(Data_NE) Data to FSMC_NEx high setup time THCLK - 2 -
tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK - 2 -
th(Data_NE) Data hold time after FSMC_NEx high 0 -
th(Data_NOE) Data hold time after FSMC_NOE high 0 -
1. CL = 30 pF.
2. Based on characterization, not tested in production.

Table 89. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 8THCLK - 1 8THCLK + 0.5

tw(NOE) FSMC_NWE low time 5THCLK 5THCLK + 0.5

ns
FSMC_NWAIT valid before FSMC_NEx
tsu(NWAIT_NE) 5THCLK - 1 -
high
FSMC_NEx hold time after
th(NE_NWAIT) 4THCLK + 1 -
FSMC_NWAIT invalid
1. CL = 30 pF.
2. Based on characterization, not tested in production.

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Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms

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Table 90. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 4THCLK - 1 4THCLK+0.5

tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK THCLK + 1
tw(NWE) FSMC_NWE low time 2THCLK - 1 2THCLK + 0.5
th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 1.5 -
tv(A_NE) FSMC_NEx low to FSMC_A valid - 2
tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 0 1
tw(NADV) FSMC_NADV low time THCLK – 0.5 THCLK+ 0.5
ns
FSMC_AD(adress) valid hold time after
th(AD_NADV) THCLK -
FSMC_NADV high)
th(A_NWE) Address hold time after FSMC_NWE high THCLK- 1.5 -
th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK -
tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5
tv(Data_NADV) FSMC_NADV high to Data valid - THCLK + 2
th(Data_NWE) Data hold time after FSMC_NWE high THCLK + 0.5 -
1. CL = 30 pF.
2. Based on characterization, not tested in production.

Table 91. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FSMC_NE low time 9THCLK - 1 9THCLK + 0.5

tw(NWE) FSMC_NWE low time 7THCLK - 1 7THCLK + 0.5 ns

tsu(NWAIT_NE) FSMC_NWAIT valid before FSMC_NEx high 6THCLK -1 -
FSMC_NEx hold time after FSMC_NWAIT
th(NE_NWAIT) 4THCLK + 1 -
invalid
1. CL = 30 pF.
2. Based on characterization, not tested in production.

Synchronous waveforms and timings

Figure 54 through Figure 57 represent synchronous waveforms and Table 92 through
Table 95 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
• BurstAccessMode = FSMC_BurstAccessMode_Enable;
• MemoryType = FSMC_MemoryType_CRAM;
• WriteBurst = FSMC_WriteBurst_Enable;
• CLKDivision = 1; (0 is not supported, see the STM32F446 reference manual: RM0390)
• DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

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In all timing tables, the THCLK is the HCLK clock period (with maximum
FSMC_CLK = 90 MHz).

Figure 54. Synchronous multiplexed NOR/PSRAM read timings

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Table 92. Synchronous multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period 2THCLK - 0.5 -

td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1
td(CLKH_NExH) FSMC_CLK high to FSMC_NEx high (x= 0…2) THCLK + 0.5 -
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 1
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 -
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 2
FSMC_CLK high to FSMC_Ax invalid
td(CLKH-AIV) THCLK -
(x=16…25)
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 1.5
ns
td(CLKH-NOEH) FSMC_CLK high to FSMC_NOE high THCLK -
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 2.5
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 -
FSMC_A/D[15:0] valid data before FSMC_CLK
tsu(ADV-CLKH) 1 -
high
FSMC_A/D[15:0] valid data after FSMC_CLK
th(CLKH-ADV) 2 -
high
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 2 -
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 2 -
1. CL = 30 pF.
2. Based on characterization, not tested in production.

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Figure 55. Synchronous multiplexed PSRAM write timings

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Table 93. Synchronous multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period, VDD range= 2.7 to 3.6 V 2THCLK - 0.5 -

td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x= 0...2) - 1
td(CLKH-NExH) FSMC_CLK high to FSMC_NEx high (x= 0…2) THCLK + 0.5 -
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 1
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 -
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 2
td(CLKH-AIV) FSMC_CLK high to FSMC_Ax invalid (x=16…25) THCLK -
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1.5
ns
t(CLKH-NWEH) FSMC_CLK high to FSMC_NWE high THCLK + 0.5 -
td(CLKL-ADV) FSMC_CLK low to FSMC_AD[15:0] valid - 2.5
td(CLKL-ADIV) FSMC_CLK low to FSMC_AD[15:0] invalid 0 -
td(CLKL-DATA) FSMC_A/D[15:0] valid data after FSMC_CLK low - 4
td(CLKL-NBLL) FSMC_CLK low to FSMC_NBL low - 3
td(CLKH-NBLH) FSMC_CLK high to FSMC_NBL high THCLK -
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 2 -
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 2 -
1. CL = 30 pF.
2. Based on characterization, not tested in production.

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Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings

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Table 94. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period 2THCLK – 0.5 -

t(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1
td(CLKH-NExH) FSMC_CLK high to FSMC_NEx high (x= 0…2) THCLK +0.5 -
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 1
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 -
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 2
td(CLKH-AIV) FSMC_CLK high to FSMC_Ax invalid (x=16…25) THCLK -
ns
td(CLKL-NOEL) FSMC_CLK low to FSMC_NOE low - 1.5
td(CLKH-NOEH) FSMC_CLK high to FSMC_NOE high THCLK -
FSMC_D[15:0] valid data before FSMC_CLK
tsu(DV-CLKH) 1 -
high
th(CLKH-DV) FSMC_D[15:0] valid data after FSMC_CLK high 2 -
tsu(NWAIT-CLKH) FSMC_NWAIT valid before FSMC_CLK high 2 -
th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 2 -

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STM32F412xE/G Electrical characteristics

1. CL = 30 pF.
2. Based on characterization, not tested in production.

Figure 57. Synchronous non-multiplexed PSRAM write timings

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Table 95. Synchronous non-multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FSMC_CLK period 2THCLK – 0.5 -

td(CLKL-NExL) FSMC_CLK low to FSMC_NEx low (x=0..2) - 1
td(CLKH-NExH) FSMC_CLK high to FSMC_NEx high (x= 0…2) THCLK + 0.5 -
td(CLKL-NADVL) FSMC_CLK low to FSMC_NADV low - 1
td(CLKL-NADVH) FSMC_CLK low to FSMC_NADV high 0 -
td(CLKL-AV) FSMC_CLK low to FSMC_Ax valid (x=16…25) - 2
td(CLKH-AIV) FSMC_CLK high to FSMC_Ax invalid (x=16…25) THCLK -
td(CLKL-NWEL) FSMC_CLK low to FSMC_NWE low - 1.5 ns

td(CLKH-NWEH) FSMC_CLK high to FSMC_NWE high THCLK + 0.5 -

td(CLKL-Data) FSMC_D[15:0] valid data after FSMC_CLK low - 4
td(CLKL-NBLL) FSMC_CLK low to FSMC_NBL low - 3
td(CLKH-NBLH) FSMC_CLK high to FSMC_NBL high THCLK -
tsu(NWAIT-
FSMC_NWAIT valid before FSMC_CLK high 2 -
CLKH)

th(CLKH-NWAIT) FSMC_NWAIT valid after FSMC_CLK high 2 -

1. CL = 30 pF.
2. Based on characterization, not tested in production.

6.3.26 SD/SDIO MMC/eMMC card host interface (SDIO) characteristics

Unless otherwise specified, the parameters given in Table 96 for the SDIO are derived from
tests performed under the ambient temperature, fPCLK2 frequency and VDD supply voltage
conditions summarized in Table 16, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.16: I/O port characteristics for more details on the input/output
characteristics.

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Figure 58. SDIO high-speed mode

Figure 59. SD default mode

Table 96. Dynamic characteristics: SD / MMC characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fpp =50MHz 9.5 10.5 -
ns
tW(CKH) Clock high time fpp =50MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fpp =50MHz 4 - -

ns
tIH Input hold time HS fpp =50MHz 2.5 - -

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fpp =50MHz - 13 13.5

ns
tOH Output hold time HS fpp =50MHz 11 - -

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Table 96. Dynamic characteristics: SD / MMC characteristics(1)(2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fpp =25MHz 2.5 - -

ns
tIHD Input hold time SD fpp =25MHz 2.5 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fpp =25 MHz - 1.5 2

ns
tOHD Output hold default time SD fpp =25 MHz 0.5 - -

1. Guaranteed by characterization results, not tested in production.

2. VDD = 2.7 to 3.6 V.

Table 97. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V(1)(2)
Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fpp =50MHz 9.5 10.5 -
ns
tW(CKH) Clock high time fpp =50MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS fpp =50MHz 3.5 - -

ns
tIH Input hold time HS fpp =50MHz 4 - -

CMD, D outputs (referenced to CK) in eMMC mode

tOV Output valid time HS fpp =50MHz - 13.5 15

ns
tOH Output hold time HS fpp =50MHz 12 - -
1. Guaranteed by characterization results, not tested in production.
2. CLOAD = 20 pF.

6.3.27 RTC characteristics

Table 98. RTC characteristics

Symbol Parameter Conditions Min Max

Any read/write operation

- fPCLK1/RTCCLK frequency ratio 4 -
from/to an RTC register

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STM32F412xE/G Package information

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

7.1 WLCSP64 package information

Figure 60. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
package outline

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1. Drawing is not to scale.

DocID028087 Rev 7 167/201

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Package information STM32F412xE/G

Table 99. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
package mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A 0.525 0.555 0.585 0.0207 0.0219 0.0230
A1 - 0.170 - - 0.0067 -
A2 - 0.380 - - 0.0150 -
(2)
A3 - 0.025 - - 0.0010 -
b(3) 0.220 0.250 0.280 0.0087 0.0098 0.0110
D 3.588 3.623 3.658 0.1413 0.1426 0.1440
E 3.616 3.651 3.686 0.1424 0.1437 0.1451
e - 0.400 - - 0.0157 -
e1 - 2.800 - - 0.1102 -
e2 - 2.800 - - 0.1102 -
F - 0.4115 - - 0.0162 -
G - 0.4255 - - 0.0168 -
aaa - - 0.100 - - 0.0039
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Back side coating.
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 61. WLCSP64 - 64-pin, 3.658 x 3.686 mm, 0.4 mm pitch wafer level chip scale
recommended footprint

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STM32F412xE/G Package information

Table 100. WLCSP64 recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm
Dpad 0.225 mm
0.290 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm

Device marking for WLCSP64

The following figure gives an example of topside marking and pin 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 62. WLCSP64 marking example (package top view)

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1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

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Package information STM32F412xE/G

7.2 UFQFPN48 package information

Figure 63. UFQFPN48 - 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat
package outline
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1. Drawing is not to scale.

2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and
solder this back-side pad to PCB ground.

Table 101. UFQFPN48 - 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat
package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.500 0.550 0.600 0.0197 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
D2 5.500 5.600 5.700 0.2165 0.2205 0.2244

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STM32F412xE/G Package information

Table 101. UFQFPN48 - 48-lead, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat
package mechanical data (continued)
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

E2 5.500 5.600 5.700 0.2165 0.2205 0.2244

L 0.300 0.400 0.500 0.0118 0.0157 0.0197
T - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
e - 0.500 - - 0.0197 -
ddd - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 64. UFQFPN48 recommended footprint





 

 

 








 

 

 


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1. Dimensions are in millimeters.

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Package information STM32F412xE/G

Device marking for UFQFPN48

The following figure gives an example of topside marking and pin 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 65. UFQFPN48 marking example (package top view)

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1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

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STM32F412xE/G Package information

7.3 LQFP64 package information

Figure 66. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package outline

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:B0(B9

1. Drawing is not to scale.

DocID028087 Rev 7 173/201

196
Package information STM32F412xE/G

Table 102. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat

package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -
E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
Κ 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

174/201 DocID028087 Rev 7

STM32F412xE/G Package information

Figure 67. LQFP64 recommended footprint

 


  






 


 





AIC

1. Dimensions are in millimeters.

DocID028087 Rev 7 175/201

196
Package information STM32F412xE/G

Device marking for LQFP64

The following figure gives an example of topside marking and pin 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 68. LQFP64 marking example (package top view)

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670)

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1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

176/201 DocID028087 Rev 7

STM32F412xE/G Package information

7.4 LQFP100 package information

Figure 69. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline

3%!4).'0,!.%
#

! MM
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1. Drawing is not to scale. Dimensions are in millimeters.

Table 103. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package

mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591

DocID028087 Rev 7 177/201

196
Package information STM32F412xE/G

Table 103. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package

mechanical data (continued)
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

D3 - 12.000 - - 0.4724 -
E 15.800 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 70. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat

recommended footprint
 

 




 

 


 





AIC

1. Dimensions are in millimeters.

178/201 DocID028087 Rev 7

STM32F412xE/G Package information

Device marking for LQFP100

The following figure gives an example of topside marking and pin 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 71. LQFP100 marking example (package top view)

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(6)

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1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

DocID028087 Rev 7 179/201

196
Package information STM32F412xE/G

7.5 LQFP144 package information

Figure 72. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package outline
3%!4).'
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180/201 DocID028087 Rev 7

STM32F412xE/G Package information

Table 104. LQFP144 - 144-pin, 20 x 20 mm low-profile quad flat package

mechanical data
millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.8740
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.6890 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

DocID028087 Rev 7 181/201

196
Package information STM32F412xE/G

Figure 73. LQFP144 - 144-pin,20 x 20 mm low-profile quad flat package

recommended footprint

 

  



 


 

 



DLH

1. Dimensions are expressed in millimeters.

182/201 DocID028087 Rev 7

STM32F412xE/G Package information

Device marking for LQFP144

The following figure gives an example of topside marking and pin 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 74. LQFP144 marking example (package top view)

5HYLVLRQFRGH
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(6)=*7

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LGHQWLILHU

06Y9

1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

DocID028087 Rev 7 183/201

196
Package information STM32F412xE/G

7.6 UFBGA100 package information

Figure 75. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package outline
= 6HDWLQJSODQH

GGG =

$ $ $ $ $
( $EDOO $EDOO ;
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)

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‘ III 0 = $&B0(B9

1. Drawing is not to scale.

Table 105. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
D1 5.450 5.500 5.550 0.2146 0.2165 0.2185
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
E1 5.450 5.500 5.550 0.2146 0.2165 0.2185
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315

184/201 DocID028087 Rev 7

STM32F412xE/G Package information

Table 105. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package mechanical data (continued)
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

ddd - - 0.100 - - 0.0039

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 76. UFBGA100 - 100-pin, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball
grid array package recommended footprint

'SDG
'VP

$&B)3B9

Table 106. UFBGA100 recommended PCB design rules (0.5 mm pitch BGA)
Dimension Recommended values

Pitch 0.5
Dpad 0.280 mm
0.370 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm

DocID028087 Rev 7 185/201

196
Package information STM32F412xE/G

Device marking for UFBGA100

The following figure gives an example of topside marking and ball 1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 77. UFBGA100 marking example (package top view)

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=

06Y9

1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

186/201 DocID028087 Rev 7

STM32F412xE/G Package information

7.7 UFBGA144 package information

Figure 78. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package outline

& 6HDWLQJSODQH

GGG =

$ $ $ $ $
( $EDOO $EDOO $
LGHQWLILHU LQGH[DUHD (
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)

' '

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0

 
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‘ III 0 & $<B0(B9

1. Drawing is not to scale.

Table 107. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package mechanical data
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 - 0.320 - - 0.0126 -
b 0.360 0.400 0.440 0.0142 0.0157 0.0173
D 9.950 10.000 10.050 0.3917 0.3937 0.3957
D1 8.750 8.800 8.850 0.3445 0.3465 0.3484
E 9.950 10.000 10.050 0.3917 0.3937 0.3957
E1 8.750 8.800 8.850 0.3445 0.3465 0.3484
e 0.750 0.800 0.850 0.0295 0.0315 0.0335

DocID028087 Rev 7 187/201

196
Package information STM32F412xE/G

Table 107. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package mechanical data (continued)
millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

F 0.550 0.600 0.650 0.0217 0.0236 0.0256

ddd - - 0.080 - - 0.0031
eee - - 0.150 - - 0.0059
fff - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 79. UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array recommended footprint

'SDG
'VP

ϬϮzͺ&Wͺsϭ

Table 108. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA)
Dimension Recommended values

Pitch 0.80 mm
Dpad 0.400 mm
0.550 mm typ. (depends on the soldermask
Dsm
registration tolerance)

Note: Non solder mask defined (NSMD) pads are recommended.

4 to 6 mils solder paste screen printing process.
Stencil opening is 0.400 mm.
Stencil thickness is between 0.100 mm and 0.125 mm.
Pad trace width is 0.120 mm.

188/201 DocID028087 Rev 7

STM32F412xE/G Package information

Device marking for UFBGA144

The following figure gives an example of topside marking and ball A1 position identifier
location.
Other optional marking or inset/upset marks, which depend on supply chain operations, are
not indicated below.

Figure 80. UFBGA144 marking example (package top view)

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LGHQWLILFDWLRQ
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LQGHQWLILHU

06Y9

1. Parts marked as “ES” or “E” or accompanied by an Engineering Sample notification letter are not yet
qualified and therefore not approved for use in production. ST is not responsible for any consequences
resulting from such use. In no event will ST be liable for the customer using any of these engineering
samples in production. ST’s Quality department must be contacted prior to any decision to use these
engineering samples to run a qualification activity.

DocID028087 Rev 7 189/201

196
Package information STM32F412xE/G

7.8 Thermal characteristics

The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 16: General operating conditions on page 82.
The maximum chip-junction temperature, TJ max., in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in ° C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 109. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

35
LQFP144 - 20 x 20 mm
Thermal resistance junction-ambient
43
LQFP100 - 14 x 14 mm
Thermal resistance junction-ambient
47
LQFP64 - 10 x 10 mm
Thermal resistance junction-ambient
ΘJA 48 °C/W
UFBGA144 - 10 x 10 mm / 0.8 mm pitch
Thermal resistance junction-ambient
57
UFBGA100 - 7 x 7 mm
Thermal resistance junction-ambient
51
WLCSP64 - 3.623 x 3.651 mm
Thermal resistance junction-ambient
32
UFQFPN48 - 7 x 7 mm

7.8.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.

190/201 DocID028087 Rev 7

STM32F412xE/G Part numbering

8 Part numbering

Table 110. Ordering information scheme

Example: STM32 F 412 C E T 6 P TR

Device family
STM32 = Arm®-based 32-bit microcontroller

Product type
F = General-purpose

Device subfamily
412 = 412 line

Pin count
C = 48 pins
R = 64 pins
V = 100 pins
Z = 144 pins

Flash memory size

E = 512 Kbytes of Flash memory
G = 1024 Kbytes of Flash memory

Package
H = UFBGA 7 x 7 mm
J = UFBGA 10 x 10 mm
T = LQFP
U = UFQFPN
Y = WLCSP

Temperature range
6 = Industrial temperature range, -40 to 85 °C
7 = Industrial temperature range, -40 to 105 °C
3 = Industrial temperature range, -40 to 125°C

Option
Blank = Standard production
P = Internal regulator disabled

Packing
TR = tape and reel
No character = tray or tube

DocID028087 Rev 7 191/201

196
Recommendations when using the internal reset OFF STM32F412xE/G

Appendix A Recommendations when using the internal

reset OFF

When the internal reset is OFF, the following integrated features are no longer supported:
• The integrated power-on-reset (POR)/power-down reset (PDR) circuitry is disabled.
• The brownout reset (BOR) circuitry must be disabled. By default BOR is OFF.
• The embedded programmable voltage detector (PVD) is disabled.
• VBAT functionality is no more available and VBAT pin should be connected to VDD.

192/201 DocID028087 Rev 7

STM32F412xE/G Application block diagrams

Appendix B Application block diagrams

B.1 USB OTG full speed (FS) interface solutions

Figure 81. USB controller configured as peripheral-only and used in Full speed mode

9'' 9''86%
9WR9''86%
9ROWDJHUHJXODWRU

670)[[
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86%6WG%FRQQHFWRU
'0
3$
26&B,1 '3
3$

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966

06Y9

1. External voltage regulator only needed when building a VBUS powered device.

Figure 82. USB peripheral-only Full speed mode with direct connection
for VBUS sense

9''!9 9''86%

670)[[
SLQVSDFNDJHV

9%86
86%6WG%FRQQHFWRU

3$
'0
3$
26&B,1 '3
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26&B287
966

06Y9

1. External voltage regulator only needed when building a VBUS powered device.

DocID028087 Rev 7 193/201

196
Application block diagrams STM32F412xE/G

Figure 83. USB peripheral-only Full speed mode, VBUS detection using GPIO

99''9 9''86%

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SLQVSDFNDJHV

*3,2 9%86

86%6WG%FRQQHFWRU
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966

06Y9

1. External voltage regulator only needed when building a VBUS powered device.

Figure 84. USB controller configured as host-only and used in full speed mode

9''

670)[[
(1
*3,2 &XUUHQWOLPLWHU 9
SRZHUVZLWFK 
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3$
26&B287 966

06Y9

1. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.

194/201 DocID028087 Rev 7

STM32F412xE/G Application block diagrams

Figure 85. USB controller configured in dual mode and used in full speed mode

9''
9WR9''
9ROWDJH
UHJXODWRU
9''
670)[[
(1
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06Y9

1. External voltage regulator only needed when building a VBUS powered device.
2. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
3. The ID pin is required in dual role only.

B.2 Sensor Hub application example

Figure 86. Sensor Hub application example

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DocID028087 Rev 7 195/201

196
Application block diagrams STM32F412xE/G

B.3 Display application example

Figure 87. Display application example

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06Y9

Note: 16 bit displays interfaces can be addressed with 100 and 144 pins packages.

196/201 DocID028087 Rev 7

STM32F412xE/G Revision history

Revision history

Table 111. Document revision history

Date Revision Changes

10-Nov-2015 1 Initial release.

Added:
– Table 3: Embedded bootloader interfaces
– Figure 3: Compatible board design for LQFP144 package
– Figure 62: WLCSP64 marking example (package top view)
– Figure 77: UFBGA100 marking example (package top view)
Updated:
– Section 3.17: Power supply schemes
– Section 3.23: Timers and watchdogs
– Section 3.32: Universal serial bus on-the-go full-speed (USB_OTG_FS)
– Figure 1: Compatible board design for LQFP100 package
– Figure 2: Compatible board design for LQFP64 package
– Figure 14: STM32F412xE/G LQFP100 pinout
01-Feb-2016 2
– Figure 16: STM32F412xE/G UFBGA100 pinout
– Figure 17: STM32F412xE/G UFBGA144 pinout
– Figure 20: Input voltage measurement
– Figure 80: UFBGA144 marking example (package top view)
– Table 2: STM32F412xE/G features and peripheral counts
– Table 9: STM32F412xE/G pin definition
– Table 13: Voltage characteristics
– Table 14: Current characteristics
– Table 16: General operating conditions
– Table 37: Peripheral current consumption
– Table 52: EMS characteristics for LQFP144 package
– Table 64: FMPI2C characteristics
Added:
– Figure 82: USB peripheral-only Full speed mode with direct connection for VBUS
sense
– Figure 83: USB peripheral-only Full speed mode, VBUS detection using GPIO
Updated:
– Figure 15: STM32F412xE/G LQFP144 pinout
25-Mar-2016 3 – Section 6.3.6: Supply current characteristics
– Table 9: STM32F412xE/G pin definition
– Table 11: STM32F412xE/G alternate functions
– Table 12: STM32F412xE/G register boundary addresses
– Table 16: General operating conditions
– Table 37: Peripheral current consumption
– Table 97: Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V

DocID028087 Rev 7 197/201

200
Revision history STM32F412xE/G

Table 111. Document revision history

Date Revision Changes

Updated:
– Section 3.23.2: General-purpose timers (TIMx)
– Table 22: Typical and maximum current consumption, code with data processing
(ART accelerator disabled) running from SRAM - VDD = 1.7 V
– Table 23: Typical and maximum current consumption, code with data processing
(ART accelerator disabled) running from SRAM - VDD = 3.6 V
– Table 24: Typical and maximum current consumption in run mode, code with data
processing (ART accelerator enabled except prefetch) running from Flash
memory- VDD = 1.7 V
– Table 25: Typical and maximum current consumption in run mode, code with data
processing (ART accelerator enabled except prefetch) running from Flash
memory - VDD = 3.6 V
27-May-2016 4
– Table 26: Typical and maximum current consumption in run mode, code with data
processing (ART accelerator disabled) running from Flash memory - VDD = 3.6 V
– Table 27: Typical and maximum current consumption in run mode, code with data
processing (ART accelerator disabled) running from Flash memory - VDD = 1.7 V
– Table 28: Typical and maximum current consumption in run mode, code with data
processing (ART accelerator enabled with prefetch) running from Flash memory -
VDD = 3.6 V
– Table 29: Typical and maximum current consumption in Sleep mode - VDD = 3.6 V
– Table 30: Typical and maximum current consumption in Sleep mode - VDD = 1.7 V
– Table 38: Low-power mode wakeup timings(1)
– Figure 38: I2C bus AC waveforms and measurement circuit
– Figure 39: FMPI2C timing diagram and measurement circuit

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STM32F412xE/G Revision history

Table 111. Document revision history

Date Revision Changes

Updated:
– Section 2: Description
– Table 2: STM32F412xE/G features and peripheral counts
– Section 3.19.1: Regulator ON
– Section 3.19.2: Regulator OFF
– Table 4: Regulator ON/OFF and internal power supply supervisor availability
– Table 15: Thermal characteristics
– Table 16: General operating conditions
– Table 21: Embedded reset and power control block characteristics
– Table from: Table 22: Typical and maximum current consumption, code with data
processing (ART accelerator disabled) running from SRAM - VDD = 1.7 V to
Table 35: Typical and maximum current consumptions in VBAT mode
– Figure 24: Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
“low power” mode selection)
– Figure 25: Typical VBAT current consumption (LSE and RTC ON/LSE oscillator
23-May-2017 5 “high drive” mode selection)
– Table 43: HSI oscillator characteristics
– Table 44: LSI oscillator characteristics
– Table 51: Flash memory endurance and data retention
– Table 55: Electrical sensitivities
– Table 57: I/O static characteristics
– Table 88: Asynchronous multiplexed PSRAM/NOR read timings
– Note 1. in Figure 62: WLCSP64 marking example (package top view)
– Note 1. in Figure 65: UFQFPN48 marking example (package top view)
– Note 1. in Figure 68: LQFP64 marking example (package top view)
– Note 1. in Figure 71: LQFP100 marking example (package top view)
– Note 1. in Figure 74: LQFP144 marking example (package top view)
– Note 1. in Figure 77: UFBGA100 marking example (package top view)
– Note 1. in Figure 80: UFBGA144 marking example (package top view)
– Table 110: Ordering information scheme

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Revision history STM32F412xE/G

Table 111. Document revision history

Date Revision Changes

Updated:
– Table 2: STM32F412xE/G features and peripheral counts
– Table 7: USART feature comparison
– Table 9: STM32F412xE/G pin definition
– Section 3.29: Digital filter for sigma-delta modulators (DFSDM)
– Table 107: UFBGA144 - 144-pin, 10 x 10 mm, 0.80 mm pitch, ultra fine pitch ball
grid array package mechanical data
Added:
13-Jul-2017 6 – Section 4.1: WLSCP64 pinout description
– Section 4.2: UFQFPN48 pinout description
– Section 4.3: LQFP64 pinout description
– Section 4.4: LQFP100 pinout description
– Section 4.5: LQFP144 pinout description
– Section 4.6: UFBGA100 pinout description
– Section 4.7: UFBGA144 pinout description
– Section 4.8: Pin definition
– Table 10: FSMC pin definition
Updated:
– Table 23: Typical and maximum current consumption, code with data processing
(ART accelerator disabled) running from SRAM - VDD = 3.6 V
– Table 23: Typical and maximum current consumption, code with data processing
19-Dec-2017 7
(ART accelerator disabled) running from SRAM - VDD = 3.6 V
– Table 32: Typical and maximum current consumption in Stop mode - VDD=3.6 V
– Table 34: Typical and maximum current consumption in Standby mode - VDD=
3.6 V

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