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Diode V-I Characteristic: by Unsa Shakir

This document discusses the V-I characteristics of a PN junction diode under forward and reverse bias conditions. In forward bias, the current increases exponentially with voltage until reaching the knee voltage of around 0.7V for silicon diodes. In reverse bias, a small leakage current flows until the breakdown voltage is exceeded, at which point the reverse current rapidly increases. The complete diode V-I curve shows the forward and reverse bias regions.

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Sharma Anirudh
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189 views10 pages

Diode V-I Characteristic: by Unsa Shakir

This document discusses the V-I characteristics of a PN junction diode under forward and reverse bias conditions. In forward bias, the current increases exponentially with voltage until reaching the knee voltage of around 0.7V for silicon diodes. In reverse bias, a small leakage current flows until the breakdown voltage is exceeded, at which point the reverse current rapidly increases. The complete diode V-I curve shows the forward and reverse bias regions.

Uploaded by

Sharma Anirudh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Diode V-I Characteristic

By Unsa Shakir
PN-Junction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than
the Cathode --- Current flows in the direction of the arrow in the
symbol.
Reverse Bias --- External battery makes the Cathode more positive
than the Anode --- A tiny current flows opposite to the arrow in the
symbol.
Definition of Diode
Current and Voltage
• Forward Bias
▫ When ID > 0mA
and VD > 0V p
(anode)

• Reverse Bias n
▫ When ID < 0mA (cathode)
and VD < 0V
4

Forward Biased
 Forward bias is a condition that allows
current through pn junction.

 A dc voltage (V bais) is applied to bias a


diode.
 Positive side is connected to p-region
(anode) and negative side is connected with
n-region.
As more electrons flow into
 V bais must be greater than ‘barrier the depletion region reducing
potential’ IF (mA) the number of positive ions
and similarly more holes
VF
+ – move in reducing the positive
ions.
IF C
– This reduces the width of
R depletion region.
+ VBIAS
Current limiting
resistance + –
B Knee
A VF
0
0 0.7 V
5

Diode V-I Characteristic


VI Characteristic for forward bias. IF (mA)

 The current in forward biased called forward current C

and is designated If.


 At 0V (Vbias) across the diode, there is no forward current. B Knee
A VF
0
 With gradual increase of Vbias, the forward voltage and 0 0.7 V

forward current increases.


 A resistor in series will limit the forward current in order V
+ F–
to protect the diode from overheating and permanent
damage. –
IF
 A portion of forward-bias voltage drops across the R
limiting resistor. + VBIAS
 Continuing increase of Vf causes rapid increase of + –
forward current but only a gradual increase in voltage
across diode.
6

Reverse Biased
 Reverse bias is a condition that prevents
current through junction.
 Positive side of Vbias is connected to the n-
region whereas the negative side is
connected with p-region.
 Depletion region get wider with this The positive side of bias
configuration. voltage attracts the majority
carriers of n-type creating
more positive ions at the
VBIAS VBR 0 junction.
VR 0
– +
Knee
This widens the depletion
I=0A region.

R
VBIAS
– +
IR
7

Diode V-I Characteristic


 VI Characteristic for reverse bias.

 With 0V reverse voltage there is no reverse


current.
VBR 0
 There is only a small current through the junction VR 0
Knee
as the reverse voltage increases.
 At a point, reverse current shoots up with the
break down of diode. The voltage called break
down voltage. This is not normal mode of
operation.
 After this point the reverse voltage remains at IR

approximately VBR but IR increase very rapidly.


 Break down voltage depends on doping level, set
by manufacturer.
8

Diode V-I Characteristic


 The complete
V-I
characteristic
curve
Knee voltage
• The minimum amount of voltage
required for conducting the diode is
known as “knee voltage” or
“threshold voltage” , “cut-in-voltage".
• The forward voltage at which
the current through PN
junction starts increasing rapidly
is known as knee voltage.
• Knee voltage of “germanium” diode
is-0.3volts
• Knee voltage of “silicon" diode is
-0.7volts
Reverse Breakdown
• As the reverse bias voltage increases, the electric field in
the depletion region increases. Eventually, it can
become large enough to cause the junction to break
down so that a large reverse current flows:

breakdown voltage

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