S

STC8050
0 NPN Silicon Transistor

2W Output Amplifier of Portable Radios in

Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)

1 TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature 65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= 100µA, IE=0 40 V
BVCEO Collector-Emitter Breakdown Voltage IC= 2mA, IB=0 40 V
BVEBO Emitter-Base Breakdown Voltage IE= 100µA, IC=0 6 V
ICBO Collector Cut-off Current VCB= 35V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB= 6V, IC=0 100 nA
hFE1 DC Current Gain VCE= 1V, IC= 5mA 45 170
hFE2 VCE= 1V, IC= 100mA 85 160 300
hFE3 VCE= 1V, IC= 800mA 40 80
VCE (sat) Collector-Emitter Saturation Voltage IC= 800mA, IB= 80mA 0.28 0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC= 800mA, IB= 80mA 0.98 1.2 V
VBE (on) Base-Emitter on Voltage VCE= 1V, IC= 10mA 0.66 1.0 V
Cob Output Capacitance VCB= 10V, IE=0 15 pF
f=1MHz
fT Current Gain Bandwidth Product VCE= 10V, IC= -50mA 100 200 MHz

hFEClassification
Classification A B C
hFE2 85 ~ 160 120 ~ 200 200 ~ 400
Typical Characteristics STC8050

-0.5 1000
VCE = -1V
IB=-4.0mA
IC[mA], COLLECTOR CURRENT

-0.4 IB=-3.5mA

hFE, DC CURRENT GAIN

IB=-3.0mA 100
-0.3 IB=-2.5mA

IB=-2.0mA
-0.2 IB=-1.5mA
10

IB=-1.0mA
-0.1

IB=-0.5mA

1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

-10000 -100
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC=10IB VCE = -1V

IC[mA], COLLECTOR CURRENT

-1000 -10

VBE(sat)

-100 -1

VCE(sat)

-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE

10 100

1 10
-1 -10 -100 -1000 -1 -10 -100 -1000

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product