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Solid State Devices

This document provides details about the course "Solid State Devices" offered as an elective for Electronics Engineering students. The course aims to provide students with a fundamental understanding of how material parameters and device design impact the performance of solid state devices like PN junctions, BJTs, and MOSFETs. The course contents cover topics like carrier transport in semiconductors, PN junctions, BJT operation and characteristics, MOS capacitors, and MOSFETs. Recommended textbooks and references are also listed.

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deepanshu
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110 views1 page

Solid State Devices

This document provides details about the course "Solid State Devices" offered as an elective for Electronics Engineering students. The course aims to provide students with a fundamental understanding of how material parameters and device design impact the performance of solid state devices like PN junctions, BJTs, and MOSFETs. The course contents cover topics like carrier transport in semiconductors, PN junctions, BJT operation and characteristics, MOS capacitors, and MOSFETs. Recommended textbooks and references are also listed.

Uploaded by

deepanshu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Annexure ‘D’

Course Title Course No


Solid State Devices
Specialization Electronics Engineering Structure (IPC) 3 0 3
Offered for EDM / EVD Status Elective
Pre-requisite To take effect from
1. Understand and explain the fundamental principles of modern semiconductor
Objectives devices.
2. Understand and describe the impact of solid-state device capabilities and limitations
on electronic circuit performance.
1. Students develop a fundamental understanding of the impact of material parameters
and device design on the performance of selected solid-state devices.
Course Outcomes
2. Students develop a fundamental understanding of the static and dynamic behavior
of P-N Junction, BJT and Metal Oxide Semiconductor structures.
Basic mechanism in semiconductors - Valence band and Valence band and Energy bank
models of intrinsic semiconductors, Thermal equilibrium, carrier concentration. (8)
Carrier transport – by drift, resistivity, Excess carriers, lifetime, carrier transport by
diffusion, Continuity equation. (8)
p-n junctions – Energy band diagrams, Forward and reverse biasing, Static analysis,
Contents of the
Current Voltage equation, Breakdown processes, Equivalent circuit, Practical p-n
course
diodes; Transient analysis (10)
Bipolar junction transistors – structures, Current gain, Current-Voltage characteristics,
BJT Models, Emitter efficiency, transport factor, transit time, Charge control
description, Transient analysis. (8)
MOS capacitors – CV characteristics, Threshold voltage, Flat-band voltage. (4)
MOSFETs – I-V relationship, Equivalent models. (4)
1. N. DasGupta and A. DasGupta, Semiconductor Devices: Modeling and
Text Book: Technology, Prentice Hall, 2007
2. B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, Prentice Hall
India, 2014
1. M. A. Achuthan and K. N. Bhat, Fundamentals of semiconductor devices, Tata
McGraw Hill, 2006.
2. S. M. Sze, Physics of Semiconductor Devices, John Wiley, 2007.
References
3. D. Neamen, Semiconductors Physics and Devices, Tata Mc Graw Hill, 2003
4. M. S. Tyagi, Introduction to Semiconductor Materials and Devices, John Wiley,
2004
5. R. Pierret, Semiconductor Device Fundamentals, Pearson Education, 2006

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