US1A, US1B, US1D, US1G, US1J, US1K, US1M

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Vishay General Semiconductor
Surface-Mount Ultrafast Rectifier
FEATURES
• Low profile package Available

• Ideal for automated placement

• Glass passivated pallet chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability Available
SMA (DO-214AC)
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Cathode Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
3D 3D please see www.vishay.com/doc?99912
3D Models

TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
PRIMARY CHARACTERISTICS application in switching mode converters and inverters for
IF(AV) 1.0 A consumer, computer, automotive, and telecommunication.
50 V, 100 V, 200 V, 400 V, 600 V,
VRRM
800 V, 1000 V MECHANICAL DATA
IFSM 30 A Case: SMA (DO-214AC)
trr 50 ns, 75 ns Molding compound meets UL 94 V-0 flammability rating
VF at IF 1.0 V, 1.7 V Base P/N-E3 - RoHS-compliant, commercial grade
TJ max. 150 °C Base P/N-M3 - halogen-free, RoHS-compliant, commercial
Package SMA (DO-214AC) grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Circuit configurations Single
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Device marking code UA UB UD UG UJ UK UM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 30 A
superimposed on rated load
Operating and storage temperature range TJ, TSTG -55 to +150 °C

Revision: 08-Apr-2020 1 Document Number: 88768

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
Maximum instantaneous forward voltage 1.0 A VF (1) 1.0 1.7 V
Maximum DC reverse current TA = 25 °C 10
IR μA
at rated DC blocking voltage TA = 100 °C 50
IF = 0.5 A, IR = 1.0 A,
Maximum reverse recovery time trr 50 75 ns
Irr = 0.25 A
Typical junction capacitance 4.0 V, 1 MHz CJ 15 10 pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT
RθJA (1) 75
Maximum thermal resistance °C/W
RθJL (1) 27
Note
(1) PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
US1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
US1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
US1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
US1JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
US1J-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel
US1J-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
US1JHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel
US1JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 08-Apr-2020 2 Document Number: 88768

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Axis Title
1.2 100 10000
Average Forward Rectified Current (A)

TJ = 150 °C
Resistive or Inductive Load

Instantaneous Reverse Current (µA)

1.0 10 TJ = 125 °C

TJ = 100 °C
0.8 1000
1

2nd line
1st line
2nd line
0.6
0.1 TJ = 25 °C
0.4 100

0.2" x 0.2" (5.0 mm x 5.0 mm) 0.01 TJ = -40 °C

0.2 Copper Pad Areas

US1A thru US1G

0 0.001 10
0 25 50 75 100 125 150 0 20 40 60 80 100
Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

Axis Title
30 100 10000
TL = 110 °C TJ = 150 °C
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)

25 8.3 ms Single Half Sine-Wave

TJ = 125 °C
10
20 TJ = 100 °C 1000

2nd line
1st line
2nd line

15 1
TJ = 25 °C

10 100
TJ = -40 °C
0.1
5

US1J thru US1K

0 0.01 10
1 10 100 0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7
Number of Cycles at 60 Hz Instantaneous Forward Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Instantaneous Forward Characteristics

Axis Title Axis Title

100 10000 1000 10000
TJ = 150 °C
Instantaneous Reverse Current (µA)

TJ = 150 °C
Instantaneous Forward Current (A)

100
10 TJ = 125 °C
TJ = 125 °C
1000 10 1000
TJ = 100 °C TJ = 100 °C
2nd line
2nd line
1st line

1st line
2nd line
2nd line

1 TJ = 25 °C 1

TJ = 25 °C
TJ = -40 °C 100 0.1 100
0.1
0.01
TJ = -40 °C
US1A thru US1G US1J thru US1M
0.01 10 0.001 10
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 20 40 60 80 100
Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics

Revision: 08-Apr-2020 3 Document Number: 88768

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor

100 100
TJ = 25 °C

Transient Thermal Impedance (°C/W)

f = 1.0 MHz
US1A thru US1G Vsig = 50 mVp-p
Junction Capacitance (pF)

10

10 US1J thru US1M

1 0.1
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Pulse Duration (s)

Fig. 7 - Typical Junction Capacitance Fig. 8 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMA (DO-214AC)

Cathode Band
Mounting Pad Layout

0.066 (1.68) 0.074 (1.88)

MIN. MAX.
0.065 (1.65) 0.110 (2.79)
0.049 (1.25) 0.100 (2.54)

0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
0.012 (0.305)
MIN.
0.006 (0.152)

0.208 (5.28)
0.090 (2.29) REF.
0.078 (1.98)

0.060 (1.52)
0.030 (0.76) 0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)

Revision: 08-Apr-2020 4 Document Number: 88768

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019 1 Document Number: 91000