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Si924x - Class D Audio Driver With Precision Dead-Time Generator

The document describes using the Si824x device to drive a class D digital audio application. Figure 38 and 39 show the Si824x controlling a half-bridge configuration with a single PWM signal for unipolar supply up to 1500V or bipolar supply up to +/- 750V. The bootstrap circuit formed by D1 and CB allows the high side driver Q1 to operate with a maximum drain voltage of 1500V, while VOB drives the low side Q2. Proper bypass capacitors and fast recovery diode are recommended for the bootstrap.

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Ben M'rad Skander
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146 views1 page

Si924x - Class D Audio Driver With Precision Dead-Time Generator

The document describes using the Si824x device to drive a class D digital audio application. Figure 38 and 39 show the Si824x controlling a half-bridge configuration with a single PWM signal for unipolar supply up to 1500V or bipolar supply up to +/- 750V. The bootstrap circuit formed by D1 and CB allows the high side driver Q1 to operate with a maximum drain voltage of 1500V, while VOB drives the low side Q2. Proper bypass capacitors and fast recovery diode are recommended for the bootstrap.

Uploaded by

Ben M'rad Skander
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Si824x

4. Applications
The following examples illustrate typical circuit configurations using the Si824x.
4.1. Class D Digital Audio Driver
Figures 38 and 39 show the Si8241/4 controlled by a single PWM signal. Supply can be unipolar (0 to 1500 V) or
bipolar (± 750 V).

VDD2 D1
VDDI
C2
VDDI 1 µF

C1
1500 V max
1uF

GNDI VDDA

CB
PWMOUT PWM Q1
VOA

DT GNDA

RDT
CONTROLLER Si8241/4
VDDB
VDDB
C3
10uF
I/O DISABLE
GNDB

Q2
VOB

Figure 38. Si824x in Half-Bridge Audio Application

VDD2 D1
VDDI
C2
VDDI 1 µF

C1
+750 V max
1uF

GNDI VDDA

CB
PWMOUT PWM Q1
VOA

DT GNDA

RDT
CONTROLLER Si8241/4
VDDB
VDDB
C3
10uF
I/O DISABLE
GNDB

Q2
VOB

-750 V max

Figure 39. Si824x in Half-Bridge Audio Application


D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver for Q1, which has
a maximum drain voltage of 1500 V. VOB is connected as a conventional low-side driver. Note that the input side of
the Si824x requires VDD in the range of 4.5 to 5.5 V, while the VDDA and VDDB output side supplies must be
between 6.5 and 24 V with respect to their respective grounds. The boot-strap start up time will depend on the CB
cap chosen. VDD2 is usually the same as VDDB. Also note that the bypass capacitors on the Si824x should be
located as close to the chip as possible. Moreover, it is recommended that 0.1 and 10 µF bypass capacitors be
used to reduce high frequency noise and maximize performance. The D1 diode should be a fast-recovery diode; it
should be able to withstand the maximum high voltage (e.g. 1500 V) and be low-loss. See “AN486: High-Side
Bootstrap Design Using Si823x ISODrivers in Power Delivery Systems” for more details in selecting the bootstrap
cap (CB) and diode (D1).

Rev. 0.2 23

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