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Bipolar Junction Transistor (BJT) : A Breakthrough Device in The Field of Electronics

Okay, let's solve this step-by-step: 1. Given: IE = 1 mA, IC = 0.95 mA 2. Using the expression for collector current: IC = IE - IB 0.95 = 1 - IB IB = 0.05 mA 3. Current gain (α) = IC/IB = 0.95/0.05 = 19 Therefore, the value of α is 19.

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58 views20 pages

Bipolar Junction Transistor (BJT) : A Breakthrough Device in The Field of Electronics

Okay, let's solve this step-by-step: 1. Given: IE = 1 mA, IC = 0.95 mA 2. Using the expression for collector current: IC = IE - IB 0.95 = 1 - IB IB = 0.05 mA 3. Current gain (α) = IC/IB = 0.95/0.05 = 19 Therefore, the value of α is 19.

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© © All Rights Reserved
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Bipolar Junction Transistor (BJT)

A Breakthrough Device in the field of Electronics

Prepared by
Mou Mahmood
Lecturer, Department of CSE
A BJT consists of two pn junctions formed by
sandwiching either p-type or n-type semiconductor
between a pair of opposite type
Some Facts about BJT:

● In a BJT there are two pn junctions. So a


transistor can be regarded as a
combination of two diodes connected
back to back.

● There are three terminals, one taken


from each type of semiconductor.

● The middle section is very thin and the


most important factor in the function of
a transistor
Symbol and practical view of a transistor
Some Facts about BJT:

Emitter: The section at one side which


supplies charge carriers is called emitter.
The emitter is always forward biased
with respect to base so that it can supply
a large number of majority carriers.

Collector: The section on the other side


that collects the charges is called the
collector. The collector is always reverse
biased.
Some Facts about BJT:

Base: The middle section which forms


two junctions with emitter and collector
is called base region.

The base-emitter junction is forward


biased allowing low resistance for the
emitter circuit. The base-collector
junction is reverse biased providing high
resistance in the collector circuit.
Some Facts about BJT:

● In a transistor the base is much


thinner than the emitter and collector
is wider than both.
● The emitter is heavily doped so that it
can inject a large amount of charge
carrier into the base. The base is
lightly doped and very thin, it passes
most of the emitter injected charge
carriers to the collector
Some Facts about BJT:

For both npn and pnp transistors, junction 1


is called Emitter-Base junction and junction 2
is called Collector-Base junction. The voltage
of Emitter-Base junction, VBE=0.7 V as it is
forward biased and made of silicon
(assumed).

The voltage of Collector-Base junction


depends on the reverse bias supply.But this
junction cannot be considered as entirely
open. It is reverse biased but not an open
circuit.
Transistor action- npn Transistor:

The figure shows an npn transistor


with emitter-base junction forward
biased and collector-base junction
reverse biased.

The forward bias causes electrons in


the n-type emitter to flow towards the
base, this constitutes the emitter
current IE
Transistor action- npn Transistor:

As these electrons flow through the


p-type base, they tend to combine
with holes. But the base is lightly
doped and very thin maximum
electrons will cross over the base
region.

The collector region will collect the


electrons and constitutes collector
current IC
Transistor action- npn Transistor:

If some electrons can flow towards


the positive terminal of the battery
connected at emitter-base junction
then it will constitutes a small base
current IB

If the transistor is considered as a


node then the equation of current is:

I E = IB + IC
Transistor action- pnp Transistor:
Transistor Symbols:
Common Base configuration of Transistor:
Common Base configuration of Transistor:

1. Current Amplification factor (⍺): It is the ratio of output current to input current
in a common base connection. In a common base connection the input current is
the emitter current, IE and output current is the collector current, IC.
Common Base configuration of Transistor:

1. Expression for Collector Current: The total


emitter current does not reach the collector
because of a small amount of base current,

●
Common Base configuration of Transistor:

Derivation of the expression of


collector current,
Common Base configuration of Transistor:

Problem 01: In a common base connection = 1mA, IC=0.95 mA. Calculate the
value of

⍺
Common Base configuration of Transistor:

⍺
Common Base configuration of Transistor:

IC and VCB and assume


the transistor is made of silicon.

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