Lecture 5 Basic Electronics Notes
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Amogh VaishnavLecture 5 Basic Electronics Notes
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Amogh VaishnavDiode Operating Conditions
A diode has three operating conditions
No bias wnbas
Forward bias
Reverse bias
Biasing is defined as application of external dc voltage.
Biasing is useful in pn junction diode. It allows diode to work in:
Conducting state
Non-conducting state
Forward Bias ill
The forward voltage causces the depletion region to narrow
The electrons andholes are pushed toward the p-nunction.
The electrons and holes have sufficient energy to cross the p-junction.
Current flow due to majority chargecarriers.
For V Vy, depletion layer diminishes, and large amount ofmajority carriers are available for
conduction. a
Depleticnegi
Forward BiasS
External voltage is applied across the p- junction
in the samne polarity as the p-and n-type materials
(Similar)
Forward Bias
External voltage is applied across the p-n junction
in the same polarity as the p- and n-type materials
(Similar
PN junction diode
under no bias
No externalvoltage is applied p M
No current is flowing: I=0 A
Only a modest depletion repion exists
VD0 v
ID 0 mnA
P
Breakdown
If the reverse voltage V increases above the certain point then the large amount of current
flows due to minority charge carriers. This mechanism is known as breakdown of diode.
Breakdown
Avalanche
Zener Breakdown
Breakdown
Reverse bias
The reverse voltage causes the depletio Tgion
to widen.
MincnityCarier low
The electrons in the n-type material are
attracted toward the positive termminal of the
voltage source. RRROD
The holes in the p-type material ar attracted
toward the negative teminal of the voltage P
source.
The current remains the same with the increase
in the reverse voltage. This curent s know
saturation current.
Reverse Bias
Anode Cathode
P
V
Reverse Bias
Extemal voltage is applied across the p- junction in the opposite polarity of the p-andn-type
materials.
(Opposite)
V-I characteristicsof Diode
V-I characteristics of diode is the plot of the current
through the diodeofv/s voltage across the diode for the
operating range voltages across the diode.
It characterizes the behaviour of the diode during:
Forward Bias operation
Reverse Bias operation
Zener Breakdown
Due to high doping, the small depletion layer exists across the region.
E
This led to the large electricfield due to the relation E- V/w, where w is the width of the
depletion layer.
This large electric field is strongenoughtorupturethe covalent bond.
The generated minority chargecarriersareattracted to eross thedepletion region.
Thiscrossing of minority charge carriers over the depletion region is known as Zener effect.
Zener diode uses the zenereffect for theapplication of voltage regulation.
Zener Breakdown
Anode Cathode
P
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Avalanche Breakdown
The
kinetic energy of the minority charge carriers increascs tremendously with the increase in
reverse voltage. 1
The injected minority chargecarriers
charge carmers gets generated.
collides with the atom Thus, the covalent bond breaks and
These generated charge carricr in turn collides with the another atom, which results into
generation of charge carriers.
This process of collision of atom and generation of charge carriers
repeats.
This process is known as carTier multiplication
As a result. large amount ol charge carriers flows through the diode.
Avalanche brcakdown results into large heat gencration and damages the diode.
Forward characteristics
Current remains constant with the
increase in voltage
It is known as reverse saturation 40-30 20-10
current Is. A
-0.2 uA
Reverse-bias region
Above V>Vbr, the diode breaks due -0.3 uA
to avalanche breakdown DOV.In4,) M
-04uA
Forward characteristics
pma
ForVy.the depletion layer Acual cammerenll
availabie mif
decreases.=smaller I flows.
For V>VY, the cunTent increases
exponentially. Dene pubruy am
diston ot gaph
F
The voltage where the current starts
increasing exponentially is known as Forwdbis rgnt
built-in voltage Vo.
Vo-Vy.
, 1 uA
Forward characteristics DmA
For vVy. the depletion layer (A Acainl omereally
availabe umil
decreases.Smaller I flows.
For V>VY, the current increases
exponentially
Ieire pslarity arnd
irslon ot gaph
F
The voltage wherethe currentstarts
increasingexponentially is known as
0V,
Farward-bis reia
0 mAA
built-in voltage Vo.
Vo V
, Prientice Halt
V-I characteristics of Diode
Step APply positive rangc ofinput voltages at V
Step 2: Measure Nd and
Step 3: Repeat step 1 and 2 for negative range of voltages
Anocle athodel
