LAP 3

TP2 MOSFET

NAI SOKNOV
E20170539

LECTURED BY:
CHHORN SOPHEAKTRA

ENGINEERING’S DEGREE
DEPARTMENT OF ELECTRONIC AND ENERGY ENGINEERING
INSTITUTE OF TECHNOLOGY OF CAMBODIA
PHNOM PENH
2020-2021
 TP2: MOSFET

I. Introduction
The metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor.
MOSFET is like other transistor, it has n-channel and p-channel. Today, MOSFET has
become one the most important device used in the design and construction of integrated
circuit for digital computer. It has three terminals gate, drain, and source. The source and
drain terminals are connected through the metallic contact to n-doped region link by n-
channel. The gate is also connected to metal contact surface but remain insulated from n-
channel by a thin silicon dioxide (𝑆𝑖𝑂2 ).

Figure 1 n-channel MOSFET

II. Objective
 Understand the operation of the MOSFET
 Understand the three region
 Define some important parameter

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III. Experiment procedure

Figure 2 The experiment circuit

1. Case study 1
 By setting the value VDS = 50V, Rload = 100 and RB = 1k. Using DC-sweep
analysis on VBB to identify the cutoff, linear and saturation region of MOSFET.

Figure 3 The analyze circuit

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 Figure 4 the MOSFET characteristic

The figure 4 shows the voltage characteristic drain terminal referred to ground. When
the voltage equal to 50V transistor fully ON, and voltage equal to 0V transistor OFF.

 Define the power dissipation of each component in above circuit

Figure 5 Power dissipation of RB

Figure 6 Power dissipation of RB

In the figure 5 and 6 show that power dissipation of resistor RB is ideally equal to
zero.

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 Figure 7 The power dissipation of resistor Rload

The figure 7 shows the power dissipation of resistor 𝑅𝑙𝑜𝑎𝑑 . The power dissipation
of 𝑅𝑙𝑜𝑎𝑑 become maximum when the MOSFET reach the saturation mode.

Figure 8 the power dissipation of the MOSFET

The figure 8 show the graph of power dissipation of the MOSFET. The power
become maximum in the linear region and remain zero in the cut-off and
saturation mode.

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Answer the question base on the simulation result.

1) Base on the result above with the experiment circuit, the MOSFET activates cut-off in
the voltage range 0 ≤ 𝑉𝐵𝐵 ≤ 3.5𝑉, and it operates saturation mode in the voltage
range 𝑉𝐵𝐵 ≥ 4. The switch-mode requires cut-off and saturation mode. When the
transistor switch-off is the cut-off mode, and switch-on it is fully on or saturation mode.
2) The switch-mode is not likely is used in a linear region, as shown in figure 8 in the
linear mode the power dissipation of the MOSFET reaches a peak around 5.5W. So if
the linear mode is used to operate the switch ton of power will lose. Moreover,
MOSFET becomes hot which can be lead to be broken.
3) The resistor RB is not an important parameter to control MOSFET in this case, because
the signal input is direct current without a frequency.

Figure 9 RB=100 ohm Figure 10 RB=10 ohm

As shown in the figure 9 and 10 when the resistance RB was changed to 100 and 10
ohms, there is no significant difference with characteristic graph with RB=1k ohm.
4) The power rate for each component for this circuit
 Since power dissipation of resistor RB is ideally equal to zero so power rating must
be greater than zero
 For the resistor Rload, its power dissipation reach maximum at 24W so the power
rating must bigger than 24W
 The MOSFET has the maximum power dissipation the active mode, 5.5W then the
power rating must be advance 5.5W.

2. Case study 2

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 Setting the value VDS = 50V, RLoad = 100 and VBB is PWM signal
 The value of RB is varied from 10, 100 and 1K, and study the characteristic
cure of the MOSFET.
The green cure is the MOSFET characteristic and the blue is the input PWM signal
with 500MHz frequency.
 RB=1k ohm

Figure 11 the characteristic cure RB=1k ohms

 RB=100 ohms

Figure 12 the characteristic cure RB=100 ohms

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  RB=10 ohms

Figure 13 characteristic sure RB=10 ohms

Answer the question for case study 2

1) The MOSFET can’t be operate switch mode with RB=1k ohms, but it is possible with
RB equal 100 and 10 ohms.
2) The resistor RB is very important parameter for the case study 2. This case the input is
the PWM signal with a high frequency. As show in the introduction MOSFET is
constructed with the isolated between gate and channel n, so base on the fundamental
capacitor, the internal MOSFET will create a capacitor which can store the energy. So
with resistor RB and internal capacitor, it will create a series RC circuit with the time
constant 𝜏 = 𝑅𝐶. Then if R is increase then the time constant also increase. And another
𝑑𝑣(𝑡) 1
reason is based on the capacitor formula 𝑖(𝑡) = 𝐶 ( ) ⇒ 𝑣(𝑡) = ∫ 𝑖(𝑡)𝑑𝑡. So the
𝑑𝑡 𝐶

current will increase when the resistance is decreased, so the capacitor will be charged
faster. As show in the figure 11 the MOSFET can’t reach saturation mode because the
internal capacitor is not fully charge before it discharges.
3) The value RB effect to the characteristic of the whole circuit, current and voltage of
Rload, the voltage between drain and source terminal.

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IV. Conclusion
MOSFET is a transistor that used voltage to control, it doesn’t not like BJT that is
controlled by the current. There are three regions in the MOSFET cut-off, active, and
saturation region. Only cut-off and saturation mode is used for switch-mode because the
power consumption of the transistor is ideally zero. In case study 1 the gate resistor is not
important, it does not affect the character of the circuit because the input frequency is zero,
but in case study 2 it is the most important parameter to be considered when the input signal
has a high frequency.