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BU941/BU941P BU941PFI: High Voltage Ignition Coil Driver NPN Power Darlington

This document provides specifications for the BU941/BU941P/BUB941PFI high voltage ignition coil driver. It is an NPN power Darlington transistor intended for use in automotive ignition systems. The document lists maximum ratings, thermal characteristics, and electrical specifications for the device, including parameters like current and voltage limits, gain, switching times and safe operating area. It also provides an internal schematic diagram and graph of DC current gain versus collector current.

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90 views2 pages

BU941/BU941P BU941PFI: High Voltage Ignition Coil Driver NPN Power Darlington

This document provides specifications for the BU941/BU941P/BUB941PFI high voltage ignition coil driver. It is an NPN power Darlington transistor intended for use in automotive ignition systems. The document lists maximum ratings, thermal characteristics, and electrical specifications for the device, including parameters like current and voltage limits, gain, switching times and safe operating area. It also provides an internal schematic diagram and graph of DC current gain versus collector current.

Uploaded by

Star Blak
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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'J.s.iis.u ,One.

20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081
U.S.A. BU941/BU941P
BU941PFI
HIGH VOLTAGE IGNITION COIL DRIVER
NPN POWER DARLINGTON

. NPN DARLINGTON
. INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
. VERY RUGGED BIPOLAR TECHNOLOGY
. HIGH OPERATING JUNCTION TO-3
TEMPERATURE
. WIDE RANGE OF PACKAGES

APPLICATIONS
. HIGH RUGGEDNESS ELECTRONIC
IGNITIONS

TO-218 ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

for TO-3
Emitter: pin 2
Base: pinl
Collector: tab

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit


BU941 BU941P BUB941PFI
VCES Collector-Emitter Voltage (VBE = 0) 500 V
VCEO Collector-Emitter Voltage (Is = 0) 400 V
VEBO Emitter-Base Voltage (Ic = 0) 5 V
Ic Collector Current 15 A
ICM Collector Peak Current 30 A
IB Base Current 1 A
IBM Base Peak Current 5 A
Plot Total Dissipation at Tc = 25 °C 180 155 65 W
Tstg Storage Temperature -65 to 200 -65 to 1 75 -65 to 175 °C
Tj Max. Operating Junction Temperature 200 175 175 °C

Qualify Semi-Conductors
BU941 / BU941P/ BUB941PFI

THERMAL DATA

TO-3 TO-218 ISOWATT218


Rthj-case Thermal Resistance Junction-case Max 0.97 0.97 2.3 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit


ICES Collector Cut-off VCE = 500 V 100 uA
Current (VBE = 0) VcE = 5 0 0 V Tj = 125°C 0.5 mA
ICEO Collector Cut-off VCE = 450 V 100 UA
Current (IB = 0) VCE = 450 V TJ = 1 25 °C 0.5 mA
IEBO Emitter Cut-off Current VEB = 5 V 20 mA
(lc = 0)
VcEO(sus)* Collector-Emitter Ic = 100 mA L = 10 mH 400 V
Sustaining Voltage Vciamp = 400 V
(IB = 0) (See FIG.4)
VcE(sat)* Collector-Emitter IC = 8 A IB = 100mA 1.6 V
Saturation Voltage Ic = 10 A IB = 250 mA 1.8 V
lc = 12 A IB = 300 mA 2 V
VBE(sat)* Base-Emitter lc = 8 A IB = 100mA 2.2 V
Saturation Voltage lc = 10 A IB = 250 mA 2.5 V
Ic = 12 A IB = 300 mA 2.7 V
hFE* DC Current Gain lc = 5 A VCE = 1 0 V 300
VF Diode Forward Voltage IF = 10A 2.5 V
Functional Test Vcc = 24 V Vciamp = 400 V 10 A
(see fig. 1) L = 7 mH
INDUCTIVE LOAD Vcc = 1 2 V Vciamp = 3 0 0 V
ts Storage Time VBE = 0 RBE = 47 O 15 us
tf Fall Time L = 7 mH lc = 7 A 0.5 us
(see fig. 3) IB = 70 mA
* Pulsed: Pulse duration = 300 us, duty cycle 1.5 %

Safe Operating Area DC Current Gain

IC(A)

10'

* l-or single non


repeliliva pulse

10" 10

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