Si4948BEY

Vishay Siliconix

Dual P-Channel 60-V (D-S) 175° MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
0.120 at VGS = - 10 V - 3.1
Definition
- 60
0.150 at VGS = - 4.5 V • TrenchFET® Power MOSFET
- 2.8
• Compliant to RoHS Directive 2002/95/EC

S1 S2

SO-8

S1 1 8 D1
G1 G2
G1 2 7 D1

S2 3 6 D2

G2 4 5 D2

Top View
D1 D2
Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free)
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 60
V
Gate-Source Voltage VGS ± 20
TA = 25 °C - 3.1 - 2.4
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 2.6 - 2.0
Pulsed Drain Current (10 µs Pulse Width) IDM - 25 A
a IS -2 - 1.1
Continuous Source Current (Diode Conduction)
Avalanche Current IAS 15
L = 0.1 mH
Single Pulse Avalanche Energy EAS 11 mJ
TA = 25 °C 2.4 1.4
Maximum Power Dissipationa PD W
TA = 70 °C 1.7 0.95
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 53 62.5
Maximum Junction-to-Ambienta RthJA
Steady State 85 110 °C/W
Maximum Junction-to-Foot Steady State RthJF 30 37
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72847 www.vishay.com

S09-1002-Rev. B, 01-Jun-09 1
Si4948BEY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 -3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 60 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 60 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 25 A
VGS = - 10 V, ID = - 3.1 A 0.100 0.120
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 0.2 A 0.126 0.150
Forward Transconductancea gfs VDS = - 15 V, ID = - 3.1 A 8.5 S
a VSD IS = - 2 A, VGS = 0 V - 0.8 - 1.2 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 14.5 22
Gate-Source Charge Qgs VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2.2 nC
Gate-Drain Charge Qgd 3.7
Gate Resistance Rg f = 1 MHz 14 Ω
Turn-On Delay Time td(on) 10 15
Rise Time tr VDD = - 30 V, RL = 30 Ω 15 22
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 50 75 ns
Fall Time tf 35 55
Source-Drain Reverse Recovery Time trr IF = - 2 A, dI/dt = 100 A/µs 30 50
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

25 25
VGS = 10 V thru 5 V

20 20
I D - Drain Current (A)

I D - Drain Current (A)

15 15

4V
10 10

TC = 125 °C
5 5

3V 25 °C
- 55 °C
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 72847

2 S09-1002-Rev. B, 01-Jun-09
 Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.40 1000

0.35
800
RDS(on) - On-Resistance (Ω)

0.30

C - Capacitance (pF)
Ciss
0.25
600

0.20

VGS = 4.5 V 400

0.15 VGS = 10 V

0.10
200
Coss
0.05
Crss
0.00 0
0 5 10 15 20 25 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.2
VDS = 30 V VGS = 10 V
ID = 3.1 A 2.0 ID = 3.1 A
VGS - Gate-to-Source Voltage (V)

8
1.8
RDS(on) - On-Resistance
(Normalized)

1.6
6

1.4

4
1.2

1.0
2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

20 0.40

TJ = 150 °C 0.35
RDS(on) - On-Resistance (Ω)

10 0.30
IS - Source Current (A)

0.25
ID = 3.1 A
0.20

0.15

0.10
TJ = 25 °C
0.05

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72847 www.vishay.com

S09-1002-Rev. B, 01-Jun-09 3
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.6 50

0.4 40
VGS(th) Variance (V)

ID = 250 µA

Power (W)
0.2 30

0.0 20

- 0.2 10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10- 3 10- 2 10- 1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100
IDM Limited

Limited
10 by RDS(on)* P(t) = 0.0001
I D - Drain Current (A)

1 P(t) = 0.001

ID(on) P(t) = 0.01

Limited
P(t) = 0.1
0.1
TA = 25 °C
Single Pulse P(t) = 1
P(t) = 10
BVDSS Limited DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com Document Number: 72847

4 S09-1002-Rev. B, 01-Jun-09
 Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.

Document Number: 72847 www.vishay.com

S09-1002-Rev. B, 01-Jun-09 5
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 08-Feb-17 1 Document Number: 91000