STM32G070CB/KB/RB

Arm® Cortex®-M0+ 32-bit MCU, 128 KB Flash, 36 KB RAM,

4x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
Datasheet - production data

Features
LQFP32 7 × 7 mm
 Core: Arm® 32-bit Cortex®-M0+ CPU, LQFP48 7 × 7 mm
frequency up to 64 MHz LQFP64 10 × 10 mm

 -40°C to 85°C operating temperature

 Memories
– 128 Kbytes of Flash memory with  Communication interfaces
protection – Two I2C-bus interfaces supporting Fast-
mode Plus (1 Mbit/s) with extra current
– 36 Kbytes of SRAM (32 Kbytes with HW
sink, one supporting SMBus/PMBus and
parity check)
wakeup from Stop mode
 CRC calculation unit – Four USARTs with master/slave
 Reset and power management synchronous SPI; two supporting ISO7816
– Voltage range: 2.0 V to 3.6 V interface, LIN, IrDA capability, auto baud
– Power-on/Power-down reset (POR/PDR) rate detection and wakeup feature
– Low-power modes: – Two SPIs (32 Mbit/s) with 4- to 16-bit
Sleep, Stop, Standby programmable bitframe, one multiplexed
– VBAT supply for RTC and backup registers with I2S interface
 Clock management  Development support: serial wire debug (SWD)
– 4 to 48 MHz crystal oscillator  All packages ECOPACK 2 compliant
– 32 kHz crystal oscillator with calibration
– Internal 16 MHz RC with PLL option
– Internal 32 kHz RC oscillator (±5 %)
 Up to 59 fast I/Os
– All mappable on external interrupt vectors
– Multiple 5 V-tolerant I/Os
 7-channel DMA controller with flexible mapping
 12-bit, 0.4 µs ADC (up to 16 ext. channels)
– Up to 16-bit with hardware oversampling
– Conversion range: 0 to 3.6V
 11 timers: 16-bit for advanced motor control,
five 16-bit general-purpose, two basic 16-bit,
two watchdogs, SysTick timer
 Calendar RTC with alarm and periodic wakeup
from Stop/Standby

March 2020 DS12766 Rev 2 1/93

This is information on a product in full production. www.st.com
Contents STM32G070CB/KB/RB

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.1 Arm® Cortex®-M0+ core with MPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.2 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.3 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.4 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.5 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 14
3.7 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.7.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.7.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.7.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.8 Interconnect of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.9 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.10 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.11 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.12 DMA request multiplexer (DMAMUX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.13 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.13.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 20
3.13.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 21
3.14 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.14.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.14.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.15 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.15.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.15.2 General-purpose timers (TIM3, 14, 15, 16, 17) . . . . . . . . . . . . . . . . . . . 23

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STM32G070CB/KB/RB Contents

3.15.3 Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.15.4 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.15.5 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.15.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.16 Real-time clock (RTC), tamper (TAMP) and backup registers . . . . . . . . . 25
3.17 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.18 Universal synchronous/asynchronous receiver transmitter (USART) . . . 26
3.19 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.20 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.20.1 Serial wire debug port (SW-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

4 Pinouts, pin description and alternate functions . . . . . . . . . . . . . . . . . 29

5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 43
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 43
5.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
5.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
5.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
5.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
5.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

DS12766 Rev 2 3/93

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Contents STM32G070CB/KB/RB

5.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

5.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
5.3.15 NRST input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
5.3.16 Analog switch booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
5.3.17 Analog-to-digital converter characteristics . . . . . . . . . . . . . . . . . . . . . . . 67
5.3.18 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.3.19 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.3.20 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
5.3.21 Characteristics of communication interfaces . . . . . . . . . . . . . . . . . . . . . 73

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.1 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.2 LQFP48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
6.3 LQFP32 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
6.4.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90

7 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

4/93 DS12766 Rev 2

STM32G070CB/KB/RB List of tables

List of tables

Table 1. STM32G070CB/KB/RB family device features and peripheral counts . . . . . . . . . . . . . . . . 10

Table 2. Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 13
Table 3. Interconnect of STM32G070CB/KB/RB peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 4. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 5. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 6. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 7. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 8. USART implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 9. SPI/I2S implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 10. Terms and symbols used in Table 11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 11. Pin assignment and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 12. Port A alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 13. Port B alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 14. Port C alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 15. Port D alternate function mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 16. Port F alternate function mapping. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 17. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 18. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 19. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 20. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 21. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 22. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 23. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 24. Current consumption in Run and Low-power run modes
at different die temperatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 25. Current consumption in Sleep and Low-power sleep modes . . . . . . . . . . . . . . . . . . . . . . . 47
Table 26. Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 27. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 28. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 29. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 30. Current consumption of peripherals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 31. Low-power mode wakeup times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Table 32. Regulator mode transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 33. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Table 34. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 35. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 36. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Table 37. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 38. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 39. PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 40. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 41. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Table 42. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 43. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 44. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 45. Electrical sensitivity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 46. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Table 47. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

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List of tables STM32G070CB/KB/RB

Table 48. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Table 49. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table 50. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 51. Analog switch booster characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 52. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Table 53. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 54. ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Table 55. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 56. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 57. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 58. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 59. IWDG min/max timeout period at 32 kHz LSI clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 60. Minimum I2CCLK frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 61. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 62. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 63. I2S characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 64. USART characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 65. LQFP64 package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Table 66. LQFP48 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 67. LQFP32 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 68. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 69. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

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STM32G070CB/KB/RB List of figures

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 2. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 3. STM32G070RxT LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 4. STM32G070CxT LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 5. STM32G070KxT LQFP32 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 6. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 7. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 8. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 9. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 10. VREFINT vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 11. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 12. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 13. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Figure 14. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Figure 15. I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 16. I/O AC characteristics definition(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 17. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 18. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 19. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 20. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Figure 21. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Figure 22. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 23. I2S slave timing diagram (Philips protocol) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Figure 24. I2S master timing diagram (Philips protocol). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Figure 25. LQFP64 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Figure 26. Recommended footprint for LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Figure 27. LQFP64 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Figure 28. LQFP48 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Figure 29. Recommended footprint for LQFP48 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 30. LQFP48 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 31. LQFP32 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 32. Recommended footprint for LQFP32 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 33. LQFP32 package marking example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

DS12766 Rev 2 7/93

7
Introduction STM32G070CB/KB/RB

1 Introduction

This document provides information on STM32G070CB/KB/RB microcontrollers, such as

description, functional overview, pin assignment and definition, electrical characteristics,
packaging, and ordering codes.
Information on memory mapping and control registers is object of reference manual.
Information on Arm®(a) Cortex®-M0+ core is available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

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STM32G070CB/KB/RB Description

2 Description

The STM32G070CB/KB/RB mainstream microcontrollers are based on high-performance

Arm® Cortex®-M0+ 32-bit RISC core operating at up to 64 MHz frequency. Offering a high
level of integration, they are suitable for a wide range of applications in consumer, industrial
and appliance domains and ready for the Internet of Things (IoT) solutions.
The devices incorporate a memory protection unit (MPU), high-speed embedded memories
(128 Kbytes of Flash program memory with read protection, write protection, and 36 Kbytes
of SRAM), DMA and an extensive range of system functions, enhanced I/Os and
peripherals. The devices offer standard communication interfaces (two I2Cs, two SPIs / one
I2S, and four USARTs), one 12-bit ADC (2.5 MSps) with up to 19 channels, a low-power
RTC, an advanced control PWM timer, five general-purpose 16-bit timers, two basic timers,
two watchdog timers, and a SysTick timer.
The devices operate within ambient temperatures from -40 to 85°C. They can operate with
supply voltages from 2.0 V to 3.6 V. Optimized dynamic consumption combined with a
comprehensive set of power-saving modes allows the design of low-power applications.
VBAT direct battery input allows keeping RTC and backup registers powered.
The devices come in packages with 32 to 64 pins.

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Description STM32G070CB/KB/RB

Table 1. STM32G070CB/KB/RB family device features and peripheral counts

Peripheral STM32G070KB STM32G070CB STM32G070RB

Flash memory (Kbyte) 128

SRAM (Kbyte) 32 (with parity) or 36 (without parity)

Advanced control 1 (16-bit)
General-purpose 5 (16-bit)
Timers

Basic 2 (16-bit)
SysTick 1
Watchdog 2
SPI [I2S](1) 2 [1]
interfaces

2C
I 2
Comm.

USART 4

RTC Yes
(2)
RNG No
AES(2) No
Tamper pins 2
GPIOs 29 43 59
Wakeup pins 4 4 5
11 ext. 14 ext. 16 ext.
12-bit ADC channels
+ 2 int. + 3 int. + 3 int.
Max. CPU frequency 64 MHz
Operating voltage 2.0 - 3.6 V
Ambient: -40 to 85 °C
Operating temperature
Junction: -40 to 105 °C
Number of pins 32 48 64
2
1. The numbers in brackets denote the count of SPI interfaces configurable as I S interface.
2. RNG: Random number generator, AES: Advanced Encryption Standard

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STM32G070CB/KB/RB Description

Figure 1. Block diagram

SWCLK POWER
DMAMUX
SWDIO SWD Voltage
as AF
VCORE regulator
DMA
VDDIO1
CPU VDDA VDD/VDDA
CORTEX-M0+ Flash memory VSS/VSSA

Bus matrix
I/F VDD
fmax = 64 MHz 128 KB SUPPLY
SUPERVISION
POR
SRAM Reset POR/PDR
36 KB Parity NRST
NVIC IOPORT Int
T sensor
HSI16
RC 16 MHz
PLLPCLK
PLLRCLK PLL
GPIOs
PA[15:0] Port A LSI XTAL OSC
RC 32 kHz OSC_IN
4-48 MHz OSC_OUT
PB[15:0] Port B
HSE
decoder

IWDG
PC[15:0] Port C CRC
I/F VDD
RCC LSE VBAT
PD[9:0] Port D Reset & clock control Low-voltage
detector
PF4,3,1,0 Port F LSE
AHB

XTAL32 kHz OSC32_IN

System and OSC32_OUT
peripheral
clocks RTC, TAMP RTC_OUT
59 AF EXTI Backup regs RTC_REFIN
RTC_TS
I/F
AHB-to-APB TAMP_IN

VREF+

6 channels
TIM1
16x IN BRK, ETR input as AF
ADC I/F
TIM3 4 ch., ETR as AF
SYSCFG
APB

MOSI/SD
MISO/MCK TIM14 1 channel as AF
SPI1/I2S
SCK/CK TIM6
NSS/WS as AF
TIM15 2 channels as AF
TIM7
MOSI, MISO,
SPI2
APB

SCK, NSS, TIM16 & 17 1 channel as AF

TIMER 16/17
as AF PWRCTRL IR_OUT as AF
SCL, SDA, SMBA, I2C1 RX, TX,CTS, RTS,
SMBUS as AF USART1 &2
USART1/2 CK as AF
WWDG
SCL, SDA as AF I2C2 USART3 &4 RX, TX,CTS, RTS,
USART3/4 CK as AF
DBGMCU

Power domain of analog blocks : VBAT VDD VDDA VDDIO1

MSv42183V1

DS12766 Rev 2 11/93

28
Functional overview STM32G070CB/KB/RB

3 Functional overview

3.1 Arm® Cortex®-M0+ core with MPU

The Cortex-M0+ is an entry-level 32-bit Arm Cortex processor designed for a broad range of
embedded applications. It offers significant benefits to developers, including:
 a simple architecture, easy to learn and program
 ultra-low power, energy-efficient operation
 excellent code density
 deterministic, high-performance interrupt handling
 upward compatibility with Cortex-M processor family
 platform security robustness, with integrated Memory Protection Unit (MPU).
The Cortex-M0+ processor is built on a highly area- and power-optimized 32-bit core, with a
2-stage pipeline Von Neumann architecture. The processor delivers exceptional energy
efficiency through a small but powerful instruction set and extensively optimized design,
providing high-end processing hardware including a single-cycle multiplier.
The Cortex-M0+ processor provides the exceptional performance expected of a modern
32-bit architecture, with a higher code density than other 8-bit and 16-bit microcontrollers.
Owing to embedded Arm core, the STM32G070CB/KB/RB devices are compatible with Arm
tools and software.
The Cortex-M0+ is tightly coupled with a nested vectored interrupt controller (NVIC)
described in Section 3.13.1.

3.2 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

3.3 Embedded Flash memory

STM32G070CB/KB/RB devices feature 128 Kbytes of embedded Flash memory available
for storing code and data.

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STM32G070CB/KB/RB Functional overview

Flexible protections can be configured thanks to option bytes:

 Readout protection (RDP) to protect the whole memory. Three levels are available:
– Level 0: no readout protection
– Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
– Level 2: chip readout protection: debug features (Cortex-M0+ serial wire), boot in
RAM and bootloader selection are disabled. This selection is irreversible.

Table 2. Access status versus readout protection level and execution modes

User execution Debug, boot from RAM or boot

Protection from system memory (loader)
Area
level
Read Write Erase Read Write Erase

User 1 Yes Yes Yes No No No

memory 2 Yes Yes Yes N/A N/A N/A
System 1 Yes No No Yes No No
memory 2 Yes No No N/A N/A N/A
Option 1 Yes Yes Yes Yes Yes Yes
bytes 2 Yes No No N/A N/A N/A
(1) N/A(1)
Backup 1 Yes Yes N/A No No
registers 2 Yes Yes N/A N/A N/A N/A
1. Erased upon RDP change from Level 1 to Level 0.

 Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
 single error detection and correction
 double error detection
 readout of the ECC fail address from the ECC register

3.4 Embedded SRAM

STM32G070CB/KB/RB devices have 32 Kbytes of embedded SRAM with parity. Hardware
parity check allows memory data errors to be detected, which contributes to increasing
functional safety of applications.
When the parity protection is not required because the application is not safety-critical, the
parity memory bits can be used as additional SRAM, to increase its total size to 36 Kbytes.
The memory can be read/write-accessed at CPU clock speed, with 0 wait states.

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Functional overview STM32G070CB/KB/RB

3.5 Boot modes

At startup, the boot pin and boot selector option bit are used to select one of the three boot
options:
 boot from User Flash memory
 boot from System memory
 boot from embedded SRAM
The boot pin is shared with a standard GPIO and can be enabled through the boot selector
option bit. The boot loader is located in System memory. It manages the Flash memory
reprogramming through USART on pins PA9/PA10, PC10/PC11 or PA2/PA3, through I2C-
bus on pins PB6/PB7 or PB10/PB11, or through SPI on pins PA4/PA5/PA6/PA7 or
PB12/PB13/PB14/PB15.

3.6 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link
time and stored at a given memory location.

3.7 Power supply management

3.7.1 Power supply schemes

The STM32G070CB/KB/RB devices require a 2.0 V to 3.6 V operating supply voltage (VDD).
Several different power supplies are provided to specific peripherals:
 VDD = 2.0 to 3.6 V
VDD is the external power supply for the internal regulator and the system analog such
as reset, power management and internal clocks. It is provided externally through
VDD/VDDA pin.
 VDDA = 2.0 V to 3.6 V
VDDA is the analog power supply for the A/D converter. VDDA voltage level is identical to
VDD voltage as it is provided externally through VDD/VDDA pin.
 VDDIO1 = VDD
VDDIO1 is the power supply for the I/Os. VDDIO1 voltage level is identical to VDD voltage
as it is provided externally through VDD/VDDA pin.
 VBAT = 1.55 V to 3.6 V. VBAT is the power supply (through a power switch) for RTC,
TAMP, low-speed external 32.768 kHz oscillator and backup registers when VDD is not
present. VBAT is provided externally through VBAT pin. When this pin is not available
on the package, VBAT bonding pad is internally bonded to the VDD/VDDA pin.
 VREF+ is the analog peripheral input reference voltage. When VDDA < 2 V, VREF+ must
be equal to VDDA. When VDDA ≥ 2 V, VREF+ must be between 2 V and VDDA. It can be
grounded when the analog peripherals using VREF+ are not active.

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STM32G070CB/KB/RB Functional overview

VREF+ is delivered through VREF+ pin. On packages without VREF+ pin, VREF+ is
internally connected with VDD, and the internal voltage reference buffer must be kept
disabled (refer to datasheets for package pinout description).
 VCORE
An embedded linear voltage regulator is used to supply the VCORE internal digital
power. VCORE is the power supply for digital peripherals, SRAM and Flash memory.
The Flash memory is also supplied with VDD.

Figure 2. Power supply overview

VDDA domain
VREF+
VREF+
VDDA A/D converter
VSSA

VDDIO1 domain
VDDIO1
I/O ring

VDD domain

Reset block
Temp. sensor VCORE domain
PLL, HSI
Core
VSS Standby circuitry
VSS/VSSA (Wakeup, IWDG) SRAM
VDD VCORE Digital
VDD/VDDA Voltage
regulator peripherals

Low-voltage Flash memory

detector

RTC domain
BKP registers
VBAT
LSE crystal 32.768 kHz osc
RCC BDCR register
RTC and TAMP

MSv47920V1

3.7.2 Power supply supervisor

The device has an integrated power-on/power-down (POR/PDR) reset active in all power
modes and ensuring proper operation upon power-on and power-down. It maintains the
device in reset when the supply voltage is below VPOR/PDR threshold, without the need for
an external reset circuit.

3.7.3 Voltage regulator

Two embedded linear voltage regulators, main regulator (MR) and low-power regulator
(LPR), supply most of digital circuitry in the device.
The MR is used in Run and Sleep modes. The LPR is used in Low-power run, Low-power
sleep and Stop modes.
In Standby mode, both regulators are powered down and their outputs set in high-
impedance state, such as to bring their current consumption close to zero.

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Functional overview STM32G070CB/KB/RB

3.7.4 Low-power modes

By default, the microcontroller is in Run mode after system or power reset. It is up to the
user to select one of the low-power modes described below:

 Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
 Low-power run mode
This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
 Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the Low-
power run mode.
 Stop 0 and Stop 1 modes
In Stop 0 and Stop 1 modes, the device achieves the lowest power consumption while
retaining the SRAM and register contents. All clocks in the VCORE domain are stopped.
The PLL, as well as the HSI16 RC oscillator and the HSE crystal oscillator are
disabled. The LSE or LSI keep running. The RTC can remain active (Stop mode with
RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode,
so as to get clock for processing the wakeup event. The main regulator remains active
in Stop 0 mode while it is turned off in Stop 1 mode.
 Standby mode
The Standby mode is used to achieve the lowest power consumption, with POR/PDR
always active in this mode. The main regulator is switched off to power down VCORE
domain. The low-power regulator is switched off. The PLL, as well as the HSI16 RC
oscillator and the HSE crystal oscillator are also powered down. The RTC can remain
active (Standby mode with RTC, Standby mode without RTC).
For each I/O, the software can determine whether a pull-up, a pull-down or no resistor
shall be applied to that I/O during Standby mode.
Upon entering Standby mode, register contents are lost except for registers in the RTC
domain and standby circuitry.
The device exits Standby mode upon external reset event (NRST pin), IWDG reset
event, wakeup event (WKUP pin, configurable rising or falling edge) or RTC event
(alarm, periodic wakeup, timestamp, tamper), or when a failure is detected on LSE
(CSS on LSE).

3.7.5 Reset mode

During and upon exiting reset, the schmitt triggers of I/Os are disabled so as to reduce
power consumption. In addition, when the reset source is internal, the built-in pull-up
resistor on NRST pin is deactivated.

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STM32G070CB/KB/RB Functional overview

3.7.6 VBAT operation

The VBAT power domain, consuming very little energy, includes RTC, and LSE oscillator and
backup registers.
In VBAT mode, the RTC domain is supplied from VBAT pin. The power source can be, for
example, an external battery or an external supercapacitor. Two anti-tamper detection pins
are available.
The RTC domain can also be supplied from VDD/VDDA pin.
By means of a built-in switch, an internal voltage supervisor allows automatic switching of
RTC domain powering between VDD and voltage from VBAT pin to ensure that the supply
voltage of the RTC domain (VBAT) remains within valid operating conditions. If both voltages
are valid, the RTC domain is supplied from VDD/VDDA pin.
An internal circuit for charging the battery on VBAT pin can be activated if the VDD voltage is
within a valid range.
Note: External interrupts and RTC alarm/events cannot cause the microcontroller to exit the VBAT
mode, as in that mode the VDD is not within a valid range.

3.8 Interconnect of peripherals

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep and Stop
modes.

Table 3. Interconnect of STM32G070CB/KB/RB peripherals

Low-power sleep
Low-power run

Sleep
Interconnect

Stop
Run

Interconnect source Interconnect action

destination

TIMx Timer synchronization or chaining Y Y -

ADCx Conversion triggers Y Y -
TIMx
DMA Memory-to-memory transfer trigger Y Y -
ADCx TIM1 Timer triggered by analog watchdog Y Y -

RTC TIM16 Timer input channel from RTC events Y Y -

All clocks sources (internal Clock source used as input channel for
TIM14,16,17 Y Y -
and external) RC measurement and trimming
CSS
RAM (parity error) TIM1,15,16,17 Timer break Y Y -
Flash memory (ECC error)

DS12766 Rev 2 17/93

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Functional overview STM32G070CB/KB/RB

Table 3. Interconnect of STM32G070CB/KB/RB peripherals (continued)

Low-power sleep
Low-power run

Sleep
Interconnect

Stop
Run
Interconnect source Interconnect action
destination

CPU (hard fault) TIM1,15,16,17 Timer break Y - -

TIMx External trigger Y Y -
GPIO
ADC Conversion external trigger Y Y -

3.9 Clocks and startup

The clock controller distributes the clocks coming from different oscillators to the core and
the peripherals. It also manages clock gating for low-power modes and ensures clock
robustness. It features:
 Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
 Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
 Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
 System clock source: three different sources can deliver SYSCLK system clock:
– 4-48 MHz high-speed oscillator with external crystal or ceramic resonator (HSE). It
can supply clock to system PLL. The HSE can also be configured in bypass mode
for an external clock.
– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software. It can
supply clock to system PLL.
– System PLL with maximum output frequency of 64 MHz. It can be fed with HSE or
HSI16 clocks.
 Auxiliary clock source: two ultra-low-power clock sources for the real-time clock
(RTC):
– 32.768 kHz low-speed oscillator with external crystal (LSE), supporting four drive
capability modes. The LSE can also be configured in bypass mode for using an
external clock.
– 32 kHz low-speed internal RC oscillator (LSI) with ±5% accuracy, also used to
clock an independent watchdog.
 Peripheral clock sources: several peripherals (I2S, USARTs, I2Cs, ADC) have their
own clock independent of the system clock.
 Clock security system (CSS): in the event of HSE clock failure, the system clock is
automatically switched to HSI16 and, if enabled, a software interrupt is generated. LSE

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STM32G070CB/KB/RB Functional overview

clock failure can also be detected and generate an interrupt. The CCS feature can be
enabled by software.
 Clock output:
– MCO (microcontroller clock output) provides one of the internal clocks for
external use by the application
– LSCO (low speed clock output) provides LSI or LSE in all low-power modes
(except in VBAT operation).
Several prescalers allow the application to configure AHB and APB domain clock
frequencies, 64 MHz at maximum.

3.10 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function (AF). Most of
the GPIO pins are shared with special digital or analog functions.
Through a specific sequence, this special function configuration of I/Os can be locked, such
as to avoid spurious writing to I/O control registers.

3.11 Direct memory access controller (DMA)

The direct memory access (DMA) controller is a bus master and system peripheral with
single-AHB architecture.
With 7 channels, it performs data transfers between memory-mapped peripherals and/or
memories, to offload the CPU.
Each channel is dedicated to managing memory access requests from one or more
peripherals. The unit includes an arbiter for handling the priority between DMA requests.
Main features of the DMA controller:
 Single-AHB master
 Peripheral-to-memory, memory-to-peripheral, memory-to-memory and peripheral-to-
peripheral data transfers
 Access, as source and destination, to on-chip memory-mapped devices such as Flash
memory, SRAM, and AHB and APB peripherals
 All DMA channels independently configurable:
– Each channel is associated either with a DMA request signal coming from a
peripheral, or with a software trigger in memory-to-memory transfers. This
configuration is done by software.
– Priority between the requests is programmable by software (four levels per
channel: very high, high, medium, low) and by hardware in case of equality (such
as request to channel 1 has priority over request to channel 2).
– Transfer size of source and destination are independent (byte, half-word, word),
emulating packing and unpacking. Source and destination addresses must be
aligned on the data size.
– Support of transfers from/to peripherals to/from memory with circular buffer
management

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– Programmable number of data to be transferred: 0 to 216 - 1

 Generation of an interrupt request per channel. Each interrupt request originates from
any of the three DMA events: transfer complete, half transfer, or transfer error.

3.12 DMA request multiplexer (DMAMUX)

The DMAMUX request multiplexer enables routing a DMA request line between the
peripherals and the DMA controller. Each channel selects a unique DMA request line,
unconditionally or synchronously with events from its DMAMUX synchronization inputs.
DMAMUX may also be used as a DMA request generator from programmable events on its
input trigger signals.

3.13 Interrupts and events

The device flexibly manages events causing interrupts of linear program execution, called
exceptions. The Cortex-M0+ processor core, a nested vectored interrupt controller (NVIC)
and an extended interrupt/event controller (EXTI) are the assets contributing to handling the
exceptions. Exceptions include core-internal events such as, for example, a division by zero
and, core-external events such as logical level changes on physical lines. Exceptions result
in interrupting the program flow, executing an interrupt service routine (ISR) then resuming
the original program flow.
The processor context (contents of program pointer and status registers) is stacked upon
program interrupt and unstacked upon program resume, by hardware. This avoids context
stacking and unstacking in the interrupt service routines (ISRs) by software, thus saving
time, code and power. The ability to abandon and restart load-multiple and store-multiple
operations significantly increases the device’s responsiveness in processing exceptions.

3.13.1 Nested vectored interrupt controller (NVIC)

The configurable nested vectored interrupt controller is tightly coupled with the core. It
handles physical line events associated with a non-maskable interrupt (NMI) and maskable
interrupts, and Cortex-M0+ exceptions. It provides flexible priority management.
The tight coupling of the processor core with NVIC significantly reduces the latency between
interrupt events and start of corresponding interrupt service routines (ISRs). The ISR
vectors are listed in a vector table, stored in the NVIC at a base address. The vector
address of an ISR to execute is hardware-built from the vector table base address and the
ISR order number used as offset.
If a higher-priority interrupt event happens while a lower-priority interrupt event occurring
just before is waiting for being served, the later-arriving higher-priority interrupt event is
served first. Another optimization is called tail-chaining. Upon a return from a higher-priority
ISR then start of a pending lower-priority ISR, the unnecessary processor context
unstacking and stacking is skipped. This reduces latency and contributes to power
efficiency.

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Features of the NVIC:

 Low-latency interrupt processing
 4 priority levels
 Handling of a non-maskable interrupt (NMI)
 Handling of 32 maskable interrupt lines
 Handling of 10 Cortex-M0+ exceptions
 Later-arriving higher-priority interrupt processed first
 Tail-chaining
 Interrupt vector retrieval by hardware

3.13.2 Extended interrupt/event controller (EXTI)

The extended interrupt/event controller adds flexibility in handling physical line events and
allows identifying wake-up events at processor wakeup from Stop mode.
The EXTI controller has a number of channels, of which some with rising, falling or rising,
and falling edge detector capability. Any GPIO and a few peripheral signals can be
connected to these channels.
The channels can be independently masked.
The EXTI controller can capture pulses shorter than the internal clock period.
A register in the EXTI controller latches every event even in Stop mode, which allows the
software to identify the origin of the processor's wake-up from Stop mode or, to identify the
GPIO and the edge event having caused an interrupt.

3.14 Analog-to-digital converter (ADC)

A native 12-bit analog-to-digital converter is embedded into STM32G070CB/KB/RB
devices. It can be extended to 16-bit resolution through hardware oversampling. The ADC
has up to 16 external channels and 3 internal channels (temperature sensor, voltage
reference, VBAT monitoring). It performs conversions in single-shot or scan mode. In scan
mode, automatic conversion is performed on a selected group of analog inputs.
The ADC frequency is independent from the CPU frequency, allowing maximum sampling
rate of ~2 MSps even with a low CPU speed. An auto-shutdown function guarantees that
the ADC is powered off except during the active conversion phase.
The ADC can be served by the DMA controller. It can operate in the whole VDD supply
range.
The ADC features a hardware oversampler up to 256 samples, improving the resolution to
16 bits (refer to AN2668).
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all scanned channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
The events generated by the general-purpose timers (TIMx) can be internally connected to
the ADC start triggers, to allow the application to synchronize A/D conversions with timers.

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3.14.1 Temperature sensor

The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to an ADC input to convert the sensor
output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor may
vary from part to part due to process variation, the uncalibrated internal temperature sensor
is suitable only for relative temperature measurements.
To improve the accuracy of the temperature sensor, each part is individually factory-
calibrated by ST. The resulting calibration data are stored in the part’s engineering bytes,
accessible in read-only mode.

Table 4. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at a

TS_CAL1 temperature of 30 °C (± 5 °C), 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.0 V (± 10 mV)

3.14.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for the
ADC. VREFINT is internally connected to an ADC input. The VREFINT voltage is individually
precisely measured for each part by ST during production test and stored in the part’s
engineering bytes. It is accessible in read-only mode.

Table 5. Internal voltage reference calibration values

Calibration value name Description Memory address

Raw data acquired at a

VREFINT temperature of 30 °C (± 5 °C), 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.14.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage
using an internal ADC input. As the VBAT voltage may be higher than VDDA and thus outside
the ADC input range, the VBAT pin is internally connected to a bridge divider by three. As a
consequence, the converted digital value is one third the VBAT voltage.

3.15 Timers and watchdogs

The device includes an advanced-control timer, five general-purpose timers, two basic
timers, two low-power timers, two watchdog timers and a SysTick timer. Table 6 compares
features of the advanced-control, general-purpose and basic timers.

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STM32G070CB/KB/RB Functional overview

Table 6. Timer feature comparison

Maximum DMA Capture/ Comple-
Counter Counter Prescaler
Timer type Timer operating request compare mentary
resolution type factor
frequency generation channels outputs

Advanced- Up, down, Integer from

TIM1 16-bit 64 MHz Yes 4 3
control up/down 1 to 216
Up, down, Integer from
TIM3 16-bit 64 MHz Yes 4 -
up/down 1 to 216
Integer from
TIM14 16-bit Up 64 MHz No 1 -
1 to 216
General- Integer from
TIM15 16-bit Up 64 MHz Yes 2 1
purpose 1 to 216
TIM16 Integer from
16-bit Up 64 MHz Yes 1 1
TIM17 1 to 216
TIM6 Integer from
Basic 16-bit Up 64 MHz Yes - -
TIM7 1 to 216

3.15.1 Advanced-control timer (TIM1)

The advanced-control timer can be seen as a three-phase PWM unit multiplexed on 6
channels. It has complementary PWM outputs with programmable inserted dead-times. It
can also be seen as a complete general-purpose timer. The four independent channels can
be used for:
 input capture
 output compare
 PWM output (edge or center-aligned modes) with full modulation capability (0-100%)
 one-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled, so as to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.15.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.

3.15.2 General-purpose timers (TIM3, 14, 15, 16, 17)

There are five synchronizable general-purpose timers embedded in the device (refer to
Table 6 for comparison). Each general-purpose timer can be used to generate PWM outputs
or act as a simple timebase.
 TIM3
This is a full-featured general-purpose timer with 16-bit auto-reload up/downcounter
and 16-bit prescaler.
It has four independent channels for input capture/output compare, PWM or one-pulse
mode output. It can operate in combination with other general-purpose timers via the
Timer Link feature for synchronization or event chaining. It can generate independent

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Functional overview STM32G070CB/KB/RB

DMA request and support quadrature encoders. Its counter can be frozen in debug
mode.
 TIM14
This timer is based on a 16-bit auto-reload upcounter and a 16-bit prescaler. It has one
channel for input capture/output compare, PWM output or one-pulse mode output. Its
counter can be frozen in debug mode.
 TIM15, TIM16, TIM17
These are general-purpose timers featuring:
– 16-bit auto-reload upcounter and 16-bit prescaler
– 2 channels and 1 complementary channel for TIM15
– 1 channel and 1 complementary channel for TIM16 and TIM17
All channels can be used for input capture/output compare, PWM or one-pulse mode
output. The timers can operate together via the Timer Link feature for synchronization
or event chaining. They can generate independent DMA request. Their counters can
be frozen in debug mode.

3.15.3 Basic timers (TIM6 and TIM7)

These timers can be used as generic 16-bit timebases.

3.15.4 Independent watchdog (IWDG)

The independent watchdog is based on an 8-bit prescaler and 12-bit downcounter with
user-defined refresh window. It is clocked from an independent 32 kHz internal RC (LSI).
Independent of the main clock, it can operate in Stop and Standby modes. It can be used
either as a watchdog to reset the device when a problem occurs, or as a free-running timer
for application timeout management. It is hardware- or software-configurable through the
option bytes. Its counter can be frozen in debug mode.

3.15.5 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked by the
system clock. It has an early-warning interrupt capability. Its counter can be frozen in debug
mode.

3.15.6 SysTick timer

This timer is dedicated to real-time operating systems, but it can also be used as a standard
down counter.
Features of SysTick timer:
 24-bit down counter
 Autoreload capability
 Maskable system interrupt generation when the counter reaches 0
 Programmable clock source

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STM32G070CB/KB/RB Functional overview

3.16 Real-time clock (RTC), tamper (TAMP) and backup registers

The device embeds an RTC and five 32-bit backup registers, located in the RTC domain of
the silicon die.
The ways of powering the RTC domain are described in Section 3.7.6.
The RTC is an independent BCD timer/counter.
Features of the RTC:
 Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format
 Automatic correction for 28, 29 (leap year), 30, and 31 days of the month
 Programmable alarm
 On-the-fly correction from 1 to 32767 RTC clock pulses, usable for synchronization with
a master clock
 Reference clock detection - a more precise second-source clock (50 or 60 Hz) can be
used to improve the calendar precision
 Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy
 Two anti-tamper detection pins with programmable filter
 Timestamp feature to save a calendar snapshot, triggered by an event on the
timestamp pin or a tamper event, or by switching to VBAT mode
 17-bit auto-reload wakeup timer (WUT) for periodic events, with programmable
resolution and period
 Multiple clock sources and references:
– A 32.768 kHz external crystal (LSE)
– An external resonator or oscillator (LSE)
– The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
– The high-speed external clock (HSE) divided by 32
When clocked by LSE, the RTC operates in VBAT mode and in all low-power modes. When
clocked by LSI, the RTC does not operate in VBAT mode, but it does in low-power modes.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wake the device up from the low-power modes.
The backup registers allow keeping 20 bytes of user application data in the event of VDD
failure, if a valid backup supply voltage is provided on VBAT pin. They are not affected by
the system reset, power reset, and upon the device’s wakeup from Standby mode.

3.17 Inter-integrated circuit interface (I2C)

The device embeds two I2C peripherals. Refer to Table 7 for the features.
The I2C-bus interface handles communication between the microcontroller and the serial
I2C-bus. It controls all I2C-bus-specific sequencing, protocol, arbitration and timing.

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Functional overview STM32G070CB/KB/RB

Features of the I2C peripheral:

 I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and extra output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Clock stretching
 SMBus specification rev 3.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK
control
– Command and data acknowledge control
– Address resolution protocol (ARP) support
– Host and Device support
– SMBus alert
– Timeouts and idle condition detection
 PMBus rev 1.3 standard compatibility
 Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent of the PCLK reprogramming
 Wakeup from Stop mode on address match
 Programmable analog and digital noise filters
 1-byte buffer with DMA capability

Table 7. I2C implementation

I2C features(1) I2C1 I2C2

Standard mode (up to 100 kbit/s) X X

Fast mode (up to 400 kbit/s) X X
Fast Mode Plus (up to 1 Mbit/s) with extra output drive I/Os X X
Programmable analog and digital noise filters X X
SMBus/PMBus hardware support X -
Independent clock X -
Wakeup from Stop mode on address match X -
1. X: supported

3.18 Universal synchronous/asynchronous receiver transmitter

(USART)
The device embeds universal synchronous/asynchronous receivers/transmitters (USART1,
USART2, USART3, USART4) that communicate at speeds of up to 8 Mbit/s.
They provide hardware management of the CTS, RTS and RS485 DE signals,
multiprocessor communication mode, master synchronous communication and single-wire

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STM32G070CB/KB/RB Functional overview

half-duplex communication mode. Some can also support SmartCard communication (ISO
7816), IrDA SIR ENDEC, LIN Master/Slave capability and auto baud rate feature, and have
a clock domain independent of the CPU clock, which allows them to wake up the MCU from
Stop mode. The wakeup events from Stop mode are programmable and can be:
 start bit detection
 any received data frame
 a specific programmed data frame
All USART interfaces can be served by the DMA controller.

Table 8. USART implementation

USART1 USART3
USART modes/features(1)
USART2 USART4

Hardware flow control for modem X X

Continuous communication using DMA X X
Multiprocessor communication X X
Synchronous mode X X
Smartcard mode X -
Single-wire half-duplex communication X X
IrDA SIR ENDEC block X -
LIN mode X -
Dual clock domain and wakeup from Stop mode X -
Receiver timeout interrupt X -
Modbus communication X -
Auto baud rate detection X -
Driver Enable X X
1. X: supported

3.19 Serial peripheral interface (SPI)

The device contains two SPIs running at up to 32 Mbits/s in master and slave modes. It
supports half-duplex, full-duplex and simplex communications. A 3-bit prescaler gives eight
master mode frequencies. The frame size is configurable from 4 bits to 16 bits. The SPI
peripherals support NSS pulse mode, TI mode and hardware CRC calculation.
The SPI peripherals can be served by the DMA controller.
The I2S interface mode of the SPI peripheral (if supported, see the following table) supports
four different audio standards can operate as master or slave, in half-duplex communication
mode. It can be configured to transfer 16 and 24 or 32 bits with 16-bit or 32-bit data
resolution and synchronized by a specific signal. Audio sampling frequency from 8 kHz up to
192 kHz can be set by an 8-bit programmable linear prescaler. When operating in master
mode, it can output a clock for an external audio component at 256 times the sampling
frequency.

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Functional overview STM32G070CB/KB/RB

Table 9. SPI/I2S implementation

SPI features(1) SPI1 SPI2

Hardware CRC calculation X X

Rx/Tx FIFO X X
NSS pulse mode X X
I2S mode X -
TI mode X X
1. X = supported.

3.20 Development support

3.20.1 Serial wire debug port (SW-DP)

An Arm SW-DP interface is provided to allow a serial wire debugging tool to be connected to
the MCU.

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STM32G070CB/KB/RB Pinouts, pin description and alternate functions

4 Pinouts, pin description and alternate functions

Figure 3. STM32G070RxT LQFP64 pinout

PC10
Top view

PD6
PD5
PD4
PD3
PD2
PD1
PD0
PC9
PB9
PB8
PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
PC11 1 48 PC8
PC12 2 47 PA15
PC13 3 46 PA14-BOOT0
PC14-OSC32_IN 4 45 PA13
PC15-OSC32_OUT 5 44 PA12 [PA10]
VBAT 6 43 PA11 [PA9]
VREF+ 7 42 PA10
VDD/VDDA 8 41 PD9
VSS/VSSA 9 LQFP64 40 PD8
PF0-OSC_IN 10 39 PC7
PF1-OSC_OUT 11 38 PC6
NRST 12 37 PA9
PC0 13 36 PA8
PC1 14 35 PB15
PC2 15 34 PB14
PC3 16 33 PB13
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PC4
PC5
PB0
PB1
PB2
PB10

PB12
PA0
PA1
PA2
PA3
PA4
PA5
PA6
PA7

PB11 MSv47927V1

Figure 4. STM32G070CxT LQFP48 pinout

Top view
PA15
PD3
PD2
PD1
PD0
PB9
PB8
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37

PC13 1 36 PA14-BOOT0
PC14-OSC32_IN 2 35 PA13
PC15-OSC32_OUT 3 34 PA12 [PA10]
VBAT 4 33 PA11 [PA9]
VREF+ 5 32 PA10
VDD/VDDA 6 31 PC7
VSS/VSSA 7
LQFP48 30 PC6
PF0-OSC_IN 8 29 PA9
PF1-OSC_OUT 9 28 PA8
NRST 10 27 PB15
PA0 11 26 PB14
PA1 12 25 PB13
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2
PB10

PB12
PA2
PA3
PA4
PA5
PA6
PA7

PB11

MSv47928V1

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Pinouts, pin description and alternate functions STM32G070CB/KB/RB

Figure 5. STM32G070KxT LQFP32 pinout

PA14-BOOT0
PA15
Top view

PB8
PB7
PB6
PB5
PB4
PB3
32
31
30
29
28
27
26
25
PB9 1 24 PA13
PC14-OSC32_IN 2 23 PA12 [PA10]
PC15-OSC32_OUT 3 22 PA11 [PA9]
VDD/VDDA 4 21 PA10
VSS/VSSA 5
LQFP32 20 PC6
NRST 6 19 PA9
PA0 7 18 PA8
PA1 8 17 PB2

10

12
13
14
15
16
11
9

PB0
PB1
PA2
PA3
PA4
PA5
PA6
PA7
MSv47929V1

Table 10. Terms and symbols used in Table 11

Column Symbol Definition

Terminal name corresponds to its by-default function at reset, unless otherwise specified in
Pin name
parenthesis under the pin name.
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O

I/O structure RST Bidirectional reset pin with embedded weak pull-up resistor
Options for TT or FT I/Os
_f I/O, Fm+ capable
_a I/O, with analog switch function
_c I/O, with specific electrical characteristics
_d I/O, with specific electrical characteristics

Note Upon reset, all I/Os are set as analog inputs, unless otherwise specified.

Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions

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STM32G070CB/KB/RB Pinouts, pin description and alternate functions

Table 11. Pin assignment and description

Pin Number

I/O structure
Pin name

Pin type
Alternate Additional

Note
LQFP32

LQFP48

LQFP64

(function functions functions

upon reset)

USART3_RX, USART4_RX,
- - 1 PC11 I/O FT - -
TIM1_CH4
- - 2 PC12 I/O FT - TIM14_CH1 -

(1)(2) TAMP_IN1,RTC_TS,
- 1 3 PC13 I/O FT TIM1_BKIN
RTC_OUT1,WKUP2
PC14-
OSC32_IN (1)(2)
- 2 4 I/O FT TIM1_BKIN2 OSC32_IN
(PC14)
PC14-
2 - - OSC32_IN (1)(2)
I/O FT TIM1_BKIN2 OSC32_IN,OSC_IN
(PC14)
PC15-
(1)(2) OSC32_EN, OSC_EN,
3 3 5 OSC32_OUT I/O FT OSC32_OUT
TIM15_BKIN
(PC15)
- 4 6 VBAT S - - - -

- 5 7 VREF+ S - - - -

4 6 8 VDD/VDDA S - - - -

5 7 9 VSS/VSSA S - - - -
PF0-OSC_IN
- 8 10 I/O FT - TIM14_CH1 OSC_IN
(PF0)
PF1-
- 9 11 OSC_OUT I/O FT - OSC_EN, TIM15_CH1N OSC_OUT
(PF1)
6 10 12 NRST I/O FT - - NRST

- - 13 PC0 I/O FT - - -

- - 14 PC1 I/O FT - TIM15_CH1- -

- - 15 PC2 I/O FT - SPI2_MISO, TIM15_CH2 -

- - 16 PC3 I/O FT - SPI2_MOSI -

SPI2_SCK, USART2_CTS, ADC_IN0,

7 11 17 PA0 I/O FT_a -
USART4_TX TAMP_IN2,WKUP1

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Pinouts, pin description and alternate functions STM32G070CB/KB/RB

Table 11. Pin assignment and description (continued)

Pin Number

I/O structure
Pin name

Pin type
Alternate Additional

Note
LQFP32

LQFP48

LQFP64

(function functions functions

upon reset)

SPI1_SCK/I2S1_CK,
USART2_RTS_DE_CK,
8 12 18 PA1 I/O FT_a - ADC_IN1
USART4_RX, TIM15_CH1N,
I2C1_SMBA, EVENTOUT
SPI1_MOSI/I2S1_SD, ADC_IN2,
9 13 19 PA2 I/O FT_a -
USART2_TX, TIM15_CH1 WKUP4,LSCO

SPI2_MISO, USART2_RX,
10 14 20 PA3 I/O FT_a - ADC_IN3
TIM15_CH2, EVENTOUT
SPI1_NSS/I2S1_WS,
- 15 21 PA4 I/O TT_a - SPI2_MOSI, TIM14_CH1, ADC_IN4, RTC_OUT2
EVENTOUT
SPI1_NSS/I2S1_WS, ADC_IN4, TAMP_IN1,
11 - - PA4 I/O TT_a - SPI2_MOSI, TIM14_CH1, RTC_TS,
EVENTOUT RTC_OUT1,WKUP2
SPI1_SCK/I2S1_CK,
12 16 22 PA5 I/O TT_a - ADC_IN5
USART3_TX, EVENTOUT
SPI1_MISO/I2S1_MCK,
13 17 23 PA6 I/O FT_a - TIM3_CH1, TIM1_BKIN, ADC_IN6
USART3_CTS, TIM16_CH1
SPI1_MOSI/I2S1_SD,
14 18 24 PA7 I/O FT_a - TIM3_CH2, TIM1_CH1N, ADC_IN7
TIM14_CH1, TIM17_CH1
- - 25 PC4 I/O FT_a - USART3_TX, USART1_TX ADC_IN17

- - 26 PC5 I/O FT_a - USART3_RX, USART1_RX ADC_IN18, WKUP5

SPI1_NSS/I2S1_WS,
(3)
15 19 27 PB0 I/O FT_a TIM3_CH3, TIM1_CH2N, ADC_IN8
USART3_RX
TIM14_CH1, TIM3_CH4,
TIM1_CH3N,
16 20 28 PB1 I/O FT_a - ADC_IN9
USART3_RTS_DE_CK,
EVENTOUT
SPI2_MISO, USART3_TX,
17 21 29 PB2 I/O FT_a - ADC_IN10
EVENTOUT
USART3_TX, SPI2_SCK,
- 22 30 PB10 I/O FT_fa - ADC_IN11
I2C2_SCL

32/93 DS12766 Rev 2

STM32G070CB/KB/RB Pinouts, pin description and alternate functions

Table 11. Pin assignment and description (continued)

Pin Number

I/O structure
Pin name

Pin type
Alternate Additional

Note
LQFP32

LQFP48

LQFP64

(function functions functions

upon reset)

SPI2_MOSI, USART3_RX,
- 23 31 PB11 I/O FT_fa - ADC_IN15
I2C2_SDA

SPI2_NSS, TIM1_BKIN,
- 24 32 PB12 I/O FT_a - ADC_IN16
TIM15_BKIN, EVENTOUT
SPI2_SCK, TIM1_CH1N,
- 25 33 PB13 I/O FT_f - USART3_CTS, TIM15_CH1N, -
I2C2_SCL, EVENTOUT
SPI2_MISO, TIM1_CH2N,
USART3_RTS_DE_CK,
- 26 34 PB14 I/O FT_f - -
TIM15_CH1, I2C2_SDA,
EVENTOUT
SPI2_MOSI, TIM1_CH3N,
(3)
- 27 35 PB15 I/O FT_c TIM15_CH1N, TIM15_CH2, RTC_REFIN
EVENTOUT

(3) MCO, SPI2_NSS, TIM1_CH1,

18 28 36 PA8 I/O FT_c -
EVENTOUT
MCO, USART1_TX, TIM1_CH2,
(3)
19 29 37 PA9 I/O FT_fd SPI2_MISO, TIM15_BKIN, -
I2C1_SCL, EVENTOUT
(3)
20 30 38 PC6 I/O FT TIM3_CH1 -

- 31 39 PC7 I/O FT - TIM3_CH2 -

USART3_TX,
- - 40 PD8 I/O FT - -
SPI1_SCK/I2S1_CK
USART3_RX,
- - 41 PD9 I/O FT - SPI1_NSS/I2S1_WS, -
TIM1_BKIN2
SPI2_MOSI, USART1_RX,
21 32 42 PA10 I/O FT_fd (3)
TIM1_CH3, TIM17_BKIN, -
I2C1_SDA, EVENTOUT
SPI1_MISO/I2S1_MCK,
PA11 (3)
22 33 43 I/O FT_f USART1_CTS, TIM1_CH4, -
[PA9](4)
TIM1_BKIN2, I2C2_SCL
SPI1_MOSI/I2S1_SD,
PA12 (3) USART1_RTS_DE_CK,
23 34 44 I/O FT_f -
[PA10](4) TIM1_ETR, I2S_CKIN,
I2C2_SDA

DS12766 Rev 2 33/93

35
Pinouts, pin description and alternate functions STM32G070CB/KB/RB

Table 11. Pin assignment and description (continued)

Pin Number

I/O structure
Pin name

Pin type
Alternate Additional

Note
LQFP32

LQFP48

LQFP64

(function functions functions

upon reset)

(5)
24 35 45 PA13 I/O FT SWDIO, IR_OUT, EVENTOUT -

(5) SWCLK, USART2_TX,

25 36 46 PA14-BOOT0 I/O FT BOOT0
EVENTOUT
SPI1_NSS/I2S1_WS,
USART2_RX,
26 37 47 PA15 I/O FT - USART4_RTS_DE_CK, -
USART3_RTS_DE_CK,
EVENTOUT
- - 48 PC8 I/O FT - TIM3_CH3, TIM1_CH1 -
I2S_CKIN, TIM3_CH4,
- - 49 PC9 I/O FT - -
TIM1_CH2

(3) EVENTOUT, SPI2_NSS,

- 38 50 PD0 I/O FT_c -
TIM16_CH1

(3) EVENTOUT, SPI2_SCK,

- 39 51 PD1 I/O FT_d -
TIM17_CH1

(3) USART3_RTS_DE_CK,
- 40 52 PD2 I/O FT_c -
TIM3_ETR, TIM1_CH1N

(3) USART2_CTS, SPI2_MISO,

- 41 53 PD3 I/O FT_d -
TIM1_CH2N
USART2_RTS_DE_CK,
- - 54 PD4 I/O FT - -
SPI2_MOSI, TIM1_CH3N
USART2_TX,
- - 55 PD5 I/O FT - SPI1_MISO/I2S1_MCK, -
TIM1_BKIN
USART2_RX,
- - 56 PD6 I/O FT - -
SPI1_MOSI/I2S1_SD
SPI1_SCK/I2S1_CK, TIM1_CH2,
27 42 57 PB3 I/O FT_a - USART1_RTS_DE_CK, -
EVENTOUT
SPI1_MISO/I2S1_MCK,
28 43 58 PB4 I/O FT_a - TIM3_CH1, USART1_CTS, -
TIM17_BKIN, EVENTOUT
SPI1_MOSI/I2S1_SD,
29 44 59 PB5 I/O FT - TIM3_CH2, TIM16_BKIN, WKUP6
I2C1_SMBA

34/93 DS12766 Rev 2

STM32G070CB/KB/RB Pinouts, pin description and alternate functions

Table 11. Pin assignment and description (continued)

Pin Number

I/O structure
Pin name

Pin type
Alternate Additional

Note
LQFP32

LQFP48

LQFP64

(function functions functions

upon reset)

USART1_TX, TIM1_CH3,
30 45 60 PB6 I/O FT_fa - TIM16_CH1N, SPI2_MISO, -
I2C1_SCL, EVENTOUT
USART1_RX, SPI2_MOSI,
31 46 61 PB7 I/O FT_fa - TIM17_CH1N, USART4_CTS, -
I2C1_SDA, EVENTOUT
SPI2_SCK, TIM16_CH1,
32 47 62 PB8 I/O FT_f - USART3_TX, TIM15_BKIN, -
I2C1_SCL, EVENTOUT
IR_OUT, TIM17_CH1,
1 48 63 PB9 I/O FT_f - USART3_RX, SPI2_NSS, -
I2C1_SDA, EVENTOUT
USART3_TX, USART4_TX,
- - 64 PC10 I/O FT - -
TIM1_CH3
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of
current (3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (for example to drive a LED).
2. After an RTC domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the
content of the RTC registers as they are not reset by the system reset. For details on how to manage these GPIOs,
refer to the RTC domain and RTC register descriptions in the RM0444 reference manual.
3. Upon reset, a pull-down resistor might be present on PA8, PD0, or PD2, depending on the voltage level on PB0,
PA9, PC6, PA10, PD1, and PD3. In order to disable this resistor, strobe the UCPDx_STROBE bit of the
SYSCFG_CFGR1 register during start-up sequence.
4. Pins PA9/PA10 can be remapped in place of pins PA11/PA12 (default mapping), using SYSCFG_CFGR1 register.
5. Upon reset, these pins are configured as SW debug alternate functions, and the internal pull-up on PA13 pin and the
internal pull-down on PA14 pin are activated.

DS12766 Rev 2 35/93

35
 Table 12. Port A alternate function mapping
36/93 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PA0 SPI2_SCK USART2_CTS - - USART4_TX - - -

SPI1_SCK/ USART2_RTS
PA1 - - USART4_RX TIM15_CH1N I2C1_SMBA EVENTOUT
I2S1_CK _DE_CK
SPI1_MOSI/
PA2 USART2_TX - - - TIM15_CH1 - -
I2S1_SD
PA3 SPI2_MISO USART2_RX - - - TIM15_CH2 - EVENTOUT
SPI1_NSS/
PA4 SPI2_MOSI - - TIM14_CH1 - - EVENTOUT
I2S1_WS
SPI1_SCK/
PA5 - - - USART3_TX - - EVENTOUT
I2S1_CK
SPI1_MISO/
PA6 TIM3_CH1 TIM1_BKIN - USART3_CTS TIM16_CH1 - -
I2S1_MCK
DS12766 Rev 2

SPI1_MOSI/
PA7 TIM3_CH2 TIM1_CH1N TIM14_CH1 TIM17_CH1 - -
I2S1_SD -
PA8 MCO SPI2_NSS TIM1_CH1 - - - - EVENTOUT
PA9 MCO USART1_TX TIM1_CH2 - SPI2_MISO TIM15_BKIN I2C1_SCL EVENTOUT
PA10 SPI2_MOSI USART1_RX TIM1_CH3 - - TIM17_BKIN I2C1_SDA EVENTOUT
SPI1_MISO/
PA11 USART1_CTS TIM1_CH4 - - TIM1_BKIN2 I2C2_SCL -
I2S1_MCK
SPI1_MOSI/ USART1_RTS
PA12 TIM1_ETR - - I2S_CKIN I2C2_SDA -
I2S1_SD _DE_CK
PA13 SWDIO IR_OUT - - - - - EVENTOUT
PA14 SWCLK USART2_TX - - - - - EVENTOUT

STM32G070CB/KB/RB
SPI1_NSS/ USART4_RTS USART3_RTS
PA15 USART2_RX - - - EVENTOUT
I2S1_WS _DE_CK _DE_CK
 Table 13. Port B alternate function mapping

STM32G070CB/KB/RB
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SPI1_NSS/
PB0 TIM3_CH3 TIM1_CH2N - USART3_RX - - -
I2S1_WS
USART3_RTS
PB1 TIM14_CH1 TIM3_CH4 TIM1_CH3N - - - EVENTOUT
_DE_CK
PB2 - SPI2_MISO - - USART3_TX - - EVENTOUT
SPI1_SCK/ USART1_RTS
PB3 TIM1_CH2 - - - - EVENTOUT
I2S1_CK _DE_CK
SPI1_MISO/
PB4 TIM3_CH1 - - USART1_CTS TIM17_BKIN - EVENTOUT
I2S1_MCK
SPI1_MOSI/
PB5 TIM3_CH2 TIM16_BKIN - - - I2C1_SMBA -
I2S1_SD
PB6 USART1_TX TIM1_CH3 TIM16_CH1N - SPI2_MISO - I2C1_SCL EVENTOUT
DS12766 Rev 2

PB7 USART1_RX SPI2_MOSI TIM17_CH1N - USART4_CTS - I2C1_SDA EVENTOUT

PB8 - SPI2_SCK TIM16_CH1 - USART3_TX TIM15_BKIN I2C1_SCL EVENTOUT
PB9 IR_OUT - TIM17_CH1 - USART3_RX SPI2_NSS I2C1_SDA EVENTOUT
PB10 - - - - USART3_TX SPI2_SCK I2C2_SCL -
PB11 SPI2_MOSI - - - USART3_RX - I2C2_SDA -
PB12 SPI2_NSS - TIM1_BKIN - - TIM15_BKIN - EVENTOUT
PB13 SPI2_SCK - TIM1_CH1N - USART3_CTS TIM15_CH1N I2C2_SCL EVENTOUT
USART3_RTS
PB14 SPI2_MISO - TIM1_CH2N - TIM15_CH1 I2C2_SDA EVENTOUT
_DE_CK
PB15 SPI2_MOSI - TIM1_CH3N - TIM15_CH1N TIM15_CH2 - EVENTOUT
37/93
 Table 14. Port C alternate function mapping
38/93 Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PC0 - - - - - - - -
PC1 - - TIM15_CH1 - - - - -
PC2 - SPI2_MISO TIM15_CH2 - - - - -
PC3 - SPI2_MOSI - - - - - -
PC4 USART3_TX USART1_TX - - - - - -
PC5 USART3_RX USART1_RX - - - - - -
PC6 - TIM3_CH1 - - - - - -
PC7 - TIM3_CH2 - - - - - -
PC8 - TIM3_CH3 TIM1_CH1 - - - - -
PC9 I2S_CKIN TIM3_CH4 TIM1_CH2 - - - - -
DS12766 Rev 2

PC10 USART3_TX USART4_TX TIM1_CH3 - - - - -

PC11 USART3_RX USART4_RX TIM1_CH4 - - - - -
PC12 - - TIM14_CH1 - - - - -
PC13 - - TIM1_BKIN - - - - -
PC14 - - TIM1_BKIN2 - - - - -
PC15 OSC32_EN OSC_EN TIM15_BKIN - - - - -

STM32G070CB/KB/RB
 *

Table 15. Port D alternate function mapping

STM32G070CB/KB/RB
Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PD0 EVENTOUT SPI2_NSS TIM16_CH1 - - - - -

PD1 EVENTOUT SPI2_SCK TIM17_CH1 - - - - -
USART3_RTS
PD2 TIM3_ETR TIM1_CH1N - - - - -
_DE_CK
PD3 USART2_CTS SPI2_MISO TIM1_CH2N - - - - -
USART2_RTS
PD4 SPI2_MOSI TIM1_CH3N - - - - -
_DE_CK
SPI1_MISO/
PD5 USART2_TX TIM1_BKIN - - - - -
I2S1_MCK
SPI1_MOSI/
PD6 USART2_RX - - - - - -
I2S1_SD
SPI1_SCK/
DS12766 Rev 2

PD8 USART3_TX - - - - - -
I2S1_CK
SPI1_NSS/
PD9 USART3_RX TIM1_BKIN2 - - - - -
I2S1_WS

Table 16. Port F alternate function mapping

Port AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

PF0 - - TIM14_CH1 - - - - -
PF1 OSC_EN - TIM15_CH1N - - - - -
39/93
Electrical characteristics STM32G070CB/KB/RB

5 Electrical characteristics

5.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.
Parameter values defined at temperatures or in temperature ranges out of the ordering
information scope are to be ignored.
Packages used for characterizing certain electrical parameters may differ from the
commercial packages as per the ordering information.

5.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TA(max) (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).

5.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).

5.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

5.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 6.

5.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 7.

Figure 6. Pin loading conditions Figure 7. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

40/93 DS12766 Rev 2

STM32G070CB/KB/RB Electrical characteristics

5.1.6 Power supply scheme

Figure 8. Power supply scheme

VBAT

Backup circuitry
1.55 V to 3.6 V (LSE, RTC and
Power backup registers)
switch

VDD VCORE
VDD/VDDA VDD
Regulator

VDDIO1
OUT

Level shifter
Kernel logic
1 x 100 nF IO (CPU, digital and
GPIOs
+ 1 x 4.7 μF IN
logic memories)

VSS

VDDA
VREF VREF+
VREF+
ADC
100 nF VREF-

VSSA
VSS/VSSA

MSv47984V1

Caution: Power supply pin pair (VDD/VDDA and VSS/VSSA) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below, the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.

5.1.7 Current consumption measurement

Figure 9. Current consumption measurement scheme

IDDVBAT
VBAT
VBAT

IDD
VDD VDD/VDDA
(VDDA)

MSv47901V1

DS12766 Rev 2 41/93

80
Electrical characteristics STM32G070CB/KB/RB

5.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 17, Table 18 and Table 19
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
All voltages are defined with respect to VSS.

Table 17. Voltage characteristics

Symbol Ratings Min Max Unit

VDD External supply voltage - 0.3 4.0

VBAT External supply voltage on VBAT pin - 0.3 4.0
VREF+ External voltage on VREF+ pin - 0.3 Min(VDD + 0.4, 4.0)
V
Input voltage on FT_xx pins except FT_c - 0.3 VDD + 4.0(2)
VIN(1)
Input voltage on FT_c pins - 0.3 5.5
Input voltage on any other pin - 0.3 4.0
1. Refer to Table 18 for the maximum allowed injected current values.
2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.

Table 18. Current characteristics

Symbol Ratings Max Unit

IVDD/VDDA Current into VDD/VDDA power pin (source)(1) 100

IVSS/VSSA Current out of VSS/VSSA ground pin (sink)(1) 100
Output current sunk by any I/O and control pin except FT_f 15
IIO(PIN) Output current sunk by any FT_f pin 20
Output current sourced by any I/O and control pin 15
mA
Total output current sunk by sum of all I/Os and control pins 80
∑IIO(PIN)
Total output current sourced by sum of all I/Os and control pins 80
Injected current on a FT_xx pin -5 / NA(3)
IINJ(PIN)(2)
Injected current on a TT_a pin(4) -5 / 0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) 25
1. All main power (VDD/VDDA, VBAT) and ground (VSS/VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. A positive injection is induced by VIN > VDDIOx while a negative injection is induced by VIN < VSS. IINJ(PIN) must never be
exceeded. Refer also to Table 17: Voltage characteristics for the maximum allowed input voltage values.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum
value.
4. On these I/Os, any current injection disturbs the analog performances of the device.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).

42/93 DS12766 Rev 2

STM32G070CB/KB/RB Electrical characteristics

Table 19. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJ Maximum junction temperature 150 °C

5.3 Operating conditions

5.3.1 General operating conditions

Table 20. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 64

MHz
fPCLK Internal APB clock frequency - 0 64
VDD/DDA Supply voltage - 2.0(1) 3.6 V
VBAT Backup operating voltage - 1.55 3.6 V
VIN I/O input voltage - -0.3 Min(VDD + 3.6, 5.5)(2) V
TA Ambient temperature(3) - -40 85 °C
TJ Junction temperature - -40 105 °C
1. When RESET is released functionality is guaranteed down to VPDR min.
2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled.
3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided
that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.4: Thermal characteristics.

5.3.2 Operating conditions at power-up / power-down

The parameters given in Table 21 are derived from tests performed under the ambient
temperature condition summarized in Table 20.

Table 21. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rising - ∞
tVDD VDD slew rate µs/V
VDD falling 10 ∞

5.3.3 Embedded reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under the ambient
temperature conditions summarized in Table 20.

DS12766 Rev 2 43/93

80
Electrical characteristics STM32G070CB/KB/RB

Table 22. Embedded reset and power control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit

tRSTTEMPO(2) POR temporization when VDD crosses VPOR VDD rising - 250 400 μs
VPOR(2) Power-on reset threshold - 2.06 2.10 2.14 V
VPDR(2) Power-down reset threshold - 1.96 2.00 2.04 V
Hysteresis in
continuous - 20 -
Vhyst_POR_PDR Hysteresis of VPOR and VPDR mode mV
Hysteresis in
- 30 -
other mode
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
2. Guaranteed by design.

5.3.4 Embedded voltage reference

The parameters given in Table 23 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions.

Table 23. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage -40°C < TJ < 105°C 1.182 1.212 1.232 V
ADC sampling time when reading
tS_vrefint (1) - 4(2) - - µs
the internal reference voltage
Start time of reference voltage
tstart_vrefint - - 8 12(2) µs
buffer when ADC is enable
VREFINT buffer consumption from
IDD(VREFINTBUF) - - 12.5 20(2) µA
VDD when converted by ADC
Internal reference voltage spread
∆VREFINT VDD = 3 V - 5 7.5(2) mV
over the temperature range
TCoeff_vrefint Temperature coefficient - - 30 50(2) ppm/°C
ACoeff Long term stability 1000 hours, T = 25 °C - 300 1000(2) ppm
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.

44/93 DS12766 Rev 2

STM32G070CB/KB/RB Electrical characteristics

Figure 10. VREFINT vs. temperature

V
1.235

1.23

1.225

1.22

1.215

1.21

1.205

1.2

1.195

1.19

1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V1

5.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 9: Current consumption
measurement scheme.

Typical and maximum current consumption

The MCU is placed under the following conditions:
 All I/O pins are in analog input mode
 All peripherals are disabled except when explicitly mentioned
 The Flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0454 reference manual).
 When the peripherals are enabled fPCLK = fHCLK
 For Flash memory and shared peripherals fPCLK = fHCLK = fHCLKS
Unless otherwise stated, values given in Table 24 through Table 30 are derived from tests
performed under ambient temperature and supply voltage conditions summarized in
Table 20: General operating conditions.

DS12766 Rev 2 45/93

80
Electrical characteristics STM32G070CB/KB/RB

Table 24. Current consumption in Run and Low-power run modes

at different die temperatures
Conditions Typ Max(1)
Symbol Parameter Unit
General fHCLK Fetch 25°C 85°C 25°C 85°C
from(2)
64 MHz 6.9 7.0 8.0 8.4
56 MHz 6.1 6.3 7.1 7.6
48 MHz Flash 5.5 5.6 6.2 6.8
32 MHz memory 3.9 4.0 4.8 5.2
Range 1;
PLL enabled; 24 MHz 3.1 3.2 3.7 4.3
fHCLK = fHSI bypass 16 MHz 2.0 2.1 2.5 3.0
(≤16 MHz), 
fHCLK = fPLLRCLK 64 MHz 6.6 6.8 7.6 7.9
(>16 MHz); 56 MHz 5.8 6.1 6.7 7.0
(3)
48 MHz 5.2 5.3 6.0 6.2
Supply SRAM
IDD(Run) current in Run 32 MHz 3.6 3.7 4.2 4.6 mA
mode
24 MHz 2.9 3.0 3.4 3.7
16 MHz 1.9 1.9 2.3 2.5
16 MHz 1.5 1.7 2.0 2.4
Flash
Range 2; 8 MHz 0.9 1.0 1.4 1.6
memory
PLL enabled;
2 MHz 0.3 0.3 0.6 1.0
fHCLK = fHSI bypass
(≤16 MHz),  16 MHz 1.5 1.5 1.9 2.2
fHCLK = fPLLRCLK
8 MHz 0.8 0.9 1.3 1.4
(>16 MHz); SRAM
(3)
4 MHz 0.4 0.6 0.8 1.1
2 MHz 0.3 0.3 0.6 1.0
2 MHz 242 281 636 954
1 MHz 116 171 606 924
Flash
500 kHz 74 116 558 840
memory
PLL disabled; 125 kHz 29 73 540 624
Supply fHCLK = fHSE bypass
current in (> 32 kHz), 32 kHz 19 62 450 570
IDD(LPRun) µA
Low-power fHCLK = fLSE bypass 2 MHz 219 254 582 840
run mode (= 32 kHz);
(3) 1 MHz 105 154 516 792
500 kHz SRAM 67 105 438 750
125 kHz 26 65 402 528
32 kHz 17 61 390 426
1. Based on characterization results, not tested in production.
2. Prefetch and cache enabled when fetching from Flash
3. VDD = 3.0 V for values in Typ columns and 3.6 V for values in Max columns, all peripherals disabled, cache enabled,
prefetch disabled for code and data fetch from Flash and enabled from SRAM

46/93 DS12766 Rev 2

STM32G070CB/KB/RB Electrical characteristics

Table 25. Current consumption in Sleep and Low-power sleep modes

Conditions Typ Max(1)
Symbol Parameter Unit
General Voltage fHCLK 25°C 85°C 25°C 85°C
scaling
64 MHz 2.0 2.1 2.2 2.5
56 MHz 1.8 1.9 2.0 2.3

Flash memory enabled; 48 MHz 1.5 1.7 1.9 2.0

Range 1
fHCLK = fHSE bypass 32 MHz 1.1 1.2 1.4 1.6
Supply
(≤16 MHz; PLL disabled), 
IDD(Sleep) current in 24 MHz 0.9 1.0 1.2 1.3 mA
f =f
Sleep mode HCLK PLLRCLK
(>16 MHz; PLL enabled); 16 MHz 0.6 0.7 0.7 0.8
All peripherals disabled 16 MHz 0.4 0.6 0.6 0.7
Range 2 8 MHz 0.3 0.3 0.4 0.6
2 MHz 0.1 0.2 0.2 0.5
2 MHz 65 108 180 432
Flash memory disabled;
Supply 1 MHz 36 83 156 396
PLL disabled;
current in
IDD(LPSleep) fHCLK = fHSE bypass (> 32 kHz), 500 kHz 27 70 150 300 µA
Low-power
fHCLK = fLSE bypass (= 32 kHz);
sleep mode 125 kHz 17 61 132 282
All peripherals disabled
32 kHz 15 58 132 270
1. Based on characterization results, not tested in production.

Table 26. Current consumption in Stop 0 mode

Conditions Typ Max(1)
Symbol Parameter Unit
VDD 25 °C 85 °C 25 °C 85 °C

2.4 V 110 160 150 264

Supply current
IDD(Stop 0) in Stop 0 3V 110 160 150 288 µA
mode
3.6 V 116 165 156 300
1. Based on characterization results, not tested in production.

Table 27. Current consumption in Stop 1 mode

Conditions(1) Typ Max(2)
Symbol Parameter Unit
RTC VDD 25 °C 85 °C 25 °C 85 °C

2.4 V 3.6 35 12 144

Disabled 3V 3.7 36 18 162

Supply current 3.6 V 4.2 36 22 168

IDD(Stop 1) µA
in Stop 1 mode 2.4 V 4.1 35 13 144
Enabled
(clocked by 3V 4.4 36 19 168
LSE bypass)
3.6 V 4.8 37 24 174

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1. Flash memory not powered.

2. Based on characterization results, not tested in production.

Table 28. Current consumption in Standby mode

Conditions Typ Max(1)
Symbol Parameter Unit
General VDD 25 °C 85 °C 25 °C 85 °C
2.4 V 1.0 2.2 2.7 14
RTC disabled 3.0 V 1.2 2.6 3.5 17
Supply current in 3.6 V 1.4 3.2 4.1 19
IDD(Standby) µA
Standby mode 2.4 V 1.5 2.8 3.5 17
RTC enabled,
3.0 V 1.8 3.3 4.6 21
clocked by LSI
3.6 V 2.2 4.1 6.4 25
1. Based on characterization results, not tested in production.

Table 29. Current consumption in VBAT mode

Conditions Typ
Symbol Parameter Unit
RTC VBAT 25 °C 85 °C

Enabled, clocked by 2.4 V 286 391

LSE bypass at 3.0 V 402 523
32.768 kHz 3.6 V 556 721
Supply current in
IDD_VBAT nA
VBAT mode 2.4 V 407 528
Enabled, clocked by
LSE crystal at 3.0 V 517 660
32.768 kHz 3.6 V 660 897

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 47: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.

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I/O dynamic current consumption

In addition to the internal peripheral current consumption measured previously (see
Table 30: Current consumption of peripherals, the I/Os used by an application also
contribute to the current consumption. When an I/O pin switches, it uses the current from
the I/O supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive
load (internal or external) connected to the pin:

I SW = V DDIO1  f SW  C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIO1 is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in the following table. The MCU
is placed under the following conditions:
 All I/O pins are in Analog mode
 The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
 Ambient operating temperature and supply voltage conditions summarized in Table 17:
Voltage characteristics
 The power consumption of the digital part of the on-chip peripherals is given in the
following table. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.

Table 30. Current consumption of peripherals

Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

IOPORT Bus IOPORT 1.0 0.7 0.5

GPIOA IOPORT 3.4 2.8 3.0
GPIOB IOPORT 3.1 2.6 2.5
GPIOC IOPORT 2.9 2.5 3.0
GPIOD IOPORT 1.8 1.5 1.5
GPIOF IOPORT 0.7 0.6 1.0
Bus matrix AHB 3.2 2.2 2.8
All AHB Peripherals AHB 15.0 12.5 14.0

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Table 30. Current consumption of peripherals (continued)

Consumption in µA/MHz
Peripheral Bus
Low-power run
Range 1 Range 2
and sleep

DMA1/DMAMUX AHB 4.7 3.8 4.5

CRC AHB 0.5 0.4 0.5
FLASH AHB 4.1 3.5 4.0
All APB peripherals APB 46.5 47.5 48.0
AHB to APB bridge(1) APB 0.2 0.2 0.1
PWR APB 0.4 0.3 0.5
SYSCFG APB 0.4 0.4 0.3
WWDG APB 0.4 0.3 0.5
TIM1 APB 7.3 6.1 6.5
TIM3 APB 3.6 3.0 2.5
TIM6 APB 0.7 0.6 0.5
TIM7 APB 0.7 0.7 1.0
TIM14 APB 1.5 1.2 1.5
TIM15 APB 4.0 3.3 3.0
TIM16 APB 2.3 2.0 2.0
TIM17 APB 0.7 0.7 0.5
I2C1 APB 3.8 3.1 3.5
I2C2 APB 0.7 0.6 1.0
SPI2 APB 1.5 1.2 1.0
USART1 APB 7.2 6.0 6.5
USART2 APB 7.2 6.0 6.0
USART3 APB 2.0 1.7 2.0
USART4 APB 2.0 1.7 2.0
ADC APB 2.0 1.7 2.0
1. The AHB to APB Bridge is automatically active when at least one peripheral is ON on the APB.

5.3.6 Wakeup time from low-power modes and voltage scaling

transition times
The wakeup times given in Table 31 are the latency between the event and the execution of
the first user instruction.

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Table 31. Low-power mode wakeup times(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time from

tWUSLEEP Sleep to Run - 11 11
mode
CPU
Wakeup time from Transiting to Low-power-run-mode execution in Flash cycles
tWULPSLEEP Low-power sleep memory not powered in Low-power sleep mode; 11 14
mode HCLK = HSI16 / 8 = 2 MHz
Transiting to Run-mode execution in Flash memory not
powered in Stop 0 mode;
5.6 6
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP0 µs
Stop 0 Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 0 mode;
2 2.4
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in Flash memory not
powered in Stop 1 mode;
9.0 11.2
HCLK = HSI16 = 16 MHz;
Regulator in Range 1 or Range 2
Transiting to Run-mode execution in SRAM or in Flash
memory powered in Stop 1 mode;
5 7.5
HCLK = HSI16 = 16 MHz;
Wakeup time from Regulator in Range 1 or Range 2
tWUSTOP1 µs
Stop 1 Transiting to Low-power-run-mode execution in Flash
memory not powered in Stop 1 mode;
22 25.3
HCLK = HSI16/8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Low-power-run-mode execution in SRAM or
in Flash memory powered in Stop 1 mode;
18 23.5
HCLK = HSI16 / 8 = 2 MHz;
Regulator in low-power mode (LPR = 1 in PWR_CR1)
Transiting to Run mode;
Wakeup time from
tWUSTBY HCLK = HSI16 = 16 MHz; 14.5 30 µs
Standby mode
Regulator in Range 1
Wakeup time from Transiting to Run mode;
tWULPRUN Low-power run 5 7 µs
HSISYS = HSI16/8 = 2 MHz
mode(2)
1. Based on characterization results, not tested in production.
2. Time until REGLPF flag is cleared in PWR_SR2.

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Table 32. Regulator mode transition times(1)

Symbol Parameter Conditions Typ Max Unit

Transition times between regulator

tVOST HSISYS = HSI16 20 40 µs
Range 1 and Range 2(2)
1. Based on characterization results, not tested in production.
2. Time until VOSF flag is cleared in PWR_SR2.

5.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 11 for recommended clock input waveform.

Table 33. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
- 8 48
Range 1
fHSE_ext User external clock source frequency MHz
Voltage scaling
- 8 26
Range 2
VHSEH OSC_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1
V
VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIO1
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Guaranteed by design.

Figure 11. High-speed external clock source AC timing diagram

tw(HSEH)

VHSEH
90%
10%
VHSEL

tr(HSE) t
tf(HSE) tw(HSEL)
THSE

MS19214V2

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Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 12 for recommended clock input waveform.

Table 34. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext User external clock source frequency - - 32.768 1000 kHz

VLSEH OSC32_IN input pin high level voltage - 0.7 VDDIO1 - VDDIO1
V
VLSEL OSC32_IN input pin low level voltage - VSS - 0.3 VDDIO1
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
1. Guaranteed by design.

Figure 12. Low-speed external clock source AC timing diagram

tw(LSEH)

VLSEH
90%
10%
VLSEL

tr(LSE) t
tf(LSE) tw(LSEL)
TLSE

MS19215V2

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 35. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 35. HSE oscillator characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz

RF Feedback resistor - - 200 - kΩ

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Table 35. HSE oscillator characteristics(1) (continued)

Symbol Parameter Conditions(2) Min Typ Max Unit
(3)
During startup - - 5.5
VDD = 3 V, 
Rm = 30 Ω,  - 0.44 -
CL = 10 pF@8 MHz
VDD = 3 V, 
Rm = 45 Ω,  - 0.45 -
CL = 10 pF@8 MHz

IDD(HSE) HSE current consumption VDD = 3 V,  mA

Rm = 30 Ω,  - 0.68 -
CL = 5 pF@48 MHz
VDD = 3 V, 
Rm = 30 Ω, - 0.94 -
CL = 10 pF@48 MHz
VDD = 3 V, 
Rm = 30 Ω,  - 1.77 -
CL = 20 pF@48 MHz
Maximum critical crystal
Gm Startup - - 1.5 mA/V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 13). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

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Figure 13. Typical application with an 8 MHz crystal

Resonator with integrated

capacitors
CL1

OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain

REXT (1) OSC_OUT

CL2

MS19876V1

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 36. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 36. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

LSEDRV[1:0] = 00 
- 250 -
Low drive capability
LSEDRV[1:0] = 01 
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10 
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11 
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.

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3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 14. Typical application with a 32.768 kHz crystal

Resonator with integrated

capacitors
CL1

OSC32_IN fLSE

32.768 kHz Drive

resonator programmable
amplifier

OSC32_OUT
CL2

MS30253V2

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

5.3.8 Internal clock source characteristics

The parameters given in Table 37 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 20: General operating
conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 37. HSI16 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

HSI16 oscillator frequency drift over TA= 0 to 85 °C -1 - 1 %

∆Temp(HSI16)
temperature TA= -40 to 85 °C -2 - 1.5 %
HSI16 oscillator frequency drift over
∆VDD(HSI16) VDD=VDD(min) to 3.6 V -0.1 - 0.05 %
VDD
From code 127 to 128 -8 -6 -4
From code 63 to 64
-5.8 -3.8 -1.8
TRIM HSI16 frequency user trimming step From code 191 to 192 %
For all other code
0.2 0.3 0.4
increments
DHSI16(2) Duty Cycle - 45 - 55 %
tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs

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Table 37. HSI16 oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit
(2)
tstab(HSI16) HSI16 oscillator stabilization time - - 3 5 μs
IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA
1. Based on characterization results, not tested in production.
2. Guaranteed by design.

Low-speed internal (LSI) RC oscillator

Table 38. LSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.0 V, TA = 30 °C 31.04 - 32.96

fLSI LSI frequency VDD = VDD(min) to 3.6 V, TA = -40 to kHz
29.5 - 34
85 °C
tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs
(2)
tSTAB(LSI) LSI oscillator stabilization time 5% of final frequency - 125 180 μs
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
1. Based on characterization results, not tested in production.
2. Guaranteed by design.

5.3.9 PLL characteristics

The parameters given in Table 39 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 20: General operating conditions.

Table 39. PLL characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock frequency(2) - 2.66 - 16 MHz

DPLL_IN PLL input clock duty cycle - 45 - 55 %

Voltage scaling Range 1 3.09 - 122

fPLL_P_OUT PLL multiplier output clock P MHz
Voltage scaling Range 2 3.09 - 40
Voltage scaling Range 1 12 - 64
fPLL_R_OUT PLL multiplier output clock R MHz
Voltage scaling Range 2 12 - 16
Voltage scaling Range 1 96 - 344
fVCO_OUT PLL VCO output MHz
Voltage scaling Range 2 96 - 128
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 50 -
Jitter System clock 56 MHz ±ps
RMS period jitter - 40 -

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Table 39. PLL characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

VCO freq = 96 MHz - 200 260

PLL power consumption
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
on VDD(1)
VCO freq = 344 MHz - 520 650
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the two PLLs.

5.3.10 Flash memory characteristics

Table 40. Flash memory characteristics(1)

Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 85 125 µs

Normal programming 2.7 4.6
tprog_row Row (32 double word) programming time
Fast programming 1.7 2.8
Normal programming 21.8 36.6 ms
tprog_page Page (2 Kbyte) programming time
Fast programming 13.7 22.4
tERASE Page (2 Kbyte) erase time - 22.0 40.0
Normal programming 1.4 2.4
tprog_bank Bank (128 Kbyte(2)) programming time s
Fast programming 0.9 1.4
tME Mass erase time - 22.1 40.1 ms
Programming 3 -
IDD(FlashA) Average consumption from VDD Page erase 3 - mA
Mass erase 3 -
Programming, 2 µs peak
7 -
IDD(FlashP) Maximum current (peak) duration mA
Erase, 41 µs peak duration 7 -
1. Guaranteed by design.
2. Values provided also apply to devices with less Flash memory than one 128 Kbyte bank

Table 41. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit

NEND Endurance TA = -40 to +85 °C 1 kcycles

tRET Data retention 1 kcycle(2) at TA = 85 °C 15 Years
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.

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5.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
 Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
 FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 42. They are based on the EMS levels and classes
defined in application note AN1709.

Table 42. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, TA = +25 °C, 

Voltage limits to be applied on any I/O pin to
VFESD fHCLK = 64 MHz, LQFP64, 2B
induce a functional disturbance
conforming to IEC 61000-4-2
Fast transient voltage burst limits to be applied VDD = 3.3 V, TA = +25 °C, 
VEFTB through 100 pF on VDD and VSS pins to induce a fHCLK = 64 MHz, LQFP64, 5A
functional disturbance conforming to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
 corrupted program counter
 unexpected reset
 critical data corruption (for example control registers)

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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 43. EMI characteristics

Max vs.
Monitored [fHSE/fHCLK]
Symbol Parameter Conditions Unit
frequency band
8 MHz / 64 MHz

0.1 MHz to 30 MHz 7

30 MHz to 130 MHz -1
VDD = 3.6 V, TA = 25 °C, dBµV
SEMI Peak level LQFP64 package 130 MHz to 1 GHz 8
compliant with IEC 61967-2
1 GHz to 2 GHz 7
EMI level 2.5 -

5.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 44. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic discharge voltage TA = +25 °C, conforming to

VESD(HBM) 2 2000
(human body model) ANSI/ESDA/JEDEC JS-001
V
Electrostatic discharge voltage TA = +25 °C, conforming to
VESD(CDM) C2a 500
(charge device model) ANSI/ESDA/JEDEC JS-002
1. Based on characterization results, not tested in production.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
 A supply overvoltage is applied to each power supply pin.
 A current is injected to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 45. Electrical sensitivity

Symbol Parameter Conditions Class

LU Static latch-up class TA = +85 °C conforming to JESD78 II Level A

5.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIO1 (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional
limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.

Table 46. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

All except PA4, PA5, PA6, PB0,

-5 N/A mA
PB3, and PC0
Injected current on
IINJ
pin PA4, PA5 -5 0 mA
PA6, PB0, PB3, and PC0 0 N/A mA
1. Based on characterization results, not tested in production.

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5.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 47 are derived from tests
performed under the conditions summarized in Table 20: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.

Table 47. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.3 x VDDIO1
All (2)
except VDD(min) < VDDIO1 < 3.6 V - -
I/O input low level FT_c 0.39 x VDDIO1
VIL(1) - 0.06 (3) V
voltage
VDDIO1 < 2.7 V - - 0.3 x VDDIO1
FT_c
VDD(min) < VDDIO1 < 2.7 V - - 0.25 x VDDIO1
0.7 x VDDIO1 (
All 2) - -
I/O input high level except VDD(min) < VDDIO1 < 3.6 V
VIH(1) FT_c 0.49 x VDDIO1 V
voltage - -
+ 0.26(3)
FT_c VDD(min) < VDDIO1 < 3.6 V 0.7 x VDDIO1 - 5
TT_xx,
Vhys(3) I/O input hysteresis FT_xx, VDD(min) < VDDIO1 < 3.6 V - 200 - mV
NRST
FT_xx 0 < VIN ≤ VDDIO1 - - ±70
except
VDDIO1 ≤ VIN ≤ VDDIO1+1 V - - 600(4)
FT_c
and VDDIO1 +1 V < VIN ≤
- - 150(4)
FT_d 5.5 V(3)
0 < VIN ≤ VDDIO1 - - 2000
Input leakage FT_c
Ilkg VDDIO1 < VIN ≤ 5 V - - 3000(4) nA
current(3)
0 < VIN ≤ VDDIO1 - - 4500
FT_d
VDDIO1 < VIN ≤ 5.5 V - - 9000(4)
0 < VIN ≤ VDDIO1 - - ±150
TT_a VDDIO1 < VIN ≤
- - 2000(4)
VDDIO1 + 0.3 V
Weak pull-up
RPU equivalent resistor VIN = VSS 25 40 55 kΩ
(5)

Weak pull-down
RPD V = VDDIO1 25 40 55 kΩ
equivalent resistor(5) IN
CIO I/O pin capacitance - - 5 - pF
1. Refer to Figure 15: I/O input characteristics.
2. Tested in production.
3. Guaranteed by design.

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4. This value represents the pad leakage of the I/O itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters, as shown
in Figure 15.

Figure 15. I/O input characteristics

3

Minimum required
2.5
logic level 1 zone
ent)
req uirem
2 standard TTL standard requirement
S
(CMO
V DDIO
VIN (V) = 0.7
V IHmin
1.5
+ 0.26
0.49 VDDIO
VIHmin = Undefined input range

1
VDDIO - 0.06
VILmax = 0.39 dard require
ment)
TTL standard requirement
(CMOS stan
VDDIO
0.5
VILmax = 0.3
Minimum required
logic level 0 zone
0
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6

Device characteristics VDDIO (V)

Test thresholds MSv47926V1

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±6 mA, and up to
±15 mA with relaxed VOL/VOH.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
 The sum of the currents sourced by all the I/Os on VDDIO1, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 17: Voltage characteristics).
 The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating IVSS (see Table 17:
Voltage characteristics).

Output voltage levels

Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in

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Table 20: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).

Table 48. Output voltage characteristics(1)

Symbol Parameter Conditions Min Max Unit
(2)
VOL Output low level voltage for an I/O pin CMOS port  - 0.4
|IIO| = 2 mA for FT_c I/Os
VOH Output high level voltage for an I/O pin = 6 mA for other I/Os VDDIO1 - 0.4 -
VDDIO1 ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin TTL port(2)  - 0.4
|IIO| = 2 mA for FT_c I/Os
VOH(3) Output high level voltage for an I/O pin = 6 mA for other I/Os 2.4 -
VDDIO1 ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin All I/Os except FT_c - 1.3 V
|IIO| = 15 mA
VOH(3) Output high level voltage for an I/O pin VDDIO1 ≥ 2.7 V VDDIO1 - 1.3 -

VOL(3) Output low level voltage for an I/O pin |IIO| = 1 mA for FT_c I/Os - 0.4
VOH(3) Output high level voltage for an I/O pin = 3 mA for other I/Os VDDIO1 - 0.45 -
|IIO| = 20 mA
VOLFM+ Output low level voltage for an FT I/O - 0.4
VDDIO1 ≥ 2.7 V
(3) pin in FM+ mode (FT I/O with _f option)
|IIO| = 9 mA - 0.4
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 17:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.

Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 16 and
Table 49, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 20: General
operating conditions.

Table 49. I/O AC characteristics(1)(2)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 2
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 0.35
Fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 3
C=10 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 0.45
00
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 100
C=50 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 225
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 75
C=10 pF, 2.0 V ≤ VDDIO1 ≤ 2.7 V - 150

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Table 49. I/O AC characteristics(1)(2) (continued)

Speed Symbol Parameter Conditions Min Max Unit
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 10
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 2
Fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 2.5
01
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 60
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 15
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 30
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 15
Fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 60
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
10
C=50 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 11
C=50 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 22
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 4
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 8
C=30 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 60
C=30 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 30
Fmax Maximum frequency MHz
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 80(3)
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 40
11
C=30 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 5.5
C=30 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 11
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V ≤ VDDIO1 ≤ 3.6 V - 2.5
C=10 pF, 1.6 V ≤ VDDIO1 ≤ 2.7 V - 5
Fmax Maximum frequency - 1 MHz
Fm+ C=50 pF, 1.6 V ≤ VDDIO1 ≤ 3.6 V
Tf Output fall time(4) - 5 ns
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register.
Refer to the RM0454 reference manual for a description of GPIO Port configuration register.
2. Guaranteed by design.
3. This value represents the I/O capability but the maximum system frequency is limited to 64 MHz.
4. The fall time is defined between 70% and 30% of the output waveform, according to I2C specification.

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Figure 16. I/O AC characteristics definition(1)

90% 10%

50% 50%

10% 90%

t r(IO)out t f(IO)out

Maximum frequency is achieved if (t r + t f (≤ 2/3)T and if the duty cycle is (45-55%)

when loaded by the specified capacitance.
MS32132V2

1. Refer to Table 49: I/O AC characteristics.

5.3.15 NRST input characteristics

The NRST input driver uses CMOS technology. It is connected to a permanent 
pull-up resistor, RPU.
Unless otherwise specified, the parameters given in the following table are derived from
tests performed under the ambient temperature and supply voltage conditions summarized
in Table 20: General operating conditions.

Table 50. NRST pin characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

NRST input low level

VIL(NRST) - - - 0.3 x VDDIO1
voltage
V
NRST input high level
VIH(NRST) - 0.7 x VDDIO1 - -
voltage
NRST Schmitt trigger
Vhys(NRST) - - 200 - mV
voltage hysteresis
Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(2)
NRST input filtered
VF(NRST) - - - 70 ns
pulse
NRST input not filtered
VNF(NRST) 2.0 V ≤ VDD ≤ 3.6 V 350 - - ns
pulse
1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).

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Figure 17. Recommended NRST pin protection

External
reset circuit(1) VDD

RPU
NRST(2) Internal reset
Filter

0.1 μF

MS19878V3

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 50: NRST pin characteristics. Otherwise the reset will not be taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.

5.3.16 Analog switch booster

Table 51. Analog switch booster characteristics(1)

Symbol Parameter Min Typ Max Unit

VDD Supply voltage VDD(min) - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs
Booster consumption for
- - 500
VDD ≤ 2.7 V
Booster consumption for
- - 900
2.7 V ≤ VDD ≤ 3.6 V
1. Guaranteed by design.

5.3.17 Analog-to-digital converter characteristics

Unless otherwise specified, the parameters given in Table 52 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 20: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.

Table 52. ADC characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

VDDA Analog supply voltage - 2.0 - 3.6 V

Positive reference - 2 - VDDA

VREF+ V
voltage

Range 1 0.14 - 35
fADC ADC clock frequency MHz
Range 2 0.14 - 16

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Table 52. ADC characteristics(1) (continued)

Symbol Parameter Conditions(2) Min Typ Max Unit

12 bits - - 2.50
10 bits - - 2.92
fs Sampling rate MSps
8 bits - - 3.50
6 bits - - 4.38

External trigger fADC = 35 MHz; 12 bits - - 2.33

fTRIG MHz
frequency 12 bits - - fADC/15
Conversion voltage
VAIN (3) - VSSA - VREF+ V
range
External input
RAIN - - - 50 kΩ
impedance
Internal sample and
CADC - - 5 - pF
hold capacitor
Conversion
tSTAB ADC power-up time - 2
cycle
fADC = 35 MHz 2.35 µs
tCAL Calibration time
- 82 1/fADC
CKMODE = 00 2 - 3 1/fADC

Trigger conversion CKMODE = 01 6.5

tLATR
latency CKMODE = 10 12.5 1/fPCLK
CKMODE = 11 3.5
0.043 - 4.59 µs
ts Sampling time fADC = 35 MHz
1.5 - 160.5 1/fADC

ADC voltage regulator

tADCVREG_STUP start-up time - - - 20 µs
fADC = 35 MHz
0.40 - 4.95 µs
Total conversion time Resolution = 12 bits
tCONV (including sampling ts + 12.5 cycles for successive
time) Resolution = 12 bits approximation 1/fADC
= 14 to 173
Laps of time allowed
between two
tIDLE - - - 100 µs
conversions without
rearm
fs = 2.5 MSps - 410 -
ADC consumption
IDDA(ADC) fs = 1 MSps - 164 - µA
from VDDA
fs = 10 kSps - 17 -

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Table 52. ADC characteristics(1) (continued)

Symbol Parameter Conditions(2) Min Typ Max Unit

fs = 2.5 MSps - 65 -
ADC consumption
IDDV(ADC) fs = 1 MSps - 26 - µA
from VREF+
fs = 10 kSps - 0.26 -
1. Guaranteed by design
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.
3. VREF+ is internally connected to VDDA on some packages.Refer to Section 4: Pinouts, pin description and alternate
functions for further details.

Table 53. Maximum ADC RAIN .

Sampling time at 35 MHz Max. RAIN(1)(2)
Resolution Sampling cycle at 35 MHz
[ns] (Ω)

1.5 43 50
3.5 100 680
7.5 214 2200
12.5 357 4700
12 bits
19.5 557 8200
39.5 1129 15000
79.5 2271 33000
160.5 4586 50000
1.5 43 68
3.5 100 820
7.5 214 3300
12.5 357 5600
10 bits
19.5 557 10000
39.5 1129 22000
79.5 2271 39000
160.5 4586 50000
1.5 43 82
3.5 100 1500
7.5 214 3900
12.5 357 6800
8 bits
19.5 557 12000
39.5 1129 27000
79.5 2271 50000
160.5 4586 50000

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Table 53. Maximum ADC RAIN . (continued)

Sampling time at 35 MHz Max. RAIN(1)(2)
Resolution Sampling cycle at 35 MHz
[ns] (Ω)

1.5 43 390
3.5 100 2200
7.5 214 5600
12.5 357 10000
6 bits
19.5 557 15000
39.5 1129 33000
79.5 2271 50000
160.5 4586 50000
1. Guaranteed by design.
2. I/O analog switch voltage booster must be enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V and
disabled when VDDA ≥ 2.4 V.

Table 54. ADC accuracy(1)(2)(3)

Symbol Parameter Conditions(4) Min Typ Max Unit

Total VDDA=VREF+ < 3.6 V;

ET unadjusted fADC = 35 MHz; fs ≤ 2.5 MSps; - 3 6.5 LSB
error TA = entire range
VDDA=VREF+ < 3.6 V;
EO Offset error fADC = 35 MHz; fs ≤ 2.5 MSps; - 1.5 4.5 LSB
TA = entire range
VDDA=VREF+ < 3.6 V;
EG Gain error fADC = 35 MHz; fs ≤ 2.5 MSps; - 3 5 LSB
TA = entire range
VDDA=VREF+ < 3.6 V;
Differential
ED fADC = 35 MHz; fs ≤ 2.5 MSps; - 1.2 1.5 LSB
linearity error
TA = entire range
VDDA=VREF+ < 3.6 V;
Integral linearity
EL fADC = 35 MHz; fs ≤ 2.5 MSps; - 2.5 3 LSB
error
TA = entire range
VDDA=VREF+ < 3.6 V;
Effective
ENOB fADC = 35 MHz; fs ≤ 2.5 MSps; 9.6 10.2 - bit
number of bits
TA = entire range
Signal-to-noise VDDA=VREF+ < 3.6 V;
SINAD and distortion fADC = 35 MHz; fs ≤ 2.5 MSps; 59.5 63 - dB
ratio TA = entire range
VDDA=VREF+ < 3.6 V;
Signal-to-noise
SNR fADC = 35 MHz; fs ≤ 2.5 MSps; 60 64 - dB
ratio
TA = entire range
VDDA=VREF+ < 3.6 V;
Total harmonic
THD fADC = 35 MHz; fs ≤ 2.5 MSps; - -74 -70 dB
distortion
TA = entire range

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1. Based on characterization results, not tested in production.

2. ADC DC accuracy values are measured after internal calibration.
3. Injecting negative current on any analog input pin significantly reduces the accuracy of A-to-D conversion
of signal on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins
susceptible to receive negative current.
4. I/O analog switch voltage booster enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V
and disabled when VDDA ≥ 2.4 V.

Figure 18. ADC accuracy characteristics

EG
Code
(1) Example of an actual transfer curve
4095
(2) Ideal transfer curve
4094
(3) End point correlation line
4093
ET total unadjusted error: maximum deviation
(2)
between the actual and ideal transfer curves.

ET (3) EO offset error: maximum deviation between the

7 first actual transition and the first ideal one.
(1)
6 EG gain error: deviation between the last ideal
transition and the last actual one.
5
EO EL
4 ED differential linearity error: maximum deviation
between actual steps and the ideal ones.
3 ED
EL integral linearity error: maximum deviation between
2 any actual transition and the end point correlation line.
1 LSB ideal
1

0
1 2 3 4 5 6 7 4093 4094 4095 (VAIN / VREF+)*4095
MSv19880V3

Figure 19. Typical connection diagram using the ADC

VDDA

VT Sample and hold ADC converter

RAIN(1) AINx RADC

12-bit
converter
Cparasitic(2) VT Ilkg (3) CADC
VAIN

MS33900V5

1. Refer to Table 52: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 47: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 47: I/O static characteristics for the values of Ilkg.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 8: Power supply scheme.
The 100 nF capacitor should be ceramic (good quality) and it should be placed as close as
possible to the chip.

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5.3.18 Temperature sensor characteristics

Table 55. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C

(2)
Avg_Slope Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V

tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) - 8 15 µs

tSTART(1) Start-up time when entering in continuous mode(4) - 70 120 µs

tS_temp(1) ADC sampling time when reading the temperature 5 - - µs

Temperature sensor consumption from VDD, when

IDD(TS)(1) - 4.7 7 µA
selected by ADC
1. Guaranteed by design.
2. Based on characterization results, not tested in production.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.
4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

5.3.19 VBAT monitoring characteristics

Table 56. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 39 - kΩ

Q Ratio on VBAT measurement - 3 - -
(1)
Er Error on Q -10 - 10 %
tS_vbat(1) ADC sampling time when reading the VBAT 12 - - µs
1. Guaranteed by design.

Table 57. VBAT charging characteristics

Symbol Parameter Conditions Min Typ Max Unit

Battery VBRS = 0 - 5 -
RBC charging kΩ
resistor VBRS = 1 - 1.5 -

5.3.20 Timer characteristics

The parameters given in the following tables are guaranteed by design. Refer to
Section 5.3.14: I/O port characteristics for details on the input/output alternate function
characteristics (output compare, input capture, external clock, PWM output).

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Table 58. TIMx(1) characteristics

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 64 MHz 15.625 - ns

Timer external clock frequency - 0 fTIMxCLK/2

fEXT MHz
on CH1 to CH4 fTIMxCLK = 64 MHz 0 40

ResTIM Timer resolution TIMx - 16 bit

- 1 65536 tTIMxCLK
tCOUNTER 16-bit counter clock period
fTIMxCLK = 64 MHz 0.015625 1024 µs

Maximum possible count with - - 65536 × 65536 tTIMxCLK

tMAX_COUNT
32-bit counter fTIMxCLK = 64 MHz - 67.10 s
1. TIMx, is used as a general term in which x stands for 1,, 3, 4, 5, 6, 7, 8, 15, 16 or 17.

Table 59. IWDG min/max timeout period at 32 kHz LSI clock(1)

Prescaler divider PR[2:0] bits Min timeout RL[11:0]= 0x000 Max timeout RL[11:0]= 0xFFF Unit

/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings further depend on the phase of the APB interface clock versus the LSI clock, which causes an
uncertainty of one RC period.

5.3.21 Characteristics of communication interfaces

I2C-bus interface characteristics
The I2C-bus interface meets timing requirements of the I2C-bus specification and user
manual rev. 03 for:
 Standard-mode (Sm): with a bit rate up to 100 kbit/s
 Fast-mode (Fm): with a bit rate up to 400 kbit/s
 Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The timings are guaranteed by design as long as the I2C peripheral is properly configured
(refer to the reference manual RM0454) and when the I2CCLK frequency is greater than the
minimum shown in the following table.

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Table 60. Minimum I2CCLK frequency

Symbol Parameter Condition Typ Unit

Standard-mode 2
Analog filter enabled
9
DNF = 0
Fast-mode
Minimum I2CCLK Analog filter disabled
frequency for correct 9
fI2CCLK(min) DNF = 1 MHz
operation of I2C
peripheral Analog filter enabled
18
DNF = 0
Fast-mode Plus
Analog filter disabled
16
DNF = 1

The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDDIO1 is disabled, but is still present. Only FT_f I/O pins
support Fm+ low-level output current maximum requirement. Refer to Section 5.3.14: I/O
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the following table for its
characteristics:

Table 61. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Limiting duration of spikes suppressed

tAF 50 260 ns
by the filter(2)
1. Based on characterization results, not tested in production.
2. Spikes shorter than the limiting duration are suppressed.

SPI/I2S characteristics
Unless otherwise specified, the parameters given in Table 62 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 20: General operating conditions. The additional general conditions
are:
 OSPEEDRy[1:0] set to 11 (output speed)
 capacitive load C = 30 pF
 measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

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Table 62. SPI characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master mode
VDD(min) < VDD < 3.6 V 32
Range 1
Master transmitter
VDD(min) < VDD < 3.6 V 32
Range 1
Slave receiver
VDD(min) < VDD < 3.6 V 32
fSCK Range 1
SPI clock frequency - - MHz
1/tc(SCK)
Slave transmitter/full duplex
2.7 < VDD < 3.6 V 32
Range 1
Slave transmitter/full duplex
VDD(min) < VDD < 3.6 V 23
Range 1
VDD(min) < VDD < 3.6 V
8
Range 2
tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 4 ₓ TPCLK - - ns
th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2 ₓ TPCLK - - ns
TPCLK TPCLK
tw(SCKH) SCK high time Master mode TPCLK ns
- 1.5 + 1.5
TPCLK TPCLK
tw(SCKL) SCK low time Master mode TPCLK ns
- 1.5 + 1.5
Master data input setup
tsu(MI) - 1 - - ns
time
Slave data input setup
tsu(SI) - 1 - - ns
time
Master data input hold
th(MI) - 5 - - ns
time
Slave data input hold
th(SI) - 1 - - ns
time
ta(SO) Data output access time Slave mode 9 - 34 ns
tdis(SO) Data output disable time Slave mode 9 - 16 ns
2.7 < VDD < 3.6 V
- 9 14
Range 1
Slave data output valid VDD(min) < VDD < 3.6 V
tv(SO) - 9 21 ns
time Range 1
VDD(min) < VDD < 3.6 V
- 11 24
Voltage Range 2

Master data output valid

tv(MO) - - 3 5 ns
time

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Table 62. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Slave data output hold

th(SO) - 5 - - ns
time

Master data output hold

th(MO) - 1 - - ns
time
1. Based on characterization results, not tested in production.

Figure 20. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH) tr(SCK)

CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

th(SI)
tsu(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41658V1

Figure 21. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK)

tsu(NSS) tw(SCKH) tf(SCK) th(NSS)

CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V1

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

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Figure 22. SPI timing diagram - master mode

High

NSS input

tc(SCK)
SCK Output

CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1

tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MSB IN BIT6 IN LSB IN

th(MI)
MOSI
MSB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
ai14136c

1. Measurement points are set at CMOS levels: 0.3 VDD and 0.7 VDD.

Table 63. I2S characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK= 256 x Fs; (Fs = audio sampling

fMCK I2S main clock output frequency) 2.048 49.152 MHz
Fsmin = 8 kHz; Fsmax = 192 kHz;
Master data - 64xFs
fCK I2S clock frequency MHz
Slave data - 64xFs

I2S clock frequency duty

DCK Slave receiver 30 70 %
cycle

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Table 63. I2S characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

tv(WS) WS valid time Master mode - 8

th(WS) WS hold time Master mode 2 -

tsu(WS) WS setup time Slave mode 4 -

th(WS) WS hold time Slave mode 2 -

tsu(SD_MR) Master receiver 4 -
Data input setup time
tsu(SD_SR) Slave receiver 5 -
th(SD_MR) Master receiver 4.5 -
Data input hold time
th(SD_SR) Slave receiver 2 - ns
after enable edge; 2.7 < VDD < 3.6V 16
Data output valid time -
tv(SD_ST) -
slave transmitter after enable edge;
23
VDD(min) < VDD < 3.6V
Data output valid time -
tv(SD_MT) after enable edge - 5.5
master transmitter
Data output hold time -
th(SD_ST) after enable edge 8 -
slave transmitter
Data output hold time -
th(SD_MT) after enable edge 1 -
master transmitter
1. Based on characterization results, not tested in production.

Figure 23. I2S slave timing diagram (Philips protocol)

tc(CK)

CPOL = 0
CK Input

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39721V1

1. Measurement points are done at CMOS levels: 0.3 VDDIO1 and 0.7 VDDIO1.
2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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Figure 24. I2S master timing diagram (Philips protocol)

90%
10%
tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

MSv39720V1

1. Based on characterization results, not tested in production.

2. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

USART characteristics
Unless otherwise specified, the parameters given in Table 64 for USART are derived from
tests performed under the ambient temperature, fPCLKx frequency and supply voltage
conditions summarized in Table 20: General operating conditions. The additional general
conditions are:
 OSPEEDRy[1:0] set to 10 (output speed)
 capacitive load C = 30 pF
 measurement points at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, CK, TX, and RX for USART).

Table 64. USART characteristics

Symbol Parameter Conditions Min Typ Max Unit

Master mode - - 8
fCK USART clock frequency MHz
Slave mode - - 21

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Table 64. USART characteristics

Symbol Parameter Conditions Min Typ Max Unit

tsu(NSS) NSS setup time Slave mode tker + 2 - -

th(NSS) NSS hold time Slave mode 2 - -
tw(CKH) CK high time 1 / fCK / 2 1 / fCK / 2
Master mode 1 / fCK / 2
tw(CKL) CK low time -1 +1

Master mode tker + 2 - -

tsu(RX) Data input setup time
Slave mode 4 - -
ns
Master mode 1 - -
th(RX) Data input hold time
Slave mode 0.5 - -
Master mode - 0.5 1
tv(TX) Data output valid time
Slave mode - 10 19
Master mode 0 - -
th(TX) Data output hold time
Slave mode 7 - -

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6 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

6.1 LQFP64 package information

LQFP64 is a 64-pin, 10 x 10 mm low-profile quad flat package.

Figure 25. LQFP64 package outline

SEATING PLANE
C
A2
A

0.25 mm
GAUGE PLANE
A1

c
ccc C

A1
D K
D1 L
D3 L1
48 33

32
49

b
E1
E3

64 17

PIN 1 1 16
IDENTIFICATION e
5W_ME_V3

1. Drawing is not to scale.

Table 65. LQFP64 package mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

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Table 65. LQFP64 package mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -
E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
K 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 26. Recommended footprint for LQFP64 package

48 33

0.3
49 0.5 32

12.7

10.3

10.3
64 17

1.2
1 16

7.8

12.7

ai14909c

1. Dimensions are expressed in millimeters.

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Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 27. LQFP64 package marking example

Revision code

R
STM32G070 Product identification (1)

RBT6
Date code

Y WW
Pin 1 identifier

MSv42184V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST's Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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6.2 LQFP48 package information

LQFP48 is a 48-pin, 7 x 7 mm low-profile quad flat package.

Figure 28. LQFP48 package outline

SEATING
PLANE
C

A2
A

A1

c
0.25 mm
GAUGE PLANE
ccc C

D K

A1
L
D1 L1
D3
36 25

37 24

E1
E3

48 13
PIN 1
IDENTIFICATION 1 12

e 5B_ME_V2

1. Drawing is not to scale.

Table 66. LQFP48 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 8.800 9.000 9.200 0.3465 0.3543 0.3622
D1 6.800 7.000 7.200 0.2677 0.2756 0.2835
D3 - 5.500 - - 0.2165 -

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Table 66. LQFP48 mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E 8.800 9.000 9.200 0.3465 0.3543 0.3622

E1 6.800 7.000 7.200 0.2677 0.2756 0.2835
E3 - 5.500 - - 0.2165 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 29. Recommended footprint for LQFP48 package

0.50
1.20

0.30
36 25
37 24

0.20
7.30
9.70 5.80

7.30

48 13
1 12

1.20

5.80

9.70

ai14911d

1. Dimensions are expressed in millimeters.

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Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 30. LQFP48 package marking example

Product identification (1) STM32G070

CBT6

Date code

Y WW
Revision code
Pin 1 identifier
R

MSv42185V1

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST's Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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6.3 LQFP32 package information

LQFP32 is a 32-pin, 7 x 7 mm low-profile quad flat package.

Figure 31. LQFP32 package outline

SEATING
PLANE
C A2
A

c
A1

0.25 mm
GAUGE PLANE
ccc C

K
D
L

A1
D1
L1
D3

24 17

25 16
b

E1
E3

32 9

PIN 1
IDENTIFICATION 1 8

e 5V_ME_V2

1. Drawing is not to scale.

Table 67. LQFP32 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

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Table 67. LQFP32 mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

b 0.300 0.370 0.450 0.0118 0.0146 0.0177

c 0.090 - 0.200 0.0035 - 0.0079
D 8.800 9.000 9.200 0.3465 0.3543 0.3622
D1 6.800 7.000 7.200 0.2677 0.2756 0.2835
D3 - 5.600 - - 0.2205 -
E 8.800 9.000 9.200 0.3465 0.3543 0.3622
E1 6.800 7.000 7.200 0.2677 0.2756 0.2835
E3 - 5.600 - - 0.2205 -
e - 0.800 - - 0.0315 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.100 - - 0.0039
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 32. Recommended footprint for LQFP32 package

0.80

1.20

24 17
25 16 0.50

0.30

7.30

6.10

9.70
7.30

32 9
1 8

1.20

6.10

9.70
5V_FP_V2

1. Dimensions are expressed in millimeters.

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Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 33. LQFP32 package marking example

Product identification (1) STM32

G070KBT6
Date code

Pin 1 identifier
Y WW
Revision code
R

MSv42186V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST's Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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6.4 Thermal characteristics

The operating junction temperature TJ must never exceed the maximum given in
Table 20: General operating conditions.
The maximum junction temperature in °C that the device can reach if respecting the
operating conditions, is:
TJ(max) = TA(max) + PD(max) x ΘJA
where:
 TA(max) is the maximum operating ambient temperature in °C,
 ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
 PD = PINT + PI/O,
– PINT is power dissipation contribution from product of IDD and VDD
– PI/O is power dissipation contribution from output ports where:
PI/O = Σ (VOL × IOL) + Σ ((VDDIO1 – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high
level in the application.

Table 68. Package thermal characteristics

Symbol Parameter Package Value Unit

LQFP64 10 × 10 mm 65
Thermal resistance
ΘJA LQFP48 7 × 7 mm 75 °C/W
junction-ambient
LQFP32 7 × 7 mm 76

6.4.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (still air). Available from www.jedec.org.

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STM32G070CB/KB/RB Ordering information

7 Ordering information

Example STM32 G 070 K B T 6 xyy

Device family
STM32 = Arm® based 32-bit microcontroller

Product type
G = general-purpose

Device subfamily
070 = STM32G070

Pin count
K = 32
C = 48
R = 64

Flash memory size

B = 128 Kbytes

Package type
T = LQFP

Temperature range
6 = -40 to 85°C (105°C junction)

Options
˽TR = tape and reel packing
˽˽˽ = tray packing
other = 3-character ID incl. custom Flash code and packing information

For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, please contact your nearest ST sales office.

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Revision history STM32G070CB/KB/RB

8 Revision history

Table 69. Document revision history

Date Revision Changes

28-Nov-2018 1 Initial release.

Cover page updated;
Section 2: Description updated;
Section 3.7.1: Power supply schemes: corrected
minimum VDD and VDDA values;
Section 3.14.1: Temperature sensor: “engineering
bytes” replaced “System memory”;
Section 3.17: Inter-integrated circuit interface (I2C):
SMBus and PMBus feature points;
Section 3.18: Universal synchronous/asynchronous
receiver transmitter (USART): max. speed corrected;
Table 11: Note 3 inserted and note 4 modified;
Table 17 updated;
11-Mar-2020 2 Table 18: Note 2 removed;
Table 20: Redefined VIN;
Table 27 Typical current consumption in Run and Low-
power run modes removed;
depending on code executed
Table 45: LU class modified from “II” to “II Level A”;
Table 48: I/O current condition for relaxed VOL/VOH
corrected from 18 mA to 15 mA; section Output driving
current corrected accordingly;
Table 52: major update;
Section 3.12: DMA request multiplexer (DMAMUX)
added;
Figures with package marking examples corrected.

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IMPORTANT NOTICE – PLEASE READ CAREFULLY

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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved

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