EC734 MWE PPT Unit 2 Module 1
EC734 MWE PPT Unit 2 Module 1
EC734 MWE PPT Unit 2 Module 1
This course aims at imparting knowledge about the passive and active
microwave components and devices used in microwave engineering
Unit 2, Solid state microwave devices
Topics covered
• Module 1: Introduction to microwave solid state devices- Diodes, BJTs and
FETs, materials used, applications in low power and miniaturized systems
• Module2: BJT, configurations, Principle of operation, I-V characteristics, voltage-
frequency, current-frequency and power-frequency limitations
• Module 3: JFET – Physical Structure, Principles of Operation, Pinch-off voltage
• Module 4: MESFET – Physical Structure, Principles of Operation, Pinch-off voltage
• Module 5: Introduction, Gunn-effect diodes – GaAs Diodes,
• Module 6: RWH Theory, Modes of Operation, LSA Diodes
• Module 7: ATTD Introduction, READ Diode, IMPATT Diode, TRAPATT Diode, BARITT
Diode
• Module 8: Introduction to parametric amplifiers - varactor diode, characteristics,
advantages and applications
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• In semiconductors, free electrons can be liberated from valance band so as to reach the
conduction band using external forces.
• Normally a very few number of free elections are existing in the conduction band.
• This won’t be sufficient for the conduction of current for an application.
• Hence these free electrons can be created either by increasing the temperature of the
material or by applying external electric field so as to liberate electrons.
• For making active electronic devices such as transistors, these semiconductors can be as
main materials.
• They should be doped properly by impurities so that the desired performance can be
achieved.
Excellence and Service
CHRIST
Deemed to be University
Which semiconductor materials are used
for making diodes & transistors?
• Normally semiconductors Silicon and Germanium are used (IV group materials in the
periodic table)
• Advancements in new materials research resulted in compound semiconductors such as
GaAs, InP, InGaN (picked from III & V group in the periodic table)
• In microwave applications Si, GaAs, GaN, InP are the most preferred materials rather than
other semiconductors because of their superior performance.
• They provide high electron bulk mobility and high electron drift velocity which are required in
microwave circuit operations.
Excellence and Service
CHRIST
Deemed to be University
MICs-types:
● Hybrid MICs – they are flexible and cost effective for circuit
implementation, first developed in 1960s.
Thick-film hybrid MICs-have one layer of metallization for conductors and
transmission lines; all discrete components and active devices are bonded to the
substrate
Thin-film hybrid MICs – some simpler components are deposited on the substrate
and the rest components are bonded through soldering
● MMIC (Monolithic microwave integrated circuits) – are a more recent
development.
Active & passive circuit elements are grown on the substrate.
The substrate is a semiconductor material, and several layers of metal, dielectric,
and resistive films are used.
Layout of MMIC
TRAPATT S-band pulsed transmitters for phased High peak and average power, reliable, low
array radar systems power supply, low cost
BARITT Local Oscillators in communications and Low cost, Low power Supply, reliable, Low
radar receivers noise
Topics covered:
Module 1: Introduction to microwave
solid state devices- Diodes, BJTs and
FETs, MICs, MMICs, materials
used, applications in low power and
miniaturized systems