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7 Breakdown Voltage Extraction PDF

This document provides an overview of an Athena/DevEdit/Atlas simulation that models breakdown voltage in an NMOS transistor. The simulation uses process simulation in Athena, parameter extraction, mesh refinement in DevEdit, and voltage ramping in Atlas with impact ionization models to determine the breakdown voltage. Key steps include tighter convergence tolerances in Atlas to model low pre-breakdown leakage, voltage ramping in small steps near breakdown, and a current-based extract to measure breakdown voltage.

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Bhaskar K
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238 views1 page

7 Breakdown Voltage Extraction PDF

This document provides an overview of an Athena/DevEdit/Atlas simulation that models breakdown voltage in an NMOS transistor. The simulation uses process simulation in Athena, parameter extraction, mesh refinement in DevEdit, and voltage ramping in Atlas with impact ionization models to determine the breakdown voltage. Key steps include tighter convergence tolerances in Atlas to model low pre-breakdown leakage, voltage ramping in small steps near breakdown, and a current-based extract to measure breakdown voltage.

Uploaded by

Bhaskar K
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Breakdown Voltage Extraction

Requires: SSuprem 4/DevEdit/S-Pisces


Minimum Versions: Athena 5.22.3.R, Atlas 5.28.1.R

This is an Athena/DevEdit/Atlas interface example simulating the breakdown voltage of an NMOS transistor.
This example demonstrates:

Process simulation of a MOS transistor in Athena


Process parameter extraction (eg. oxide thicknesses)
Autointerface between Athena and DevEdit
Remeshing using DevEdit
Autointerface between DevEdit and Atlas
Solution for a Vds ramp with Vgs=0.0V to get breakdown

The process simulation, process parameter extraction and electrode definition for this example are exactly as
described in the first example in this section.

The grid requirements for Atlas simulation of impact ionization effects are more stringent than for the low
electric field cases described earlier. DevEdit is used to remesh the Athena structure before proceeding to
Atlas. The remeshing commands are described in the previous example in this section.

The Atlas simulation contains similar syntax to the simpler examples described earlier in this section. The
models, contact and interface parameters are the same, except that the concentration dependent SRH model is
used. This provides a more accurate simulation of the pre-breakdown leakage current. The Selberherr impact
ionization model is also selected.

On the method statement, two parameters are chosen to restrict the use of the current convergence criteria
used in Atlas. Since the pre-breakdown leakage current is very low it is necessary to tighten the tolerances on
current convergence. The parameter setting method climit=1e-4 is also recommended in cases where the
mesh is not as tight as the one used here.

The sequence of SOLVE statements shows a ramp in drain voltage. Small steps are taken at first, but the main
simulation is done in 0.5V steps. A compliance limit of 5.0e-8A/um is set on the drain. Compliance limits are
useful in breakdown simulations to stop the simulation once the breakdown point is reached.

The value used here might seems rather low compared to typical values used in measurements. This is simply
an issue of CPU time. Running the simulation up into microamp or milliamp ranges is possible, however the
extra information gained is usually not worth the CPU time spent. No solutions will be possible once the
voltage exceeds the breakdown voltage. Atlas will cut the voltage step and try again. It does this four times
resulting in a minimum step of (0.5)^4 or 0.0625V. This is sufficient to resolve most breakdown voltages. It is
possible for users to ramp using smaller voltage steps, to use current boundary conditions or curve tracing to
further trace the IV curve to higher values of current. However, this is usually not needed. Much extra CPU
time might be required and yet the value of breakdown voltage remains the same to within the accuracy
expected by simulation. Examples demonstrating snapback and curve tracing are included in other sections.

The extract syntax used to measure the breakdown voltage is of the current search type. This is preferred over
the simple max(v."drain") syntax that could be used as it gives more consistent results.

To load and run this example, select the Load button in DeckBuild > Examples. This will copy the input file and
any support files to your current working directory. Select the Run button in DeckBuild to execute the example.

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