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NPN Epitaxial Silicon Transistor: Features

This document provides specifications for an NPN epitaxial silicon transistor in a TO-126 package. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 1000mW, and absolute maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. The document also lists typical electrical characteristics such as current gain, saturation voltages, transition frequency, and fall time.

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Mustapha Amine Jemni
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186 views1 page

NPN Epitaxial Silicon Transistor: Features

This document provides specifications for an NPN epitaxial silicon transistor in a TO-126 package. Key specifications include a collector-emitter voltage rating of 400V, collector dissipation of 1000mW, and absolute maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. The document also lists typical electrical characteristics such as current gain, saturation voltages, transition frequency, and fall time.

Uploaded by

Mustapha Amine Jemni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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13001

NPN Epitaxial Silicon Transistor

TO-126
Features

Collector-Emitter Voltage: VCEO= 400V


Collector Dissipation: PC(max)= 1000mW

Absolute Maximum Ratings (TA=25oC)


Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 600 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 200 mA
Collector Dissipation PC 1000 mW
o
Junction Temperature TJ 150 C 1. Emitter 2. Collector 3. Base
o
Storage Temperature TSTG -55~+150 C

Electrical Characteristics (TA=25oC)


Characteristic Symbol Test Conditions Min Max Unit
Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 600 V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 400 V
Emitter-Base Breakdown Voltage BVEBO IE=100µA, IC=0 7 V
Collector Cut-off Current ICBO VCB=600V, IE=0 100 μA
Collector Cut-off Current ICEO VCE=400V, IB=0 200 μA
Emitter Cut-off Current IEBO VEB=7V, IC=0 100 μA
DC Current Gain hFE(1) VCE=20V, IC=20mA 10 40
hFE(2) VCE=10V, IC=0.25mA 5
Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=10mA 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=10mA 1.2 V
Base-emitter Voltage VBE IE= 100mA 1.1 V
Transition Frequency ff VCE=20V, IC=20mA
f=1MHz 8 MHz
Fall Time tf IC=50mA, IB1=-1B2=5mA, 0.3 µS
Storage Time ts Vcc= 45V 1.5 µS

hFE(1) CLASSIFICATION
Classification
hFE(1) 10-15 15-20 20-25 25-30 30-35 35-40

Elite Enterprises (H.K.) Co., Ltd. Part No.: 13001


Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Page: 1
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Free Datasheet http://www.Datasheet4U.com

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