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    Unisonic Technologies Co., LTD: High Voltage Power Amplifier

    Uploaded by

    Bruce Lynde
    transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Unisonic Technologies Co., LTD: High Voltage Power Amplifier

    Uploaded by

    Bruce Lynde
    25 views3 pages
    transistor

    Original Title

    2SD1071

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views3 pages

    Unisonic Technologies Co., LTD: High Voltage Power Amplifier

    Uploaded by

    Bruce Lynde
    transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    UNISONIC TECHNOLOGIES CO.

    , LTD
    2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR

    HIGH VOLTAGE POWER


    AMPLIFIER

     DESCRIPTION
    The UTC 2SD1071 is a high voltage power amplifier, it uses UTC
    advanced technology to provide the customers high DC current gain
    and low saturation voltage, etc.
    The UTC 2SD1071 is suitable for general purpose power amplifier
    and Motor controls, etc.

     FEATURES
    * Low saturation voltage
    * High DC current gain

     EQUIVALENT CIRCUIT
    C
    Z-Di

    B Diode

    RBE1 RBE2

     ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    2SD1071L-TA3-T 2SD1071G-TA3-T TO-220 B C E Tube
    Note: Pin Assignment: E: Emitter C: Collector B: Base

     MARKING

    www.unisonic.com.tw 1 of 3
    Copyright © 2016 Unisonic Technologies Co., Ltd QW-R203-043.c
    2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR
     ABSOLUTE MAXIMUM RATINGS (TC=25°C)
    PARAMETER SYMBOL RATINGS UNIT
    Collector to Base Voltage VCBO 300 V
    Collector to Emitter Voltage VCEO 300 V
    Emitter to Base Voltage VEBO 6 V
    Collector Current IC 6 A
    Base Current IB 2.5 A
    Collector Dissipation PC 40 W
    Junction Temperature TJ +150 C
    Storage Temperature TSTG -40~+150 C
    Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
     THERMAL DATA
    PARAMETER SYMBOL RATINGS UNIT
    Junction to Case θJC 3 °C/W

     ELECTRICAL CHARACTERISTICS (TC =25°C)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    Collector to Base Voltage VCBO ICBO=1mA 300 V
    Collector to Emitter Voltage VCEO ICEO=1mA 300 V
    Emitter to Base Voltage VEBO IEBO=150mA 6 V
    Collector Cut-Off Current ICBO VCBO=250V 0.1 mA
    Emitter Cut-Off Current IEBO VEBO=6V 150 mA
    DC Current Gain hFE VCE=2V, IC=4A 500
    Collector-Emitter Saturation Voltage VCE(SAT) 1.5 V
    IC=4A, IB=15mA
    Base-Emitter Saturation Voltage VBE(SAT) 2.0 V

    UNISONIC TECHNOLOGIES CO., LTD 2 of 3


    www.unisonic.com.tw QW-R203-043.c
    2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD 3 of 3


    www.unisonic.com.tw QW-R203-043.c

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