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Bridge Diode

This document summarizes specifications for a series of high current glass passivated molding single-phase bridge rectifiers rated from 100V to 1000V reverse voltage and 1.0A forward current. Key features include a plastic package with UL 94V-0 flammability rating, high current capacity, glass passivated chip junctions, and superior thermal conductivity. Charts provide maximum ratings, typical reverse characteristics, forward voltage, surge current capability, and thermal resistance specifications.

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0% found this document useful (0 votes)
70 views3 pages

Bridge Diode

This document summarizes specifications for a series of high current glass passivated molding single-phase bridge rectifiers rated from 100V to 1000V reverse voltage and 1.0A forward current. Key features include a plastic package with UL 94V-0 flammability rating, high current capacity, glass passivated chip junctions, and superior thermal conductivity. Charts provide maximum ratings, typical reverse characteristics, forward voltage, surge current capability, and thermal resistance specifications.

Uploaded by

Ankit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DB102S Thru DB107S

High Current Glass Passivated Molding Single-Phase Bridge Rectifier

Reverse Voltage 100 to 1000V Forward Current 1.0 A

FEATURES
l Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
l High current capacity with small package
l Glass passivated chip junctions
l Superior thermal conductivity
l High IFSM

1. Maximum & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter Symbol Symbol DB102S DB103S DB104S DB105S DB106S DB107S Unit
Maximum repetitive voltage VRRM 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V
Maximum DC reverse current TA=25 ℃ 5
IR µA
at rated DC blocking voltage TA=125℃ 500
Average rectified forward current 60Hz Sine
Io 1.0 A
wave Resistance load with Ta=55℃
Peak forward surge current 8.3ms single half
IFSM 50 A
sine-wave superimposed on rated load
Max instantaneous forward voltage at 1.0A VF 1.05 V
Thermal Resistance
Between junction and ambient RθJ-A 134 ℃/W
Between junction and lead RθJ-L 20
Operating junction temperature TJ -55~150 ℃
Storage temperature Tstg -55~150 ℃

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DB102S Thru DB107S
2. Ratings and Characteristic Curves ( TA = 25°C unless otherwise noted )
Fig. 1 Derating Curve Fig.2 Typical Reverse Characteristics
Average Rectified Forward Current Io(A)

nstantaneous Reverse Current (µA)

Case Temperature Ta(℃) Percent of Rated Peak Reverse Voltage%

Fig.3 Forward Voltage Fig.4 Peak Surge Forward Capability


Peak Surge Forward Current IFSM(A)
Forward Current (A)

Forward Voltage VF Number of Cycles

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DB102S Thru DB107S
3. Marking Identification

Note:
生产日期码包含4位数字,例如 “1018”,前两个数字“10” 表示为2010年,另外二个数字
“18” 是指第18周,即表示该产品为2010年18周生产。

型号: DB 1 06 S
smt

bridge reverse voltage=600V


average rectified forward Current=1A

mean:DB series bridge

4. Dimension

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