3.155J/6.152J Lecture 20: Fluids Lab Testing: Prof. Martin A. Schmidt Massachusetts Institute of Technology 11/23/2005
3.155J/6.152J Lecture 20: Fluids Lab Testing: Prof. Martin A. Schmidt Massachusetts Institute of Technology 11/23/2005
11/23/2005
Outline
Unexposed
Si SU-8 (100 µm) Surface treatment &
casting PDMS
photolithography
PDMS
UV light
Si
mask
PDMS
development
Diffusion
U = velocity
L
w
No time dependence
d/dt = 0
Flow is constant in x-
direction (and 0 in z)
U = f(y)
Pressure is only a
function of x
A linear pressure drop
τw h
High P Low P
τw Ux
Umax
τw h
High P Low P
τw Ux
Umax
Figure by MIT OCW.
Maximum velocity
Flow rate
Average velocity
∆P = ρgH
H = height of water
g = gravity
Edge effects
Flow rate
Particle location in channel
Dimensions
Merging of channels
How to model
Diffusion
Dopant
n - epi Concentration
n+ - silicon
Initial Conditions
C
Initial Profile
Identical to Infinite
Diffused
Source Problem: Profile
x
0
‘pulses’ Refer to Plummer, J., M. Deal, and P. Griffin. Silicon VLSI Technology:
Fundamentals, Practice, and Modeling. Upper Saddle River, NJ: Prentice
Solution
Refer to Plummer, J., M. Deal, and P. Griffin. Silicon VLSI Technology: Fundamentals, Practice,
and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
Compare to calculated
Estimate errors
Extract an effective diffusion coefficient
Utilize ‘best estimate’ for flow velocity
Compare to expected (D ~ 2x10-6 cm2/s)
Identify relevant non-idealities