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Isc N-Channel MOSFET Transistor TK12A60D: Features

The document summarizes the specifications and characteristics of an N-channel MOSFET transistor from ISC with part number TK12A60D. It can handle high current loads up to 12A continuously and 48A in single pulses. It has a maximum drain-source voltage of 600V and is intended for use in power supply and switching applications. The document provides its maximum ratings, thermal characteristics, electrical characteristics, and notices regarding its intended use.

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Gustavo Granados
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25 views2 pages

Isc N-Channel MOSFET Transistor TK12A60D: Features

The document summarizes the specifications and characteristics of an N-channel MOSFET transistor from ISC with part number TK12A60D. It can handle high current loads up to 12A continuously and 48A in single pulses. It has a maximum drain-source voltage of 600V and is intended for use in power supply and switching applications. The document provides its maximum ratings, thermal characteristics, electrical characteristics, and notices regarding its intended use.

Uploaded by

Gustavo Granados
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc N-Channel MOSFET Transistor TK12A60D

·FEATURES
·With TO-220F packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·APPLICATIONS
·Power supply
·Switching applications

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 600 V

VGSS Gate-Source Voltage ±30 V

ID Drain Current-Continuous 12 A

IDM Drain Current-Single Pulsed 48 A

PD Total Dissipation 45 W

Tj Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 2.78 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor TK12A60D

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 600 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.0 4.0 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=6A 600 mΩ

IGSS Gate-Source Leakage Current VGS=±30V;VDS= 0V ±1 μA

IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V; 10 μA

VSDF Diode forward voltage ISD=12A, VGS = 0 V 1.7 V

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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