Global Mixed-mode Technology Inc.

G1431
2W Stereo Audio Amplifier
Features General Description
„ Internal Gain Control, Which Eliminates Exter- G1431 is a stereo audio power amplifier in 20pin
nal Gain-Setting Resistors TSSOP thermal pad package. It can drive 2.0W con-
„ Depop Circuitry Integrated tinuous RMS power into 4Ω load per channel in
„ Output Power at 1% THD+N, VDD=5V Bridge-Tied Load (BTL) mode at 5V supply voltage. Its
--2.0W/CH (typical) into a 4Ω Load THD is smaller than 1% under the above operation
--1.2W/CH (typical) into a 8Ω Load condition. To simplify the audio system design in the
„ Bridge-Tied Load (BTL) Supported notebook application and to enlarge the driving power,
„ Fully differential Input G1431 supports the Bridge-Tied Load (BTL) mode for
„ Shutdown Control Available driving the speakers. For the low current consumption
„ Surface-Mount Power Package applications, the SHDN mode is supported to disable
20-Pin TSSOP-P G1431 when it is idle. The current consumption can be
reduced to 150µA (typically).
Amplifier gain is internally configured and controlled by
Applications two terminals (GAIN0, GAIN1). BTL gain settings of
„ Stereo Power Amplifiers for Notebooks or 6dB, 10dB, 15.6dB, 21.6dB are provided.
Desktop Computers
„ Multimedia Monitors
„ Stereo Power Amplifiers for Portable Audio
Systems Ordering Information
ORDER TEMP. PACKAGE
MARKING
NUMBER RANGE (Pb free)
G1431F2U G1431 -40°C to +85°C TSSOP-20 (FD)

Pin Configuration

G1431
GND 1 20 GND
GAIN0 2 19 SHUTDOWN
GAIN1 3 18 ROUT+
LOUT+ 4 17 RIN-
LIN- 5 16 VDD Thermal
PVDD 6 15 PVDD Pad
RIN+ 7 14 ROUT-
LOUT- 8 13 GND
LIN+ 9 12 NC
BYPASS 10 11 GND

Top View Bottom View

TSSOP-20

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 Global Mixed-mode Technology Inc. G1431
Absolute Maximum Ratings
Supply Voltage, VCC…………………..…...…….……...6V Power Dissipation (1)
Operating Ambient Temperature Range TA ≤ 25°C ………...….…………………………..2.7W
TA…….…………………………….……….-40°C to +85°C TA ≤ 70°C ………...….…………………………..1.7W
Maximum Junction Temperature, TJ…..……….….150°C Electrostatic Discharge, VESD
Storage Temperature Range, TSTG….…-65°C to+150°C Human body mode.…………………….……….3000V(2)
Reflow Temperature (soldering, 10sec)…............260°C

Note:
(1)
: Recommended PCB Layout
(2)
: Human body model : C = 100pF, R = 1500Ω, 3 positive pulses plus 3 negative pulses

Electrical Characteristics
DC Electrical Characteristics, TA=+25°C

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT

Supply voltage VDD VDD 4.5 5 5.5 V
High-Level Input voltage, VIH VIH SHUTDOWN , GAIN0, GAIN1 2 --- --- V
Low-Level Input voltage, VIL VIL SHUTDOWN , GAIN0, GAIN1 --- --- 0.8 V
DC Differential Output Voltage VO(DIFF) VDD = 5V,Gain = 2 --- 5 50 mV
Supply Current in Mute Mode IDD VDD = 5V Stereo BTL --- 7.5 11 mA
IDD in Shutdown ISD VDD = 5V --- 160 300 µA

(AC Operation Characteristics, VDD = 5.0V, TA=+25°C, RL = 4Ω, unless otherwise noted)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT

THD = 1%, BTL, RL = 4Ω G=-2V/V --- 2 ---
THD = 1%, BTL, RL = 8Ω G=-2V/V --- 1.2 ---
Output power (each channel) see Note P(OUT) W
THD = 10%, BTL, RL = 4Ω G=-2V/V --- 2.5 ---
THD = 10%, BTL, RL = 8Ω G=-2V/V --- 1.6 ---
PO = 1.6W, BTL, RL = 4Ω G=-2V/V --- 100 ---
Total harmonic distortion plus noise THD+N m%
PO = 1W, BTL, RL = 8Ω G=-2V/V --- 60 ---
Maximum output power bandwidth BOM THD = 5% --- 15 --- kHz
Power supply ripple rejection PSRR F=1kHz, BTL mode G=-2V/V --- 68 --- dB
CBYP=1uF
Channel-to-channel output separation f = 1kHz --- 80 --- dB
Input impedance ZI See Table 2 MΩ
Signal-to-noise ratio PO = 500mW, BTL, G=-2V/V --- 90 --- dB
Output noise voltage Vn BTL,G=-2V/V, A Weighted filter --- 45 --- µV (rms)
Note :Output power is measured at the output terminals of the IC at 1kHz.

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 Global Mixed-mode Technology Inc. G1431
Typical Characteristics
Table of Graphs

FIGURE
vs Frequency 1,2,7,8,13,14
THD +N Total harmonic distortion plus noise
vs Output Power 3,4,5,6,9,10,11,12,15,16,17,18
Vn Output noise voltage vs Frequency 21
Supply ripple rejection ratio vs Frequency 19
Crosstalk vs Frequency 20
PO Output power vs Load Resistance 22
PD Power dissipation vs Output Power 23

Total Harmonic Distortion Total Harmonic Distortion

Plus Noise vs Frequency Plus Noise vs Frequency
10 10

5 VDD=5V 5 VDD=5V
RL=3Ω RL=3Ω
2 Po=1.75W Av=21.6dB 2 Av=6dB
1 1
Po=0.5W
0.5 Av=15.6dB 0.5

% %

0.2 0.2

Po=1W
0.1 0.1

0.05
Av=10dB 0.05
Av=6dB
0.02 0.02 Po=1.5W
0.01 0.01
20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k
Hz Hz

Figure 1 Figure 2

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10 10

5 VDD=5V 5
15kHz VDD=5V
RL=3Ω, Av=6dB RL=3Ω, Av=10dB
2 2

1 15kHz 1

0.5 0.5 1kHz

1kHz
% %

0.2 0.2

0.1 0.1

0.05 0.05 20Hz

20Hz
0.02 0.02

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 3 Figure 4

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 Global Mixed-mode Technology Inc. G1431
Typical Characteristics (continued)

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10 10

5
15kHz
5
15kHz

2 2

1 1
1kHz
0.5 1kHz 0.5

% %

0.2 0.2

0.1 0.1 20Hz

VDD=5V
0.05 VDD=5V 20Hz 0.05
RL=3Ω
RL=3Ω Av=21.6dB
0.02
Av=15.6dB 0.02

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 5 Figure 6

Total Harmonic Distortion Total Harmonic Distortion

Plus Noise vs Frequency Plus Noise vs Frequency
10 10

5
VDD=5V 5
VDD=5V
RL=4Ω Av=21.6dB
2 2
RL=4Ω
Po=1.75W Av=6dB
1 1

0.5 0.5 Po=0.25W

% %
Av=15.6dB
0.2 0.2

0.1 Av=6dB 0.1 Po=1.5W

0.05 0.05

0.02
Av=10dB 0.02
Po=1W
0.01 0.01
20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k
Hz Hz

Figure 7 Figure 8

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10 10

5 5 15kHz VDD=5V
15kHz VDD=5V RL=4Ω, Av=10dB
2 RL=4Ω, Av=6dB 2

1 1

0.5 0.5
1kHz
% 1kHz %

0.2 0.2

0.1 0.1

0.05 0.05
20Hz
20Hz
0.02 0.02

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 9 Figure 10

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 Global Mixed-mode Technology Inc. G1431
Typical Characteristics (continued)

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10
10

5 5 15kHz
15kHz
2 2

1 1

1kHz
0.5 0.5

% 1kHz %

0.2 0.2

0.1
0.1
VDD=5V 20Hz
VDD=5V 0.05
0.05
20Hz RL=4Ω
RL=4Ω
Av=21.6dB
0.02 Av=15.6dB 0.02

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 11 Figure 12

Total Harmonic Distortion Total Harmonic Distortion

Plus Noise vs Frequency Plus Noise vs Frequency
10 10

5 VDD=5V 5
VDD=5V
RL=8Ω
RL=8Ω
2 Av=6dB 2
Po=1W Av=15.6dB
1 1

0.5 0.5

% %

0.2 Po=0.25W 0.2

0.1 0.1
Av=21.6dB
Po=1W Av=6dB
0.05 0.05

0.02 Po=0.5W 0.02

Av=10dB
0.01 0.01
20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k
Hz Hz

Figure 13 Figure 14

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10 10

5
VDD=5V
5 VDD=5V
15kHz RL=8Ω RL=8Ω
2 2 15kHz Av=10dB
Av=6dB
1 1

0.5 0.5

% %

0.2 1kHz 0.2 1kHz

0.1 0.1

0.05 0.05

20Hz 20Hz
0.02 0.02

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 15 Figure 16

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 Global Mixed-mode Technology Inc. G1431
Typical Characteristics (continued)

Total Harmonic Distortion Plus Total Harmonic Distortion Plus

Noise vs Output Power Noise vs Output Power
10 10

VDD=5V
5
15kHz 5
15kHz
RL=8Ω
2 Av=15.6dB 2

1 1

0.5 0.5
1kHz
% % 1kHz
0.2 0.2

0.1 0.1

0.05 0.05
VDD=5V
20Hz RL=8Ω 20Hz
0.02 0.02 Av=21.6dB

0.01 0.01
3m 5m 10m 20m 50m 100m 200m 500m 1 2 3 3m 5m 10m 20m 50m 100m 200m 500m 1 2 3
W W

Figure 17 Figure 18

Supply Ripple Rejection Ratio

vs Frequency Channel Separation
-20
+0
T T T T T T T T
-25
-10 -30
VDD=5V -35
-20
RL=8Ω -40

-30
Cb=1µF -45

-50 VDD=5V
-40
-55 Po=1W
Av=21.6dB d
d
B
-50
B
-60 RL=8Ω
-60
-65
Av=6dB
-70
L TO R
-75
-70
-80
-80 Av=6dB -85

-90
-90 R TO L
-95

-100 -100
20 50 100 200 500 1k 2k 5k 10k 20k 20 50 100 200 500 1k 2k 5k 10k 20k
Hz Hz

Figure 19 Figure 20

Output Noise vs Frequency Output Power vs Load Resistance

500u 2.5
400u

300u
VDD=5V
RL=4Ω 2
200u

Av=6dB
Output Power(W)

A-Weighted filter
100u 1.5
VDD=5V
V 70u
60u THD+N=1%
50u
1 Each Channel
40u

30u

20u 0.5

10u
20 50 100 200 500 1k 2k 5k 10k 20k
0
Hz
0 10 20 30 40
Load Resistance(Ω)
Figure 21 Figure 22

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 Global Mixed-mode Technology Inc. G1431
Typical Characteristics (continued)

Power Dissipation vs Output Power Recommend PCB Footprint

1.8

1.6
RL=3Ω
1.4
Power Dissipation

1.2

1 RL=4Ω
0.8
VDD=5V
0.6 Each Channel
0.4
RL=8Ω
0.2

0
0 0.5 1 1.5 2 2.5
Po-Output Power(W)

Figure 23 Figure 24

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 Global Mixed-mode Technology Inc. G1431
Pin Description
PIN NAME I/O FUNCTION
1,11,13,20 GND/HS Ground connection for circuitry, directly connected to thermal pad.
2 GAIN0 I Bit 0 of gain control
3 GAIN1 I Bit 1 of gain control
4 LOUT+ O Left channel + output in BTL mode
5 LIN- I Negative left input for fully differential inputs.
6,15 PVDD Power supply for output stages.
7 RIN+ I Positive right input for fully differential inputs. AC ground for single-ended inputs.
8 LOUT- O Left channel - output in BTL mode
9 LIN+ I Positive left input for fully differential inputs. AC ground for single-ended inputs.
10 BYPASS Tap to voltage divider for internal mid-supply bias generator.
12 NC NC
14 ROUT- O Right channel - output in BTL mode
16 VDD Analog VDD input supply. This terminal needs to be isolated from PVDD to achieve
highest performance.
17 RIN- I Negative right input for fully differential inputs.
18 ROUT+ O Right channel + output in BTL mode
19 SHUTDOWN I Places entire IC in shutdown mode when held low

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 Global Mixed-mode Technology Inc. G1431
Application Circuit

1 20
GND GND

2 19 TO SYSTEM
GAIN0 SHUTDOWN
CONTROL

3 18
GAIN1 ROUT+

17 CRIN-
4 RIGHT LINE
LOUT+ RIN-
INPUT SIGNAL
C3
CLIN- VDD 1µF R
LEFT LINE 5 16
LIN- VDD
INPUT SIGNAL
L C1 CS1 CS2
VDD
1µF 6 15 SPEAKER
PVDD PVDD 1µF 10µF
SPEAKER
CRIN+
7 14
RIN+ ROUT-
C4
1µF 8 13
LOUT- GND

CLIN+
9 12
LIN+ NC
C2
1µF Cb
10 11
BYPASS GND
C5
1µF

Typical G1431 Application Circuit Using Single-Ended Inputs

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 Global Mixed-mode Technology Inc. G1431
Application Circuit (continued)

1 20
GND GND

2 19 TO SYSTEM
GAIN0 SHUTDOWN
CONTROL

3 18
GAIN1 ROUT+
RIGHT
17 CRIN-
4 NEGATIVE
LOUT+ RIN- DIFFERENTIAL
LEFT C3 INPUT SIGNAL
NEGATIVE CLIN- VDD 1µF R
5 16
DIFFERENTIAL LIN- VDD
L INPUT SIGNAL C1 CS1 CS2
VDD
1µF 6 15 SPEAKER
PVDD PVDD 1µF 10µF
SPEAKER RIGHT
POSITIVE CRIN+
7 14
DIFFERENTIAL RIN+ ROUT-
INPUT SIGNAL C4
1µF 8 13
LOUT- GND

CLIN+
LEFT 9 12
POSITIVE LIN+ NC
DIFFERENTIAL C2
Cb
INPUT SIGNAL 1µF 10 11
BYPASS GND
C5
1µF

Typical G1431 Application Circuit Using Differential Inputs

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 Global Mixed-mode Technology Inc. G1431
Application Information
Gain setting via GAIN0 and GAIN1 inputs Table 2
The internal gain setting is determined by two input Zi (kΩ) AV (dB)
terminals, GAIN0 and GAIN1. The gains listed in Table 30 21.6
1 are realized by changing the taps on the input resis-
45 15.6
tors inside the amplifier. This will cause the internal
70 10
input impedance, ZI, to be dependent on the gain set-
ting. Although the real input impedance will shift by 90 6
30% due to process variation from part-to-part, the
actual gain settings are controlled by the ratios of the Input Capacitor
resistors and the actual gain distribution from part-to- In the typical application, an input capacitor Ci is re-
part is quite good. quired to allow the amplifier to bias the input signal to
the proper dc level for optimum operation. In this case,
Table 1 Ci and the input impedance of the amplifier, Zi, form a
high-pass filter with the –3dB determined by the equa-
GAIN0 GAIN1 AV (dB)
tion: f-3dB= 1/ 2πRI Ci
0 0 6
0 1 10 The value of Ci is important to consider as it directly
1 0 15.6 affects the bass performance of the application circuit.
1 1 21.6
For example, if the input resistor is 15kΩ, the input
capacitor is 1µF, the flat bass response will be down to
10.6Hz.
Input Resistance
The typical input impedance at each gain setting is Because the small leakage current of the input ca-
given in the Table 2. Each gain setting is achieved by pacitors will cause the dc offset voltage at the input to
varying the input resistance of the amplifier, which can the amplifier that reduces the operation headroom,
be over 6 times from its minimum value to the maxi- especially at the high gain applications. The low-
mum value. As a result, if a single capacitor is used in leakage tantalum or ceramic capacitors are suggested
the input high pass filter, the –3dB or cut-off frequency to be used as the input coupling capacitors. When
will be also change over 3.5 times. To reduce the using the polarized capacitors, it is important to let the
variation of the cut-off frequency, an additional resistor positive side connecting to the higher dc level of the
can be connected from the input pin of the amplifier to application.
the ground, as shown in the figure below. With the
extra resistor, the cut-off frequency can be Power Supply Decoupling
re-calculated using equation : f-3dB= 1/ 2πC(R||RI). The G1431 is a high-performance CMOS audio ampli-
Using small external R can reduce the variation of the fier that requires adequate power supply decoupling to
cut-off frequency. But the side effect is small external make sure the output total harmonic distortion (THD)
R will also let (R||RI) become small, the cut-off fre- as low as possible. The optimum decoupling is using
quency will be larger and degraded the bass-band two capacitors with different types that target different
performance. The other side effect is with extra power types of noise on the power supply leads. For high
dissipation through the external resistor R to the frequency transients, spikes, a good low ESR ceramic
ground. So using the external resistor R to flatting the capacitor works best, typically 0.1µF/1µF used and
variation of the cut-off frequency, the user must also placed as close as possible to the G1431 VDD lead. A
consider the bass-band performance and the extra larger aluminum electrolytic capacitor of 10µF or
power dissipation to choose the accepted external greater placed near the device power is recommended
resistor R value. for filtering low-frequency noise.

Optimizing DEPOP Operation

Circuitry has been implemented in G1431 to minimize
the amount of popping heard at power-up and when
C Zi Zf coming out of shutdown mode. Popping occurs when-
Input Signal ever a voltage step is applied to the speaker and
IN
making the differential voltage generated at the two
R ends of the speaker. To avoid the popping heard, the
bypass capacitor should be chosen promptly,
1/(CBx170kΩ) ≦ 1/(CI*(RI+RF)). Where 170kΩ is the
output impedance of the mid-rail generator, CB is the
mid-rail bypass capacitor, CI is the input coupling ca-
pacitor, RI is the input impedance, RF is the gain set-
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 Global Mixed-mode Technology Inc. G1431
ting impedance which is on the feedback path. CB is voltage VO(PP) on the load will be two times than a
the most important capacitor. Besides it is used to re- ground reference configuration. The voltage on the
duce the popping, CB can also determine the rate at load is doubled, this will also yield 4 times output
which the amplifier starts up during startup or recovery power on the load at the same power supply rail and
from shutdown mode. loading. Another benefit of using differential driving
configuration is that BTL operation cancels the dc off-
De-popping circuitry of G1431 is shown as below Fig-
sets, which eliminates the dc coupling capacitor that is
ure 1. The PNP transistor limits the voltage drop
needed to cancelled dc offsets in the ground reference
across the 120kΩ by slewing the internal node slowly
configuration. Low-frequency performance is then lim-
when power is applied. At start-up, the voltage at
ited only by the input network and speaker responses.
BYPASS capacitor is 0. The PNP is ON to pull the
Cost and PCB space can be minimized by eliminating
mid-point of the bias circuit down. So the capacitor
the dc coupling capacitors.
sees a lower effective voltage, and thus the charging
is slower. This appears as a linear ramp (while the
VDD
PNP transistor is conducting), followed by the ex-
pected exponential ramp of an R-C circuit.
For better performance, CB is recommended to be at
least 1.5 times of input coupling capacitor CI. For ex- Vo(PP)
ample, if using 1µF input coupling capacitor, 2.2µF
ceramic or tantalum low-ESR capacitors are recom- RL 2xVo(PP)
VDD
mended to achieve the better THD performance.
-Vo(PP)
VDD

100 kΩ
120 kΩ
Bypass Figure 2

100 kΩ
Shutdown mode
When the normal operation, the SHUTDOWN pin
should be held high. Pulling SHUTDOWN low will
mute the outputs and deactivate the most of the cir-
cuits. At this moment, the current of this device will be
Figure 1 reduced to about 160µA to save the battery energy.
The SHUTDOWN pin should never be left uncon-
Bridged-Tied Load Mode Operation nected during the normal applications.
G1431 has two linear amplifiers to drive both ends of
the speaker load in Bridged-Tied Load (BTL) mode INPUT * AMPLIFIER STATE
operation. Figure 2 shows the BTL configuration. The SHUTDOWN OUTPUT
differential driving to the speaker load means that Low Mute
when one side is slewing up, the other side is slewing High BTL
down, and vice versa. This configuration in effect will * Inputs should never be left unconnected
double the voltage swing on the load as compared to a X= do not care
ground reference load. In BTL mode, the peak-to-peak

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 Global Mixed-mode Technology Inc. G1431
Package Information
C
D

D1

E2 E1 E

θ
0.127 TYP

A2 A
A1
e
0.05
b

TSSOP-20 (FD) Package

Note:
1. JEDCE outline: MP-153 AC/MO-153 ACT (thermally enhanced variations only)
2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall
not exceed 0.15 per side.
3. Dimension “E1” does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed
0.25 per side.
4. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm total in ex-
cess of the “b” dimension at maximum material conditions. Dambar cannot be located on the lower radius of
the foot. Minimum space between protrusion and adjacent lead is 0.07mm.
5. Dimensions “D” and “E1” to be determined at datum plane “H”.

DIMENSION IN MM DIMENSION IN INCH

SYMBOLS
MIN NOM MAX MIN NOM MAX
A ----- ----- 1.20 ----- ----- 0.047
A1 0.00 ----- 0.15 0.000 ----- 0.006
A2 0.80 1.00 1.05 0.031 0.039 0.041
b 0.19 ----- 0.30 0.007 ----- 0.012
C 0.20 ----- ----- 0.008 ----- -----
D 6.40 6.50 6.60 0.252 0.256 0.260
D1 3.90 ----- 4.40 0.154 ----- 0.173
E 6.40 BSC 0.252 BSC
E1 4.30 4.40 4.50 0.169 0.173 0.177
E2 2.70 ----- 3.20 0.106 ----- 0.126
e 0.65 BSC 0.026 BSC
L 0.45 0.60 0.75 0.018 0.024 0.030
θ 0º ----- 8º 0º ----- 8º

Taping Specification

PACKAGE Q’TY/ REEL

TSSOP-20 (FD) 2,500 ea

F e e d D ir e c tio n
T y p ic a l T S S O P P a c k a g e O r ie n ta tio n

GMT Inc. does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and GMT Inc. reserves the right at any time without notice to change said circuitry and specifications.

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