Transistor

2SD1450
Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm
4.0±0.2

3.0±0.2
■ Features
● Optimum for high-density mounting.
● Allowing supply with the radial taping.

15.6±0.5
● Low collector to emitter saturation voltage VCE(sat).

■ Absolute Maximum Ratings

+0.2
0.45–0.1
marking
(Ta=25˚C)

0.7±0.1

2.0±0.2
1 2 3
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 25 V
Collector to emitter voltage VCEO 20 V 1.27 1.27

Emitter to base voltage VEBO 12 V 2.54±0.15

Peak collector current ICP 1 A

Collector current IC 0.5 A 1:Emitter
2:Collector EIAJ:SC–72
Collector power dissipation (Ta=25˚C) PC 300 mW 3:Base New S Type Package
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA
Collector to base voltage VCBO IC = 10µA, IE = 0 25 V
Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V
Emitter to base voltage VEBO IE = 10µA, IC = 0 12 V
hFE1*1 VCE = 2V, IC = 0.5A*2 200 800
Forward current transfer ratio
hFE2 VCE = 2V, IC = 1A*2 60
Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 20mA*2 0.13 0.4 V
Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 20mA*2 1.2 V
Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 pF
ON resistanse Ron*3 0.6 Ω
*2 Pulse measurement
*1h Rank classification *3R
FE1 on Measurement circuit
1kΩ
Rank R S T IB=1mA

hFE1 200 ~ 350 300 ~ 500 400 ~ 800 f=1kHz

V=0.3V
VB VA
VV

VB
Ron= ✕1000(Ω)
VA–VB

1
Transistor 2SD1450

PC — Ta IC — VCE VBE(sat) — IC
500 2.4 100
IC/IB=10

Base to emitter saturation voltage VBE(sat) (V)

Ta=25˚C
Collector power dissipation PC (mW)

30
2.0
400

Collector current IC (A)

10

1.6
300 IB=4.0mA 3
25˚C
3.5mA Ta=–25˚C
1.2 1
3.0mA
2.5mA 75˚C
200 2.0mA 0.3
0.8
1.5mA
0.1
100 1.0mA
0.4
0.5mA 0.03

0 0 0.01
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.03 0.1 0.3 1 3 10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

VCE(sat) — IC hFE — IC fT — I E
100 1200 400
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=25 VCE=2V VCB=10V

Ta=25˚C
350
Forward current transfer ratio hFE

30

Transition frequency fT (MHz)

1000

10 300

800
3 250
Ta=75˚C
1 600 25˚C 200

0.3 Ta=75˚C –25˚C 150

400
25˚C
0.1 –25˚C 100

200
0.03 50

0.01 0 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob — VCB NV — IC
20 120
IE=0 VCE=10V
Collector output capacitance Cob (pF)

f=1MHz GV=80dB
Ta=25˚C Function=FLAT
100
16
Noise voltage NV (mV)

80
Rg=100kΩ
12

60

8 22kΩ
40
5kΩ

4
20

0 0
1 3 10 30 100 0.01 0.03 0.1 0.3 1
Collector to base voltage VCB (V) Collector current IC (mA)