Transient Voltage Suppression Diodes: Echnical Rticle
Transient Voltage Suppression Diodes: Echnical Rticle
1001
Silicon TVS diodes contain a P/N junction similar to a Zener diode but with a larg- Deciphering TVS Electrical Characteristics
er cross section, which is proportional to its surge power rating. These diodes
are clamping devices that limit voltage spikes by the low impedance avalanche • Stand-Off Voltage (VWM) - the maximum continuous dc or peak voltage which
breakdown of the P/N junction. may be applied over the standard operating temperature range. VWM is
normally 10% below the breakdown voltage (VBR).
The V-I curve shown in Figure 1 is similar to that of a Zener diode. TVS diodes are • Breakdown Voltage (VBR) - the voltage measured across the device at a speci-
designed and characterized for transient voltage suppression, while Zener diodes fied pulsed dc current (IT or IBR) on the V/I characteristic curve at or near to
are designed and specified for voltage regulation. where the breakdown (avalanche) occurs. Also known as the voltage across
the device in the breakdown region prior to the switching point at a speci-
fied breakdown current (IBR).
CURRENT I • Leakage Current (ID) - the maximum current that flows through the device at
the rated stand-off voltage (VWM) for a specified temperature. Also known
IFPP as Reverse Leakage Current (IR).
P-N
+ - • Capacitance (C) - this parameter is associated with high data rate applications
and is measured at specific frequency and bias. High capacitance degrades
signals.
IF • Forward Voltage (VF) - the voltage across the device in the forward conducting
Vc BV VR state at a specified current IF.
VOLTAGE V • Clamping Voltage (VC) - The peak voltage measured across the device during
IR VF the application of a pulse current (IPP) for a specified waveform.
Note that Leakage Current and Capacitance should not effect the performance of
P-N a circuit.
- +
Longer duration pulses can be suppressed by the TVS diode by increasing the die Suppressors limit voltage spikes to tolerable levels by either clamping or crowbar
size and head dissipation. Both voltage and power capability can be increased by action. A suppressor that clamps, begins conducting when its threshold voltage
stacking parts in series or parallel. is exceeded, then restores to a non-conducting state when the voltage drops be-
low the threshold. Voltage spikes are clipped off to safe level through clamping.
A transient is clamped instantaneously and diverts the damaging current away Transient Voltage Suppressors are examples of clamping devices.
from the protected device. Figure 2 shows a transient current being diverted to
ground. There are two major categories of clamping device:
a) those that attenuate transients, thus preventing their propagation into a sensi-
tive circuit - Standard TVS Arrays as shown in Figure 6.
8kV Positive and Negative Transient
1 1
VIN VOUT
I1
I2
b) those that divert transient away from sensitive loads, so limiting the residual 120
voltages - Steering Diode Arrays as shown in Figure 7.
TEST
tf Peak Value IPP WAVEFORM
100
60
40
td = t/(IPP/2)
1 2 3 4 20
TIP
10K
To Protected
Equipment
PPP - Peak Pulse Power - Watts
1K
400W, 8/20µs Waveform
100
RING 10
0.1 1 10 100 1K 10K
RRing td - Pulse Duration - µs
Figure 8. Metallic and Longitudinal Protection - Thyristor (PP-SM Series) Figure 5. Peak Pulse Power vs Pulse Time
A 3µs surge will have a peak pulse power of approximately 1kW. When the surge
pulse is increased, as in the 10/1000µs curve, the peak pulse power will decrease
Three equal TSS devices are used in this application for metallic (tip-to-ring) and to 60 Watts.
longitudinal (tip-to-ground and ring-to-ground) protection.
Package Configurations
Waveform Characterizations
TVS diodes are available in a va-
Most TVS diodes, which are used in low power protection applications are riety of sizes from large modules
specified according to an 8/20µs waveform as shown in Figure 4. Higher power to minature surface mount-
applications are measured with the 10/1000µs surge waveform. able flip chips. These devices
protect single to multiple line
applications in unidirectional or
bidirectional configurations.
company information
COMPANY PROFILE
ProTek Devices, based in Tempe, Arizona USA, is a manufacturer of Transient Voltage Suppression (TVS) products designed specifically for
the protection of electronic systems from the effects of lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), in-
ductive switching and EMI/RFI. With over 25 years of engineering and manufacturing experience, ProTek designs TVS devices that provide
application specific protection solutions for all electronic equipment/systems.
ProTek Devices Analog Products Division, also manufactures analog interface, control, RF and power management products.
CONTACT US
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