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Transient Voltage Suppression Diodes: Echnical Rticle

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0% found this document useful (0 votes)
137 views3 pages

Transient Voltage Suppression Diodes: Echnical Rticle

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Copyright
© © All Rights Reserved
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Technical Article

1001

Only One Name Means ProTek’Tion™

Transient Voltage Suppression Diodes


By: Ivan G. Lawson

Silicon TVS diodes contain a P/N junction similar to a Zener diode but with a larg- Deciphering TVS Electrical Characteristics
er cross section, which is proportional to its surge power rating. These diodes
are clamping devices that limit voltage spikes by the low impedance avalanche • Stand-Off Voltage (VWM) - the maximum continuous dc or peak voltage which
breakdown of the P/N junction. may be applied over the standard operating temperature range. VWM is
normally 10% below the breakdown voltage (VBR).
The V-I curve shown in Figure 1 is similar to that of a Zener diode. TVS diodes are • Breakdown Voltage (VBR) - the voltage measured across the device at a speci-
designed and characterized for transient voltage suppression, while Zener diodes fied pulsed dc current (IT or IBR) on the V/I characteristic curve at or near to
are designed and specified for voltage regulation. where the breakdown (avalanche) occurs. Also known as the voltage across
the device in the breakdown region prior to the switching point at a speci-
fied breakdown current (IBR).
CURRENT I • Leakage Current (ID) - the maximum current that flows through the device at
the rated stand-off voltage (VWM) for a specified temperature. Also known
IFPP as Reverse Leakage Current (IR).
P-N
+ - • Capacitance (C) - this parameter is associated with high data rate applications
and is measured at specific frequency and bias. High capacitance degrades
signals.
IF • Forward Voltage (VF) - the voltage across the device in the forward conducting
Vc BV VR state at a specified current IF.
VOLTAGE V • Clamping Voltage (VC) - The peak voltage measured across the device during
IR VF the application of a pulse current (IPP) for a specified waveform.

Note that Leakage Current and Capacitance should not effect the performance of
P-N a circuit.
- +

IPP Suppressor Types


Figure 1. Unidirectional V-I Curve
Clamping Devices

Longer duration pulses can be suppressed by the TVS diode by increasing the die Suppressors limit voltage spikes to tolerable levels by either clamping or crowbar
size and head dissipation. Both voltage and power capability can be increased by action. A suppressor that clamps, begins conducting when its threshold voltage
stacking parts in series or parallel. is exceeded, then restores to a non-conducting state when the voltage drops be-
low the threshold. Voltage spikes are clipped off to safe level through clamping.
A transient is clamped instantaneously and diverts the damaging current away Transient Voltage Suppressors are examples of clamping devices.
from the protected device. Figure 2 shows a transient current being diverted to
ground. There are two major categories of clamping device:
a) those that attenuate transients, thus preventing their propagation into a sensi-
tive circuit - Standard TVS Arrays as shown in Figure 6.
8kV Positive and Negative Transient

1 1
VIN VOUT

I1

I2

12V Positive and 0.6V Negative Clamped 2 2


Waveform for Unidirectional Device UNIDIRECTIONAL BIDIRECTIONAL
Figure 2. Unidirectional Device (Asymmetrical Clamping) Figure 6. TVS Diode Array - GBLC Series

1001.R1 4/11 Page 1 www.protekdevices.com


Technical Article
1001

Only One Name Means ProTek’Tion™

b) those that divert transient away from sensitive loads, so limiting the residual 120
voltages - Steering Diode Arrays as shown in Figure 7.
TEST
tf Peak Value IPP WAVEFORM
100

IPP - Peak Pulse Current - % of IPP


8 7 6 5 PARAMETERS
tf = 8µs
80 td = 20µs
e-t

60

40
td = t/(IPP/2)

1 2 3 4 20

Figure 7. Steering Diode Array - DALC112S1


0
0 5 10 15 20 25 30
t - Time - µs
Crowbar Devices Front Fall
Time Time
Crowbar devices conduct when threshold voltages are exceeded and then trig-
Figure 4. 8/20µs Pulse Waveshape
ger to an on-state voltage drop for only a few volts, hence the name “crowbar”.
These devices restore to a non-conducting state when the driving voltage and/or A TVS diode can have a peak pulse power rating (PPP) ranging from 30 kilowatts
current is reduced with the passing transient. Examples of crowbar devices are to as low as 25 Watts. The power rating is derived from the product of the peak
Gas Discharge Tubes (GDT) and Thyristors. Figure 8 shows metallic and longitudi- pulse current (IPP) and the clamping voltage (VC). Figure 5 shows a 400 Watt
nal protection using Thyristors (TSS). 8/20µs rated curve. As the surge pulse width decreases the peak pulse power
increases logarithmically. For shorter pulse widths, the TVS can handle higher
RTip peak pulse currents.

TIP
10K
To Protected
Equipment
PPP - Peak Pulse Power - Watts

1K
400W, 8/20µs Waveform

100

RING 10
0.1 1 10 100 1K 10K
RRing td - Pulse Duration - µs

Figure 8. Metallic and Longitudinal Protection - Thyristor (PP-SM Series) Figure 5. Peak Pulse Power vs Pulse Time

A 3µs surge will have a peak pulse power of approximately 1kW. When the surge
pulse is increased, as in the 10/1000µs curve, the peak pulse power will decrease
Three equal TSS devices are used in this application for metallic (tip-to-ring) and to 60 Watts.
longitudinal (tip-to-ground and ring-to-ground) protection.
Package Configurations
Waveform Characterizations
TVS diodes are available in a va-
Most TVS diodes, which are used in low power protection applications are riety of sizes from large modules
specified according to an 8/20µs waveform as shown in Figure 4. Higher power to minature surface mount-
applications are measured with the 10/1000µs surge waveform. able flip chips. These devices
protect single to multiple line
applications in unidirectional or
bidirectional configurations.

1001.R1 4/11 Page 2 www.protekdevices.com


Technical Article
1001

Only One Name Means ProTek’Tion™

company information
COMPANY PROFILE

ProTek Devices, based in Tempe, Arizona USA, is a manufacturer of Transient Voltage Suppression (TVS) products designed specifically for
the protection of electronic systems from the effects of lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), in-
ductive switching and EMI/RFI. With over 25 years of engineering and manufacturing experience, ProTek designs TVS devices that provide
application specific protection solutions for all electronic equipment/systems.

ProTek Devices Analog Products Division, also manufactures analog interface, control, RF and power management products.

CONTACT US

Corporate Headquarters
2929 South Fair Lane
Tempe, Arizona 85282
USA

By Telephone
General: 602-431-8101
Sales: 602-414-5109
Customer Service: 602-414-5114

By Fax
General: 602-431-2288

By E-mail:
Sales: [email protected]
Customer Service: [email protected]
Technical Support: [email protected]

Web
www.protekdevices.com
www.protekanalog.com

COPYRIGHT © ProTek Devices 2011 - This literature is subject to all applicable copyright laws and is not for resale in any manner.

SPECIFICATIONS: ProTek reserves the right to change the electrical and or mechanical characteristics described herein without notice.

DESIGN CHANGES: ProTek reserves the right to discontinue product lines without notice and that the final judgement concerning selection and specifications is the buyer’s and that in furnishing engineering
and technical assistance. ProTek assumes no responsibility with respect to the selection or specifications of such products. ProTek makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does ProTek assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability without limitation special,
consequential or incidental damages.

LIFE SUPPORT POLICY: ProTek Devices products are not authorized for use in life support systems without written consent from the factory.

1001.R1 4/11 Page 3 www.protekdevices.com

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