PRV: 50 - 1000 Volts Io: 3.0 Amperes: Silicon Rectifier Diodes DO - 201AD
PRV: 50 - 1000 Volts Io: 3.0 Amperes: Silicon Rectifier Diodes DO - 201AD
PRV: 50 - 1000 Volts Io: 3.0 Amperes: Silicon Rectifier Diodes DO - 201AD
1.00 (25.4)
MECHANICAL DATA : 0.052 (1.32) MIN.
0.048 (1.22)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end Dimensions in inches and ( millimeters )
* Mounting position : Any
* Weight : 0.929 grams
RATING SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current
IF 3.0 A
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on IFSM 200 A
rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps. VF 0.95 V
Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA
at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
Typical Junction Capacitance (Note1) CJ 28 pF
Typical Thermal Resistance (Note2) RθJA 15 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 01 : Mar 23, 2002
3.0 250
CURRENT, AMPERES
2.4 200
1.8 150
1.2 100
0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
100 100
50 TJ = 25 °C
FORWARD CURRENT, AMPERES
(pF)
10 10
5
Pulse Width = 300 µs
2% Duty Cycle
1.0 1
TJ = 25 °C 1 2 4 10 20 40 100
0.1
1.0
0.1
Ta = 25 °C
0.01
0 20 40 60 80 100 120 140