PRV: 50 - 1000 Volts Io: 3.0 Amperes: Silicon Rectifier Diodes DO - 201AD

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1N5400 - 1N5408 SILICON RECTIFIER DIODES

PRV : 50 - 1000 Volts DO - 201AD


Io : 3.0 Amperes
FEATURES :
1.00 (25.4)
* High current capability 0.21 (5.33)
MIN.
* High surge current capability 0.19 (4.83)
* High reliability
* Low reverse current 0.375 (9.53)
* Low forward voltage drop 0.285 (7.24)

1.00 (25.4)
MECHANICAL DATA : 0.052 (1.32) MIN.
0.048 (1.22)
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end Dimensions in inches and ( millimeters )
* Mounting position : Any
* Weight : 0.929 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RATING SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current
IF 3.0 A
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on IFSM 200 A
rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps. VF 0.95 V
Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA
at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
Typical Junction Capacitance (Note1) CJ 28 pF
Typical Thermal Resistance (Note2) RθJA 15 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C

Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 01 : Mar 23, 2002

This datasheet has been downloaded from http://www.digchip.com at this page


RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


RECTIFIED CURRENT FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT

3.0 250

PEAK FORWARD SURGE


CURRENT, AMPERES

CURRENT, AMPERES
2.4 200

1.8 150

1.2 100

0.6 50 8.3ms SINGLE HALF SINE-WAVE


(JEDEC) Method

0 0
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE


JUNCTION CAPACITANCE

100 100

50 TJ = 25 °C
FORWARD CURRENT, AMPERES

(pF)

10 10

5
Pulse Width = 300 µs
2% Duty Cycle
1.0 1
TJ = 25 °C 1 2 4 10 20 40 100

REVERSE VOLTAGE, VOLTS

0.1

FIG. 5 - TYPICAL REVERSE CHARACTERISTICS


0.01 10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Ta = 100 °C
FORWARD VOLTAGE, VOLTS
REVERSE CURRENT,
MICROAMPERES

1.0

0.1
Ta = 25 °C

0.01
0 20 40 60 80 100 120 140

PERCENT OF RATED REVERSE


VOLTAGE, (%)

Page 2 of 2 Rev. 01 : Mar 23, 2002

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